WO2009076788A1 - Wafer stack, integrated optical device and method for fabricating the same - Google Patents

Wafer stack, integrated optical device and method for fabricating the same Download PDF

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Publication number
WO2009076788A1
WO2009076788A1 PCT/CH2008/000532 CH2008000532W WO2009076788A1 WO 2009076788 A1 WO2009076788 A1 WO 2009076788A1 CH 2008000532 W CH2008000532 W CH 2008000532W WO 2009076788 A1 WO2009076788 A1 WO 2009076788A1
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WO
WIPO (PCT)
Prior art keywords
wafer
sunshade plate
integrated optical
wafer stack
functional elements
Prior art date
Application number
PCT/CH2008/000532
Other languages
French (fr)
Inventor
Markus Rossi
Hartmut Rudmann
Original Assignee
Heptagon Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagon Oy filed Critical Heptagon Oy
Priority to CN2008801270814A priority Critical patent/CN101971341B/en
Priority to US12/809,362 priority patent/US8289635B2/en
Priority to EP08863376A priority patent/EP2223338A1/en
Priority to JP2010538308A priority patent/JP2011507284A/en
Publication of WO2009076788A1 publication Critical patent/WO2009076788A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49826Assembling or joining

Definitions

  • the invention relates to an optical device for a camera module comprising a baffle that defines a predetermined field of view (FOV) of the image capturing device, while suppressing beam paths coming from points outside this FOV.
  • the invention further relates to a wafer scale package representing a plurality of such optical devices, to a baffle array with a plurality of baffles and to methods for manufacturing a plurality of camera modules and for manufacturing a baffle substrate.
  • the camera modules are integrated optical devices, which include functional elements such as the image capturing device and the at least one lens stacked together along the general direction of light propagation. These elements are arranged in a predetermined spatial relationship with respect to one another (integrated device) such that further alignment with each other is not needed, leaving only the integrated device as such to be aligned with other systems.
  • Wafer-scale replication of lens elements allows the fabrication of several hundreds of generally identical devices with a single step, e.g. a single or double-sided UV- embossing process.
  • Replication techniques include injection molding, roller hot embossing, flat-bed hot embossing, UV embossing.
  • the surface topology of a master structure is replicated into a thin film of a UV-curable replication material such as an UV curable epoxy resin on top of a substrate.
  • the replicated surface topology can be a refractive or a diffractive optically effective structure, or a combination of both.
  • a replication tool bearing a plurality of replication sections that are a negative copy of the optical structures to be manufactured is prepared, e.g. from a master.
  • the tool is then used to UV-emboss the epoxy resin.
  • the master can be a lithographically fabricated structure in fused silica or silicon, a laser or e-beam written structure, a diamond turned structure or any other type of structure.
  • the master may also be a submaster produced in a multi stage generation process by replication from a (super) master.
  • a substrate or wafer in the meaning used in this text is a disc or a rectangular plate or a plate of any other shape of any dimensionally stable, often transparent material.
  • the diameter of a wafer disk is typically between 5 cm and 40 cm, for example between 10 cm and 31 cm. Often it is cylindrical with a diameter of either 2, 4, 6, 8 or 12 inches, one inch being about 2.54 cm.
  • the wafer thickness is for example between 0.2 mm and 10 mm, typically between 0.4 mm and 6 mm.
  • the substrate is at least partially transparent. Otherwise, the substrate can be nontransparent as well.
  • at least one substrate bears electro-optical components, like the image capturing device, and may thus be a silicon or GaAs or other semiconductor based wafer; it may also be a CMOS wafer or a wafer carrying CCD arrays or an array of Position Sensitive Detectors.
  • Such integrated optical devices can be manufactured by stacking wafers along the axis corresponding to the direction of the smallest wafer dimension (axial direction).
  • the wafers comprise functional elements, like lens elements or image capturing elements, in a well defined spatial arrangement on the wafer.
  • a wafer stack comprising a plurality of generally identical integrated optical devices can be formed, wherein the elements of the optical device have a well defined spatial relationship with respect to one another and define a main optical axis of the device.
  • spacer means, e.g. a plurality of separated spacers or an interconnected spacer matrix as disclosed in US 2003/0010431 or WO 2004/027880, the wafers can be spaced from one another, and lens elements can also be arranged between the wafers on a wafer surface facing another wafer.
  • a sunshade or baffle is an element that defines a field of view (FOV) of the image capturing element by suppressing beam paths coming from points outside this FOV.
  • Known baffles consist of a layer of non-transparent material having a given thickness in axial direction and a through-hole for light transmission.
  • the through- hole generally defines a cone with a given extent in axial direction through which light can pass.
  • the thickness as well as the shape of the side walls of the through hole determines the FOV and the maximum angle (collection angle) under which incident light can pass the baffle and enter the camera module. It is often desired that the collection angle does not exceed a predetermined value.
  • baffles have thus a thickness of several 100 ⁇ m (e.g. 100-300 ⁇ m) and side walls of the through hole which are tapered with an angle of 25-35° with respect to the normal direction of the front wall such that an opening with a varying cross section having a diameter in the range of 1-3 mm is formed. This restricts the full angle of the field of view to about 50 to 70°. ⁇
  • baffles are normally made as separate parts. They are attached to the integrated camera module only after its complete manufacture, i.e. after the dicing step if a wafer scale manufacturing process is employed. The additional steps of attaching each individual baffle to each individual camera module associated therewith is time-consuming and complicated and thus another disadvantage of known modules and manufacturing processes.
  • a further disadvantage is that the optical system, or at least the top lens element or the iris layer, is fully accessible via the through hole. This may lead to damage and contamination.
  • the method for providing a sunshade plate is part of a method for fabricating an integrated optical device by creating a wafer stack by stacking at least a top wafer carrying as functional elements a plurality of lenses on at least one further wafer comprising further functional elements, and separating (dicing) the wafer stack into a plurality of integrated optical devices, wherein corresponding functional elements of the top and further wafer are aligned with each other and define a plurality of main optical axes.
  • the method for providing a sunshade plate method for providing a sunshade plate as part of an integrated optical device comprises the steps of
  • a sunshade plate comprising a plurality of through holes, the through holes being arranged to correspond to the arrangement of the functional elements on the top wafer; • stacking the sunshade plate on the top wafer, with the through holes being aligned with said main optical axes.
  • the optical device may comprise an imaging chip, making it an integrated camera module.
  • the method comprises the further step of stacking a transparent cover plate on the sunshade plate prior to cutting the wafer stack into individual optical devices.
  • the integrated camera module also comprises a protective cover, and the camera module may be installed in a consumer product such as a mobile phone without the need for a protective plate being mounted on the camera or being provided as part of the housing of the consumer product.
  • the step of stacking usually includes gluing or bonding the layers being stacked together, e.g. by means of an adhesive.
  • the wafer stack constitutes a wafer scale package.
  • a single integrated camera module is manufactured from a wafer stack or wafer package by separating (dicing or cutting) said wafer stack into a plurality of integrated camera modules.
  • Figure 1 an elevated view of a sunshade plate
  • FIGS. 4 and 5 lateral cut-away views of integrated camera modules.
  • Figure 1 schematically shows an elevated view of a sunshade plate.
  • the sunshade plate 1 is wafer-sized and comprises a plurality of through holes 6, typically arranged in a grid or array.
  • the through holes 6 extend from a top surface 11 to a bottom surface 12 of the sunshade plate 1 and preferably are conical in shape.
  • Figures 2 and 3 show lateral cut-away views of wafer stacks 8 with a sunshade plate 1.
  • a wafer stack 8 comprises, from top to bottom, a sunshade plate 1 stacked on a top wafer 2 carrying functional elements, for example, a first lens 9a and second lens 9b.
  • the top wafer 2 may carry only lenses on its top or only on its bottom surface.
  • the lenses may be fabricated on the top wafer 2 by means of a replication process, or may be shaped into the top wafer 2 itself.
  • the top wafer 2 is stacked on a further wafer 4 from which it may be separated by a spacer wafer 3.
  • the further wafer 4 carries, as further functional elements, imaging or camera chips 9c.
  • Each camera chip 9c is aligned with a corresponding lens or set of lenses 9a, 9b, thus forming, together with the surrounding structural elements 2, 3, 4 an integrated camera.
  • Each such integrated camera or integrated optical device defines a main optical axis 14.
  • Figure 3 shows a different embodiment from that of Figure 2, in that it additionally comprises a transparent cover plate 5 stacked on the sunshade plate 1.
  • Further embodiments may comprise further layers of e.g. lenses arranged between the top wafer 2 and the further wafer 4.
  • the through holes 6 in the sunshade plate 1 comprise side walls 7, typically conical shaped, which are tapered with an angle of 20-40°, preferably 25-35° with respect to the normal direction of the sunshade plate 1 or its top surface 1 1.
  • the exact angle is determined according to camera specifications and usually is about 2° more than the camera's field of view.
  • the side walls may be vertical or may be tapered in the other direction, i.e. opening up towards the bottom.
  • the side walls are not straight, but rounded or chamfered.
  • the thickness of the sunshade plate 1 is in the range of 0.1 to 0.5 or 1 millimeters, the width of the top opening of the through hole 6 being ca. 1 to 3 or 5 millimeters, and the width of the bottom opening being e.g. around 0.3 millimeters.
  • the sunshade plate 1 is preferably made of an optically intransparent material.
  • the manufacturing process for the sunshade plate 1 itself may be molding, stamping, or another replication process.
  • material preferably a plastic material such as a thermoplast or an epoxy, with or without filler material, is used.

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  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

An integrated optical device (10) and a method for fabricating an integrated optical device (10) by creating a wafer stack (8) by stacking at least a top wafer (2) carrying as functional elements a plurality of lenses (9a, 9b) on at least one further wafer (4) comprising further functional elements (9c), and separating the wafer stack (8) into a plurality of integrated optical devices (10), wherein corresponding functional elements of the top and further wafer (2, 4) are aligned with each other and define a plurality of main optical axes (14), providing a sunshade plate as part of an integrated optical device (10), comprising the steps of providing a sunshade plate (1) comprising a plurality of through holes (6), the through holes (6) being arranged to correspond to the arrangement of the functional elements on the top wafer (2); stacking the sunshade plate (1) on the top wafer (2), with the through holes (6) being aligned with said main optical axes (14).

Description

WAFER STACK, INTEGRATED OPTICAL DEVICE AND METHOD FOR FABRICATING THE SAME
FIELD OF THE INVENTION
The invention is in the field of integrated optical devices, in particular integrated camera modules with an image capturing element, such as a CCD sensor, and at least one lens element for imaging an object on the image capturing element, e.g. a refractive and/or diffractive lens. Integrated device means that all components are arranged in a well defined spatial relationship. Such integrated camera modules are, for example, cameras of mobile phones which are preferably manufactured in a mass production process at low cost.
More concretely, the invention relates to an optical device for a camera module comprising a baffle that defines a predetermined field of view (FOV) of the image capturing device, while suppressing beam paths coming from points outside this FOV. The invention further relates to a wafer scale package representing a plurality of such optical devices, to a baffle array with a plurality of baffles and to methods for manufacturing a plurality of camera modules and for manufacturing a baffle substrate.
BACKGROUND OF THE INVENTION
Especially in the field of mobile phones with cameras, but also for other applications, it is desirable to have a camera module that can be mass produced at low cost in an as simple process as possible and still has a good image quality. Such camera modules comprise an image capturing element and at least one lens element arranged along a common axis and are known from WO 2004/027880, for example. The known camera modules are manufactured on a wafer scale by replicating a plurality of lens elements on a disk-like substrate (wafer), stacking and connecting the substrates to form a wafer scale package (wafer stack) and dicing the stack in order to separate the individual camera modules from one another.
The camera modules are integrated optical devices, which include functional elements such as the image capturing device and the at least one lens stacked together along the general direction of light propagation. These elements are arranged in a predetermined spatial relationship with respect to one another (integrated device) such that further alignment with each other is not needed, leaving only the integrated device as such to be aligned with other systems.
Wafer-scale replication of lens elements allows the fabrication of several hundreds of generally identical devices with a single step, e.g. a single or double-sided UV- embossing process. Replication techniques include injection molding, roller hot embossing, flat-bed hot embossing, UV embossing. As an example, in the UV embossing process the surface topology of a master structure is replicated into a thin film of a UV-curable replication material such as an UV curable epoxy resin on top of a substrate. The replicated surface topology can be a refractive or a diffractive optically effective structure, or a combination of both. For replicating, a replication tool bearing a plurality of replication sections that are a negative copy of the optical structures to be manufactured is prepared, e.g. from a master. The tool is then used to UV-emboss the epoxy resin. The master can be a lithographically fabricated structure in fused silica or silicon, a laser or e-beam written structure, a diamond turned structure or any other type of structure. The master may also be a submaster produced in a multi stage generation process by replication from a (super) master. A substrate or wafer in the meaning used in this text is a disc or a rectangular plate or a plate of any other shape of any dimensionally stable, often transparent material. The diameter of a wafer disk is typically between 5 cm and 40 cm, for example between 10 cm and 31 cm. Often it is cylindrical with a diameter of either 2, 4, 6, 8 or 12 inches, one inch being about 2.54 cm. The wafer thickness is for example between 0.2 mm and 10 mm, typically between 0.4 mm and 6 mm.
If light needs to travel through the substrate, the substrate is at least partially transparent. Otherwise, the substrate can be nontransparent as well. In case of a camera module, at least one substrate bears electro-optical components, like the image capturing device, and may thus be a silicon or GaAs or other semiconductor based wafer; it may also be a CMOS wafer or a wafer carrying CCD arrays or an array of Position Sensitive Detectors.
Such integrated optical devices can be manufactured by stacking wafers along the axis corresponding to the direction of the smallest wafer dimension (axial direction). The wafers comprise functional elements, like lens elements or image capturing elements, in a well defined spatial arrangement on the wafer. By choosing this spatial arrangement in an adequate way, a wafer stack comprising a plurality of generally identical integrated optical devices can be formed, wherein the elements of the optical device have a well defined spatial relationship with respect to one another and define a main optical axis of the device.
By spacer means, e.g. a plurality of separated spacers or an interconnected spacer matrix as disclosed in US 2003/0010431 or WO 2004/027880, the wafers can be spaced from one another, and lens elements can also be arranged between the wafers on a wafer surface facing another wafer.
It is known to place a sunshade or baffle in front of the top lens element of a camera module. A sunshade or baffle is an element that defines a field of view (FOV) of the image capturing element by suppressing beam paths coming from points outside this FOV. Known baffles consist of a layer of non-transparent material having a given thickness in axial direction and a through-hole for light transmission. The through- hole generally defines a cone with a given extent in axial direction through which light can pass. The thickness as well as the shape of the side walls of the through hole determines the FOV and the maximum angle (collection angle) under which incident light can pass the baffle and enter the camera module. It is often desired that the collection angle does not exceed a predetermined value. This is because light entering the device under higher angles is stray light and/or may not directly fall onto the photosensitive part of the image capturing element but may hit the photosensitive part only after one or more reflections inside the camera module. This may lead to artifacts in the image generated by the image capturing element, and thus to a reduced image quality.
Known baffles have thus a thickness of several 100 μm (e.g. 100-300 μm) and side walls of the through hole which are tapered with an angle of 25-35° with respect to the normal direction of the front wall such that an opening with a varying cross section having a diameter in the range of 1-3 mm is formed. This restricts the full angle of the field of view to about 50 to 70°.
Known baffles are normally made as separate parts. They are attached to the integrated camera module only after its complete manufacture, i.e. after the dicing step if a wafer scale manufacturing process is employed. The additional steps of attaching each individual baffle to each individual camera module associated therewith is time-consuming and complicated and thus another disadvantage of known modules and manufacturing processes.
EP 1 434 426 discloses a wafer-scale manufacuring method for inegrated camera modules in which an intransparent iris film comprising holes is deposited as a top layer on a wafer from which later individual camera modules are diced. The iris material is made of a film such as an acrylic film or a poly olefin film, and is bonded to an underlying IR filter plate. Alternatively, the iris material may be formed by printing a light shielding material on a surface of the IR filter or on a lens body. Thus, being very thin, the iris film does not stop stray light from entering the camera at angles that are almost parallel to the plane of the iris film.
A further disadvantage is that the optical system, or at least the top lens element or the iris layer, is fully accessible via the through hole. This may lead to damage and contamination.
DESCRIPTION OF THE INVENTION
It is a further object of the invention to provide an integrated optical device that can be manufactured in a mass production process at low cost, and a corresponding manufacturing process.
It is a further object of the invention to provide a wafer scale package comprising a plurality of generally identical camera or optical device modules.
It is a further object of the invention to provide a sunshade plate with a plurality of sunshade elements and a corresponding manufacturing method.
These objects are achieved by a a method for providing a sunshade plate, a wafer stack, an integrated optical device and a sunshade plate according to the corresponding independent claims. Preferred embodiments are described in the dependent claims and the description and are shown in the drawings.
The method for providing a sunshade plate is part of a method for fabricating an integrated optical device by creating a wafer stack by stacking at least a top wafer carrying as functional elements a plurality of lenses on at least one further wafer comprising further functional elements, and separating (dicing) the wafer stack into a plurality of integrated optical devices, wherein corresponding functional elements of the top and further wafer are aligned with each other and define a plurality of main optical axes. The method for providing a sunshade plate method for providing a sunshade plate as part of an integrated optical device comprises the steps of
• providing a sunshade plate comprising a plurality of through holes, the through holes being arranged to correspond to the arrangement of the functional elements on the top wafer; • stacking the sunshade plate on the top wafer, with the through holes being aligned with said main optical axes.
This allows to provide, after dicing, a complete integrated optical device module which includes a sunshade. No further steps for adding a sunshade are required. The optical device may comprise an imaging chip, making it an integrated camera module.
In a preferred embodiment of the invention, the method comprises the further step of stacking a transparent cover plate on the sunshade plate prior to cutting the wafer stack into individual optical devices. As a result, the integrated camera module also comprises a protective cover, and the camera module may be installed in a consumer product such as a mobile phone without the need for a protective plate being mounted on the camera or being provided as part of the housing of the consumer product.
In the above, the step of stacking usually includes gluing or bonding the layers being stacked together, e.g. by means of an adhesive. The wafer stack constitutes a wafer scale package. A single integrated camera module is manufactured from a wafer stack or wafer package by separating (dicing or cutting) said wafer stack into a plurality of integrated camera modules.
Further preferred embodiments are evident from the dependent patent claims. Features of the method claims may be combined with features of the device claims and vice versa.
BRIEF DESCRIPTION OF THE DRAWINGS
The subject matter of the invention will be explained in more detail in the following text with reference to preferred exemplary embodiments which are illustrated in the attached drawings, which show schematically, in
Figure 1 an elevated view of a sunshade plate;
Figures 2 and 3 lateral cut-away views of wafer stacks with a sunshade plate; and
Figures 4 and 5 lateral cut-away views of integrated camera modules.
The reference symbols used in the drawings, and their meanings, are listed in summary form in the list of reference symbols. In principle, identical parts are provided with the same reference symbols in the figures.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
Figure 1 schematically shows an elevated view of a sunshade plate. The sunshade plate 1 is wafer-sized and comprises a plurality of through holes 6, typically arranged in a grid or array. The through holes 6 extend from a top surface 11 to a bottom surface 12 of the sunshade plate 1 and preferably are conical in shape. Figures 2 and 3 show lateral cut-away views of wafer stacks 8 with a sunshade plate 1. A wafer stack 8 comprises, from top to bottom, a sunshade plate 1 stacked on a top wafer 2 carrying functional elements, for example, a first lens 9a and second lens 9b. Alternatively, the top wafer 2 may carry only lenses on its top or only on its bottom surface. The lenses may be fabricated on the top wafer 2 by means of a replication process, or may be shaped into the top wafer 2 itself. The top wafer 2 is stacked on a further wafer 4 from which it may be separated by a spacer wafer 3. The further wafer 4 carries, as further functional elements, imaging or camera chips 9c. Each camera chip 9c is aligned with a corresponding lens or set of lenses 9a, 9b, thus forming, together with the surrounding structural elements 2, 3, 4 an integrated camera. Each such integrated camera or integrated optical device defines a main optical axis 14. Figure 3 shows a different embodiment from that of Figure 2, in that it additionally comprises a transparent cover plate 5 stacked on the sunshade plate 1. Further embodiments may comprise further layers of e.g. lenses arranged between the top wafer 2 and the further wafer 4.
Layers of adhesive that may lie between the various layers, and electrical connections to the camera chips 9c are not shown in the figures.
The through holes 6 in the sunshade plate 1 comprise side walls 7, typically conical shaped, which are tapered with an angle of 20-40°, preferably 25-35° with respect to the normal direction of the sunshade plate 1 or its top surface 1 1. The exact angle is determined according to camera specifications and usually is about 2° more than the camera's field of view. Alternatively, the side walls may be vertical or may be tapered in the other direction, i.e. opening up towards the bottom. In other embodiments of the invention, the side walls are not straight, but rounded or chamfered. The thickness of the sunshade plate 1 is in the range of 0.1 to 0.5 or 1 millimeters, the width of the top opening of the through hole 6 being ca. 1 to 3 or 5 millimeters, and the width of the bottom opening being e.g. around 0.3 millimeters.
The sunshade plate 1 is preferably made of an optically intransparent material. The manufacturing process for the sunshade plate 1 itself may be molding, stamping, or another replication process. As material, preferably a plastic material such as a thermoplast or an epoxy, with or without filler material, is used.
The method for manufacturing a wafer stack comprises the steps of stacking the wafers and spacers constituting the wafer stack, including the sunshade plate 1 and optionally the cover plate 5. The method for manufacturing an individual optical element comprises the further step of dicing the wafer stack 8, separating it into a plurality of integrated camera devices 10. Corresponding dicing lines 13 are shown in the Figures 2 and 3. Figures 4 and 5 show lateral cut-away views of integrated camera modules generated by this separating step.
While the invention has been described in present preferred embodiments of the invention, it is distinctly understood that the invention is not limited thereto, but may be otherwise variously embodied and practised within the scope of the claims.
LIST OF DESIGNATIONS
1 sunshade plate 9a first lens
2 top wafer 9b second lens
3 spacer wafer 9c camera chip
4 further wafer 10 integrated camera device
5 cover plate 1 1 top surface
6 through hole, aperture hole 12 bottom surface
7 side wall 13 dicing lines
8 wafer stack 14 optical axes

Claims

P A T E N T C L A I M S
1. In a method for fabricating an integrated optical device (10) by creating a wafer stack (8) by stacking at least a top wafer (2) carrying as functional elements a plurality of lenses (9a, 9b) on at least one further wafer (4) comprising further functional elements (9c), and separating the wafer stack (8) into a plurality of integrated optical devices (10), wherein corresponding functional elements of the top and further wafer (2, 4) are aligned with each other and define a plurality of main optical axes (14), each axis corresponding to one integrated optical device (10), a method for providing a sunshade plate as part of an integrated optical device (10), comprising the steps of
• providing a sunshade plate (1) comprising a plurality of through holes (6), the through holes (6) being arranged to correspond to the arrangement of the functional elements on the top wafer (2);
• stacking the sunshade plate (1) on the top wafer (2), with the through holes (6) being aligned with said main optical axes (14).
2. The method of claim 1, comprising the further step of stacking a transparent cover plate (5) on the sunshade plate (1) prior to separating the wafer stack (8) into individual optical devices (10).
3. A wafer stack (8) for the fabrication of integrated optical devices (10), the wafer stack (8) comprising at least a top wafer (2) carrying as functional elements a plurality of lenses (9a, 9b), at least one further wafer (4) comprising further functional elements (9c), the top wafer (2) being stacked on the further wafer, wherein corresponding functional elements of the top and further wafer (2, 4) are aligned with each other and define a plurality of main optical axes (14), wherein the wafer stack (8) further comprises a sunshade plate (1) comprising a plurality of through holes (6), the sunshade plate (1) being stacked on the top wafer (2), with the through holes (6) being arranged with said main optical axes (14).
4. The wafer stack (8) of claim 3, further comprising a transparent cover plate (5) stacked on the sunshade plate (1).
5. The wafer stack (8) of claim 3 or claim 4, wherein the sides (7) of the through holes (6) are tapered and have an angle between 20-40°, preferably 25-35°, with respect to the normal of the sunshade plate (1).
6. The wafer stack (8) of one of claims 3 to 5, wherein the thickness of the sunshade plate (1) is in the range of 0.1 to 1 millimeters.
7. The wafer stack (8) of one of claims 3 to 6, wherein the sunshade plate (1) is made of an optically intransparent material.
8. An integrated optical device (10), manufactured from a wafer stack according to one of the claims 3 to 7 by separating said wafer stack (8) into a plurality of integrated optical devices (10).
9. A sunshade plate (1) for an integrated optical device (10), for use in the method of one of claims 1 to 2, wherein the sunshade plate (1) comprises a plurality of through holes (6).
PCT/CH2008/000532 2007-12-19 2008-12-16 Wafer stack, integrated optical device and method for fabricating the same WO2009076788A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801270814A CN101971341B (en) 2007-12-19 2008-12-16 Wafer stack, integrated optical device and method for fabricating the same
US12/809,362 US8289635B2 (en) 2007-12-19 2008-12-16 Wafer stack, integrated optical device and method for fabricating the same
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011156928A2 (en) 2010-06-14 2011-12-22 Heptagon Oy Camera, and method of manufacturing a plurality of cameras
US20130019461A1 (en) * 2011-07-19 2013-01-24 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
WO2013049947A1 (en) * 2011-10-05 2013-04-11 Hartmut Rudmann Micro-optical system and method of manufacture thereof
JP2013531812A (en) * 2010-06-14 2013-08-08 ヘプタゴン・オサケ・ユキチュア Method for manufacturing a plurality of optical devices
US8674305B2 (en) * 2011-12-20 2014-03-18 Heptagon Micro Optics Pte. Ltd. Opto-electronic module and devices comprising the same
WO2014109711A1 (en) * 2013-01-10 2014-07-17 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including features to help reduce stray light and/or optical cross-talk
EP2784819A3 (en) * 2013-03-25 2014-10-29 Kabushiki Kaisha Toshiba Infrared imaging device and infrared imaging module
WO2015016775A1 (en) * 2013-07-30 2015-02-05 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
EP3024029A1 (en) 2014-11-19 2016-05-25 ams AG Semiconductor device comprising an aperture array and method of producing such a semiconductor device
US10437025B2 (en) 2015-01-26 2019-10-08 Omnivision Technologies, Inc. Wafer-level lens packaging methods, and associated lens assemblies and camera modules
US10455131B2 (en) 2015-01-26 2019-10-22 Omnivision Technologies, Inc. Wafer-level methods for packing camera modules, and associated camera modules
US10886420B2 (en) * 2016-04-08 2021-01-05 Ams Sensors Singapore Pte. Ltd. Thin optoelectronic modules with apertures and their manufacture

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872033B (en) * 2009-04-24 2014-04-30 鸿富锦精密工业(深圳)有限公司 Shading sheet array, manufacturing method thereof and lens module array
CN102045494A (en) * 2009-10-22 2011-05-04 国碁电子(中山)有限公司 Camera module and making method thereof
WO2012173252A1 (en) * 2011-06-17 2012-12-20 コニカミノルタアドバンストレイヤー株式会社 Method for manufacturing wafer lens, wafer lens, method for manufacturing lens unit, and lens unit
SG11201403240UA (en) * 2011-12-22 2014-07-30 Heptagon Micro Optics Pte Ltd Opto-electronic modules, in particular flash modules, and method for manufacturing the same
KR102208832B1 (en) * 2012-05-17 2021-01-29 에이엠에스 센서스 싱가포르 피티이. 리미티드. Assembly of wafer stacks
SG11201408451WA (en) 2012-07-03 2015-01-29 Heptagon Micro Optics Pte Ltd Use of vacuum chucks to hold a wafer or wafer sub-stack
US8606057B1 (en) 2012-11-02 2013-12-10 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including electrically conductive connections for integration with an electronic device
SG11201504456YA (en) * 2012-12-27 2015-07-30 Heptagon Micro Optics Pte Ltd Fabrication of optical elements and modules incorporating the same
US9923008B2 (en) * 2013-04-12 2018-03-20 Omnivision Technologies, Inc. Wafer-level array cameras and methods for fabricating the same
US9746349B2 (en) * 2013-09-02 2017-08-29 Heptagon Micro Optics Pte. Ltd. Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element
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WO2015050499A1 (en) * 2013-10-01 2015-04-09 Heptagon Micro Optics Pte. Ltd. Lens array modules and wafer-level techniques for fabricating the same
EP3080840B1 (en) * 2013-12-09 2019-05-22 Heptagon Micro Optics Pte. Ltd. Modules having multiple optical channels including optical elements at different heights above the optoelectronic devices
US9121994B2 (en) * 2013-12-17 2015-09-01 Anteryon Wafer Optics B.V. Method of fabricating a wafer level optical lens assembly
US9176261B2 (en) * 2014-02-17 2015-11-03 Genius Electronic Optical Co., Ltd. Optical lens assembly, array type lens module and method of making the array type lens module
US9711552B2 (en) * 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
TWI677991B (en) * 2015-11-04 2019-11-21 美商豪威科技股份有限公司 Wafer-level methods for packaging camera modules, and associated camera modules
JP2018109716A (en) * 2017-01-05 2018-07-12 ソニーセミコンダクタソリューションズ株式会社 Lens module, manufacturing method therefor, image capturing device, and electronic device
US10734184B1 (en) 2019-06-21 2020-08-04 Elbit Systems Of America, Llc Wafer scale image intensifier

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141562A (en) * 1982-02-17 1983-08-22 Fujitsu Ltd Manufacture of cooling type photoelectric transducer
DE20100418U1 (en) 2000-01-15 2001-04-26 Agilent Technologies, Inc., Palo Alto, Calif. Photodetector
US20040023469A1 (en) 2001-03-21 2004-02-05 Canon Kabushiki Kaisha Semiconductor device and its manufacture method
EP1434426A2 (en) * 2002-12-18 2004-06-30 Sanyo Electric Co., Ltd. Camera module and manufacturing method thereof
WO2005041561A1 (en) 2003-10-27 2005-05-06 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module
EP1653520A1 (en) * 2003-07-29 2006-05-03 Hamamatsu Photonics K.K. Backside-illuminated photodetector
WO2008011003A2 (en) * 2006-07-17 2008-01-24 Tessera North America, Inc. Camera system and associated methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1065132A (en) * 1996-08-14 1998-03-06 Sony Corp Semiconductor image pickup device
US6324010B1 (en) * 1999-07-19 2001-11-27 Eastman Kodak Company Optical assembly and a method for manufacturing lens systems
JP3887162B2 (en) * 2000-10-19 2007-02-28 富士通株式会社 Imaging semiconductor device
JP2002368235A (en) * 2001-03-21 2002-12-20 Canon Inc Semiconductor device and manufacturing method therefor
JP4030047B2 (en) * 2002-03-28 2008-01-09 シチズン電子株式会社 Small imaging module
JP2004029554A (en) * 2002-06-27 2004-01-29 Olympus Corp Image pickup lens unit and image pickup device
JP3981348B2 (en) * 2003-05-30 2007-09-26 松下電器産業株式会社 Imaging device and manufacturing method thereof
KR101227544B1 (en) * 2004-01-26 2013-01-31 디지털옵틱스 코포레이션 이스트 Thin camera having sub-pixel resolution
JP2005227500A (en) * 2004-02-12 2005-08-25 Fujinon Corp Imaging device
JP2007129164A (en) * 2005-11-07 2007-05-24 Sharp Corp Module for optical apparatus, method of manufacturing same, and structure
JP2011180293A (en) * 2010-02-26 2011-09-15 Fujifilm Corp Lens array

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141562A (en) * 1982-02-17 1983-08-22 Fujitsu Ltd Manufacture of cooling type photoelectric transducer
DE20100418U1 (en) 2000-01-15 2001-04-26 Agilent Technologies, Inc., Palo Alto, Calif. Photodetector
US20040023469A1 (en) 2001-03-21 2004-02-05 Canon Kabushiki Kaisha Semiconductor device and its manufacture method
EP1434426A2 (en) * 2002-12-18 2004-06-30 Sanyo Electric Co., Ltd. Camera module and manufacturing method thereof
EP1653520A1 (en) * 2003-07-29 2006-05-03 Hamamatsu Photonics K.K. Backside-illuminated photodetector
WO2005041561A1 (en) 2003-10-27 2005-05-06 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module
WO2008011003A2 (en) * 2006-07-17 2008-01-24 Tessera North America, Inc. Camera system and associated methods

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2223338A1 *

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CN103620779A (en) * 2011-07-19 2014-03-05 赫普塔冈微光有限公司 Opto-electronic modules and methods of manufacturing the same
US9966493B2 (en) 2011-07-19 2018-05-08 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
TWI557885B (en) * 2011-07-19 2016-11-11 新加坡恒立私人有限公司 Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
CN103512595B (en) * 2011-07-19 2016-08-10 赫普塔冈微光有限公司 Optical-electric module and manufacture method thereof and electrical equipment and the device comprising optical-electric module
US9164358B2 (en) 2011-10-05 2015-10-20 Heptagon Micro Optics Pte. Ltd. Micro-optical system and method of manufacture thereof
WO2013049947A1 (en) * 2011-10-05 2013-04-11 Hartmut Rudmann Micro-optical system and method of manufacture thereof
US9000377B2 (en) 2011-12-20 2015-04-07 Heptagon Micro Optics Pte. Ltd. Opto-electronic module and devices comprising the same
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WO2014109711A1 (en) * 2013-01-10 2014-07-17 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including features to help reduce stray light and/or optical cross-talk
US9613939B2 (en) 2013-01-10 2017-04-04 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including features to help reduce stray light and/or optical cross-talk
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