JPS58141562A - Manufacture of cooling type photoelectric transducer - Google Patents
Manufacture of cooling type photoelectric transducerInfo
- Publication number
- JPS58141562A JPS58141562A JP57025037A JP2503782A JPS58141562A JP S58141562 A JPS58141562 A JP S58141562A JP 57025037 A JP57025037 A JP 57025037A JP 2503782 A JP2503782 A JP 2503782A JP S58141562 A JPS58141562 A JP S58141562A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photoelectric conversion
- photoelectric transducer
- openings
- receiving elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000001816 cooling Methods 0.000 title claims description 9
- 239000011347 resin Substances 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims 1
- 230000000007 visual effect Effects 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 239000009719 polyimide resin Substances 0.000 abstract description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 13
- 238000001514 detection method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 3
- 238000003331 infrared imaging Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009956 embroidering Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は冷却型光電変換装置の製造方法に係り、特に複
数の受光素子をそなえた赤外線用光電便挨素子の各受光
素子に対する視野決定用開孔を有するコールドシールド
の形成方法に関するものである。
Ａ７、山 従来技術と
１川題点
一般に赤外線出光電変換装置は透光窓を設けたガラス等
からなる夕）管と、該透光窓に対向して赤外線検知素子
を峨１ｄシた冷却ユニットを配設した内管とからなる一
重管構造の気密容器を主体としてなり、ｆ’＋ｉｌ記冷
却ユニツト−ヒには、上部に赤外線検知素子に対する視
野決定用開孔を有するニッケｚしくＮｉ）等からなる金
属面状のコールドシールドが配置され、前記赤外線検知
素子及びコールドシールドを液体窒素等の冷媒やジュー
ルトムソン型の冷却器等を用いて所定の低温に冷却して
動作させ、観測対象物からの赤外光以外の不要な背景輻
射が前記赤外線検知素子の受光部に入射することをコー
ルドシールドによって制御する形でｌｋｌ測すべき赤外
光を透光窓およびコールドシールドの視野法定用開孔を
ｄして赤外線検知素子の受光部に入射せしめる構成とさ
れている。Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to a method for manufacturing a cooled photoelectric conversion device, and particularly to a method for determining the field of view for each light receiving element of an infrared photoelectric conversion device having a plurality of light receiving elements. The present invention relates to a method of forming a cold shield having openings.
A7, Mountain Prior Art and Issues In general, an infrared light-emitting electric conversion device consists of a tube made of glass or the like with a light-transmitting window, and a cooling unit with an infrared detecting element placed opposite the light-transmitting window. The main body is an airtight container with a single-tube structure consisting of an inner tube with A metal surface cold shield made of The infrared light to be measured is controlled by the cold shield to prevent unnecessary background radiation other than the infrared light from entering the light receiving part of the infrared sensing element. d and makes it incident on the light receiving section of the infrared detection element.
ところで上述の如き赤外線用光電父（！Ｉ！！装置に、
複数の受光素子を有する多素子型の赤外線検知素子が組
込１れた構造のものにあっては、第１図の菅部斜視図に
示すように、内管１の冷却Ｊｌ（台２ 、＋−。By the way, in the infrared photoelectric device (!I!!) as mentioned above,
In the case of a structure in which a multi-element type infrared detection element having a plurality of light receiving elements is incorporated, as shown in the perspective view of the tube part in FIG. +-.
にサファイアあるいは高比抵抗のＳｌ−寺からなる支持
板８を介して複数の蛍光索子４ａ、４ｂ・・・・・・４
ｅが配列された例えばＬ−１ｇＣは’ｒｅ＊の多元半導
体からなる多索子型赤外脈炊知索子４が載置固定され、
該多素子型赤外線便知素子４を含むＡｉＪ記冷却基台２
上に、複数の受光素子４ａ、４ｂ・・・・・・４ ｅ
Ｖｃ対応した共通の視野決定用開孔６を有するコールド
シールド５が図ボのように配設され、外来赤外光はその
開孔６を辿って谷受光累子４ａ〜４ｅに入射するように
構成されている。A plurality of fluorescent cords 4a, 4b...4
For example, in L-1gC where e is arranged, a multi-strand type infrared pulse detection probe 4 made of a multi-component semiconductor of 're* is placed and fixed,
AiJ cooling base 2 including the multi-element type infrared sensing element 4
On top, a plurality of light receiving elements 4a, 4b...4e
A cold shield 5 having a common visual field determining aperture 6 corresponding to Vc is arranged as shown in the figure, and the external infrared light follows the aperture 6 and enters the valley receivers 4a to 4e. It is configured.
ところがＥ記したコールドシールド５の視野決定用開孔
６が、例えば各受光素子４ａ〜４ｅ（１）配列ピッチが
それぞれ曲常数ＩＯμｍ〜５０μｍ４！ＩＩ！曳でめり
、該受光素子４ａ〜４θの谷々に対応した個別の現野決
定用開孔會コールドシールド５に列設−することは、七
の構造玉困難であるため止むを碍ず全受光索子４ａ〜４
ｅに対応した共通なものにり、−？：めゐ。However, in the field-of-field determining aperture 6 of the cold shield 5 described in E, for example, each of the light receiving elements 4a to 4e (1) has an arrangement pitch of a curvature constant of IO μm to 50 μm4! II! Since it is difficult to pull out and line up the individual field-determining holes in the cold shield 5 corresponding to the valleys of the light-receiving elements 4a to 4θ, it is unavoidable to completely Light receiving cables 4a-4
The common thing corresponding to e, -? : Mei.
従ってかかる視野決定用開孔６に起因して例えば受光索
子４ａ〜４ｅ（１）配列方向の視野が必要以トに拡大さ
れ、不安な背景ｌｌ＃ＩＩ剤が各受光索子４ａ〜４ｅへ
不ｔＩＪ避的に入射される不（ｉｌｓαがあり、検知１
・８度等の性能を低「させるばかりでなく、谷受光索子
４υ５〜４ｅの配列位置により各々実質的な視野が異な
ることから当該装置の検知特性が不均一になる咎の欠点
があった。Therefore, due to the visual field determining aperture 6, the field of view in the direction in which the light-receiving strands 4a to 4e (1) are arranged is unnecessarily expanded, and the uneasy background 11#II agent is directed to each of the light-receiving strands 4a to 4e. There is an unavoidably incident un(ilsα), and detection 1
・Not only did it lower the performance of 8 degrees, etc., but the detection characteristics of the device were also uneven because the actual field of view differed depending on the arrangement position of the valley light receiving probes 4υ5 to 4e. .
ｔＣ）発明の目的
本発明は」二連の点を克服するためになされたもので、
その目的は各受光素子ごとに対応する視野決定用開孔を
有するコールドシールドを樹脂を用いて多素子型赤外線
用光市変換累子上に一体的に形成し、検知感度及び梗知
特性の均一性を向丘１〜イ４る冷却型光′ｒＫ変換装置
の製造方法を提供するにある。tC) Purpose of the Invention The present invention has been made to overcome two points:
The purpose of this is to integrally form a cold shield with a field-of-view determining aperture corresponding to each light-receiving element on a multi-element infrared optical conversion element using resin, thereby achieving uniform detection sensitivity and recognition characteristics. The object of the present invention is to provide a method for manufacturing a cooling type optical 'rK conversion device having various properties.
（￥ づ６明の４角［戊
即ち本発明による冷却型光電変換装置の製造方法は、支
持根土に配設式れた複数の蛍光素子が形成した後、 ｎ
ｉ１石谷受光索子領域−Ｈの金属膜及び樹脂層を所定パ
ターンで選択的にエツチングすることにより、１１１１
記半４体光電変換索子上に谷受光素子対応の視野決定用
開孔を窪設置〜だ、１−ルｌシールドを一１杢的に設け
るようにしたことを特峨とするものである。(In other words, in the method for manufacturing a cooled photoelectric conversion device according to the present invention, after forming a plurality of fluorescent elements disposed on a supporting soil,
1111 by selectively etching the metal film and resin layer of the i1 Ishitani photoreceptor region-H in a predetermined pattern.
A hole for determining the field of view corresponding to the valley light receiving element is installed in a depression on the photoelectric conversion cable of the four-piece photoelectric conversion element, and the special feature is that the 1-1 shield is arranged in a 11-square manner. .
（ｅｌ 発明の実施例
以下図面を用いて本発明の好ましい’１ＢｊＷ方法の実
施例について詳卸１に説明する。(el) Embodiments of the Invention Examples of the preferred '1BjW method of the present invention will be explained in detail below with reference to the drawings.
第２図乃至第５図は本発明に保る冷却型光電変換装置の
製造方法、特に赤外線用半導体光市変換系子上にコール
ドシールドを一体的に形成する方法の一実施例を工程順
に不す断面図である。FIGS. 2 to 5 show an embodiment of a method for manufacturing a cooled photoelectric conversion device according to the present invention, particularly a method for integrally forming a cold shield on an infrared semiconductor optical conversion system, in the order of steps. FIG.
まず第２図に示すように例えばす゛ファイアまたは高比
抵抗８１等からなる支持板２１上にＭｊｌ剤で固着され
たＨｇ；Ｃｄ’ｒｅ等の多元半導体基板２２に従来から
の製危工程によって複数の受光素子２３ａ〜２８θを形
成する。次いで第８図に示すように１１１１記多元半１
４体基板（以下半導体光電変換素子と呼ぶ）２２上のｔ
ｖｒ定面上に樹脂相、例えばホリイミ厚さのｗ）旧暦２
４を形成する。上記ポリイミド樹脂は粘度が尚く、塗布
硬化の工程を繰返して積層状に形成すれば谷筋に厚層を
形成することができ、また便化によって体積が収縮する
ことがない特性を有している。しかる債前記樹脂層２４
上に赤外光が透過しない例えばインジウム（工ｎ）ある
いはアルミニウム（１り等からなる金属膜２５を蒸着法
等により被着し、さらにその上面にフォトレジスト膜２
６を塗布する。次いで該フォトレジスト膜２６を所定の
パターンにパメーニングして該レシメトマヌクより露呈
した金属膜２６を第４図に示すように選択的にエツチン
グ除去する。引き続いて６ｔＪ Ｍｅレジスト膜２６の
パターンをマスクにして第５図ＶＣ７１りす如く、樹脂
層２４１ｋ例えばエチレンジアミンとヒドラジンの混合
液によって選択的にエツチング除去して前記半導体光電
変換索子２２上に形成されている複数の受光素子２８ａ
〜２８ｅの各々に対応した視野決定用開孔２４ａ〜２４
８を形成（〜、その後前記レシヌト１換を除去する。こ
のようドラジンの混合液によって選択的にエツナ／グ奮
繍すことによって受光素子２８ａ〜２８ｅの谷々に対応
した視野決定用開孔２４ａ〜２４θを所望とする用度を
もつテーバ状に再現性よく、かつ容易に形成することが
でき、かかる視野決定用開孔２４ａ〜２・１ｅが穿設式
れたコールドンールド２７ケ半導陣光゛ｌ肛父換累子２
２．にに一捧的に設けることができる。First, as shown in FIG. 2, a plurality of semiconductor substrates 22 such as Hg; The light receiving elements 23a to 28θ are formed. Next, as shown in FIG.
t on the four-body substrate (hereinafter referred to as semiconductor photoelectric conversion element) 22
Resin phase on vr constant surface, for example, Horiimi thickness w) Lunar calendar 2
form 4. The above-mentioned polyimide resin has a high viscosity, and if the coating and curing process is repeated to form a layer, a thick layer can be formed in the valleys, and the resin does not shrink in volume due to faeces. There is. The resin layer 24
A metal film 25 made of, for example, indium or aluminum, through which infrared light does not pass, is deposited on top by a vapor deposition method, and a photoresist film 2 is further applied on the top surface.
Apply 6. Next, the photoresist film 26 is patterned into a predetermined pattern, and the metal film 26 exposed from the reciprocating mask is selectively etched away as shown in FIG. Subsequently, using the pattern of the 6tJ Me resist film 26 as a mask, as shown in FIG. A plurality of light receiving elements 28a
-28e for visual field determination apertures 24a-24 corresponding to each of
8 is then removed. By selectively embroidering the dorazine mixture in this way, the visual field determining openings 24a corresponding to the valleys of the light-receiving elements 28a to 28e are formed. 27 cold mold semiconductors that can be easily formed into a tapered shape with a desired angle of ~24θ with good reproducibility and are provided with such visual field determining holes 24a to 2 and 1e. Jinkou's anal father replacement child 2
2. It can be provided on a dedicated basis.
よって上記のダ１」＜コールドシールド２’１−−−ｉ
ＪＷ的に杓・４成した半４陣光１Ｊ１父挨素子２２を第
６図にボすように装置の冷却基台２８Ｊ：に配設すれば
、装置ｄの組立工程が面単化する。また当該コー／ｖト
シールド２７は、半４体光電変換累子２２と共Ｖこ同時
に低温に冷却きれる。Therefore, the above Da1''<Cold Shield 2'1---i
If the semi-quadruple light 1J1 father element 22, which has been formed into JW-like structures, is placed on the cooling base 28J of the apparatus as shown in FIG. 6, the assembly process of the apparatus d can be simplified. Further, the coat/v coat shield 27 can be cooled down to a low temperature at the same time as the semi-quadram photoelectric conversion element 22.
＋ｎ 発明の効果
以上の説明から明らかなように本発明に係る冷却型光電
変換装置の製造方法によれば、多素子型光電変換素子上
に、複数の１受光累子の谷々に対応した視野決定用開孔
を有するコールドシールド會−＋的に稍度工く、かつ容
易に形１戊することができるので、従来の妬き全蛍光調
子に共和の況１Ｍ沃定用開孔を有するコールドシールド
を用いたものに比べ、本発明の製造方法によって構成さ
れた例えば赤外線用の多素子型光電変換装置は感度及び
検知特性の均一性が向上するばかりでなく安価に実現で
きる利点を有【７、赤外線撮像装置等に使用する赤外線
撮像装置に通用して極めて有利である。+n Effects of the Invention As is clear from the above explanation, according to the method for manufacturing a cooled photoelectric conversion device according to the present invention, a field of view corresponding to the valleys of a plurality of one light-receiving elements is formed on a multi-element photoelectric conversion element. A cold shield with a 1M diameter aperture is designed to be more precise and can be easily shaped. For example, a multi-element photoelectric conversion device for infrared light constructed by the manufacturing method of the present invention not only has improved sensitivity and uniformity of detection characteristics, but also has the advantage that it can be realized at a low cost [7, It is extremely advantageous for use in infrared imaging devices used in infrared imaging devices and the like.
第１図は従来の冷却型光電変換装置の要部構造を模式的
に示した透視斜視図、第２図〜第５図は本弁明に係る冷
却型光電変換装置の製造方法の一実施例を工程）唄に示
す要部断面図、第６図は本発明の製造方法によって得ら
れた冷却型光電変換装置の要部構造會模式的にボした斜
視図である。
図において２１は支持板、２２は多元半導体基数、２８
ａ〜２３θは複数の受光系子、２４は樹脂層、２４ａ〜
２４ｅｒｉ祝野沃定用開孔、２５は金属膜、２６はフ第
１・レンスト１ｌＬ２７はコールドシールトヲボ丁。FIG. 1 is a transparent perspective view schematically showing the main structure of a conventional cooled photoelectric conversion device, and FIGS. 2 to 5 show an example of a method for manufacturing a cooled photoelectric conversion device according to the present invention. Step) Fig. 6 is a cross-sectional view of the main part shown in the song, and a schematic perspective view of the main part structure of the cooling type photoelectric conversion device obtained by the manufacturing method of the present invention. In the figure, 21 is a support plate, 22 is a multi-semiconductor base number, and 28
a~23θ are a plurality of light receiving elements, 24 is a resin layer, 24a~
24 is the opening for the opening, 25 is the metal film, 26 is the first lens, and 27 is the cold seal hole.
Claims (1)
なる半導体光電変換素子の所定面上に、（封脂層を形成
し、該樹脂層上にさらに金属膜を被瘤形成した後、Ｍｉ
Ｊ記各受光素子領域上の金属膜及び樹脂層を所定パター
ンで選択的にエツチングすることにより、前記半導体光
電変換素子上に各受光素子対応の視野決定用開孔を穿設
したコールドシールドを一体的に設けるようにしたこと
を特徴とする冷却型光電変換装置の製造方法。A sealing layer was formed on a predetermined surface of a semiconductor photoelectric conversion element in which a plurality of light-receiving elements arranged on a support plate were shaped like Q15, and a metal film was further formed on the resin layer. After, Mi
By selectively etching the metal film and resin layer on each light-receiving element region in a predetermined pattern, a cold shield with field-of-view determining holes formed for each light-receiving element is formed on the semiconductor photoelectric conversion element. 1. A method of manufacturing a cooling type photoelectric conversion device, characterized in that the cooling type photoelectric conversion device is provided with a cooling type photoelectric conversion device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57025037A JPS58141562A (en) | 1982-02-17 | 1982-02-17 | Manufacture of cooling type photoelectric transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57025037A JPS58141562A (en) | 1982-02-17 | 1982-02-17 | Manufacture of cooling type photoelectric transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58141562A true JPS58141562A (en) | 1983-08-22 |
Family
ID=12154706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57025037A Pending JPS58141562A (en) | 1982-02-17 | 1982-02-17 | Manufacture of cooling type photoelectric transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58141562A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117662A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Infrared ray detector |
| WO2009076788A1 (en) * | 2007-12-19 | 2009-06-25 | Heptagon Oy | Wafer stack, integrated optical device and method for fabricating the same |
-
1982
- 1982-02-17 JP JP57025037A patent/JPS58141562A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117662A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Infrared ray detector |
| JPH0525183B2 (en) * | 1983-11-30 | 1993-04-12 | Fujitsu Ltd | |
| WO2009076788A1 (en) * | 2007-12-19 | 2009-06-25 | Heptagon Oy | Wafer stack, integrated optical device and method for fabricating the same |
| US8289635B2 (en) | 2007-12-19 | 2012-10-16 | Heptagon Micro Optics Pte. Ltd. | Wafer stack, integrated optical device and method for fabricating the same |
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