WO2009072746A2 - Manufacturing method of single crystal terminal for electric connector and the single crystal terminal - Google Patents

Manufacturing method of single crystal terminal for electric connector and the single crystal terminal Download PDF

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Publication number
WO2009072746A2
WO2009072746A2 PCT/KR2008/006359 KR2008006359W WO2009072746A2 WO 2009072746 A2 WO2009072746 A2 WO 2009072746A2 KR 2008006359 W KR2008006359 W KR 2008006359W WO 2009072746 A2 WO2009072746 A2 WO 2009072746A2
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Prior art keywords
single crystal
terminal
processing
shape
primary
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PCT/KR2008/006359
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French (fr)
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WO2009072746A3 (en
Inventor
Se Young Jung
Sang Eon Park
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Pusan National University Industrial-University Cooperation Foundation
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Publication of WO2009072746A2 publication Critical patent/WO2009072746A2/en
Publication of WO2009072746A3 publication Critical patent/WO2009072746A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/16—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for manufacturing contact members, e.g. by punching and by bending

Definitions

  • the present invention relates to a method of manufacturing a single crystal terminal for an electrical connector and a single crystal terminal, and more particularly, to a method of manufacturing a single crystal terminal, which includes growing a single crystal using a single crystal growth process and then forming terminals adequate for various purposes from the grown single crystal, and to a single crystal terminal.
  • An electrical connector is part of the process of mutually connecting various electrical and electronic devices and transmitting or receiving electrical and electronic signals, and either or both ends of the connector are typically provided with a terminal.
  • an object of the present invention is to provide a method of manufacturing a single crystal terminal for an electrical connector, including growing a metal single crystal and then processing the metal single crystal into a predetermined shape, thus obtaining a single crystal terminal having high quality, and also to provide a single crystal terminal.
  • the present invention provides a method of manufacturing a single crystal terminal for an electrical connector, including growing a single crystal from one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel, and processing the grown single crystal into a shape of a terminal for an electrical connector and also provides a single crystal terminal manufactured thereby.
  • growing the single crystal may be performed by placing one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel in a crystal growth crucible, heating and melting the metals placed in the crystal growth crucible, and growing the single crystal using the metal crystal as a seed through a Czochralski or Bridgman process.
  • processing the grown single crystal may be performed through primary processing in which the grown single crystal is cut into a shape of a cylindrical or rectangular block and secondary processing in which the single crystal block is processed into the shape of the terminal for a connector of electrical and electronic parts.
  • secondary processing may be performed by cutting the single crystal subjected to primary processing to correspond to a diameter of the terminal, thus forming a primary processed product, which is then cut to correspond to a length of the terminal, thereby producing a secondary processed product having a cylindrical shape.
  • secondary processing may be performed by cutting the single crystal subjected to primary processing to correspond to a shape of a cross- section of the terminal, thus forming a primary processed product, which is n
  • Secondary processing may be performed through electrical discharge machining or water jet machining.
  • Secondary processing may be performed by cutting the single crystal subjected to primary processing into sheets, layering the sheets, and then simultaneously forming the sheets into terminals, and may be carried out through any one selected from among die pressing, electrical discharge machining and water jet machining.
  • the surface of the single crystal terminal may be coated with a conductive metal .
  • FIG. 1 shows a photograph of a silver single crystal formed according to an embodiment of the present invention.
  • FIG. 2 shows a process of manufacturing a cylinder-shaped single crystal terminal for an electrical connector according to the present invention.
  • FIG. 3 shows a process of manufacturing a Y-shaped single crystal terminal for an electrical connector according to the present invention.
  • FIG. 4 shows a process of manufacturing a Y-shaped single crystal terminal for an electrical connector using a die press according to the present invention.
  • FIGS. 5 to 8 show application examples of the single crystal terminal for an electrical connector according to the present invention. ⁇ 2i> description of the Reference Numerals in the Drawings>
  • ⁇ 23> 100 cylindrical or rectangular block
  • a mass of metal (which is selected from among gold, silver, copper, aluminum, nickel, and other metals) to be grown is placed in a crystal growth crucible (e.g. boron nitride (BN) crucible, quartz crucible, graphite crucible, alumina crucible, etc.), after which the crystal growth crucible including the mass of metal is heated through induction heating using induction coils or by means of a carbon heater, thus melting the mass of metal.
  • a crystal growth crucible e.g. boron nitride (BN) crucible, quartz crucible, graphite crucible, alumina crucible, etc.
  • an example of the crystal growth crucible includes a graphite crucible or a double structure crucible composed of a graphite crucible as an outer crucible and, as an inner crucible, any one selected from among a BN crucible, a quartz crucible and an alumina crucible.
  • the crystal growth crucible particularly useful is a graphite crucible or a double structure crucible in which an outer crucible is a graphite crucible.
  • the reason why the crystal growth crucible is used as a heating element is that it is difficult to control the temperature during induction heating when the amount of the molten mass remaining in the crucible becomes reduced in the course of growing the metal single crystal. Controlling the temperature of the crystal growth crucible itself using the crystal growth crucible as the heating element facilitates the growth of the metal single crystal.
  • the growth crucible, copper and silver are subjected to induction heating to the melting points of the metals using RF coating. In this case, copper and silver having melting points of 1083°C and 962°C respectively are heated to temperatures about 30 ° C higher than the above melting points, thus completely melting the copper and silver.
  • a seed crystal having a desired crystal structure is manufactured and grown into a single crystal using a Czochralski process.
  • the seed crystal is manufactured in the form of a rod in each of (100), (110) and (111) directions.
  • the growth of the copper single crystal requires a growth temperature in the range of 1100-1000°C
  • the growth of the silver single crystal requires a growth temperature in the range of 1000 ⁇ 900°C.
  • the single crystal may also be grown through a Bridgman process, which naturally falls within the scope of the present invention.
  • FIG. 1 illustrates the silver single crystal.
  • a terminal which has a shape of a cylindrical pin or is U-shaped is described.
  • the shape of the terminal may vary depending on the specific uses of the electrical and electronic devices and the type of signals being transmitted or received.
  • the application field thereof includes a terminal for a connector of audio-video equipment, a cable terminal for a sound recorder, a terminal for a measuring instrument, a power code terminal, a video HDMI terminal, a RF microwave coaxial cable terminal, a video cable contact terminal for medical service, an S-video terminal, a Y- shaped terminal, a component terminal, a speaker terminal, a TV coaxial terminal, a digital terminal (coaxial/optical), a sub-upper terminal, a DVI- HDMI terminal, a power terminal for home, a 75 ⁇ RCA coaxial digital terminal, a terminal for a medical endoscope, a robot terminal in the precision industry, a 75 ⁇ BNC coaxial digital terminal, a balanced line terminal, a high picture quality transmittable S-VHS video
  • FIGS. 5 to 8 show some application examples of the single crystal terminal of the electrical connector.
  • FIG. 5 illustrates the connector for a sound recorder
  • FIG. 6 illustrates the connector for audio-video equipment
  • FIG. 7 illustrates the video HDMI cable
  • FIG. 8 illustrates the power code terminal.
  • the terminal which is the contact portion of respective connectors or cables is formed of the single crystal.
  • the single crystal grown from copper or silver as above and having a slightly irregular outer appearance is primarily cut into a shape of cylindrical or rectangular block 100.
  • the shape of the processed single crystal is not limited to the cylindrical or rectangular block, but the single crystal may be processed into a shape which is easily processed and which maximally reduces the waste of material depending on the shape of a terminal which is finally produced through secondary processing.
  • the cylindrical or rectangular block 100 is cut to correspond to the diameter of the cylindrical pin, thus obtaining a primary processed product 200.
  • the cylindrical or rectangular block 100 is formed to be much larger than the size of the terminal, and thus, more than one primary processed product 200 may be manufactured from a single cylindrical or rectangular block 100, and each is formed longer than the final terminal.
  • the primary processed product 200 is cut to correspond to the length of the terminal, thus obtaining a secondary processed product 300 having a cylindrical shape, after which the end or side thereof is processed depending on the final use, thereby completing a cylindrical terminal.
  • a IJ- or Y-shaped terminal is formed from a sheet or rectangular shape, compared to the cylindrical pin.
  • ⁇ 4i> The single crystal block subjected to primary processing and formed into the shape of cylindrical or rectangular block 100 is subjected to secondary processing to form a terminal.
  • the use of a rectangular block is favorable because it reduces the waste of material and is easily processed. Hence, the method of manufacturing the terminal from the rectangular block is described below.
  • the rectangular block 100 is cut to correspond to the shape of the cross-section of the terminal, for example, an approximate Y shape, thus obtaining a primary processed product 200.
  • This primary processed product 200 is illustrated in FIG. 3.
  • the cross-section thereof may correspond to the shape of the terminal but may be formed extra thick.
  • the primary processed product is cut to correspond to the width of the terminal, thus obtaining a secondary processed product 300, after which the end or side thereof is processed depending on the final use, thereby completing a Y- or U-shaped terminal .
  • the single crystal cylindrical or rectangular block 100 subjected to primary processing is cut into sheets each having a thickness corresponding to the thickness of the terminal, after which the sheets are layered and formed into terminals at the same time.
  • This processing method may be selected from among a die press 20, electrical discharge machining using a wire cut 10, and water jet machining.
  • the surface of the single crystal terminal thus obtained is coated with a highly conductive metal, preferably, rhodium, it can be prevented from being damaged by external causes such as impact. As well, because unidirectional deposition is performed on the surface of the single crystal, superior electrical and optical properties can be exhibited.
  • the terminal manufactured from the grown single crystal metal as above is attached to the end of a high-quality connector, in particular, the end of a connector having single crystal wires embedded therein, thus improving the quality of electrical signals in the connection with video and audio equipment and so on.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Conductive Materials (AREA)

Abstract

Disclosed is a method of manufacturing a single crystal terminal for an electrical connector and a single crystal terminal. The method includes growing a single crystal from one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel, and processing the grown single crystal into the shape of the terminal for the electrical connector. When the single crystal terminal having a predetermined shape formed from the grown metal single crystal is attached to the end of a connector for connecting electrical and electronic devices, high resolution and high output can be realized and noise can be eliminated. In particular, when the single crystal terminal is employed in video/audio equipment, high- end video and audio can be exhibited.

Description

[DESCRIPTION] [Invention Title]
MANUFACTURING METHOD OF SINGLE CRYSTAL TERMINAL FOR ELECTRIC CONNECTOR AND THE SINGLE CRYSTAL TERMINAL
[Technical Field]
<i> The present invention relates to a method of manufacturing a single crystal terminal for an electrical connector and a single crystal terminal, and more particularly, to a method of manufacturing a single crystal terminal, which includes growing a single crystal using a single crystal growth process and then forming terminals adequate for various purposes from the grown single crystal, and to a single crystal terminal. [Background Art]
<2> An electrical connector is part of the process of mutually connecting various electrical and electronic devices and transmitting or receiving electrical and electronic signals, and either or both ends of the connector are typically provided with a terminal.
<3> Thorough research into increasing the quality of the connector has been conducted to date, but has mainly been focused on a cable of the connector. So, research into a terminal facilitating direct contact between the connector and the electrical device is inadequate.
<4> A conventional terminal is used in a manner such that a typical alloy is cast or injection molded into various shapes depending on the needs therefor and then attached to the end of the electrical connector. <5> Thus, in order to develop the connector having high quality, not only the cable of the connector but also the terminal thereof should be devised to be of high quality. [Disclosure] [Technical Problem]
<6> Accordingly, the present invention has been made keeping in mind the above problems occurring in the related art, and an object of the present invention is to provide a method of manufacturing a single crystal terminal for an electrical connector, including growing a metal single crystal and then processing the metal single crystal into a predetermined shape, thus obtaining a single crystal terminal having high quality, and also to provide a single crystal terminal.
[Technical Solution]
<7> In order to achieve the above object, the present invention provides a method of manufacturing a single crystal terminal for an electrical connector, including growing a single crystal from one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel, and processing the grown single crystal into a shape of a terminal for an electrical connector and also provides a single crystal terminal manufactured thereby.
<8> In the method, growing the single crystal may be performed by placing one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel in a crystal growth crucible, heating and melting the metals placed in the crystal growth crucible, and growing the single crystal using the metal crystal as a seed through a Czochralski or Bridgman process.
<9> In the method, processing the grown single crystal may be performed through primary processing in which the grown single crystal is cut into a shape of a cylindrical or rectangular block and secondary processing in which the single crystal block is processed into the shape of the terminal for a connector of electrical and electronic parts.
<io> As such, secondary processing may be performed by cutting the single crystal subjected to primary processing to correspond to a diameter of the terminal, thus forming a primary processed product, which is then cut to correspond to a length of the terminal, thereby producing a secondary processed product having a cylindrical shape.
<ii> Also, secondary processing may be performed by cutting the single crystal subjected to primary processing to correspond to a shape of a cross- section of the terminal, thus forming a primary processed product, which is n
then cut to correspond to a width of the terminal, thereby producing a secondary processed product . <i2> Secondary processing may be performed through electrical discharge machining or water jet machining. <13> Also, secondary processing may be performed by cutting the single crystal subjected to primary processing into sheets, layering the sheets, and then simultaneously forming the sheets into terminals, and may be carried out through any one selected from among die pressing, electrical discharge machining and water jet machining. <14> The surface of the single crystal terminal may be coated with a conductive metal .
[Advantageous Effects] <15> According to the present invention, a metal single crystal is grown, formed into a single crystal terminal having a predetermined shape, and then attached to the end of a connector for use in the connection of electrical and electronic devices, thereby realizing high resolution and high output and eliminating noise. In particular, when the single crystal terminal is used in video or audio equipment, high-end video and audio can be exhibited. [Description of Drawings] <i6> FIG. 1 shows a photograph of a silver single crystal formed according to an embodiment of the present invention. <17> FIG. 2 shows a process of manufacturing a cylinder-shaped single crystal terminal for an electrical connector according to the present invention. <18> FIG. 3 shows a process of manufacturing a Y-shaped single crystal terminal for an electrical connector according to the present invention. <19> FIG. 4 shows a process of manufacturing a Y-shaped single crystal terminal for an electrical connector using a die press according to the present invention. <20> FIGS. 5 to 8 show application examples of the single crystal terminal for an electrical connector according to the present invention. <2i> description of the Reference Numerals in the Drawings>
<22> 10: wire cut 20: die press
<23> 100: cylindrical or rectangular block
<24> 200: primary processed product
<25> 300: secondary processed product [Best Mode]
<26> Hereinafter, a detailed description will be given of preferred embodiments of the present invention with reference to the appended drawings.
<27> A mass of metal (which is selected from among gold, silver, copper, aluminum, nickel, and other metals) to be grown is placed in a crystal growth crucible (e.g. boron nitride (BN) crucible, quartz crucible, graphite crucible, alumina crucible, etc.), after which the crystal growth crucible including the mass of metal is heated through induction heating using induction coils or by means of a carbon heater, thus melting the mass of metal. In the present invention, an example of the crystal growth crucible includes a graphite crucible or a double structure crucible composed of a graphite crucible as an outer crucible and, as an inner crucible, any one selected from among a BN crucible, a quartz crucible and an alumina crucible.
<28> In the present invention, a method of growing copper and silver single crystals is specifically described below.
<29> Because copper and silver do not rapidly form a chemical bond with carbon, as the crystal growth crucible, particularly useful is a graphite crucible or a double structure crucible in which an outer crucible is a graphite crucible. The reason why the crystal growth crucible is used as a heating element is that it is difficult to control the temperature during induction heating when the amount of the molten mass remaining in the crucible becomes reduced in the course of growing the metal single crystal. Controlling the temperature of the crystal growth crucible itself using the crystal growth crucible as the heating element facilitates the growth of the metal single crystal. The growth crucible, copper and silver are subjected to induction heating to the melting points of the metals using RF coating. In this case, copper and silver having melting points of 1083°C and 962°C respectively are heated to temperatures about 30°C higher than the above melting points, thus completely melting the copper and silver.
<30> Further, a seed crystal having a desired crystal structure is manufactured and grown into a single crystal using a Czochralski process. The seed crystal is manufactured in the form of a rod in each of (100), (110) and (111) directions. The growth of the copper single crystal requires a growth temperature in the range of 1100-1000°C, and the growth of the silver single crystal requires a growth temperature in the range of 1000~900°C. Through the Czochralski process using the seed crystal which is grown under a condition in which the temperature of the liquid phase is adjusted at a rate of 0.1-1 °C/min, the copper and silver single crystals having high quality are grown.
<3i> Although the method of growing the single crystal using the Czochralski process is described above, the single crystal may also be grown through a Bridgman process, which naturally falls within the scope of the present invention.
<32> After the above procedure, the copper or silver single crystal having a shape similar to that shown in FIG. 1 is obtained. FIG. 1 illustrates the silver single crystal.
<33> The single crystal thus grown, having a size of at least 10 cm as illustrated in FIG. 1, is cut and processed, thus producing a final single crystal terminal having a desired shape.
<34> In the present invention, a terminal which has a shape of a cylindrical pin or is U-shaped is described. The shape of the terminal may vary depending on the specific uses of the electrical and electronic devices and the type of signals being transmitted or received. The application field thereof includes a terminal for a connector of audio-video equipment, a cable terminal for a sound recorder, a terminal for a measuring instrument, a power code terminal, a video HDMI terminal, a RF microwave coaxial cable terminal, a video cable contact terminal for medical service, an S-video terminal, a Y- shaped terminal, a component terminal, a speaker terminal, a TV coaxial terminal, a digital terminal (coaxial/optical), a sub-upper terminal, a DVI- HDMI terminal, a power terminal for home, a 75 Ω RCA coaxial digital terminal, a terminal for a medical endoscope, a robot terminal in the precision industry, a 75 Ω BNC coaxial digital terminal, a balanced line terminal, a high picture quality transmittable S-VHS video terminal, a high picture quality detachable component video terminal, etc.
<35> FIGS. 5 to 8 show some application examples of the single crystal terminal of the electrical connector. FIG. 5 illustrates the connector for a sound recorder, FIG. 6 illustrates the connector for audio-video equipment, FIG. 7 illustrates the video HDMI cable, and FIG. 8 illustrates the power code terminal. The terminal which is the contact portion of respective connectors or cables is formed of the single crystal.
<36> In the present invention, with reference to FIG. 2, the method of manufacturing a terminal having a shape of a cylindrical pin is described be1ow.
<37> The single crystal grown from copper or silver as above and having a slightly irregular outer appearance is primarily cut into a shape of cylindrical or rectangular block 100. As such, the shape of the processed single crystal is not limited to the cylindrical or rectangular block, but the single crystal may be processed into a shape which is easily processed and which maximally reduces the waste of material depending on the shape of a terminal which is finally produced through secondary processing.
<38> Next, the cylindrical or rectangular block 100 is cut to correspond to the diameter of the cylindrical pin, thus obtaining a primary processed product 200. The cylindrical or rectangular block 100 is formed to be much larger than the size of the terminal, and thus, more than one primary processed product 200 may be manufactured from a single cylindrical or rectangular block 100, and each is formed longer than the final terminal.
<39> Next, the primary processed product 200 is cut to correspond to the length of the terminal, thus obtaining a secondary processed product 300 having a cylindrical shape, after which the end or side thereof is processed depending on the final use, thereby completing a cylindrical terminal.
<40> In addition, a IJ- or Y-shaped terminal is formed from a sheet or rectangular shape, compared to the cylindrical pin.
<4i> The single crystal block subjected to primary processing and formed into the shape of cylindrical or rectangular block 100 is subjected to secondary processing to form a terminal. In order to manufacture the U- or Y-shaped terminal, the use of a rectangular block is favorable because it reduces the waste of material and is easily processed. Hence, the method of manufacturing the terminal from the rectangular block is described below.
<42> The rectangular block 100 is cut to correspond to the shape of the cross-section of the terminal, for example, an approximate Y shape, thus obtaining a primary processed product 200. This primary processed product 200 is illustrated in FIG. 3. The cross-section thereof may correspond to the shape of the terminal but may be formed extra thick. The primary processed product is cut to correspond to the width of the terminal, thus obtaining a secondary processed product 300, after which the end or side thereof is processed depending on the final use, thereby completing a Y- or U-shaped terminal .
<43> In the course of processing and cutting, electrical discharge machining using a wire cut 10 or water jet machining may be conducted. Further, various manners of cutting and processing may be adopted depending on the needs thereof.
<44> Also, as shown in FIG. 4, the single crystal cylindrical or rectangular block 100 subjected to primary processing is cut into sheets each having a thickness corresponding to the thickness of the terminal, after which the sheets are layered and formed into terminals at the same time. This processing method may be selected from among a die press 20, electrical discharge machining using a wire cut 10, and water jet machining.
<45> Moreover, when the surface of the single crystal terminal thus obtained is coated with a highly conductive metal, preferably, rhodium, it can be prevented from being damaged by external causes such as impact. As well, because unidirectional deposition is performed on the surface of the single crystal, superior electrical and optical properties can be exhibited. <46> The terminal manufactured from the grown single crystal metal as above is attached to the end of a high-quality connector, in particular, the end of a connector having single crystal wires embedded therein, thus improving the quality of electrical signals in the connection with video and audio equipment and so on.

Claims

[CLAIMS] [Claim 1]
<48> A method of manufacturing a single crystal terminal for an electrical connector, comprising:
<49> growing a single crystal from one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel; and
<50> processing the grown single crystal into a shape of a terminal for an electrical connector.
[Claim 2]
<5i> The method according to claim 1, wherein the growing the single crystal is performed by placing one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel in a crystal growth crucible, heating and melting the metals placed in the crystal growth crucible, and growing the single crystal using a metal crystal as a seed through a Czochralski or Bridgman process.
[Claim 3]
<52> The method according to claim 2, wherein the processing the grown single crystal is performed by subjecting the grown single crystal to primary processing into a shape of a cylindrical block or a rectangular block through cutting and then subjecting the cylindrical block or the rectangular block to secondary processing into the shape of the terminal for the electrical connector.
[Claim 4]
<53> The method according to claim 3, wherein the secondary processing is performed by cutting the single crystal subjected to primary processing to correspond to a diameter of the terminal, thus forming a primary processed product, which is then cut to correspond to a length of the terminal, thereby producing a secondary processed product having a cylindrical shape.
[Claim 5]
<54> The method according to claim 4, wherein the secondary processing is performed through electrical discharge machining or water jet machining.
[Claim 6]
<55> The method according to claim 3, wherein the secondary processing is performed by cutting the single crystal subjected to primary processing to correspond to a shape of a cross-section of the terminal, thus forming a primary processed product, which is then cut to correspond to a width of the terminal, thereby producing a secondary processed product.
[Claim 7]
<56> The method according to claim 6, wherein the secondary processing is performed through electrical discharge machining or water jet machining.
[Claim 8]
<57> The method according to claim 3, wherein the secondary processing is performed by cutting the single crystal subjected to primary processing into sheets, layering the sheets, and then simultaneously forming the sheets to terminals.
[Claim 9]
<58> The method according to claim 8, wherein the secondary processing is performed through any one selected from among die pressing, electrical discharge machining, and water jet machining.
[Claim 10]
<59> The method according to any one of claims 1 to 9, wherein a surface of the single crystal terminal is coated with a conductive metal.
[Claim 11]
<60> A single crystal terminal for an electrical connector, manufactured by processing a single crystal grown from one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel into a shape of the single crystal terminal for the electrical connector.
[Claim 12]
<6i> The single crystal terminal according to claim 11, wherein the grown single crystal is formed by placing one or more metals selected from the group consisting of gold, silver, copper, aluminum and nickel in a crystal growth crucible, heating and melting the metals placed in the crystal growth crucible, and growing the single crystal using a metal crystal as a seed through a Czochralski or Bridgman process. [Claim 13]
<62> The single crystal terminal according to claim 11, wherein the terminal is formed by subjecting the grown single crystal to primary processing into a shape of a cylindrical block or a rectangular block through cutting and then subjecting the cylindrical block or the rectangular block to secondary processing into the shape of the terminal for the electrical connector. [Claim 14]
<63> The single crystal terminal according to claim 13, wherein the secondary processing of the single crystal terminal is performed by cutting the single crystal subjected to primary processing to correspond to a diameter of the terminal, thus forming a primary processed product, which is then cut to correspond to a length of the terminal, thereby producing a secondary processed product having a cylindrical shape. [Claim 15]
<64> The single crystal terminal according to claim 11, wherein the secondary processing of the single crystal terminal is performed by cutting the single crystal subjected to primary processing to correspond to a shape of a cross-section of the terminal, thus forming a primary processed product, which is then cut to correspond to a width of the terminal, thereby producing a secondary processed product . [Claim 16]
<65> The single crystal terminal according to claim 11, wherein the secondary processing of the single crystal terminal is performed by cutting the single crystal subjected to primary processing into sheets, layering the sheets, and then simultaneously forming the sheets to terminals. [Claim 17]
<66> The single crystal terminal according to any one of claims 11 to 16, wherein a surface of the single crystal terminal is coated with a conductive mpt -Λ 1
PCT/KR2008/006359 2007-12-03 2008-10-29 Manufacturing method of single crystal terminal for electric connector and the single crystal terminal WO2009072746A2 (en)

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KR101771611B1 (en) * 2014-04-03 2017-08-25 부산대학교 산학협력단 Manufacturing method for single crystal metallic fine wire

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JPS6092011A (en) * 1983-10-21 1985-05-23 Sumitomo Electric Ind Ltd Manufacture of super slender wire conductor
JPH0336225A (en) * 1989-06-30 1991-02-15 Aichi Steel Works Ltd Metallic thin wire having single crystal chain structure and its manufacture
JPH09295895A (en) * 1996-04-26 1997-11-18 Kyocera Corp Single crystal sapphire material containing metallic wire therein, its production and liquid level sensor for metallic melt using the same

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