WO2009072187A1 - 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置 - Google Patents

加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置 Download PDF

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Publication number
WO2009072187A1
WO2009072187A1 PCT/JP2007/073413 JP2007073413W WO2009072187A1 WO 2009072187 A1 WO2009072187 A1 WO 2009072187A1 JP 2007073413 W JP2007073413 W JP 2007073413W WO 2009072187 A1 WO2009072187 A1 WO 2009072187A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing
pressurized gas
pulse control
control processing
gas pulse
Prior art date
Application number
PCT/JP2007/073413
Other languages
English (en)
French (fr)
Inventor
Yoshio Furuta
Naoyoshi Furuta
Original Assignee
Full-Tech Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Full-Tech Co., Ltd. filed Critical Full-Tech Co., Ltd.
Priority to PCT/JP2007/073413 priority Critical patent/WO2009072187A1/ja
Priority to JP2009544522A priority patent/JP5208128B2/ja
Publication of WO2009072187A1 publication Critical patent/WO2009072187A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　本発明の目的は、原料ガスを有効利用して効率的に処理が行え、処理コストの低減を図ることのできる加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置を提供することである。本発明により、予め設定されたガス処理内容に応じて、電磁バルブ１１～１６の開閉を制御して、処理ガスの導入、被処理物１９の加圧ガス処理、大気排気部Ａへの自然排気による低圧力化及び真空排気装置３による真空化を１パルスとして、設定処理内容を完了するために要請されるパルス数だけ被処理物１９を反復的に処理する加圧ガスパルス制御処理を行う。
PCT/JP2007/073413 2007-12-04 2007-12-04 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置 WO2009072187A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/073413 WO2009072187A1 (ja) 2007-12-04 2007-12-04 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置
JP2009544522A JP5208128B2 (ja) 2007-12-04 2007-12-04 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/073413 WO2009072187A1 (ja) 2007-12-04 2007-12-04 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置

Publications (1)

Publication Number Publication Date
WO2009072187A1 true WO2009072187A1 (ja) 2009-06-11

Family

ID=40717373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073413 WO2009072187A1 (ja) 2007-12-04 2007-12-04 加圧ガスパルス制御処理方法及び加圧ガスパルス制御処理装置

Country Status (2)

Country Link
JP (1) JP5208128B2 (ja)
WO (1) WO2009072187A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011219311A (ja) * 2010-04-09 2011-11-04 Sumitomo Electric Ind Ltd 化合物半導体結晶の製造装置および化合物半導体結晶の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657433A (ja) * 1992-08-13 1994-03-01 Tokai Carbon Co Ltd パルスｃｖｉ装置
JPH07106326A (ja) * 1993-10-05 1995-04-21 Nec Corp 半導体装置の製造方法
JP2001220677A (ja) * 2000-02-03 2001-08-14 Denso Corp 薄膜製造方法及び薄膜製造装置
JP2003209103A (ja) * 2002-01-17 2003-07-25 Tokyo Electron Ltd 処理装置および処理方法
JP2006093653A (ja) * 2004-09-22 2006-04-06 Asm Internatl Nv バッチリアクター内でのＴｉＮ膜の堆積
JP2006097136A (ja) * 1994-11-16 2006-04-13 Goodrich Corp Ｃｖｉ／ｃｖｄプロセスに使用するための装置
JP2006124832A (ja) * 2004-09-30 2006-05-18 Nichias Corp 気相成長装置及び気相成長法
JP2007027723A (ja) * 2005-07-11 2007-02-01 Interuniv Micro Electronica Centrum Vzw 層を堆積させるための原子層成長法
JP2007505993A (ja) * 2003-09-16 2007-03-15 東京エレクトロン株式会社 バッチタイプ処理システムにおける順次ガス露出による金属含有膜の形成

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US20040009665A1 (en) * 2002-06-04 2004-01-15 Applied Materials, Inc. Deposition of copper films

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657433A (ja) * 1992-08-13 1994-03-01 Tokai Carbon Co Ltd パルスｃｖｉ装置
JPH07106326A (ja) * 1993-10-05 1995-04-21 Nec Corp 半導体装置の製造方法
JP2006097136A (ja) * 1994-11-16 2006-04-13 Goodrich Corp Ｃｖｉ／ｃｖｄプロセスに使用するための装置
JP2001220677A (ja) * 2000-02-03 2001-08-14 Denso Corp 薄膜製造方法及び薄膜製造装置
JP2003209103A (ja) * 2002-01-17 2003-07-25 Tokyo Electron Ltd 処理装置および処理方法
JP2007505993A (ja) * 2003-09-16 2007-03-15 東京エレクトロン株式会社 バッチタイプ処理システムにおける順次ガス露出による金属含有膜の形成
JP2006093653A (ja) * 2004-09-22 2006-04-06 Asm Internatl Nv バッチリアクター内でのＴｉＮ膜の堆積
JP2006124832A (ja) * 2004-09-30 2006-05-18 Nichias Corp 気相成長装置及び気相成長法
JP2007027723A (ja) * 2005-07-11 2007-02-01 Interuniv Micro Electronica Centrum Vzw 層を堆積させるための原子層成長法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011219311A (ja) * 2010-04-09 2011-11-04 Sumitomo Electric Ind Ltd 化合物半導体結晶の製造装置および化合物半導体結晶の製造方法

Also Published As

Publication number Publication date
JPWO2009072187A1 (ja) 2011-04-21
JP5208128B2 (ja) 2013-06-12

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