WO2009072056A3 - Monolithically integrated crystalline direct-conversion semiconductor detector for detecting incident x-radiation at ultra-fine pitch and method for manufacturing such an x-ray semiconductor detector - Google Patents

Monolithically integrated crystalline direct-conversion semiconductor detector for detecting incident x-radiation at ultra-fine pitch and method for manufacturing such an x-ray semiconductor detector Download PDF

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Publication number
WO2009072056A3
WO2009072056A3 PCT/IB2008/055032 IB2008055032W WO2009072056A3 WO 2009072056 A3 WO2009072056 A3 WO 2009072056A3 IB 2008055032 W IB2008055032 W IB 2008055032W WO 2009072056 A3 WO2009072056 A3 WO 2009072056A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor detector
direct
ultra
semiconductor layer
detector
Prior art date
Application number
PCT/IB2008/055032
Other languages
French (fr)
Other versions
WO2009072056A2 (en
Inventor
Nicolaas J. A. Van Veen
Johannes W. M. Jacobs
Original Assignee
Koninklijke Philips Electronics N. V.
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Filing date
Publication date
Application filed by Koninklijke Philips Electronics N. V. filed Critical Koninklijke Philips Electronics N. V.
Publication of WO2009072056A2 publication Critical patent/WO2009072056A2/en
Publication of WO2009072056A3 publication Critical patent/WO2009072056A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measurement Of Radiation (AREA)

Abstract

The present invention refers to a monolithically integrated crystalline direct- conversion semiconductor detector for detecting X-radiation incident to a detector surface exposed to an irradiation with X-rays at ultra- fine pitch, a fluoroscopic or radiographic X-ray imaging system, 3D rotational angiography device, X-ray C-arc system, fan or cone beam computed tomography imaging device which comprises a monolithically integrated crystalline direct-conversion semiconductor detector as well as to a method for manufacturing such a direct-conversion semiconductor detector. According to the present invention, said direct-conversion semiconductor detector comprises an unstructured semiconductor layer (303) which is made of a crystalline direct-conversion semiconductor material supplied with an unpatterned, non-pixilated electrically conductive layer (304) forming a cathode, wherein said semiconductor layer (303) is glued with its cathode side onto a support substrate (307) with an X-ray transparent intermediate electrically conductive layer (305) made of an anisotropic conductive adhesive film or paste lying in-between. According to the present invention, said semiconductor layer (303) is thinned to a desired thickness of e.g. 300 μm, thereby having a polished surface on an anode-faced side opposite to the side which is attached to said electrically conductive intermediate layer (305). Said surface is contacted at ultra-fine pitch with metal bumps (302a, b) of a bumped CMOS wafer (301) given by a crystalline semiconductor layer, wherein said metal bumps (302a, b) are bonded to the anode-sided surface of the semiconductor layer (303).
PCT/IB2008/055032 2007-12-04 2008-12-01 Monolithically integrated crystalline direct-conversion semiconductor detector for detecting incident x-radiation at ultra-fine pitch and method for manufacturing such an x-ray semiconductor detector WO2009072056A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07122264.0 2007-12-04
EP07122264 2007-12-04

Publications (2)

Publication Number Publication Date
WO2009072056A2 WO2009072056A2 (en) 2009-06-11
WO2009072056A3 true WO2009072056A3 (en) 2009-11-19

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PCT/IB2008/055032 WO2009072056A2 (en) 2007-12-04 2008-12-01 Monolithically integrated crystalline direct-conversion semiconductor detector for detecting incident x-radiation at ultra-fine pitch and method for manufacturing such an x-ray semiconductor detector

Country Status (1)

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WO (1) WO2009072056A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8553834B2 (en) 2010-09-17 2013-10-08 Analog Devices, Inc. Computed tomography detector module
DE102011118684B3 (en) * 2011-11-03 2013-01-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direct-conversion semiconductor detector for detecting e.g. X-ray, has semiconductor device that is stretched by mechanical expansion device and is mechanically clamped and is heated to join with ceramic substrate of base
US9678220B2 (en) 2011-12-19 2017-06-13 Konninklijke Philips N.V. X-ray detector with saturated sensor element estimated photon counting
DE102011089776B4 (en) * 2011-12-23 2015-04-09 Siemens Aktiengesellschaft Detector element, radiation detector, medical device and method for producing such a detector element
EP2665096B1 (en) 2012-05-15 2020-04-22 ams AG A method of wafer-scale integration of semiconductor devices and semiconductor device
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
KR20170097748A (en) * 2014-12-19 2017-08-28 쥐-레이 스위츨란드 에스에이 Systems and methods for particle detection and imaging, including monolithic CMOS integrated pixel detectors and various applications
JP6903662B2 (en) * 2015-08-31 2021-07-14 ジーレイ スイッツァーランド エスアー Photon counting cone beam CT device with monolithic CMOS integrated pixel detector
US10190973B2 (en) 2016-03-31 2019-01-29 Sensor Electronic Technology, Inc. Integrated ultraviolet analyzer
DE102016210935B4 (en) * 2016-06-20 2020-07-09 Siemens Healthcare Gmbh X-ray detector with a non-transparent intermediate layer
JP2020533082A (en) 2017-09-08 2020-11-19 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Spectral (multi-energy) imaging visualization
CN111050652A (en) 2017-09-12 2020-04-21 皇家飞利浦有限公司 Spectral (multi-energy) image data for image-guided applications
WO2019072554A1 (en) 2017-10-09 2019-04-18 Koninklijke Philips N.V. Material-selective adaptive blending of volumetric image data
WO2019096600A1 (en) 2017-11-14 2019-05-23 Koninklijke Philips N.V. Single ct backprojector with one geometry calculation per voxel for multiple different types of projection data
WO2019141769A1 (en) 2018-01-19 2019-07-25 Koninklijke Philips N.V. Scan parameter adaption during a contrast enhanced scan
WO2019149711A1 (en) 2018-01-31 2019-08-08 Koninklijke Philips N.V. Image quality improved virtual non-contrast images generated by a spectral computed tomography (ct) scanner
CN112384827A (en) * 2018-07-12 2021-02-19 深圳帧观德芯科技有限公司 Method of manufacturing a radiation detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344370B1 (en) * 1999-04-19 2002-02-05 Sharp Kabushiki Kaisha Method for fabricating detection element and method for fabricating two-dimensional image detector using detection element
JP2007273881A (en) * 2006-03-31 2007-10-18 Shimadzu Corp Two-dimensional radiation detector and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344370B1 (en) * 1999-04-19 2002-02-05 Sharp Kabushiki Kaisha Method for fabricating detection element and method for fabricating two-dimensional image detector using detection element
JP2007273881A (en) * 2006-03-31 2007-10-18 Shimadzu Corp Two-dimensional radiation detector and manufacturing method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CRISTINZIANI ET AL: "The ATLAS pixel detector", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - A:ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, ELSEVIER, AMSTERDAM, NL, vol. 582, no. 3, 14 November 2007 (2007-11-14), pages 714 - 718, XP022343705, ISSN: 0168-9002 *
HÜGGING, F, ON BEHALF OF THE ATLAS PIXEL COLLABORATION ET AL: "Front-End electronics and integration of ATLAS pixel modules", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - A:ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, ELSEVIER, AMSTERDAM, NL, vol. 549, no. 1-3, 1 September 2005 (2005-09-01), pages 157 - 164, XP025294688, ISSN: 0168-9002, [retrieved on 20050901] *
HÜGGING, FABIAN: "Front-End electronics and integratrion of ATLAS pixel modules", VERTEX, 23 September 2003 (2003-09-23), pages 1 - 36, XP002546148, Retrieved from the Internet <URL:http://hepwww.rl.ac.uk/Vertex03/Talks/FabianHugging.pdf> [retrieved on 20090916] *

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