WO2009066100A2 - Capteurs magnétoélectriques - Google Patents

Capteurs magnétoélectriques Download PDF

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Publication number
WO2009066100A2
WO2009066100A2 PCT/GB2008/051081 GB2008051081W WO2009066100A2 WO 2009066100 A2 WO2009066100 A2 WO 2009066100A2 GB 2008051081 W GB2008051081 W GB 2008051081W WO 2009066100 A2 WO2009066100 A2 WO 2009066100A2
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WO
WIPO (PCT)
Prior art keywords
magnetoelectric
sensor
layers
sensors
temperature
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PCT/GB2008/051081
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English (en)
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WO2009066100A3 (fr
Inventor
Emil Casey Israel
Neil David Mathur
Andrew Peter Matthews
James Floyd Scott
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Cambridge Enterprise Limited
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Publication of WO2009066100A2 publication Critical patent/WO2009066100A2/fr
Publication of WO2009066100A3 publication Critical patent/WO2009066100A3/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/965—Switches controlled by moving an element forming part of the switch
    • H03K17/97—Switches controlled by moving an element forming part of the switch using a magnetic movable element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes

Definitions

  • This invention relates to magnetoelectric sensors and sensing methods.
  • a multilayer capacitor as a magnetoelectric sensor, said capacitor having a laminar multilayer structure comprising a plurality of layers of barium titanate (BaTiO 3 )-based dielectric and first and second interdigitated nickel electrode planes between said layers.
  • multilayer capacitor have a structure that in the present context is novel and makes them advantageous for use as a magnetoelectric sensor. More particularly the multilayer structure in which a plurality of layers are electrically-connected in parallel provides an arrangement which is useful for practical applications, even when what is detected is an output voltage. This is because in practical applications the magneto-electric sensor drives a load and thus the ability to deliver more current to the load provides an enhanced sensing capability. In embodiments this enables, for example, a magnetically-powered magnetic sensing system/device.
  • nickel and barium titanate are surprisingly effective - these would not normally be considered the materials of first choice because, for example, nickel is not particularly strongly magnetostrictive and because there is a range of materials which have a substantially greater piezoelectric response than barium titanate.
  • the nickel nor, in particular, the barium titanate are pure in a multilayer capacitor; typically the barium titanate will include between 5-10% additives, for example plasticizer to facilitate processing during manufacture and/or materials to reduce a temperature coefficient of capacitance of the capacitor, and so forth).
  • the piezoelectric material barium titanate
  • this bounding material substantially lacks magnetostrictive (nickel) electrodes to either side. It might be thought that this would be undesirable since, potentially, the presence of material which was not under the influence of a magnetostrictive effect could reduce the overall response of the sensor. However in practice it is useful in providing mechanical stability for the sensor over time, broadly speaking helping to hold the sensor together.
  • the capacitor is of the type which has one or more sets of floating electrodes partially overlapping electrodes connected to connections to the multilayer capacitor.
  • the invention further provides a magnetic field sensor configured to use a multilayer capacitor, as described above, as a magnetoelectric sensor.
  • a magnetic field sensor is configured to use the output from a multilayer capacitor of the type described above to provide a signal for sensing a magnetic field.
  • the signal may be used in a range of different ways including, for example, to provide an indication of a sensed field.
  • the invention provides a magnetoelectric sensor, the sensor comprising: first and second electrical connections; a plurality of layers of magnetostrictive metal, a first set of said layers of said magnetostrictive metal being connected to said first electrode connection and a second set of said layers of said magnetostrictive metal being connected to said second electrode connection, said first and second sets of layers of magnetostrictive metal being interdigitated; and a plurality of layers of piezoelectric material between said layers of magnetostrictive material; wherein a said layer of piezoelectric material and layers of said magnetostrictive metal to either side of the said layer of piezoelectric material define a magnetoelectric sensing element; and wherein a plurality of said magnetoelectric sensing elements are connected electrically in parallel such that a change in magnetic field is able to cause a current to flow generated by said plurality of said layers of piezoelectric material.
  • layers of magnetostrictive material alternate with layers of piezoelectric material.
  • a magnetic field causes strain in the magnetostrictive material which is transferred, by mechanical coupling, to the piezoelectric material, which in turn generates an electric field causing a current to flow through any load connected to the sensor.
  • first and second sets of layers of magnetostrictive metal are interdigitated, depending upon the configuration of the electrodes, electrodes making a connection to different (opposite) external electrodes of the sensor need not themselves overlap since there may be one or more sets of intermediate, floating electrodes within the interdigitated metal layers.
  • some preferred embodiments of the sensor include one or more floating electrodes, these preferably only partially overlapping the electrodes connected to electrical contacts to the sensor from which said current is drawn.
  • a region in which the current is generated is bounded on one or more faces by piezoelectric material in which substantially no current is generated.
  • Magnetostrictive materials which may be employed include cobalt, iron, nickel, Permalloy, or a related nickel-iron magnetic alloy. Some particularly preferred magnetostrictive materials comprise rare earth alloys; of these Terfenol-D is particularly advantageous having very high magnetostriction (Terfenol-D comprises an alloy of Terbium, Dysprosium and Iron, the name being a contraction of the names of these constituents). Some particularly piezoelectric materials include the following and doped versions thereof: lead titanate, lead zirconate titanate (PZT), barium titanate, barium strontium titanate (BST) and lead magnesium niobate-lead titanate (PMN-PT).
  • PZT lead zirconate titanate
  • BST barium titanate
  • PMN-PT lead magnesium niobate-lead titanate
  • a magnetoelectric sensor as described above may be incorporated into a magnetic field sensing device powered by current from the sensor.
  • the device may comprise an indicator to provide an indication of a change in a sensed magnetic field, powered by the sensor.
  • the indictor may comprise, for example, a very low voltage lamp (for example a lamp powered by a voltage of less than 1 volt) and/or an audible alert and/or a wireless transmitter, or the like.
  • a very low voltage lamp for example a lamp powered by a voltage of less than 1 volt
  • an audible alert and/or a wireless transmitter or the like.
  • Such a device may need no permanent internal power source such as a battery.
  • the invention also provides a method of sensing a magnetic field using a magnetoelectric sensor as described above.
  • a sensor as described above is particularly useful for generating a current, nonetheless it may also be used to generate a voltage in situations in which substantially no current flows, for example when driving the gate of a field effect transistor to sense a magnetic field.
  • the sensor may be employed in either a "voltage-output” mode or a "current-output” mode.
  • Magnetoelectric sensors as described above can exhibit a strong temperature dependence which can mask the signal generated by a changing magnetic field. It would therefore be useful to provide temperature compensation for such a sensor.
  • a temperature- compensated magnetoelectric sensor system comprising: first and second sensor system electrical connections; first and second magnetoelectric sensors each having respective first and second electrodes, each of said first and second magnetoelectric sensors having a temperature response in which, with an increase in temperature, a voltage on said first electrode becomes more positive with respect to said second electrode, each of said first and second magnetoelectric sensors further having an anisotropic magnetic response in which a change in voltage across said first and second electrodes with a change in sensed magnetic field is greater when the sensor is in a first orientation with respect to said magnetic field than when the sensor is in a second orientation; and wherein, in said temperature-compensated magnetoelectric sensor system, one of said first and second magnetoelectric sensors is in said first orientation and the other of said first and second magnetoelectric sensors is in said second orientation, and wherein said electrodes of said first and second magnetoelectric sensors are electrically connected to one another between said sensor system electrical connections such that with an increase in said temperature an increase in
  • a magnetoelectric sensor used in the sensor system is as described above.
  • the first and second magnetoelectric sensors may be electrically connected to one another either in series or in parallel. In both cases the sensors are connected to one another so that the effects of temperature change on one opposes the effect of the same temperature change on the other.
  • the temperature responses of the two magnetoelectric sensors are substantially matched to one another.
  • one of the orientations corresponds to a magnetic so-called easy axis of the sensor, more particularly of a magnetic material of the sensor, and the other orientation corresponds to a hard magnet axis of the sensor.
  • the first and second sensor orientations are substantially perpendicular to one another.
  • the first and second magnetoelectric sensors have oppositely directed electrical polarisation or at least oppositely directed components of electrical polarisation. The skilled person will appreciate that in embodiments of a sensor system and plurality of series and/or parallel coupled first and second magnetoelectric sensors may be employed.
  • the invention provides a keyboard, keypad, button or switch incorporating a magnetoelectric sensor or sensor system as described above.
  • the invention provides a keyboard or keypad comprising a plurality of pressure-activated buttons or keys, each having a magnet and an associated passive magnetoelectric effect sensor, and wherein when a said button or key is pressed the respective magnet approaches the associated passive magnetoelectric effect sensor such that the sensor produces a voltage by magnetostriction of the sensor.
  • the sensors employed comprise temperature-compensated sensors, more particularly each sensor comprising a pair of anisotropic magnetoelectric sensing devices electrically connected such that they provide opposing (voltage or current) signals with a change in temperature.
  • each magnet is attached to a button or key or to a membrane supporting a button or key and the magnetoelectric effect sensors are mounted on a substrate below the buttons or keys.
  • easy after poling in E ⁇ 102kV/cm, and depolarizing - the remnant MLC polarization P x (T) approximately tracks the values of I F(0.5 T, 7)
  • measured after poling, and both quantities tend to zero near the Curie temperature Tc 393 K of pure BaTiO 3 ;
  • Figures 2a and 2b show, respectively, an example of a 1206 surface mount multilayer capacitor and a scanning electron micrograph of a cross-section through a multilayer capacitor;
  • Figures 3 a and 3 b show, respectively, a schematic diagram of a magneto-electric sensor according to an embodiment of the invention, and an equivalent electrical circuit for the sensor of Figure 3 a;
  • Figure 4 shows a schematic diagram of a magnetoelectric sensor system according to an embodiment of the invention, with two MLCs as the MR elements - the MLCs, whose orientations differ by 90°, should be poled in opposite senses prior to electrical connection;
  • Figure 5 shows the magnetization M of a single MLC, as a function of applied magnetic field H, for easy in-plane (solid) and hard normal (dashed) directions with respect to the Ni-based planar electrodes; data were taken using a vibrating sample magnetometer, and M was calculated using the total electrode volume;
  • Figure 7 shows the ME response V of a sensor comprising two MLCs (solid, middle) to an optimally oriented H (see description later) swept over a period of ⁇ 100 s; the corresponding simulation (dashed, middle) is based on the easy and hard axis ME data for a single MLC, reproduced here (solid and dashed, lower & upper) from Fig.
  • Figure 9 shows use of a magnetoelectric sensor according to an embodiment of the invention in a keyboard or keypad.
  • MLCs multilayer capacitors
  • Ni is replacing Ag/Pd as the electrode material in order to cut costs.
  • the MLC studied here has an industry standard footprint: "1206" (0.120 x 0.060) inch 2 , 3.05 x 1.52 mm 2 ).
  • Figure Ib shows that at room temperature, the MLC develops a voltage V across its terminals (+ and -, Figure Ia) in an applied field H.
  • the magnitude of this direct magnetoelectric response V(H) approximately tracks M(H), reflecting the role of the magnetostriction of Ni in the strain-mediated coupling.
  • the input per unit output sensitivity dV/dH 7.OxIO "6 V/Oe is largest for ⁇ oH ⁇ 0.1 T along an easy axis, such that 0.1 T generates 7mV.
  • the MLC is in effect less sensitive than a SQUID, but operates at room temperature and only costs one cent.
  • Figure Ic shows V(O.5 T) with H [[ easy after different electrical poling histories, at selected temperatures. The weak temperature dependence around room temperature is attractive for applications.
  • the observed dependence of V(0.5 T) on both poling history and remnant polarization P 1 ( Figure Ic) reflects the fact that the dielectric of the MLC is in fact ferroelectric. Here, ferroelectricity breaks device symmetry and guarantees the piezoelectricity required for the strain-mediated direct coupling. Compared with pure BaTiO 3 , Pr is suppressed but the Curie temperature is similar ( Figure Ic).
  • the converse magnetoelectric coupling constant ⁇ od ⁇ d/dE 3.4 x 10 ⁇ 10 s/m for this specific measurement of the MLC is however relatively small. Subsequent removals and reversals of E produce further switches in M.
  • MLCs are inadvertently well-designed magnetoelectric transducers for three reasons.
  • Figure 2a shows a photograph of a 1206-style surface mount multilayer capacitor resting on a one-cent coin illustrating a comparison between the two in terms of both size and cost.
  • Figure 2b shows a scanning electron micrograph of a vertical cross- section through an example multilayer capacitor with floating electrodes (in Figure 2b the nickel electrodes are the dark lines against the lighter dielectric material).
  • the structure of Figure 2b has, effectively, seven magnetoelectric sensor layers but more typically there is a much larger number of layers, for example greater than 50 or greater than 100 layers (in two particular examples, 80 and 290 layers).
  • FIG. 3a shows a schematic diagram of an embodiment of a magneto-electric sensor 300 according to the invention.
  • the sensor has first and second electrical connections 302a, b to a plurality of layers of magnetostrictive metal 304, electrodes within layers 304a being connected to electrical connection 302a and electrodes within layers 304b being connected to electrical connection 302b.
  • the layers of magnetostrictive metal include electrodes 306a, b which are directly connected to electrical connections 302a, b respectively, and one or more sets of floating electrodes 308.
  • Layers of piezoelectric material 310 are disposed between the layers of magnetostrictive metal.
  • the illustrated embodiment which includes floating electrodes
  • current is generated substantially in regions 312 where the electrodes (including floating electrodes) coupled to the respective first and second electrical connections 302a, b overlap, thus breaking up active regions within the device.
  • one or more additional layers of piezoelectric material 314 are included outside the outermost layers of magnetostrictive metal to help provide mechanical stability to the sensor.
  • Figure 3b illustrates, schematically, that the arrangement of Figure 3a effectively comprises a plurality of magnetoelectric sensors connected electrically in parallel.
  • the skilled person will understand, however, that multiple sensors of the type illustrated in Figure 3a may additionally be connected in series, for increased voltage.
  • MLC sensitivity dV/dH may be significantly improved via materials selection (J. Ryu, S. Priya, K. Uchino, H.E. Kim, Journal of Electroceramics 8, 107 (Aug, 2002)) and/or wiring the capacitor plates in series.
  • the direct effect in MLCs may be exploited for energy harvesting, and for magnetic-field sensors that do not require electrical power, for example for underwater, space, health and safety, in-vivo, or toy applications.
  • MLC magnetoelectric
  • an applied magnetic field H deforms that magnetostrictive material, and the transfer of strain to the piezoelectric material produces an electrical response that is paramaterized as a change of polarisation P, electric field E or voltage V.
  • Ferroelectrics are used in practice as these have the largest piezoelectric responses, but unfortunately the can also display a strong temperature dependence due to pyroelectricity.
  • primary pyroelectricity may be substantially eliminated by electroding two ferroelectric layers with suitably oriented polarizations.
  • this does not eliminate secondary pyroelectric effects associated with the differential thermal expansion of the two materials in the heterostructure.
  • Preferred embodiments of the sensor use two matched, preferably substantially identical ME elements that display an anisotropic ME response.
  • the ME elements display piezoelectricity by virtue of displaying ferroelectricity. If the two ME elements were constrained to be at the same temperature, and were electrically connected in parallel with oppositely oriented polarizations, then the cancellation of pyroelectric effects would render the voltage across the elements independent of temperature. If the spatial orientation of the elements were identical, then ME effects would also cancel. But by selecting different orientations, the net ME response is reduced, rather than cancelled.
  • a series arrangement of oppositely poled ME elements can offer ME voltage addition as well as temperature cancellation, but the charge generated is halved with respect to the parallel arrangement on which we focus here.
  • the solid and dashed lines as shown in Fig. 6 illustrate an anisotropic response of a single magnetoelectric sensor element, illustrating a relatively large response (with a sharp drop to zero at low field) when the magnetic field is applied in-plane, along an easy axis, and illustrating a small response of opposite polarity (positive) when the field is applied perpendicular to this plane (the plane in which the electrodes lie).
  • Figure 7 shows (middle curve) the result when two magnetoelectric elements are connected together (in this example, in parallel), the two elements having different orientations, one perpendicular to the other: because the response of a magnetoelectric element is anisotropic the outputs from the two magnetoelectric elements do not cancel each other out but instead there is, in effect, an average output response from the sensor.
  • the middle curves (in a vertical direction) in Figure 7 are in effect an average of the top and bottom curves (strictly speaking an average of the magnitudes of these curves);
  • the middle curve with the dashed line represents an average of the lower, solid curve and the upper, dashed curve and, as can be seen, closely approximates the actual sensor output illustrated by the middle curve with the solid line.
  • the two connected magnetoelectric elements of Fig.4 are poled in opposite directions - that is the plates of one ME element which were connected to, say, a positive voltage terminal during the poling process are connected to the plates of the second ME element which were connected to a negative terminal during the poling process.
  • the effects of any temperature changes - which act on both the ME elements - cancel each other out.
  • the two ME elements had the same orientation, their magnetoelectric effects would also substantially cancel out.
  • the response of the ME elements is anisotropic and therefore by providing one of the ME elements in a different orientation to the other there is incomplete cancellation of the magnetoelectric response to a magnetic field whilst retaining substantially complete temperature cancellation.
  • a field applied along, say, the easy axis of one of the ME elements will be applied along the hard axis of the other ME element, resulting the average output response shown Fig. 7.
  • a high degree of anisotropy is preferable and, as can be seen from Fig. 7, the response to a field in the hard direction is very small so that the effect of averaging is to approximately halve the response obtained from a field parallel to the easy (in-plane) direction.
  • Substantial cancellation of the effect of a temperature change can also be achieved by connecting the ME elements in series, when they are, in effect, connected in opposition to one another - in other words, the series connection between the two ME elements is formed by connecting together terminals poled using the same voltage polarity (either positive or negative).
  • both the ME elements are electrically poled using a relatively high electric field (for the case of a multilayer capacitor, greater than the manufacturers intended/specified maximum voltage).
  • the ferroelectric material used in preferred ME sensing elements retains an remnant polarisation after this poling procedure. The skilled person will understand that although electrical poling of the material is convenient it is not essential - there are other mechanisms which can be employed to break the symmetry of an ME element.
  • heating reduces polarisation, that is the Ti 4+ cations in the BaTiO 3 move back towards the centres of their unit cells. This causes the electrode plates that were poled positive (and pushed the Ti 4+ cations away) to develop a voltage that is positive with respect to the other plates.
  • MLCs with magnetostrictive Ni-based electrodes and piezoelectric BaTiO 3 -based dielectric layers (Fig. 1).
  • Such MLCs are inexpensive standard electronic components that function as magnetic-field sensors when poled to due strain-mediated ME coupling.
  • the MLCs used here (1 ⁇ F, AVX Corp., model 12063C105KAT) differ slightly from those described above, and have 2 ⁇ m thick Ni- based planar electrodes spaced by 22 ⁇ m thick BaTiO 3 -based dielectric layers, forming 108 capacitors in parallel, each of area 4.5 mm 2 . All MLCs were poled in 250 V, and all electrical measurements were performed using a Keithley 2410 sourcemeter with internal resistance ⁇ 10 10 ⁇ .
  • the MLC displays magnetic shape anisotropy (Fig. 5) and therefore an anisotropic ME response V(H) (Fig. 6).
  • V(T) is a strong function of T at any H (see later).
  • the ME response of the sensor comprising two MLCs (Fig. 4) is maximal when H lies parallel to the easy axis of one MLC and the hard axis of the other, i.e. along one of two directions.
  • the measured output of this sensor configuration is presented in Fig.
  • the ME response of the sensor comprising two MLCs is maximal when H lies parallel to the easy axis of one MLC and the hard axis of the other, i.e. along one of two directions.
  • the measured output of this sensor configuration is presented in Fig.7, and is seen to correspond closely to the expected response of [F(H eaS y)-F(Hhaid]/2, where V(H easy ) and F(Hh 3 Td) ar e the easy and hard axis responses of a single MLC (Fig. 6).
  • the sensor averages the magnitudes of the easy and hard axis ME responses of a single MLC.
  • FIGS 9a and 9b show an embodiment of a keyboard or keypad 900 employing a magnetoelectric sensor 902, preferably a temperature- compensated sensor, as described above.
  • Each key 904 of the keypad comprises a small permanent magnet 906 mounted on a membrane 908 or the like which, when depressed as shown in Figure 9b, approaches the magnetoelectric sensor 902. The sensor then generates a voltage provided as an output from the keypad via an electrical connection (not shown).
  • Such an arrangement can provide an inexpensive and reliable keypad, for example for a consumer electronic device such as a mobile phone or computer, or for, for example, an environment such an industrial environment where conditions are challenging for example because of dust or chemicals/contaminants or fluids, for example water, in particular where high reliability is desirable.
  • One advantage of embodiments of a keyboard or keypad of the type shown in Figure 9 is that it can readily be made waterproof.

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  • Chemical & Material Sciences (AREA)
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Abstract

Cette invention porte sur des capteurs magnétoélectriques et sur des procédés de détection. Le capteur magnétoélectrique comprend : des première et seconde connexions électriques ; une pluralité de couches de métal magnétostrictif, un premier ensemble desdites couches dudit métal magnétostrictif étant connecté à ladite première connexion d'électrode et un second ensemble desdites couches dudit métal magnétostrictif étant connecté à la seconde connexion d'électrode, lesdits premier et second ensembles de couches de métal magnétostrictif étant interdigités ; et une pluralité de couches de matériau piézoélectrique entre lesdites couches de matériau magnétostrictif ; une couche précitée de matériau piézoélectrique et des couches dudit métal magnétostrictif de chaque côté de ladite couche de matériau piézoélectrique définissant un élément de détection magnétoélectrique ; et une pluralité desdits éléments de détection magnétoélectrique étant connectés électriquement en parallèle de sorte qu'une variation de champ magnétique est de nature à provoquer la circulation d'un courant généré par ladite pluralité desdites couches de matériau piézoélectrique.
PCT/GB2008/051081 2007-11-19 2008-11-18 Capteurs magnétoélectriques WO2009066100A2 (fr)

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GB0722551A GB0722551D0 (en) 2007-11-19 2007-11-19 Magnetoelectric sensors

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Cited By (4)

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US7804229B2 (en) * 2006-06-22 2010-09-28 Cooper Tire & Rubber Company Magnetostrictive / piezo remote power generation, battery and method
WO2016037762A1 (fr) * 2014-09-11 2016-03-17 Sicpa Holding Sa Générateur pyroélectrique
RU193362U1 (ru) * 2019-08-08 2019-10-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "МИРЭА - Российский технологический университет" Планарный магнитоэлектрический датчик магнитного поля
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CN115189112B (zh) * 2022-07-08 2024-05-14 郑州轻工业大学 二分式六线-三端口磁电功率分割器及其测量装置

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US7808159B2 (en) * 2006-06-22 2010-10-05 Cooper Tire & Rubber Company Magnetostrictive / piezo remote power generation, battery and method
WO2016037762A1 (fr) * 2014-09-11 2016-03-17 Sicpa Holding Sa Générateur pyroélectrique
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