WO2009058148A1 - Mram testing - Google Patents
Mram testing Download PDFInfo
- Publication number
- WO2009058148A1 WO2009058148A1 PCT/US2007/083307 US2007083307W WO2009058148A1 WO 2009058148 A1 WO2009058148 A1 WO 2009058148A1 US 2007083307 W US2007083307 W US 2007083307W WO 2009058148 A1 WO2009058148 A1 WO 2009058148A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- neighbor
- cell
- state
- toggling
- predetermined sequence
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Definitions
- This disclosure relates generally to MRAMs, and more specifically, to techniques for testing MRAMs.
- MRAMs Magnetoresistive random access memories
- One approach to MRAMs that has been effective is to operate the MRAM as a toggle memory. In such case the state of an MRAM cell is provided at a desired logic state by either leaving it in its present state because the present state is the desired state or toggling the memory state to the opposite logic state of the present logic state.
- Operating the MRAM as a toggle memory has been found to provide more reliable operation than an approach that directly writes the state of the cell. Directly writing the logic state of MRAM cell has been found to cause problems with write disturb by too frequently causing other cells along the bit line to also be incorrectly written to the same logic state.
- Toggle writing has been found to be far less susceptible to write disturb than direct writing.
- the logic state of the cell must be read to determine if a toggle operation should be performed. This adds to the time for a write operation, but even with the extra read operation, the write operation is in the order of tens of nanoseconds whereas typical floating gate non-volatile memories (NVMs) require in the order of milliseconds for write.
- NVMs floating gate non-volatile memories
- FIG. 1 is a circuit diagram of a portion of an MRAM
- FIG. 2 is a block diagram of a system using the MRAM of FIG. 1 ;
- FIG. 3 is a block diagram of a portion of the system of FIG. 2;
- FIG. 4 is more detail of a portion of the block diagram shown in FIG. 3;
- FIG. 5 is a flow chart describing a method of testing an MRAM according to one embodiment.
- An MRAM is tested for write disturb issues by testing each cell for write disturb by consecutively toggling adjacent neighbor cells of the cell being tested.
- a write disturb has been found to sometimes occur when toggling an adjacent cell on the same word line followed by togging an adjacent cell on the same bit line. This type of testing can be made more thorough by also toggling other adjacent memory cells as well as repeating the toggling of the neighbor cells.
- FIG. 1 Shown in FIG. 1 is a portion of a memory 10 comprising an MRAM cell 12, an MRAM cell 14, an MRAM cell 16, an MRAM cell 18, an MRAM cell 20, an MRAM cell 22, an MRAM cell 24, an MRAM cell 26, and an MRAM cell 28.
- MRAM cells 22, 14, and 24 are along a row coupled to a word line 30.
- MRAM cells 20, 12, and 16 are along a row coupled to a word line 32.
- MRAM cells 26, 18, and 28 are along a row coupled to a word line 34.
- MRAM cells 22, 20, and 26 are along a column coupled to a bit line 36.
- MRAM cells 14, 12, and 18 are along a column coupled to a bit line 38.
- MRAM cells 24, 16, and 28 are along a column coupled to a bit line 40.
- MRAM cells 14 and 18 are neighbor cells to MRAM cell 12 because they are adjacent to MRAM cell 12 and are along the same bit line as MRAM cell 12.
- MRAM cells 20 and 16 are also neighbor cells to MRAM cell 12 because they are adjacent to MRAM cell 12 and are along the same word line as MRAM cell 12.
- MRAM cells 22, 24, 26, and 28 are not considered neighbor cells to MRAM cell 12 because they are not on either the same word line or the same bit line as MRAM cell 12.
- FIG. 2 Shown in FIG. 2 is a system 50 comprising memory 10, a built-in self-test (BIST) circuit 52, a processor 54, modules 56, an interface circuit 58, and a bus 60.
- Memory 10 is coupled to BIST circuit 52, interface circuit 58, and bus 60.
- BIST circuit 52 is further coupled to interface circuit 58.
- Processor 54 is coupled to interface circuit 58 and bus 60.
- Modules 56 are coupled to processor 54, interface circuit 58, and bus 60.
- Interface circuit 58 additionally has an input/output for coupling externally to system 50, which may be a single integrated circuit.
- Modules 56 may be a plurality of circuit functions such as peripheral control, memory, or another processor.
- BIST circuit 52 provides testing of memory 10 that includes testing of individual memory cells by consecutive toggling of neighbor cells. This is provided responsive to an external source through interface circuit 58.
- Processor 54 otherwise controls memory 10 and to at least some extent, modules 56.
- System 50 may include other circuits as well as those shown. Testing of memory 10 may also be performed under the control of processor 54 or through interface 58.
- BIST circuit 52 comprises an other BIST logic 62, a configuration storage circuitry 64, and a force toggle logic circuit 66.
- Memory 10 comprises a memory controller 68 and a memory array 70.
- Other BIST logic 62 and force toggle logic circuit 66 direct the testing of the memory array 70 via the memory controller 68 based on an input from configuration storage circuitry 64 that includes a sequence or sequences of toggling certain of the neighbors of the CUT.
- a separate signal, a force toggle indicator is generated by force toggle logic circuit 66 to indicate that a forced toggle is to be performed.
- a force toggle is one that ensures a toggle of the cell occurs regardless of the content of the cell.
- Contents of configuration storage circuitry 64 are loaded through other BIST logic 62.
- Configuration storage circuitry 64 may be a register that provides information concerning the CUT and how the CUT is to be tested.
- Configuration storage circuitry 64 has a field 72, a field 74, a field 76, a field 78, a field 80, and a field 82.
- Field 76 is the location, which may be an address, of a neighbor 0.
- Field 78 is the location, which may be an address, of a neighbor 1.
- Field 80 is the location, which may be an address, of a neighbor 2.
- Field 82 is the location, which may be an address, of a neighbor 3.
- fields 76-82 would identify the locations of memory cells14, 16, 18, and 20 in the order desired for the test of the CUT.
- Field 72 identifies the last field of fields 76-82 to be used which has the affect of identifying which of the neighbors is the last neighbor to be toggled in the sequence. For example the sequence may only include two neighbors and the last one would be the second one toggled in the sequence. Even if only two are in the sequence, the sequence may be performed multiple times.
- Field 74 indicates the count of the additional times beyond the first time that the sequence of toggling the neighbors will be performed.
- the fields in configuration storage circuitry 64 can be organized in any order relative to each other, one embodiment of which is shown in FIG. 4.
- FIG. 5 Shown in FIG. 5 is a flow diagram 100 for performing the test of CUT, which may be MRAM cell 12.
- a CUT is written to a known state which is achieved with a read followed by a toggle if needed.
- a read of the CUT is performed in step 104 to verify the write in step 102.
- Steps 102 and 104 are performed under the direction of other BIST logic 62 as are last steps 128 and 130.
- the other steps are under the direction of configuration storage circuitry 64 and force toggle logic circuit 66.
- step 106 the neighbor identified in field 76 is toggled. For MRAM cell 12 this could be any one of memory cells 14, 16, 18, and 20.
- step 108 a determination is made if the neighbor toggled is the last neighbor identified in field 72. If it is, in step 110, a determination is made if the toggle is to be repeated based on field 74. If there is a repeat left to perform, the next step is step 106. The letter "A" is used to indicate a return to step 106. If in step 110 it is determined that there are no repeats left to be performed, then in step 128 the CUT is read to verify that the CUT has not changed state and thus there has not been a write disturb. Any time step 128 is performed, a next cell may be selected in step 130 as the next CUT and the process would thus begin again with step 102 with the newly selected CUT.
- step 108 If in step 108, it is determined that the neighbor toggled in step 106 was not the last neighbor to be toggled, then the next step is to toggle the neighbor identified in field 78. This may also identify any of the four neighbors of the CUT. Even though it is shown as neighbor 1 in step 112, it may be the same as the neighbor identified in field 76 and toggled in step 106. After neighbor 1 has been toggled, a decision is made in step 114 if that is the last neighbor identified in field 72. If it is the last neighbor, a decision is made in step 116 if there are additional repeats that have not yet been performed based on field 74. If not, then in step 128 the CUT is read to determine if there has been a write disturb.
- step 106 If there are additional repeats yet to be performed, then the next step is step 106. If neighbor 1 is not the last neighbor, then the neighbor, neighbor 2, identified in field 80 is toggled in step 118. This also may be any of the four neighbors including either neighbor 0 or neighbor 1. In step 120, it is determined if neighbor 2 is the last neighbor. If it is, a decision is made in step 122 if there are any additional repeats based on field 74. If there are no additional repeats, then in step 128 the CUT is read to determine if there was a write disturb. If there is an additional repeat, then the next step is step 106. If neighbor 2 is not the last neighbor, then the neighbor identified in field 82 as neighbor 3 is toggled in step 124.
- neighbor 3 may be any of the four neighbors of the CUT.
- a decision is made in step 126 if there is another repeat left to perform based on field 74. If there is another repeat to be performed, then the next step is step 106 and the process continues. It there are no other repeats to be performed, then in step 128 the CUT is read to determine if there has been a write disturb.
- Flow chart 100 thus shows that a variety of options for toggling the neighbors is available.
- One example is simply to toggle two neighbors in which one is on the same column as the CUT and the other is on the same row as the CUT.
- This two cell sequence can be repeated. In fact it may be repeated the number of times as indicated in field 74. In such case a column and a row neighbor would be consecutively toggled and then repeated as desired. Also the same neighbor may be toggled consecutively. This could be achieved by identifying the same neighbor in both fields 76 and 78. This may be repeated as desired as well and/or adding another cell or cells to the sequence.
- this flow chart may be used for providing testing to identify if a cell is reliable, it may be used to investigate the different combinations of toggling that provides the most risk for causing write disturb. This could be useful in identifying future margin tests as well as identifying potential areas of improvement in establishing MRAM as being reliable.
- the MRAM cells are drawn as ellipses in which the long axis is at a 45 degree angle to the rows and columns.
- the most significant problem with write disturb is with the two neighbor cells that have their long axes aligned.
- the most dangerous combination for write disturb is consecutive toggles of MRAM cells 20 and 14 or cells 16 and 18.
- the method includes selecting a cell of the plurality of cells to be tested.
- the method further includes writing a first state to the cell.
- the method further includes reading from the cell to verify the first state.
- the method further includes consecutively toggling a state of a first neighbor of the cell and a state of a second neighbor of the cell according to a predetermined sequence of neighbors, wherein the first neighbor of the cell is adjacent to the cell and the second neighbor of the cell is adjacent to the cell, and wherein the predetermined sequence of neighbors indicates an order in which to consecutively toggle the state of the first neighbor and the state of the second neighbor.
- the method further includes, after the step of consecutively toggling, reading from the cell to determine if a change from the first state to a second state occurred.
- the method may be further characterized by a read of the first neighbor not being performed immediately prior to the toggling of the state of the first neighbor and a read of the second neighbor not being performed immediately prior to the toggling of the state of the second neighbor.
- the method may further include obtaining the predetermined sequence of neighbors from configuration storage circuitry.
- the method may be further characterized by the configuration storage circuitry further indicating a last neighbor of the predetermined sequence of neighbors.
- the method may be further characterized by the configuration storage circuitry comprising a repeat indicator used to determine a number of times to repeat the predetermined sequence of neighbors, wherein, prior to the reading from the cell to determine if the change from the first state to the second state occurred, repeating the consecutive toggling of the first and second neighbors according to the predetermined sequence of neighbors the number of times determined using the repeat indicator.
- the method may be further characterized by the first neighbor being along a same bitline as the cell and the second neighbor being along a same wordline as the cell.
- the method may be further characterized by the predetermined sequence of neighbors indicating that the first neighbor follows the second neighbor, and wherein the consecutively toggling the state of the first neighbor of the cell and the state of the second neighbor of the cell is performed such that the state of the second neighbor is toggled prior to the state of the first neighbor.
- a data processing system having an MRAM array having a plurality of cells, an MRAM controller coupled to the MRAM array, and testing logic.
- the testing logic is coupled to the MRAM controller and comprises configuration storage circuitry which stores a predetermined sequence of at least two neighbor locations, wherein, for each cell of the plurality of cells being tested, the testing logic consecutively toggles a state of neighbors of the cell being tested as indicated by the at least two neighbor locations of the predetermined sequence.
- the data processing system may be further characterized by the MRAM array, the MRAM controller, and the testing logic being located on a single integrated circuit.
- the data processing system may be further characterized by the configuration storage circuitry storing a last neighbor indicator to indicate an end of the predetermined sequence.
- the data processing system may be further characterized by the configuration storage circuitry storing a repeat indicator which indicates a number of times the testing logic consecutively toggles a sequence of the at least two neighbors of the cell being tested indicated by the predetermined sequence.
- the data processing system may be further characterized by the toggling not being preformed in response to a read of the neighbor being toggled.
- the method includes selecting a cell to be tested from the plurality of cells.
- the method further includes writing a first state to the cell.
- the method further includes reading from the cell to verify the first state.
- the method further includes determining a first neighbor of the cell as indicated by a predetermined sequence of neighbors, wherein the first neighbor is adjacent to the cell.
- the method further includes toggling a state of the first neighbor of the cell, wherein the toggling of the state of the first neighbor is not performed in response to a read of the first neighbor.
- the method further includes determining a second neighbor of the cell as indicated by the predetermined sequence of neighbors, wherein the second neighbor is adjacent to the cell.
- the method further includes toggling a state of the second neighbor of the cell, wherein the toggling of the state of the second neighbor is not performed in response to a read of the second neighbor.
- the method further includes, after the toggling of the state of the second neighbor, reading from the cell to determine if a change from the first state to a second state occurred.
- the method further includes, after the reading from the cell to determine if the change from the first state to the second state occurred, selecting a next cell of the plurality of cells to be tested.
- the method may further comprise, after the toggling of the state of the first neighbor of the cell, determining that the first neighbor is not a last neighbor of the predetermined sequence.
- the method may further comprise, after the toggling of the state of the second neighbor of the cell and prior to the reading from the cell to determine if the change from the first state to the second state occurred, determining that the second neighbor is the last neighbor of the predetermined sequence.
- the method may further comprise, after the determining that the second neighbor is the last neighbor of the predetermined sequence, determining if a repeat of the predetermined sequence is indicated.
- the method may further comprise, after the selecting the next cell, writing a third state to the next cell; reading from the next cell to verify the third state; determining a third neighbor of the next cell as indicated by the predetermined sequence of neighbors, wherein the third neighbor is adjacent to the next cell; toggling a state of the third neighbor of the next cell, wherein the toggling of the state of the third neighbor of the next cell is not performed in response to a read of the third neighbor of the next cell; determining a fourth neighbor of the next cell as indicated by the predetermined sequence of neighbors, wherein the fourth neighbor is adjacent to the next cell; toggling a state of the fourth neighbor of the next cell, wherein the toggling of the state of the fourth neighbor of the next cell is not performed in response to a read of the fourth neighbor of the next cell; and after the toggling of the state of the fourth neighbor of the next cell, reading from the next cell to determine if a change from the third state to a fourth state occurred.
- the method may be further characterized by the second state being one of a logic state
- FIG. 1 Some of the above embodiments, as applicable, may be implemented using a variety of different information processing systems.
- Figure 1 and the discussion thereof describe an exemplary information processing architecture
- this exemplary architecture is presented merely to provide a useful reference in discussing various aspects of the invention.
- the description of the architecture has been simplified for purposes of discussion, and it is just one of many different types of appropriate architectures that may be used in accordance with the invention.
- Those skilled in the art will recognize that the boundaries between logic blocks are merely illustrative and that alternative embodiments may merge logic blocks or circuit elements or impose an alternate decomposition of functionality upon various logic blocks or circuit elements.
- Coupled is not intended to be limited to a direct coupling or a mechanical coupling.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780101320.4A CN101842843B (en) | 2007-11-01 | 2007-11-01 | MRAM testing |
KR1020107009618A KR20100087310A (en) | 2007-11-01 | 2007-11-01 | Mram testing |
PCT/US2007/083307 WO2009058148A1 (en) | 2007-11-01 | 2007-11-01 | Mram testing |
JP2010532002A JP5127078B2 (en) | 2007-11-01 | 2007-11-01 | MRAM testing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2007/083307 WO2009058148A1 (en) | 2007-11-01 | 2007-11-01 | Mram testing |
Publications (1)
Publication Number | Publication Date |
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WO2009058148A1 true WO2009058148A1 (en) | 2009-05-07 |
Family
ID=40591331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/083307 WO2009058148A1 (en) | 2007-11-01 | 2007-11-01 | Mram testing |
Country Status (4)
Country | Link |
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JP (1) | JP5127078B2 (en) |
KR (1) | KR20100087310A (en) |
CN (1) | CN101842843B (en) |
WO (1) | WO2009058148A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017058111A1 (en) * | 2015-09-28 | 2017-04-06 | Agency For Science, Technology And Research | Method of error detection in a toggle electric field magnetic random access memory (tef-ram) device and tef-ram device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180118840A (en) * | 2017-04-21 | 2018-11-01 | 에스케이하이닉스 주식회사 | Apparatus and method of distributing address in memory device for mitigating write disturbance |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020167838A1 (en) * | 2001-05-14 | 2002-11-14 | Perner Frederick A. | Resistive cross point memory with on-chip sense amplifier calibration method and apparatus |
US20050052901A1 (en) * | 2003-09-05 | 2005-03-10 | Nahas Joseph J. | Circuit for write field disturbance cancellation in an mram and method of operation |
US7158407B2 (en) * | 2005-04-29 | 2007-01-02 | Freescale Semiconductor, Inc. | Triple pulse method for MRAM toggle bit characterization |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6606262B2 (en) * | 2002-01-10 | 2003-08-12 | Hewlett-Packard Development Company, L.P. | Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus |
US6538940B1 (en) * | 2002-09-26 | 2003-03-25 | Motorola, Inc. | Method and circuitry for identifying weak bits in an MRAM |
US7102919B1 (en) * | 2005-03-11 | 2006-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods and devices for determining writing current for memory cells |
-
2007
- 2007-11-01 KR KR1020107009618A patent/KR20100087310A/en not_active Application Discontinuation
- 2007-11-01 JP JP2010532002A patent/JP5127078B2/en not_active Expired - Fee Related
- 2007-11-01 CN CN200780101320.4A patent/CN101842843B/en not_active Expired - Fee Related
- 2007-11-01 WO PCT/US2007/083307 patent/WO2009058148A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020167838A1 (en) * | 2001-05-14 | 2002-11-14 | Perner Frederick A. | Resistive cross point memory with on-chip sense amplifier calibration method and apparatus |
US20050052901A1 (en) * | 2003-09-05 | 2005-03-10 | Nahas Joseph J. | Circuit for write field disturbance cancellation in an mram and method of operation |
US7158407B2 (en) * | 2005-04-29 | 2007-01-02 | Freescale Semiconductor, Inc. | Triple pulse method for MRAM toggle bit characterization |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017058111A1 (en) * | 2015-09-28 | 2017-04-06 | Agency For Science, Technology And Research | Method of error detection in a toggle electric field magnetic random access memory (tef-ram) device and tef-ram device |
Also Published As
Publication number | Publication date |
---|---|
KR20100087310A (en) | 2010-08-04 |
CN101842843A (en) | 2010-09-22 |
JP5127078B2 (en) | 2013-01-23 |
CN101842843B (en) | 2014-06-11 |
JP2011503763A (en) | 2011-01-27 |
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