WO2009057589A1 - Capacitor, semiconductor device comprising the same, and method for manufacturing capacitor - Google Patents

Capacitor, semiconductor device comprising the same, and method for manufacturing capacitor Download PDF

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Publication number
WO2009057589A1
WO2009057589A1 PCT/JP2008/069542 JP2008069542W WO2009057589A1 WO 2009057589 A1 WO2009057589 A1 WO 2009057589A1 JP 2008069542 W JP2008069542 W JP 2008069542W WO 2009057589 A1 WO2009057589 A1 WO 2009057589A1
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
film
insulating film
semiconductor device
same
Prior art date
Application number
PCT/JP2008/069542
Other languages
French (fr)
Japanese (ja)
Inventor
Takashi Nakagawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009539065A priority Critical patent/JP5373619B2/en
Publication of WO2009057589A1 publication Critical patent/WO2009057589A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Abstract

Disclosed is a capacitor wherein an upper electrode and a lower electrode are formed on either side of a capacitor insulating film. In this capacitor, increase of leakage current can be suppressed and EOT can be reduced. Specifically disclosed is a capacitor wherein an upper electrode and a lower electrode are formed on either side of a capacitor insulating film. This capacitor is characterized in that the capacitor insulating film is composed of a dielectric body having a crystal structure and mainly composed of Zr, Al and O. In this dielectric body the composition ratio between Zr and Al satisfies the following relation: (1-x):x (0.01 ≤ x ≤ 0.15). The capacitor is also characterized in that the lower electrode has a multilayer structure composed of a TiN film and one film selected from an Ru film, a Pt film and an Ir film, and the film selected from an Ru film, a Pt film and an Ir film is in contact with the capacitor insulating film.
PCT/JP2008/069542 2007-10-30 2008-10-28 Capacitor, semiconductor device comprising the same, and method for manufacturing capacitor WO2009057589A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009539065A JP5373619B2 (en) 2007-10-30 2008-10-28 Capacitor, semiconductor device having the same, and method of manufacturing capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007281512 2007-10-30
JP2007-281512 2007-10-30

Publications (1)

Publication Number Publication Date
WO2009057589A1 true WO2009057589A1 (en) 2009-05-07

Family

ID=40590980

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069542 WO2009057589A1 (en) 2007-10-30 2008-10-28 Capacitor, semiconductor device comprising the same, and method for manufacturing capacitor

Country Status (2)

Country Link
JP (1) JP5373619B2 (en)
WO (1) WO2009057589A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011018707A (en) * 2009-07-07 2011-01-27 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device, and substrate processing apparatus
JP2011044577A (en) * 2009-08-21 2011-03-03 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
JP2012069871A (en) * 2010-09-27 2012-04-05 Elpida Memory Inc Semiconductor device, method of manufacturing the same, and adsorption site blocking atomic layer deposition method
JP2013131749A (en) * 2011-12-20 2013-07-04 Imec Metal-insulator-metal stack and method for manufacturing the same
CN109494303A (en) * 2017-09-12 2019-03-19 松下知识产权经营株式会社 The manufacturing method of capacity cell, imaging sensor, the manufacturing method of capacity cell and imaging sensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033320A (en) * 2000-07-06 2002-01-31 Sharp Corp Doped zirconia or zirconia-like dielectric film transistor structure, and method of depositing the same
JP2004186516A (en) * 2002-12-05 2004-07-02 Sony Corp Manufacturing method of ferroelectric nonvolatile semiconductor memory
JP2004214304A (en) * 2002-12-27 2004-07-29 Nec Electronics Corp Semiconductor device and its fabricating process
JP2005259872A (en) * 2004-03-10 2005-09-22 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2007081265A (en) * 2005-09-16 2007-03-29 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
JP2007150242A (en) * 2005-11-28 2007-06-14 Hynix Semiconductor Inc Method for manufacturing capacitor of semiconductor element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033320A (en) * 2000-07-06 2002-01-31 Sharp Corp Doped zirconia or zirconia-like dielectric film transistor structure, and method of depositing the same
JP2004186516A (en) * 2002-12-05 2004-07-02 Sony Corp Manufacturing method of ferroelectric nonvolatile semiconductor memory
JP2004214304A (en) * 2002-12-27 2004-07-29 Nec Electronics Corp Semiconductor device and its fabricating process
JP2005259872A (en) * 2004-03-10 2005-09-22 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2007081265A (en) * 2005-09-16 2007-03-29 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
JP2007150242A (en) * 2005-11-28 2007-06-14 Hynix Semiconductor Inc Method for manufacturing capacitor of semiconductor element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011018707A (en) * 2009-07-07 2011-01-27 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device, and substrate processing apparatus
US8685866B2 (en) 2009-07-07 2014-04-01 Hitachi Kokusai Electric, Inc. Method of manufacturing semiconductor device and substrate processing apparatus
JP2011044577A (en) * 2009-08-21 2011-03-03 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
JP2012069871A (en) * 2010-09-27 2012-04-05 Elpida Memory Inc Semiconductor device, method of manufacturing the same, and adsorption site blocking atomic layer deposition method
JP2013131749A (en) * 2011-12-20 2013-07-04 Imec Metal-insulator-metal stack and method for manufacturing the same
CN109494303A (en) * 2017-09-12 2019-03-19 松下知识产权经营株式会社 The manufacturing method of capacity cell, imaging sensor, the manufacturing method of capacity cell and imaging sensor
CN109494303B (en) * 2017-09-12 2024-01-19 松下知识产权经营株式会社 Capacitive element, image sensor, method for manufacturing capacitive element, and method for manufacturing image sensor

Also Published As

Publication number Publication date
JPWO2009057589A1 (en) 2011-03-10
JP5373619B2 (en) 2013-12-18

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