WO2008099863A1 - Semiconductor, semiconductor device, and complementary transistor circuit device - Google Patents
Semiconductor, semiconductor device, and complementary transistor circuit device Download PDFInfo
- Publication number
- WO2008099863A1 WO2008099863A1 PCT/JP2008/052391 JP2008052391W WO2008099863A1 WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1 JP 2008052391 W JP2008052391 W JP 2008052391W WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- electrode
- transistor circuit
- complementary transistor
- circuit device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 230000000295 complement effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
Abstract
Disclosed is a semiconductor device comprising a semiconductor (1), a first electrode (2), an insulating layer (3) formed between the semiconductor (1) and the first electrode (2), a second electrode (4) which is in contact with the semiconductor (1) while being apart from the first electrode (2), and a third electrode (5) which is in contact with the semiconductor (1) while being apart from the first electrode (2) and the second electrode (4). The semiconductor (1) comprises an organic semiconductor layer (10) and an oxide semiconductor layer (11).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008558109A JP5551366B2 (en) | 2007-02-16 | 2008-02-14 | Semiconductor, semiconductor device and complementary transistor circuit device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007036580 | 2007-02-16 | ||
JP2007-036580 | 2007-02-16 | ||
US11/806,995 | 2007-06-05 | ||
US11/806,995 US8129714B2 (en) | 2007-02-16 | 2007-06-05 | Semiconductor, semiconductor device, complementary transistor circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008099863A1 true WO2008099863A1 (en) | 2008-08-21 |
Family
ID=39690090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/052391 WO2008099863A1 (en) | 2007-02-16 | 2008-02-14 | Semiconductor, semiconductor device, and complementary transistor circuit device |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008099863A1 (en) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009028453A1 (en) * | 2007-08-31 | 2009-03-05 | Konica Minolta Holdings, Inc. | Thin film transistor |
JP2009218562A (en) * | 2008-03-07 | 2009-09-24 | Samsung Electronics Co Ltd | Transistor and method of manufacturing the same |
JP2010114184A (en) * | 2008-11-05 | 2010-05-20 | Univ Of Yamanashi | Ambipolar-type organic field-effect transistor |
WO2010119952A1 (en) * | 2009-04-17 | 2010-10-21 | 株式会社ブリヂストン | Thin film transistor and method for manufacturing thin film transistor |
WO2011062048A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
JP2011146694A (en) * | 2009-12-18 | 2011-07-28 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
JP2011192929A (en) * | 2010-03-16 | 2011-09-29 | Ricoh Co Ltd | Semiconductor position detector and optical sensor |
JP2013115111A (en) * | 2011-11-25 | 2013-06-10 | Hitachi Ltd | Oxide semiconductor device and manufacturing method of the same |
JP2013128097A (en) * | 2011-12-16 | 2013-06-27 | Industrial Technology Research Institute | Bipolar transistor device structure and method for manufacturing the same |
JP2013191850A (en) * | 2007-03-20 | 2013-09-26 | Idemitsu Kosan Co Ltd | Sputtering target, oxide semiconductor film, and semiconductor device |
KR101372734B1 (en) | 2012-02-15 | 2014-03-13 | 연세대학교 산학협력단 | Thin film transistor using liquid-phase process and method for fabricating the same |
JP2015062248A (en) * | 2009-11-28 | 2015-04-02 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2015164203A (en) * | 2009-10-05 | 2015-09-10 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor device |
JP2017195417A (en) * | 2009-12-04 | 2017-10-26 | 株式会社半導体エネルギー研究所 | Electronic apparatus |
KR101820703B1 (en) | 2016-07-29 | 2018-03-08 | 엘지디스플레이 주식회사 | Thin film transistor, method for manufacturing the same, and display device including the same |
JP2018061047A (en) * | 2010-09-13 | 2018-04-12 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
JP2019220716A (en) * | 2009-10-30 | 2019-12-26 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2020017743A (en) * | 2010-02-05 | 2020-01-30 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor device |
CN111416040A (en) * | 2020-03-11 | 2020-07-14 | 深圳大学 | Bipolar thin film transistor and preparation method thereof |
JP2020188277A (en) * | 2009-10-16 | 2020-11-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2021044559A (en) * | 2010-03-05 | 2021-03-18 | 株式会社半導体エネルギー研究所 | Manufacturing method for oxide semiconductor film |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS58188165A (en) * | 1982-04-28 | 1983-11-02 | Nec Corp | Semiconductor device |
JPH08228034A (en) * | 1994-12-09 | 1996-09-03 | At & T Corp | Organic thin film transistor device |
JPH09199732A (en) * | 1996-01-16 | 1997-07-31 | Lucent Technol Inc | Product comprising transistors |
JP2006502597A (en) * | 2002-05-21 | 2006-01-19 | ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ | Transistor structure and manufacturing method thereof |
JP2006165532A (en) * | 2004-11-10 | 2006-06-22 | Canon Inc | Semiconductor device utilizing amorphous oxide |
-
2008
- 2008-02-14 WO PCT/JP2008/052391 patent/WO2008099863A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58188165A (en) * | 1982-04-28 | 1983-11-02 | Nec Corp | Semiconductor device |
JPH08228034A (en) * | 1994-12-09 | 1996-09-03 | At & T Corp | Organic thin film transistor device |
JPH09199732A (en) * | 1996-01-16 | 1997-07-31 | Lucent Technol Inc | Product comprising transistors |
JP2006502597A (en) * | 2002-05-21 | 2006-01-19 | ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ | Transistor structure and manufacturing method thereof |
JP2006165532A (en) * | 2004-11-10 | 2006-06-22 | Canon Inc | Semiconductor device utilizing amorphous oxide |
Cited By (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013191850A (en) * | 2007-03-20 | 2013-09-26 | Idemitsu Kosan Co Ltd | Sputtering target, oxide semiconductor film, and semiconductor device |
WO2009028453A1 (en) * | 2007-08-31 | 2009-03-05 | Konica Minolta Holdings, Inc. | Thin film transistor |
JP2009218562A (en) * | 2008-03-07 | 2009-09-24 | Samsung Electronics Co Ltd | Transistor and method of manufacturing the same |
JP2010114184A (en) * | 2008-11-05 | 2010-05-20 | Univ Of Yamanashi | Ambipolar-type organic field-effect transistor |
WO2010119952A1 (en) * | 2009-04-17 | 2010-10-21 | 株式会社ブリヂストン | Thin film transistor and method for manufacturing thin film transistor |
CN102460712A (en) * | 2009-04-17 | 2012-05-16 | 株式会社普利司通 | Thin film transistor and method for manufacturing thin film transistor |
JP2015164203A (en) * | 2009-10-05 | 2015-09-10 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor device |
US9754784B2 (en) | 2009-10-05 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device |
US9627198B2 (en) | 2009-10-05 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film semiconductor device |
JP7072613B2 (en) | 2009-10-16 | 2022-05-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2020188277A (en) * | 2009-10-16 | 2020-11-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2019220716A (en) * | 2009-10-30 | 2019-12-26 | 株式会社半導体エネルギー研究所 | Semiconductor device |
WO2011062048A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US8963149B2 (en) | 2009-11-20 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US8766250B2 (en) | 2009-11-20 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US9306075B2 (en) | 2009-11-20 | 2016-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US9368640B2 (en) | 2009-11-28 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with stacked oxide semiconductor films |
JP2015062248A (en) * | 2009-11-28 | 2015-04-02 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2017195417A (en) * | 2009-12-04 | 2017-10-26 | 株式会社半導体エネルギー研究所 | Electronic apparatus |
US9378980B2 (en) | 2009-12-18 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9728651B2 (en) | 2009-12-18 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2011146694A (en) * | 2009-12-18 | 2011-07-28 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
US9240488B2 (en) | 2009-12-18 | 2016-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10453964B2 (en) | 2009-12-18 | 2019-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2020017743A (en) * | 2010-02-05 | 2020-01-30 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor device |
JP7101739B2 (en) | 2010-03-05 | 2022-07-15 | 株式会社半導体エネルギー研究所 | Method for manufacturing oxide semiconductor film and method for manufacturing transistor |
JP2021044559A (en) * | 2010-03-05 | 2021-03-18 | 株式会社半導体エネルギー研究所 | Manufacturing method for oxide semiconductor film |
JP2011192929A (en) * | 2010-03-16 | 2011-09-29 | Ricoh Co Ltd | Semiconductor position detector and optical sensor |
JP2018061047A (en) * | 2010-09-13 | 2018-04-12 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
US10586869B2 (en) | 2010-09-13 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2013115111A (en) * | 2011-11-25 | 2013-06-10 | Hitachi Ltd | Oxide semiconductor device and manufacturing method of the same |
JP2013128097A (en) * | 2011-12-16 | 2013-06-27 | Industrial Technology Research Institute | Bipolar transistor device structure and method for manufacturing the same |
KR101372734B1 (en) | 2012-02-15 | 2014-03-13 | 연세대학교 산학협력단 | Thin film transistor using liquid-phase process and method for fabricating the same |
KR101820703B1 (en) | 2016-07-29 | 2018-03-08 | 엘지디스플레이 주식회사 | Thin film transistor, method for manufacturing the same, and display device including the same |
CN111416040A (en) * | 2020-03-11 | 2020-07-14 | 深圳大学 | Bipolar thin film transistor and preparation method thereof |
CN111416040B (en) * | 2020-03-11 | 2023-11-14 | 深圳大学 | Bipolar thin film transistor and preparation method thereof |
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