Classifications

• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
  • H02J4/00—Circuit arrangements for mains or distribution networks not specified as AC or DC; Circuit arrangements for mains or distribution networks combining AC and DC sections or sub-networks
  • H02J4/20—Networks integrating separated AC and DC power sections
  • H02J4/25—Networks integrating separated AC and DC power sections for transfer of electric power between AC and DC networks, e.g. for supplying the DC section within a load from an AC mains system
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
  • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
  • H02J2207/00—Details of circuit arrangements for charging or discharging batteries or supplying loads from batteries
  • H02J2207/50—Charging of capacitors, supercapacitors, ultra-capacitors or double layer capacitors

Definitions

• the invention relates to a method and apparatus for lossless transmission of electrical energy between a DC voltage source and a lossy load circuit.
• the current across the resistor of the conductor causes a voltage drop that irrevocably relieves some of the transported energy in the form of heat.
• the resistance can be reduced by increasing the cross-sectional area of the conductor, or the current can be reduced by transforming the transmission voltage upwards.
• the superconductivity of special materials at higher temperatures (170 0 K) another possibility has recently been used to reduce the line resistance during energy transfer.
• the present invention aims to provide a method and a device with which the transmission of electrical energy between a DC voltage source and a lossy load circuit is lossless.
• the invention essentially provides that the DC voltage source is connected via a high-frequency broadband line with at least one quantum memory cell that feeds the lossy consumer circuit, so that the electrical energy in the form of the Dirac function corresponding current pulses, the in accordance with the Heisenberg uncertainty relation cause indeterminable, virtual voltage drops, is transmitted from the DC voltage source to the memory cell.
• This makes it possible to transfer electrical energy extremely fast through almost any thin metallic conductors without losses in the form of heat, which can be significantly reduced, especially in the transmission of large amounts of energy over long distances the effort and cost.
• the invention allows very large currents to flow in very small spaces in special applications and, in the micro sector, for example in highly integrated circuits, to greatly increase the switching speeds of conventional computers and to reduce the cooling costs in mainframes due to the reduction of lost heat.
• the invention can also be used for the transmission of electrical energy by means of high-power DC voltage transmission over large distances between conventional power plants or solar power plants and the consumers. Also conceivable is the use of the invention for the inner-city energy distribution over smaller distances, as well as for the everyday power supply of fixed or mobile consumers.
• the invention can be used for supplying electronic components to highly integrated sub-millimeter circuits.
• the invention makes use of the new quantum physical effect of the virtual photon resonance, in which a so-called quantum memory cell or quantum battery (see WO 2004/004026 A2), ie a memory cell, which can receive current pulses corresponding essentially to the Dirac function , is charged with very short current pulses.
• a quantum memory cell is based on the physical effect whereby very small particles of a chemically highly dipolar crystalline material separated by an insulating medium become conductive under the influence of a strong electric field and at a critical voltage by the effect of virtual photon resonance where the particles concentrate the homogeneous electric field locally so strongly in a very short time that a loss-free charge exchange via current impulses which essentially correspond to the Dirac function speak and have a constant voltage, is caused.
• the crystals are present in the form of nano-granules or in the form of layers with nanometer thickness.
• the crystals are preferably present in the rutile crystal modification, preferably as TiO 2 crystals.
• the structure is preferably such that the crystals and the insulating material are present in layers arranged alternately on one another.
• the particles of the chemically highly dipolar crystal material preferably TiO 2 in the rutile crystal modification, can absorb and store the described energy present in the form of substantially Dirac function on the one hand, and by delivering such current pulses in the form of a current submit.
• a charged quantum memory cell is also able to feed lossy, conventional circuits due to the voltage difference at the two poles.
• the current pulses described are a consequence of the singular quantum jumps taking place in the resonator crystals in the memory cell. They appear to the outside as ideal Dirac current pulses. Such current impulses are characterized by the fact that they never occur separately in time or by extremely small time differences (Pauli principle) that their current effective values are very small at constant voltage and their jump energy therefore below the limit of Heisenberg's uncertainty principle and that they only flow can, if the line bandwidth is greater than about 100 MHz (see Fig.l). Such currents are virtual and cause no "determinable" voltage drops at the electrical line resistance (uncertainty principle). These currents are in the Episode also referred to as "cold" streams.
• the lossless transfer of electrical energy from the DC voltage source to the lossy load circuit via the quantum memory cell is now such that the quantum memory cell feeding the lossy load circuit, corresponding to the energy consumed by the lossy load circuit for their recharging current pulses in the form of Dirac Pulses needed.
• a full-wave rectifier is provided as the DC voltage source.
• the DC voltage source in the case of a rectifier, the electric field of the output capacitor of the rectifier, can deliver these pulses if the bandwidth of the transmission line is sufficiently large.
• the Dirac pulses then reach the resonator of the Quantum memory cell.
• charge per unit time current
• the Dirac pulses deviate from the ideal form.
• the current effective value of the pulses can be measured, ie the pulses become wider and only a reduced number reaches the quantum memory cell. From too great a degree, the resonance on the quantum memory cell completely breaks off and the charging process or the transmission ceases. This effect can be used to adjust the transmission power.
• a bandwidth regulator is connected between the DC voltage source and the quantum memory cell, wherein the transmission is regulated by changing the frequency bandwidth of the line.
• the energy flow can be controlled in this way with a bandwidth controller from the "cold side", ie the side on which the cold current flows.
• the charging process or the resonance also stops when the rectifier is no longer able to maintain the resonance voltage U res at the memory cell with its output voltage due to overload.
• the quantum memory cell is connected in parallel via a high-frequency broadband line with a further quantum memory cell and that between the memory cells preferably a bandwidth regulator is switched.
• a bandwidth controller between the two memory cells.
• the procedure according to the invention is such that a further quantum storage cell is used as the DC voltage source.
• a solar cell or a photodiode is used as the DC voltage source. If a quantum memory cell is followed by a fast (i.e., high frequency broadband) line of a photodiode, it requires “cold” diac current pulses. The "hot”, that is to say classical, currents are eliminated and thus also the adverse loss-rich heating of the cell, whereby the efficiency of the photodiode is greatly increased.
• the high-frequency broadband line used is an elongated and flat line in the manner of a quantum memory cell.
• each memory cell which can receive current pulses corresponding essentially to the Dirac function, such as, for example, a quantum memory cell, naturally has the bandwidth necessary for the transmission of electrical energy to a quantum memory cell, it is ensured that the lossless one Transmission can take place anyway.
• This can be done, for example, by interposing discrete (wound or flat) quantum memory cells directly in front of the consumers.
• the procedure is advantageously such that further quantum memory cells and / or bandwidth regulators are switched at intervals into the line. Due to the fact that the broadband cable is interrupted at intervals with individual storage cells as a booster, the electrical energy can be transmitted lossless over large distances without having to replace the existing cabling.
• the high-frequency broadband line has a bandwidth of more than 90 MHz, which ensures that the Dirac current pulses do not lose their shape and are transmitted lossy.
• the quantum memory cell in micron / nano dimension can be strategically placed in the center of the main consumer along with all other microelectronic components.
• conventional line feeds typically satisfy the necessary broadband capability to carry the energy via Dirac current pulses (through "cold" currents) from the external feed points to the on-chip consumption centers.
• Dirac current pulses through "cold" currents
• no losses are achieved in these power lines, whereby the chip has to be cooled less.
• the power supply within the circuits of the chip takes place in a conventional manner.
• FIG. 2 shows the structure of a quantum memory cell
• FIG. 3 shows the current profile in a test arrangement
• FIGS. 4 and 5 show the physical mode of action.
• Fig. 1 denotes a DC voltage source, in the present case of an AC voltage source and a Full-wave rectifier is formed.
• a photodiode or the like could be provided.
• 2 denotes a high-frequency broadband line, such as a UHF line, a thin, flat quantum memory cell or the like. The current is transmitted loss-free via this line, the same voltage having to be available on both sides of the line 2 apart from the necessary bandwidth, in particular the resonance frequency U res of the consumer-side installed quantum storage cell or quantum battery 3.
• Via further UHF - Lines 2 'of this quantum memory cell 3 further quantum memory cells 3' are connected downstream, which can each feed a lossy circuit 4, wherein the consumers are denoted by 5.
• the internal resistance of the quantum memory cell 3 is negligibly small, since the output voltage remains constant regardless of the load.
• the current consumed by the load 5 is equal to the current provided by the DC voltage source or rectifier 1, with the quantum memory cell 3 remaining fully charged. Both currents, namely the current of the DC voltage source 1 and the current supplied to the consumer 5, are classic ("hot"), ie the moving charge is composed of common particle movements of all conduction electrons.
• the quantum memory cell 3 requires current pulses in the form of Dirac pulses for the recharging each consist of a whole singular motion (quantum leap) of a single whole charge, ie an electron.
• the electric field of the output capacitor of the rectifier 1 can deliver these pulses, if the bandwidth of the transmission line 2 is sufficiently large.
• the Dirac pulses then reach the resonator of the quantum memory cell 3.
• the quantum memory cells In the resonant condition, the quantum memory cells also require Dirac current pulses from the further Quantum memory cells 3 'acting as intermediate booster cells and very fast, with almost no resistance above 10 9 MW / kg (power density) to capacities above 15 MJ / kg (energy density) are loaded.
• 6 or 6 1 denotes a bandwidth regulator, which in the simplest case is formed by a potentiometer.
• the interposed variable resistor can be easily control the recording of the quantum memory cell 3, at the same time no, or only very small, real currents flow through the resistor and so the recording control of large consumers is easy and above all safely accomplished.
• the output of the current of the quantum memory cell 3 is simultaneously limited or regulated accordingly.
• FIG. 2 shows a quantum memory cell 3 which is constructed in a MIS architecture (metal-insulator-semiconductor) on a silicon wafer 7. It consists of a lower electrode 8 made of an n + silicide, a 300 nm thick SiO 2 insulation layer 9, a central 15 nm thick TiO 2 layer 10 of a pure rutile crystal, produced in MOCVD technique, another 300 nm thick insulation layer 11 of SiO 2 and a titanium electrode 12.
• the upper electrode 12 was patterned into 1 mm ⁇ 1 mm patches, so that a capacity of approximately 60 pF is formed in each case.
• 3a and 3b show the actual and the schematic IV measurement results of the arrangement in FIG. 2, wherein a sawtooth Voltage 13 of ⁇ 15000 V / s and ⁇ 240 V amplitude at 15 Hz was applied to the sample.
• the voltage source acts as an energy supplier in the rising voltage curve 15 and as a load on the quantum memory cell during the descending voltage waveform 16.
• the quantum memory cell is a constant voltage source and is when forced a short circuit through the supply source until it is fully charged and is accordingly short-circuited during discharging by the supply source (which is now a load). But because of the extremely fast charge, the short-circuit charge current can not be seen, but the discharge current in region 17 is easily visible. Below approx.
• the capacitor shows the typical current behavior and above it changes to a battery.
• high-energy charge carriers in the form of the virtual cold current also flow to the battery through Dirac current pulses at extremely high speeds.
• the battery discharges with a conventional, lossy, hot current. All Ti0 2 crystal molecular series of equal length discharge at the same voltage. This voltage is then held until complete emptying, with larger discharge current spikes depending on the speed of the imposed downward voltage.
• the measurement in FIG. 3 a clearly shows that no currents are measured in the supply line to the quantum memory cell, the charging current is invisible or virtual: the energy therefore flows absolutely lossless onto the quantum memory cell. This is the cold stream.
• the discharge current of the Quantum memory cell via the external load is a classic hot current and can of course be measured and observed.
• the area denoted by 18 is the area in which the super capacitor can be operated as a constant voltage source and spans approximately 60V.
• the resistor 6 serves as a bandwidth regulator and limited with With a value of 4.75 k ⁇ , the bandwidth and thus the energy flow to the quantum memory cell 3 are already very strong.
• a perfect Dirac current pulse is plotted at 19, wherein the time width of the pulse approaches zero, but the frequency spectrum over the entire signal is equal to one.
• ⁇ f T the frequency bandwidth of a power line is designated. If one sends such a Dirac current pulse over the one line with limited bandwidth, the time width of the Dirac current pulse is stretched or narrowed the frequency spectrum, since a Dirac current pulse is in principle a superposition of all sine or cosine frequencies, but by the limited bandwidth can not all be transmitted.
• the spread current signal is denoted by 20 and by the formula
• the time width of the signal is denoted by ⁇ T and the amplitude of the signal by A, where the product
• a Dirac current pulse thus transmits an effective current:
• the actual energy in a Dirac current pulse is calculated from:
• the energy of a pulse is thus smaller than that required by the uncertainty principle for a measurement; the stream is therefore virtual and does not cause dissipation.
• the particle energy can be equated with the help of the Schrödinger equation of the wave energy.
• the left side describes the kinetic energy jump, describing the jump of an electron into a hole in the Fermi energy distribution, and the right side describes the electric wave energy.
• the effective (RMS) kinetic energy jump is also due
• Fig. 5 shows a modified Minkowski representation of space-time with local nano-curves through gray holes, transporting massed particles at the speed of light.
• ⁇ T the time perceived by the motion or quantum leap, with the particle moving at the speed of light.
• the time in the gray hole is slowed down, however.
• the Minkowski length is given by

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Photovoltaic Devices (AREA)
• Transmitters (AREA)

Priority Applications (6)

Applications Claiming Priority (2)

Publications (2)

Family

ID=40566279

Family Applications (1)

Country Status (9)

Families Citing this family (5)

Family Cites Families (16)

• 2008
  • 2008-10-31 CA CA2704339A patent/CA2704339A1/en not_active Abandoned
  • 2008-10-31 JP JP2010531603A patent/JP2011514126A/ja active Pending
  • 2008-10-31 CN CN2008801142892A patent/CN101939895A/zh active Pending
  • 2008-10-31 KR KR1020107011635A patent/KR20100085144A/ko not_active Withdrawn
  • 2008-10-31 BR BRPI0818145 patent/BRPI0818145A2/pt not_active IP Right Cessation
  • 2008-10-31 RU RU2010121900/07A patent/RU2446545C2/ru not_active IP Right Cessation
  • 2008-10-31 EP EP08844419A patent/EP2206218A2/de not_active Withdrawn
  • 2008-10-31 US US12/740,844 patent/US20100295373A1/en not_active Abandoned
  • 2008-10-31 WO PCT/IB2008/002917 patent/WO2009056960A2/de not_active Ceased

Also Published As

Similar Documents

Legal Events