WO2009052874A1 - Alimentation électrique de pulvérisation à double magnétron et appareil de pulvérisation à magnétron - Google Patents

Alimentation électrique de pulvérisation à double magnétron et appareil de pulvérisation à magnétron Download PDF

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Publication number
WO2009052874A1
WO2009052874A1 PCT/EP2008/003525 EP2008003525W WO2009052874A1 WO 2009052874 A1 WO2009052874 A1 WO 2009052874A1 EP 2008003525 W EP2008003525 W EP 2008003525W WO 2009052874 A1 WO2009052874 A1 WO 2009052874A1
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WIPO (PCT)
Prior art keywords
cathodes
magnetron sputtering
power supply
cathode
accordance
Prior art date
Application number
PCT/EP2008/003525
Other languages
English (en)
Inventor
Roel Tietema
Frank Papa
Geert Sesink
René THOMASITA
Original Assignee
Hauzer Techno Coating Bv
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Publication date
Priority claimed from PCT/EP2007/009326 external-priority patent/WO2008049634A1/fr
Application filed by Hauzer Techno Coating Bv filed Critical Hauzer Techno Coating Bv
Publication of WO2009052874A1 publication Critical patent/WO2009052874A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3485—Means for avoiding target poisoning

Definitions

  • the present invention relates to a dual magnetron sputtering power supply and to a magnetron sputtering apparatus in combination with or having such a dual magnetron sputtering power supply.
  • the oxide film on the one cathode which was previously an anode, is initially more negative because of the electrons which accumulated on the insulating layer and is more strongly bombarded with ions thus cleaning it, i.e. the partial insulating coating on the cathodes is broken down again by the inert gas ions present in the chamber.
  • the coating of articles placed in the vacuum chamber effectively takes place alternately from the first and second cathodes which are operated anti-phase.
  • the other cathode When one cathode is operating as a cathode, the other cathode is operating as an anode.
  • the voltage at the cathodes varies with the degree of poisoning of the target, i.e. of the cathode surface.
  • Dual magnetron sputtering systems are, for example, used in glass coating applications and have two cathodes arranged alongside one another, with a supply of oxygen generally being located between them.
  • the object underlying the present invention is to provide a dual magnetron sputtering power supply and magnetic sputtering apparatus in combination with or having such a dual magnetron sputtering power supply which is able to operate in a stable manner over any desired length of a sputter coating phase, which ensures that the desired balanced operation of sputtering from each of the two cathodes is achieved and leads to a high quality sputtered coating with relatively inexpensive means.
  • a dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes for operation in the dual magnetron sputtering mode, there being an AC power supply connected to the first and second sputtering cathodes, a means for supplying a flow of reactive gas to each of said first and second cathodes via first and second flow control valves each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes, a means for deriving a feedback signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cath
  • each cathode becomes slightly poisoned during one half cycle of the AC power supply and is then partially cleaned again during the next half cycle, it is desirable to achieve an average degree of poisoning of each cathode which remains constant over many cycles of an AC power supply and indeed preferably for the degree of poisoning of each cathode to be the same, and indeed taking automatic account of the possible asymmetry of the removal of reactive gases from the vicinity of each of the cathodes by the vacuum pump associated with the apparatus.
  • the above recited system makes it possible to achieve this end.
  • control circuit comprises a respective regulator or controller for each cathode having as inputs the feedback signals from the cathodes and respective set point signals and producing as outputs a respective partial pressure set point signal, wherein a respective probe respectively associated with each cathode generates an actual pressure signal of the reactive gas, wherein the partial pressure set point signals and the respective actual pressure signals are applied to respective inputs of further regulators or controllers, the respective output signals of which serve to generate actuation signals for actuating the flow control valves supplying reactive gas to the respectively associated cathodes.
  • Fig. 1 a first practical embodiment of a dual magnetron sputtering power supply in accordance with the present invention shown in schematic form
  • FIG. 2C diagrams to explain the voltages present at two cathodes (cathode 1, Fig. 2B and cathode 4, Fig. 2C) fed in a magnetron sputtering apparatus by an AC voltage in accordance with Fig. 2A which is applied between them,
  • Fig. 3 a schematic diagram to illustrate the layout of a magnetron sputtering apparatus and to further explain the asymmetry of the removal of reactive gas from the vacuum chamber by the vacuum pump,
  • Fig. 4 a preferred embodiment of the dual magnetron sputtering power supply in accordance with the present invention.
  • Fig. 5 an embodiment of the present invention using two pairs of opposed cathodes of opposed magnetic polarity for depositing multi-layers of for example (without restriction) Si and Ti or Si and Ta using crossed magnetic fields
  • Fig. 6 an embodiment similar to that of Fig. 5 but with the cathodes being of alternating magnetic polarity around the table for the generation of a magnetic containment field
  • Fig. 7 a diagram similar to Fig. 5 and Fig. 6 but showing the use of an auxiliary plasma source in the form of a microwave source
  • Fig. 8 a diagram showing the use of an electron beam plasma source
  • Fig. 9 a further diagram explaining the design of Fig. 8 and
  • Fig. 10 a diagram showing a special arrangement for the supply of power to an embodiment in accordance with Fig. 5 or Fig. 6 with arcing protection.
  • Fig. 1 the attached drawing shows a dual magnetron sputtering power supply (DMS) in accordance with the present invention, as defined in the claims.
  • the dual magnetron sputtering power supply is connected to first and second cathodes 1 and 4.
  • the cathodes 1 and 4 are located with other cathodes 6 and 7 and optionally with further arc cathodes or magnetron cathodes (not shown) in a vacuum chamber (also not shown here but shown in Fig. 3) and can be operated from an AC power supply 8 which usually is connected as shown in Fig. 1 so that alternating operation of the two generally opposed cathodes is achieved.
  • Each of the first and second cathodes 1 and 4 is equipped with a respective gas frame 9, 10 for the supply of reactive gas at an inlet near the respective cathode.
  • the cathodes 1 and 4 are connected to a DMS (Dual Magnetron Sputtering Power Supply), which normally operates with an alternating current in the frequency range 40Khz to 60Khz.
  • DMS Dual Magnetron Sputtering Power Supply
  • the cathodes 6 and 7 can also form a pair of opposed cathodes in the same way as the first and second cathodes 1 and 4 and can also be operated with a power supply as used for the first and second cathodes 1 and 4.
  • the cathodes 6 and 7 can also have a control system as provided for the cathodes 1 and 4, i.e. a separate control system designed in the same way as that which will be described here for the first and second cathodes. It is also possible to provide further pairs of opposed cathodes, for example three, four or more pairs of opposed and spaced apart cathodes, each with its own power supply and control system.
  • the cathodes are advantageously opposed to each other, but do not necessarily need to be opposed to each other.
  • State of the art for a DMS configuration (as it seems to be done in glass coaters) is that a voltage feedback signal controls the reactive gas flow (here: O2 flow) to cathode 1, in order to keep the cathode at a stable working point (see literature of Bill Sproul on IRESS).
  • O2 flow to the second cathode 4 is controlled in the prior art by an Optical Emission Controller.
  • a feedback signal (Vl -signal) from first cathode 1 voltage (or from the DMS power supply) is used for control of a first O2 inlet valve 12 at the first cathode 1, whereas control of a second O2 inlet valve at the second cathode 4 is governed by the feedback signal (“V4-signal”) of the second cathode 4 voltage.
  • V4-signal a feedback signal from first cathode 1 voltage (or from the DMS power supply) is used for control of a first O2 inlet valve 12 at the first cathode 1
  • V4-signal the feedback signal
  • These are separate transmitters of voltage, measuring AC apparent voltage, AC rectified voltage or DC voltage.
  • the elements shown in the drawing by symbols have their usual meaning.
  • the triangle in a circle 16 represents the vacuum pump for producing the required operating vac- uum in the chamber and the triangle in a square symbol signifies a feedback controlled regulator 18, 20 respectively.
  • V 1 SET POINT and V4 SET POINT respectively corresponding to the requirement of the control system.
  • This set point value is generally chosen to be a DC voltage but it could also be a profiled, time dependent voltage. For O2 this value is lower than the voltage in metallic (non-reactive) mode, at least when the cathodes are made of Al for forming, e.g., an AI2O3 coating. For other gas /metal combinations this might be a higher value.
  • the argon (Ar) flow for sputtering (non-reactive sputter gas) is supplied at a different place 22 than the O2 inlet (in general this is the state of the art), but it could also be supplied near the cathode, e.g. at 22', or combined with the O2 supply near the cathode, e.g. at the gas frames 9 and 10 associated with the cathodes 1 and 4. It can also be supplied at one of the other cathodes or centrally or at any other appropriate place in or adjacent to the vacuum chamber or system.
  • the control system is preferably realized with fast response MFC's (mass flow controllers), i.e. 18, 20, for reactive sputtering of oxygen or other difficult to sputter materials with a fairly big voltage difference between the metallic mode and the fully poisoned reactive mode.
  • MFC's mass flow controllers
  • the problem of target poisoning is one of the prime reasons for using a dual mode magnetron sputtering system.
  • the cathode is initially clean aluminum.
  • a layer of aluminum oxide forms on the target thus poisoning it.
  • the oxide film is broken down again by the inert gas ions in the chamber.
  • the voltage at the cathodes varies with the degree of poisoning of the target (cathode surface).
  • Figs. 2A to 2C an explanation can be given of how the sinusoidal wave form generated by the AC power source 8 as shown in Fig. 2A relates to the voltages at the two cathodes 1 and 4.
  • the voltage at the cathodes 1 and 4 in each case corresponds to a negative half wave of the sinusoidal supply, with the two half waves being shifted relative to one another by 180° as shown in Figs. 2B and 2C. Because of the rectifying action of the magnetron sputtering apparatus, which operates in both directions, i.e. the polarity of the effective anode is reversed each half cycle, the voltage at the cathodes during the positive half phases is only slightly above zero and the cathode acts during this part of the cycle as an anode.
  • the cathodes 1 and 4 act as cathodes, in the periods in between they act as anodes with a small anode voltage.
  • reactive sputtering takes place from the respective cathode and the cathode surface is cleaned.
  • the respective cathodes act as an anode, i.e. each alternate half cycle, sputtered material accumulates on them, i.e. insulating material and this accumulated material is subsequently removed again during the next negative half cycle when the respective cathode is acting as a sputtering cathode.
  • the cathodes become contaminated, they are cleaned again during each half cycle in which they are acting as sputtering cathodes the desired reactive sputter- ing takes place, with it being possible to keep the average degree of poisoning at each cathode 1, 4 constant over a long period of time.
  • the peak negative amplitude of the voltage present at the cathodes 1 and 4 as shown in Figs. 2B and 2C is generally desirably the same at each cathode, but is less than the open circuit output of the AC source 8 because of the average degree of target poisoning.
  • FIG. 3 there can be seen a schematic drawing of a magnetron sputtering apparatus having a chamber 30 of generally octagonal shape in the traditional form used by Hauzer Techno Coating BV.
  • a chamber 30 of generally octagonal shape in the traditional form used by Hauzer Techno Coating BV.
  • this shape of chamber is convenient any other desired chamber shape can be used and indeed one or more opposed pairs of cathodes can be arranged facing each other at opposite sides of an elongate, tunnel-like treatment chamber through which articles to be treated are moved from an inlet (vacuum lock) at one end of the tunnel to an outlet (vacuum lock) at an opposite end of the tunnel.
  • the chamber shown in Fig. 3 has a central portion 32 and two large hinged doors 34, 36 which each include two elongate, generally rectangular cathodes 1, 7 and 4, 6, which can thus be easily accessed for maintenance and exchange.
  • the long sides of the rectangular cathodes are perpendicular to the plane of the drawing.
  • Associated with each cathode 1, 7, 4, 6 is, in the usual way, a system of magnets (permanent magnets and/ or magnetic coils) which generate the magnetic field necessary for magnetron operation.
  • magnets permanent magnets and/ or magnetic coils
  • the pivotally mounted doors 34, 36 can be pivoted into the position shown in broken lines to close the chamber in use.
  • the chamber typically has a generally octagonal base and octagonal cover which seal the chamber so that a vacuum can be generated therein by the vacuum pump 16.
  • a rotary table 38 which carries workpieces either directly or on further smaller rotary tables 40 which rotate about their own axes as well as rotating with the table 38 about the central vertical axis 39 of the chamber as indicated by the arrowhead 38'.
  • the cathode 4 is closer to the vacuum pump 16 than the cathode 1, i.e. the generally opposed cathodes 1, 4 are asymmetrically arranged with respect to the vacuum pump 16 and this means that the vacuum pump 16 will tend to extract more reactive gas from the vicinity of the cathode 4 than from the vicinity of the cathode 1 and this has to be compensated by increasing the supply of reactive gas via a respective gas frame 10 associated with the cathode 4 relative to the supply of reactive gas supplied via the gas frame 9 associated with the cathode 1.
  • FIG. 4 a preferred embodiment of the dual magnetron sputtering power supply in accordance with the present invention will now be described.
  • some reference numerals are common to the reference numerals used in Fig. 1 and it will be understood that these reference numerals refer to the same items as in Fig. 1 and that the same description applies unless something is specifically stated to the contrary.
  • the vacuum chamber is not shown for the sake of simplicity-
  • the workpiece table 38 i.e. the table which carries the workpieces (either directly or indirectly using individual tables such as 40 in Fig. 3, is schematically illustrated between the opposed cathodes 1 and 4 as are the gas frames 9 and 10 associated with the respective cathodes.
  • the gas frames do not necessarily have to extend around all four sides of the rectangular cathodes but typically extend along the two longitudinal sides of the elongate rectangular cathodes as shown by the drawings of Fig. 3. The idea is to obtain a uniform gas distribution in front of the cathodes.
  • Fig. 4 shows, in distinction to Fig. 1, first and second lambda sensors, A 1 and ⁇ 4, which are arranged in the proximity of the cathodes 1 and 4 and of the gas frames 9 and 10 and which serve to measure the partial pressure of the reactive gas, in this case oxygen.
  • the reactive gas is a different gas, for example nitrogen, then obviously other probes have to be used which are sensitive to the concentration of the reactive gas being used.
  • each cathode relative to ground is measured and respective voltage signals Vl and V4, which comprise the actual voltage signals, are supplied to respective regulators 18 and 20 which can, for example, be completely separate regulators or can be integrated into a common control system as indicated by the block in Fig. 4.
  • This can, for example, be a sps controller or regulator system 19 as well known per se.
  • Each of the two regulators or controllers 18 and 20 receives a set point signal VISETPOINT, V4SETPOINT for the respective voltages Vl and V4, which can either be fixed voltages or can have a specific voltage profile desired for a particular operation.
  • the controllers or regulators 18, 20 thus each compare the actual measured voltage Vl and V4 with the respective set point voltage VISETPOINT and V4SETP01NT respectively and produce an output signal which represents a desired partial pressure signal for the reactive gas, in this case O2, in the vicinity of the respective cathode 1 or 4, i.e. the signals PiDEs. ⁇ 2 and P4DES.O2.
  • the values of ViSETPoiNT and V4SETPOINT are generally the same as each other.
  • the signals from the two lambda sensors, A 1 and ⁇ 4 provide a signal proportional to the actual partial pressure P 1 ACT and P4ACT respectively present in the vicinity of the cathodes 1 and 4.
  • the boxes labeled 30 and 32 represent further regulators or controllers which then compare the desired partial pressure signals abbreviated PIDES-O2 and P4DES.O2, with the actual pressure signals P 1 ACT and P4ACT and produce output signals PiouT and P40UT which control the mass flow controllers 12 and 14 used to control the flow of the reactive gas, in this example O2, to the respective gas frames 9 and 10.
  • the input lines to the gas flow controllers 12 and 14 can come from a common source and they are simply schematically shown as if they come from different sources in Fig. 4.
  • a dual mode magnetron sputtering system having workpieces on a movable workpiece table 38 there is a significant tendency for electrons in the vicinity of the cathodes 1 and 4 to be affected by gaps which appear on rotation of the workpiece table in such a way that they may tend to move to the other respective cathode when acting as an anode and thus result in fluctuation of the voltage signals V 1 and V4.
  • the regulators or controllers 18, 20 are selected to be relatively slow regulators so that they tend to smooth out voltage fluctuations and maintain the voltages V 1 and V4 measured at the respective cathodes 1 and 4 within preselected band- widths. Thus, fluctuations of the voltages V 1 and V4 do not lead to instabilities in operation.
  • the output signals of the regulators or controller 18, 20 are used as desired partial pressure signals for the partial pressures of the reactive gas present in the vicinity of the cathodes 1 and 4.
  • the action of the output signals P 1 OUT and P40UT of the further regulators 30 and 32 on the mass flow controllers 12 or 14 thus tries to correct the supply of reactive gas to the respective cathodes 1 and 4 so that the actual pressure values P 1 ACT and P4ACT correspond as closely as possible to the partial pressure desired signals PiDES. ⁇ 2 and P4DES.O2.
  • the respective partial pressures set in this way in turn vary the voltage feedback signals V 1 and V4 and thus permit correction of the conditions prevailing at the cathodes 1 and 4 so that these are operated at or close to the desired set point values V 1 SETPOiNT and V4SETPOINT respectively.
  • further regulators 30 and 32 are described as hard regulators in the sense that they react quickly to changes of the desired partial pressures P 1 DES and P4DES, it is believed that these could also be realized as soft regulators without significant disadvantage.
  • the character of the feedback signal means that a decrease of the set point value physically relates to an increase of the partial pressure (for example in mbar).
  • the precise layout of the controls can include multiplication of signals with predefined values to improve the control response and to ensure that the system operates within the preset band widths.
  • Fig. 5 there can be seen a system for depositing multilayers of, for example, silicon dioxide and titanium oxide or silicon dioxide and tantalum dioxide.
  • the first pair of opposed cathodes 1, 4 consist of silicon
  • the second pair of opposed cathodes 6 and 7 consist of either tantalum or titanium (or could consist of other materials or elements) .
  • the cathodes will be incorporated in a usual vacuum chamber with vacuum pump and one or more inlets for inert gases such as argon and reactive gases such as oxygen or nitrogen.
  • the usual magnet systems associated with each cathode for magnetron sputtering are also provided but not shown.
  • the respective pairs of opposed cathodes 1, 4, and 6, 7 are of opposite magnetic polarity so that crossed magnetic fields result in the region of the table 38 above the table where the work-pieces are located.
  • the pairs of cathodes 1, 4 and 6, 7 can be operated as dual magnetron cathodes, i.e. have power supplies and associated control systems as described in connection with Figs. 1 to 4.
  • the cathodes 6 and 7 could be other magnetron cathodes, for example magnetron cathodes operated in the HIPIMS mode. Equally the cathodes 6 and 7 could be opposed magnetron cathodes operated in the dual magnetron sputtering mode whereas the cathodes 1 and 4 could be other magnetron cathodes, for example operated in a HIPIMS mode.
  • HIPIMS sputtering is well known per se and has certain advantages of high deposition rates and good etching properties.
  • HIPIMS techniques are, for example; described in European patent 1 260 603. Since the opposing cathodes of each pair of cathodes are given opposite magnetic polarities by the associated magnet systems, a crossed magnetic field system results as shown by the field lines 48.
  • Fig. 6 shows a similar arrangement also having first and second pairs of opposed cathodes 1, 4 and 6, 7 which are however in this case each of the same magnetic polarity so that the poles of the cathodes surrounding the table 38, i.e. actually disposed generally above the table 38 with respect to the longitudinal axis 39 of the vacuum chamber (equivalent to the axis of rotation of the table 38), have alternating polarities, i.e. S, N, S, N around the longitudinal axis, and this results in a magnetic containing field as illustrated at 50 in Fig. 6 which helps trap the plasma in a space above the table 38 and enhances the coating process.
  • first and second pairs of opposed cathodes 1, 4 and 6, 7 which are however in this case each of the same magnetic polarity so that the poles of the cathodes surrounding the table 38, i.e. actually disposed generally above the table 38 with respect to the longitudinal axis 39 of the vacuum chamber (equivalent to the axis of rotation of the table 38), have
  • pairs of the first cathodes 1, 4 and 6, 7 can both be dual magnetron sputtering cathodes or can be one pair opposed dual magnetron sputtering cathodes and another pair of cathodes operating as HIPIMS cathodes or a pair of cathodes operated as dual magnetron sputtering cathodes and another pair operated as arc cathodes.
  • further pairs of opposed cathodes can be added so that for example HIPIMS cathodes, dual magnetron cathodes and arc sputtering cathodes can all be used in the same chamber.
  • two further pairs of opposed cathodes can be mounted at each of the two further opposite sides of the octangular chamber of Fig. 3 (for example at the sides to which the lead lines for the reference numerals 34 and 36 end) and that further pairs of opposed cathodes can be arranged at the top and bottom of the chamber of Fig. 3.
  • Fig. 7 shows how the pairs of the opposed cathodes 1, 4 and 6, 7, which in this case are all dual magnetron sputtering cathodes (but could be other types of cathodes such as described above) can be used together with a plasma source illustrated here as a microwave plasma source (well known per se) which operates to produce an enhanced plasma in the space between the opposed cathodes 1, 4 and 6, 7 above the workpiece table 38 which again leads to improved ionization and coating.
  • the plasma source 52 is shown here arranged between the two cathodes 1 and 7 and positioned to direct microwave radiation into the chamber in generally radial planes of the chamber. This is however not a restriction on the position of the microwave generator, it could, for example, be arranged at the top of the vacuum chamber so that the microwaves are directed downwardly into the chamber or it could be positioned anywhere else in the chamber which is deemed convenient.
  • a microwave plasma source is not the only type of plasma source that can be used with benefit with dual magnetron sputtering arrangements, it is possible to use any other type of plasma generator for example an RF plasma source which typically operates at 13.5 or 27 mHz (industrially approved frequencies) whereas the microwave source typically operates at 2.15 GHz.
  • Electron beam sources can also be used to generate an enhanced plasma in the middle of the chamber and this is illustrated with respect to Figs. 8 and 9.
  • the reference numeral 54 designates a hot filament which is connected to the center to the negative terminal of a DC power supply 56.
  • the positive terminal of the DC power supply 56 is connected to an anode 58 adjacent the bottom of the chamber.
  • electrons liberated from the hot filament 54 are attracted towards the anode 58 and cause ionization of gas atoms and molecules within the chamber so that a highly ionized plasma is present between the hot filament 54 and the anode 58.
  • the anode 58 is typically floating with respect to ground.
  • Fig. 9 shows in somewhat more detail how the arrangement actually works.
  • the electron beam plasma generator is positioned to the side of the table 38, for example in a position shown for the microwave generator 52 in Fig. 7, with the hot filament 54 disposed towards the top of the chamber facing towards the anode 58 which is located towards the bottom of the chamber (but an inverted arrangement is also entirely possible).
  • the negative terminal of the power supply 56 is connected here to the center tap of the secondary winding 60 of a transformer 62 which supplies the power pulses used to heat the generally resistive filament 54.
  • the primary winding 64 of the transformer is fed from an AC power supply (not shown) via a thyristor based device 66 which acts as a phase angle control, i.e.
  • phase controlled power modulator a Phasenanrough- Kunststoffung in German.
  • reference numeral 66 designates a switch which can be used to switch the anode on and off thus align the electron beams to be switched on and off.
  • Fig. 10 shows an arrangement similar to that of Fig. 5 but illustrating the respective power supplies for the two pairs of opposed cathodes 1, 4 and 6, 7.
  • a so-called bias power supply 70 is provided which is usually connected to the table 38, for example via slip rings, to maintain the table 38 and in particular the workpieces mounted thereon at a selected negative voltage (which need not necessarily be a constant voltage).
  • Such a bias power supply 70 is provided in this example with an arcing detection system which senses the presence of an arc on either of the opposed pairs of cathodes 1, 4, and 6, 7, for example by an increase of current flowing in the bias power supply circuit. Once an arc is detected, the arc detection system operates to open the switches 72 and 74 to disconnect the cathodes 1, 4 and/or 6 and 7 from the respective alternating power supplies 8 and 8'.
  • the cathode should be switched off.
  • Fig. 10 the arrangement of Fig. 5 has been shown the magnetic arrangement of Fig. 6 could also be used to advantage.
  • some of the opposed cathodes can be magnetron cathodes and other opposed cathodes can be HIPIMS cathodes it is also possible to use just one cathode as a HIPIMS cathode and indeed the dual magnetron cathodes can also be used as HIPIMS cathodes if they are disconnected from the dual magnetron power supply and connected instead to a HIPIMS power supply.

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Abstract

L'invention concerne une alimentation électrique de pulvérisation à double magnétron à utiliser avec un appareil de pulvérisation à magnétron comprenant au moins une première et une seconde cathode de pulvérisation (1, 4) conçues pour fonctionner en mode de pulvérisation à double magnétron, ainsi qu'un moyen (9, 10) pour alimenter chacune desdites première et seconde cathodes en un débit de gaz réactif par l'intermédiaire d'une première et d'une seconde vanne de régulation du débit (12, 14), chacune associée à une cathode respective desdites première et seconde cathodes et chacune adaptée pour réguler un débit de gaz réactif vers la cathode associée respectivement. L'alimentation électrique comprend, pour chacune desdites première et seconde cathodes, un moyen permettant de dériver un signal de retour de la tension détectée sur la cathode concernée, un circuit de commande permettant de contrôler le débit de gaz réactif vers la cathode associée respectivement en contrôlant la vanne de régulation du débit respective et pouvant régler la vanne de régulation du débit respective afin d'obtenir un signal de retour de tension de la cathode concernée correspondant à une valeur de point définie pour cette cathode. L'invention revendique également un appareil de pulvérisation à magnétron en combinaison avec une telle alimentation électrique.
PCT/EP2008/003525 2007-10-26 2008-04-30 Alimentation électrique de pulvérisation à double magnétron et appareil de pulvérisation à magnétron WO2009052874A1 (fr)

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PCT/EP2007/009326 WO2008049634A1 (fr) 2006-10-26 2007-10-26 Alimentation de bombardement cathodique à double magnétron et appareil de bombardement cathodique à magnétron
EPPCT/EP2007/009326 2007-10-26

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