WO2009041781A3 - Polysilicon film and method of forming the same, flash memory device and manufacturing method using the same - Google Patents

Polysilicon film and method of forming the same, flash memory device and manufacturing method using the same Download PDF

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Publication number
WO2009041781A3
WO2009041781A3 PCT/KR2008/005706 KR2008005706W WO2009041781A3 WO 2009041781 A3 WO2009041781 A3 WO 2009041781A3 KR 2008005706 W KR2008005706 W KR 2008005706W WO 2009041781 A3 WO2009041781 A3 WO 2009041781A3
Authority
WO
WIPO (PCT)
Prior art keywords
polysilicon film
same
flash memory
memory device
manufacturing
Prior art date
Application number
PCT/KR2008/005706
Other languages
French (fr)
Other versions
WO2009041781A2 (en
Inventor
Tae Wan Lee
Hyun Ho Lee
Kyung Han Ryu
Original Assignee
Jusung Eng Co Ltd
Tae Wan Lee
Hyun Ho Lee
Kyung Han Ryu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Eng Co Ltd, Tae Wan Lee, Hyun Ho Lee, Kyung Han Ryu filed Critical Jusung Eng Co Ltd
Publication of WO2009041781A2 publication Critical patent/WO2009041781A2/en
Publication of WO2009041781A3 publication Critical patent/WO2009041781A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

Provided are a polysilicon film and a method of manufacturing the same, and a flash memory device employing the polysilicon film and a method of manufacturing the flash memory device. After the polysilicon film grows to a thickness that is the same as a grain size, an impurity gas is supplied to provide a lot of impurities into boundaries of grains, thereby suppressing the continuous growth of grains and forming the polysilicon film having small, uniform, nano-size grains whose size is less than 10 nm. The impurities existing in the boundaries suppress the growth of grains in subsequent processes. By using the polysilicon film as a floating gate of the flash memory device, it is possible to increase a program or erase speed and improve thermal stability, thereby enhancing the reliabilty of the device.
PCT/KR2008/005706 2007-09-27 2008-09-26 Polysilicon film and method of forming the same, flash memory device and manufacturing method using the same WO2009041781A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070097199A KR20090032196A (en) 2007-09-27 2007-09-27 Polysilicon film and method of forming the same, flash memory device and manufacturing method using the same
KR10-2007-0097199 2007-09-27

Publications (2)

Publication Number Publication Date
WO2009041781A2 WO2009041781A2 (en) 2009-04-02
WO2009041781A3 true WO2009041781A3 (en) 2009-05-28

Family

ID=40512025

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/005706 WO2009041781A2 (en) 2007-09-27 2008-09-26 Polysilicon film and method of forming the same, flash memory device and manufacturing method using the same

Country Status (3)

Country Link
KR (1) KR20090032196A (en)
TW (1) TW200926270A (en)
WO (1) WO2009041781A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100953035B1 (en) * 2008-03-27 2010-04-14 주식회사 하이닉스반도체 Non-volatile memory device and method of fabricating the same
US20110159674A1 (en) * 2009-12-30 2011-06-30 Hynix Semiconductor Inc. Method of Manufacturing Nonvolatile Memory Devices
TWI582963B (en) * 2015-08-28 2017-05-11 旺宏電子股份有限公司 Memory device and method for fabricating the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441904A (en) * 1993-11-16 1995-08-15 Hyundai Electronics Industries, Co., Ltd. Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries
US20040266212A1 (en) * 2003-06-30 2004-12-30 Lee Chang Jin Method for manufacturing semiconductor device
KR20050002085A (en) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 Method for forming a floating gate in flash memory device
JP2006120663A (en) * 2004-10-19 2006-05-11 Sharp Corp Non-volatile semiconductor storage and manufacturing method thereof
KR20060099694A (en) * 2005-03-14 2006-09-20 삼성전자주식회사 Semiconductor substrate having gettering site layer and method of forming the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441904A (en) * 1993-11-16 1995-08-15 Hyundai Electronics Industries, Co., Ltd. Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries
US20040266212A1 (en) * 2003-06-30 2004-12-30 Lee Chang Jin Method for manufacturing semiconductor device
KR20050002085A (en) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 Method for forming a floating gate in flash memory device
JP2006120663A (en) * 2004-10-19 2006-05-11 Sharp Corp Non-volatile semiconductor storage and manufacturing method thereof
KR20060099694A (en) * 2005-03-14 2006-09-20 삼성전자주식회사 Semiconductor substrate having gettering site layer and method of forming the same

Also Published As

Publication number Publication date
TW200926270A (en) 2009-06-16
KR20090032196A (en) 2009-04-01
WO2009041781A2 (en) 2009-04-02

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