WO2009041502A1 - 角速度検出装置及び角速度検出装置の製造方法 - Google Patents

角速度検出装置及び角速度検出装置の製造方法 Download PDF

Info

Publication number
WO2009041502A1
WO2009041502A1 PCT/JP2008/067301 JP2008067301W WO2009041502A1 WO 2009041502 A1 WO2009041502 A1 WO 2009041502A1 JP 2008067301 W JP2008067301 W JP 2008067301W WO 2009041502 A1 WO2009041502 A1 WO 2009041502A1
Authority
WO
WIPO (PCT)
Prior art keywords
angular velocity
detecting device
velocity detecting
manufacturing
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067301
Other languages
English (en)
French (fr)
Inventor
Daisuke Kaminishi
Masaki Takaoka
Yoshikazu Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/678,942 priority Critical patent/US20100206073A1/en
Priority to JP2009534360A priority patent/JP5451396B2/ja
Priority to CN200880108653A priority patent/CN101809408A/zh
Publication of WO2009041502A1 publication Critical patent/WO2009041502A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5656Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)

Abstract

 半導体基板(2)と、半導体基板(2)上に形成された振動子(3)と、半導体基板(2)上に形成され、振動子(3)を制御する制御回路(4)とを備える。
PCT/JP2008/067301 2007-09-25 2008-09-25 角速度検出装置及び角速度検出装置の製造方法 Ceased WO2009041502A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/678,942 US20100206073A1 (en) 2007-09-25 2008-09-25 Angular velocity detecting device and manufacturing method of the same
JP2009534360A JP5451396B2 (ja) 2007-09-25 2008-09-25 角速度検出装置
CN200880108653A CN101809408A (zh) 2007-09-25 2008-09-25 角速度检测装置和角速度检测装置的制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007247885 2007-09-25
JP2007-246787 2007-09-25
JP2007246787 2007-09-25
JP2007-247885 2007-09-25

Publications (1)

Publication Number Publication Date
WO2009041502A1 true WO2009041502A1 (ja) 2009-04-02

Family

ID=40511385

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067301 Ceased WO2009041502A1 (ja) 2007-09-25 2008-09-25 角速度検出装置及び角速度検出装置の製造方法

Country Status (4)

Country Link
US (1) US20100206073A1 (ja)
JP (1) JP5451396B2 (ja)
CN (1) CN101809408A (ja)
WO (1) WO2009041502A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2824422A4 (en) * 2012-03-09 2015-03-04 Panasonic Corp INERTIA FORCE SENSOR
JP2021093703A (ja) * 2019-12-05 2021-06-17 富士フイルム株式会社 圧電memsデバイス、製造方法および駆動方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101514990B (zh) * 2008-02-21 2014-01-29 天津先阳科技发展有限公司 人体组织液成分含量传感器、流体通道单元及其检测方法
JP2013030905A (ja) * 2011-07-27 2013-02-07 Seiko Epson Corp Mems振動子および発振器
JP5380756B2 (ja) * 2011-08-10 2014-01-08 日立金属株式会社 圧電体膜素子の製造方法
CN105823904A (zh) * 2016-03-21 2016-08-03 中国科学院半导体研究所 双自由度mems压电梁结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63500068A (ja) * 1985-06-11 1988-01-07 ザ フオツクスボロ− カンパニ− 共振式センサ及びその製作方法
JPH08114456A (ja) * 1994-10-14 1996-05-07 Nippondenso Co Ltd 半導体ヨーレートセンサ
JP2001520385A (ja) * 1997-10-14 2001-10-30 アービン・センサーズ・コーポレイション 複数要素のマイクロジャイロ
JP2004525352A (ja) * 2000-12-22 2004-08-19 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 特に可動質量体を有する半導体構成素子を製作するための方法ならびに該方法により製作された半導体構成素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657150A (en) * 1993-09-10 1997-08-12 Eyeonics Corporation Electrochromic edge isolation-interconnect system, process, and device for its manufacture
JP4336946B2 (ja) * 2003-03-20 2009-09-30 セイコーエプソン株式会社 回転角速度の測定方法および装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63500068A (ja) * 1985-06-11 1988-01-07 ザ フオツクスボロ− カンパニ− 共振式センサ及びその製作方法
JPH08114456A (ja) * 1994-10-14 1996-05-07 Nippondenso Co Ltd 半導体ヨーレートセンサ
JP2001520385A (ja) * 1997-10-14 2001-10-30 アービン・センサーズ・コーポレイション 複数要素のマイクロジャイロ
JP2004525352A (ja) * 2000-12-22 2004-08-19 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 特に可動質量体を有する半導体構成素子を製作するための方法ならびに該方法により製作された半導体構成素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2824422A4 (en) * 2012-03-09 2015-03-04 Panasonic Corp INERTIA FORCE SENSOR
JP2021093703A (ja) * 2019-12-05 2021-06-17 富士フイルム株式会社 圧電memsデバイス、製造方法および駆動方法
JP7316926B2 (ja) 2019-12-05 2023-07-28 富士フイルム株式会社 圧電memsデバイス、製造方法および駆動方法

Also Published As

Publication number Publication date
US20100206073A1 (en) 2010-08-19
CN101809408A (zh) 2010-08-18
JP5451396B2 (ja) 2014-03-26
JPWO2009041502A1 (ja) 2011-01-27

Similar Documents

Publication Publication Date Title
WO2007145790A3 (en) An integrated circuit device having barrier and method of fabricating the same
AU2003235902A1 (en) Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
WO2009042028A3 (en) Lanthanide dielectric with controlled interfaces
TW200802830A (en) Solid state image pickup device, method for manufacturing the same, semiconductor device and method for manufacturing the same
WO2009041502A1 (ja) 角速度検出装置及び角速度検出装置の製造方法
WO2008094287A3 (en) Three-dimensional integrated circuit for analyte detection
WO2007092606A3 (en) Displays including semiconductor nanocrystals and methods of making same
WO2008057671A3 (en) Electronic device including a conductive structure extending through a buried insulating layer
TW200802889A (en) Semiconductor device and manufacturing method thereof
WO2006071967A3 (en) Capacitance-based moisture sensor and controller
WO2005074435A3 (en) Apparatus for providing haptic feedback
WO2008021791A3 (en) Nano structured phased hydrophobic layers on substrates
WO2011049326A3 (en) Patterned retardation film and method for manufacturing the same
WO2009013315A3 (de) Halbleitersubstrat mit durchkontaktierung und verfahren zu seiner herstellung
WO2008103331A3 (en) Wide-bandgap semiconductor devices
WO2010035269A3 (en) Integrated solar powered device
WO2010009716A3 (de) Strahlungsemittierende vorrichtung und verfahren zur herstellung einer strahlungsemittierenden vorrichtung
WO2008156294A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2007041007A3 (en) Magnetic tunnel junction temperature sensors
WO2007084811A3 (en) Embedded assembly including moveable element and antenna element
WO2008027822A3 (en) Position estimation method and related device
WO2006094241A3 (en) Thin-film device comprising an oxide semiconductor and method of selective annealing a blanket coated oxide semiconductor layer
WO2007051994A8 (en) Nanoparticle and nanocomposite films
WO2011090852A3 (en) Through silicon via lithographic alignment and registration
EP2120260A3 (en) Semiconductor unit with temperature sensor

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880108653.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08832925

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009534360

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12678942

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08832925

Country of ref document: EP

Kind code of ref document: A1