WO2009041465A1 - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor Download PDF

Info

Publication number
WO2009041465A1
WO2009041465A1 PCT/JP2008/067241 JP2008067241W WO2009041465A1 WO 2009041465 A1 WO2009041465 A1 WO 2009041465A1 JP 2008067241 W JP2008067241 W JP 2008067241W WO 2009041465 A1 WO2009041465 A1 WO 2009041465A1
Authority
WO
WIPO (PCT)
Prior art keywords
pressure sensor
semiconductor pressure
silicon substrate
cavity
substrate
Prior art date
Application number
PCT/JP2008/067241
Other languages
French (fr)
Japanese (ja)
Inventor
Teruo Igarashi
Tetsuya Fukuda
Hiroyuki Morioka
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Publication of WO2009041465A1 publication Critical patent/WO2009041465A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

Provided is a semiconductor pressure sensor having high withstand voltage limit of a diaphragm. In a semiconductor pressure sensor, a cavity (20) is formed on a second silicon substrate (12) of an SOI substrate (10), a diaphragm (21) is formed of a first silicon substrate (14), and a base substrate (31) is bonded to the second silicon substrate (12) whereupon the cavity (20) is formed. On the bonding interface between the second silicon substrate (12) whereupon the cavity (20) is formed and the base substrate (31), a gap is arranged by forming a taper surface (13b).
PCT/JP2008/067241 2007-09-25 2008-09-25 Semiconductor pressure sensor WO2009041465A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007247088A JP2010281570A (en) 2007-09-25 2007-09-25 Semiconductor pressure sensor
JP2007-247088 2007-09-25

Publications (1)

Publication Number Publication Date
WO2009041465A1 true WO2009041465A1 (en) 2009-04-02

Family

ID=40511348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067241 WO2009041465A1 (en) 2007-09-25 2008-09-25 Semiconductor pressure sensor

Country Status (2)

Country Link
JP (1) JP2010281570A (en)
WO (1) WO2009041465A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435821B2 (en) 2010-06-18 2013-05-07 General Electric Company Sensor and method for fabricating the same
US8569851B2 (en) 2010-06-18 2013-10-29 General Electric Company Sensor and method for fabricating the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5516874B2 (en) * 2010-04-30 2014-06-11 栗田工業株式会社 Water treatment method and ultrapure water production method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252952U (en) * 1985-09-24 1987-04-02
JPS6451844U (en) * 1987-09-28 1989-03-30
JPH09101219A (en) * 1995-10-06 1997-04-15 Toyota Motor Corp Pressure sensor
JPH11304612A (en) * 1998-04-24 1999-11-05 Mitsubishi Electric Corp Semiconductor pressure detector
JP2001358345A (en) * 2000-06-13 2001-12-26 Denso Corp Manufacturing method of semiconductor pressure sensor
JP2005221454A (en) * 2004-02-09 2005-08-18 Denso Corp Pressure sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252952U (en) * 1985-09-24 1987-04-02
JPS6451844U (en) * 1987-09-28 1989-03-30
JPH09101219A (en) * 1995-10-06 1997-04-15 Toyota Motor Corp Pressure sensor
JPH11304612A (en) * 1998-04-24 1999-11-05 Mitsubishi Electric Corp Semiconductor pressure detector
JP2001358345A (en) * 2000-06-13 2001-12-26 Denso Corp Manufacturing method of semiconductor pressure sensor
JP2005221454A (en) * 2004-02-09 2005-08-18 Denso Corp Pressure sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435821B2 (en) 2010-06-18 2013-05-07 General Electric Company Sensor and method for fabricating the same
US8569851B2 (en) 2010-06-18 2013-10-29 General Electric Company Sensor and method for fabricating the same

Also Published As

Publication number Publication date
JP2010281570A (en) 2010-12-16

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