FI20106359A - Method of producing an ultrasonic sensor and sensor structure - Google Patents

Method of producing an ultrasonic sensor and sensor structure Download PDF

Info

Publication number
FI20106359A
FI20106359A FI20106359A FI20106359A FI20106359A FI 20106359 A FI20106359 A FI 20106359A FI 20106359 A FI20106359 A FI 20106359A FI 20106359 A FI20106359 A FI 20106359A FI 20106359 A FI20106359 A FI 20106359A
Authority
FI
Finland
Prior art keywords
wafer
sensor
poly
producing
ultrasound
Prior art date
Application number
FI20106359A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20106359A0 (en
Inventor
Jaakko Saarilahti
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20106359A priority Critical patent/FI20106359A/en
Publication of FI20106359A0 publication Critical patent/FI20106359A0/en
Priority to PCT/FI2011/051083 priority patent/WO2012085335A1/en
Publication of FI20106359A publication Critical patent/FI20106359A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H15/00—Measuring mechanical or acoustic impedance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H9/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
    • G01H9/008—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means by using ultrasonic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
    • G01L11/04—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by acoustic means
    • G01L11/06—Ultrasonic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Micromachines (AREA)

Abstract

The invention relates to a method for manufacturing an ultrasound sensor(1) comprising the steps for forming by conventional silicon technology a first wafer (111, device wafer) including at least one ultrasound transducer (200) and an ultrasound cavity (4). In accordance with the invention it includes following steps: connecting to the first wafer (111) a second wafer (112) including a substrate (108) and a poly-Silayer (201), the second wafer (112) is connected to the first wafer (111) such that the poly-Si layer (201) forms a connecting surface, and the substrate (109) of the second wafer (112) is etched away in the area of the cavity (4) in order to form a sensor diaphragm (201) of the poly-Silayer (111).
FI20106359A 2010-12-21 2010-12-21 Method of producing an ultrasonic sensor and sensor structure FI20106359A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20106359A FI20106359A (en) 2010-12-21 2010-12-21 Method of producing an ultrasonic sensor and sensor structure
PCT/FI2011/051083 WO2012085335A1 (en) 2010-12-21 2011-12-07 Method for manufacturing an ultrasonic sensor and a sensor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20106359A FI20106359A (en) 2010-12-21 2010-12-21 Method of producing an ultrasonic sensor and sensor structure

Publications (2)

Publication Number Publication Date
FI20106359A0 FI20106359A0 (en) 2010-12-21
FI20106359A true FI20106359A (en) 2012-06-22

Family

ID=43415049

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20106359A FI20106359A (en) 2010-12-21 2010-12-21 Method of producing an ultrasonic sensor and sensor structure

Country Status (2)

Country Link
FI (1) FI20106359A (en)
WO (1) WO2012085335A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6338499B2 (en) * 2014-09-24 2018-06-06 三菱電機株式会社 Foreign matter adhesion detection device and foreign matter adhesion detection method
FI128447B (en) 2016-04-26 2020-05-15 Teknologian Tutkimuskeskus Vtt Oy Apparatus associated with analysis of thin film layer and manufacturing method thereof
GB2561613B (en) * 2017-04-21 2019-05-08 The Technology Partnership Plc Acoustic Sensor
WO2020072938A1 (en) 2018-10-05 2020-04-09 Knowles Electronics, Llc Methods of forming mems diaphragms including corrugations
WO2020072920A1 (en) 2018-10-05 2020-04-09 Knowles Electronics, Llc Microphone device with ingress protection
WO2020072904A1 (en) 2018-10-05 2020-04-09 Knowles Electronics, Llc Acoustic transducers with a low pressure zone and diaphragms having enhanced compliance
CN112763052B (en) * 2020-12-16 2022-04-08 华中科技大学 Broadband acoustic wave sensor for anti-electronic monitoring
US11528546B2 (en) 2021-04-05 2022-12-13 Knowles Electronics, Llc Sealed vacuum MEMS die
US11540048B2 (en) 2021-04-16 2022-12-27 Knowles Electronics, Llc Reduced noise MEMS device with force feedback
FI20215462A1 (en) 2021-04-20 2022-10-21 Teknologian Tutkimuskeskus Vtt Oy Ultrasound sensor apparatus and method of transmitting of ultrasound
US11649161B2 (en) 2021-07-26 2023-05-16 Knowles Electronics, Llc Diaphragm assembly with non-uniform pillar distribution
US11772961B2 (en) 2021-08-26 2023-10-03 Knowles Electronics, Llc MEMS device with perimeter barometric relief pierce
US11780726B2 (en) 2021-11-03 2023-10-10 Knowles Electronics, Llc Dual-diaphragm assembly having center constraint
CN114630236A (en) * 2022-02-28 2022-06-14 歌尔微电子股份有限公司 Vibration sensor and electronic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7489593B2 (en) * 2004-11-30 2009-02-10 Vermon Electrostatic membranes for sensors, ultrasonic transducers incorporating such membranes, and manufacturing methods therefor
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
FI20075879A0 (en) * 2007-12-05 2007-12-05 Valtion Teknillinen Apparatus for measuring pressure, variation in sound pressure, magnetic field, acceleration, vibration and gas composition

Also Published As

Publication number Publication date
FI20106359A0 (en) 2010-12-21
WO2012085335A1 (en) 2012-06-28

Similar Documents

Publication Publication Date Title
FI20106359A0 (en) Method of producing an ultrasonic sensor and sensor structure
WO2007079454A3 (en) Pressure sensor with silicon frit bonded cap
WO2010134302A3 (en) Method for manufacturing a capacitive electromechanical transducer
EP2505548A3 (en) Micromechanical sound transducer having a membrane support with tapered surface
EP2384026A3 (en) Acoustic sensor and method of manufacturing the same
EP1837087A3 (en) Ultrasonic transducer, ultrasonic probe and method for fabricating the same
WO2010032156A3 (en) Capacitive micromachined ultrasound transducer
JP2011124973A5 (en)
WO2009006515A3 (en) Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
EP1860417A3 (en) A pressure sensor having a chamber and a method for fabricating the same
WO2012001659A3 (en) Methods for in-situ passivation of silicon-on-insulator wafers
EP2441530A3 (en) Electromechanical transducer and method of manufacturing the same
EP2582155A3 (en) Microphone unit and method of manufacturing microphone unit
TW200701817A (en) Method for producing polymeric capacitive ultrasonic transducer
EP2599747A3 (en) Method of manufacturing resonant transducer
CN102238463B (en) Method and chip for integrating silicon microphone device with IC (integrated circuit) single chip
MY177541A (en) Micro-electromechanical sound transducer with sound energy-reflecting interlayer
EP2202526A3 (en) Mems sensor and mems sensor manufacture method
JP2010172181A (en) Electromechanical transducer and production method of same
EP2568269A3 (en) Resonant pressure sensor and method of manufacturing the same
CN103439032B (en) Processing method of silicon micro resonator
CN107438213B (en) Hydrophone and manufacturing process thereof
ATE466456T1 (en) PRODUCTION OF SILICON MICROPHONES
EP2838197A3 (en) Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer
JP2013070112A5 (en)

Legal Events

Date Code Title Description
PC Transfer of assignment of patent

Owner name: TEKNOLOGIAN TUTKIMUSKESKUS VTT

Free format text: TEKNOLOGIAN TUTKIMUSKESKUS VTT

FD Application lapsed