WO2009040973A1 - 半導体製造設備用のガス供給装置 - Google Patents

半導体製造設備用のガス供給装置 Download PDF

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Publication number
WO2009040973A1
WO2009040973A1 PCT/JP2008/001920 JP2008001920W WO2009040973A1 WO 2009040973 A1 WO2009040973 A1 WO 2009040973A1 JP 2008001920 W JP2008001920 W JP 2008001920W WO 2009040973 A1 WO2009040973 A1 WO 2009040973A1
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WO
WIPO (PCT)
Prior art keywords
gas feeding
gas
feeding line
pressure
vent
Prior art date
Application number
PCT/JP2008/001920
Other languages
English (en)
French (fr)
Inventor
Kouji Nishino
Ryousuke Dohi
Masaaki Nagase
Kaoru Hirata
Katsuyuki Sugita
Nobukazu Ikeda
Original Assignee
Fujikin Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikin Incorporated filed Critical Fujikin Incorporated
Priority to CN2008801094723A priority Critical patent/CN101809712B/zh
Priority to US12/680,159 priority patent/US8601976B2/en
Priority to KR1020107001282A priority patent/KR101134392B1/ko
Publication of WO2009040973A1 publication Critical patent/WO2009040973A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • G05D7/0664—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging flows from a single flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　本発明は、反応炉への原料ガスを供給するメインガス供給ラインと前記原料の排気をするべントガス供給ラインとを備え、両ガスラインの中間部に複数のガス供給機構を配設して成る有機金属気相成長法による半導体製造設備用のガス供給装置に於いて、圧力式流量制御装置のオリフィス下流側で検出したメインガス供給ラインのガスＰ10とベントガス供給ラインの圧力Ｐ2とを対比し、原料ガスの供給切換時にメインガス供給ラインとベントガス供給ライン間に両者の圧力差が零となるように、前記ベントガス供給ラインの入口側当該圧力制御装置により圧力調整する。
PCT/JP2008/001920 2007-09-25 2008-07-17 半導体製造設備用のガス供給装置 WO2009040973A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801094723A CN101809712B (zh) 2007-09-25 2008-07-17 半导体制造设备用的气体供给装置
US12/680,159 US8601976B2 (en) 2007-09-25 2008-07-17 Gas supply system for semiconductor manufacturing facilities
KR1020107001282A KR101134392B1 (ko) 2007-09-25 2008-07-17 반도체 제조 설비용의 가스 공급 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-246558 2007-09-25
JP2007246558A JP5372353B2 (ja) 2007-09-25 2007-09-25 半導体製造装置用ガス供給装置

Publications (1)

Publication Number Publication Date
WO2009040973A1 true WO2009040973A1 (ja) 2009-04-02

Family

ID=40510885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001920 WO2009040973A1 (ja) 2007-09-25 2008-07-17 半導体製造設備用のガス供給装置

Country Status (6)

Country Link
US (1) US8601976B2 (ja)
JP (1) JP5372353B2 (ja)
KR (1) KR101134392B1 (ja)
CN (1) CN101809712B (ja)
TW (1) TWI452610B (ja)
WO (1) WO2009040973A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102853263A (zh) * 2012-08-31 2013-01-02 成都爱德工程有限公司 特气柜控制系统及特气柜中钢瓶更换的检测方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9127361B2 (en) * 2009-12-07 2015-09-08 Mks Instruments, Inc. Methods of and apparatus for controlling pressure in multiple zones of a process tool
WO2012153455A1 (ja) 2011-05-10 2012-11-15 株式会社フジキン 流量モニタ付圧力式流量制御装置
JP5755958B2 (ja) 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
US9302291B2 (en) 2011-08-05 2016-04-05 3M Innovative Properties Company Systems and methods for processing vapor
JP5647083B2 (ja) * 2011-09-06 2014-12-24 株式会社フジキン 原料濃度検出機構を備えた原料気化供給装置
JP5665794B2 (ja) * 2012-04-27 2015-02-04 株式会社フジキン 半導体製造装置のガス分流供給装置
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
KR20160012302A (ko) * 2014-07-23 2016-02-03 삼성전자주식회사 기판 제조 방법 및 그에 사용되는 기판 제조 장치
US9951423B2 (en) * 2014-10-07 2018-04-24 Lam Research Corporation Systems and methods for measuring entrained vapor
US9904299B2 (en) * 2015-04-08 2018-02-27 Tokyo Electron Limited Gas supply control method
JP6600568B2 (ja) * 2015-09-16 2019-10-30 東京エレクトロン株式会社 流量制御器の出力流量を求める方法
JP6748586B2 (ja) * 2016-07-11 2020-09-02 東京エレクトロン株式会社 ガス供給システム、基板処理システム及びガス供給方法
US10983537B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
US10649471B2 (en) * 2018-02-02 2020-05-12 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with isolation valves
CN110289231B (zh) * 2019-06-26 2020-06-12 英特尔半导体(大连)有限公司 用于半导体制造设备的气体管路控制装置
US11618968B2 (en) * 2020-02-07 2023-04-04 Akoustis, Inc. Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
US12102010B2 (en) 2020-03-05 2024-09-24 Akoustis, Inc. Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
JP2023080611A (ja) * 2021-11-30 2023-06-09 株式会社堀場エステック 流量制御装置、流量制御方法、及び、流量制御装置用プログラム
US20230235459A1 (en) * 2022-01-24 2023-07-27 Akoustis, Inc. Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd reactors with temperature-controlled injector columns and methods of forming single crystal piezoelectric layers using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09249500A (ja) * 1996-03-13 1997-09-22 Nec Corp 気相成長装置
JPH11212653A (ja) * 1998-01-21 1999-08-06 Fujikin Inc 流体供給装置
JP2003195948A (ja) * 2001-12-28 2003-07-11 Tadahiro Omi 改良型圧力式流量制御装置

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US5261961A (en) * 1985-07-23 1993-11-16 Canon Kabushiki Kaisha Device for forming deposited film
US5769950A (en) * 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US6077718A (en) * 1985-07-23 2000-06-20 Canon Kabushiki Kaisha Method for forming deposited film
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5200388A (en) * 1988-05-13 1993-04-06 Oki Electric Industry Co., Ltd. Metalorganic chemical vapor deposition of superconducting films
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
DE3833232A1 (de) * 1988-09-30 1990-04-05 Leybold Ag Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JPH08288226A (ja) 1995-04-18 1996-11-01 Furukawa Electric Co Ltd:The 有機金属気相成長装置
JP3291161B2 (ja) 1995-06-12 2002-06-10 株式会社フジキン 圧力式流量制御装置
TW342429B (en) * 1995-07-14 1998-10-11 Tadahiro Omi Fluid control system and valve used in it
JP3442604B2 (ja) * 1996-02-15 2003-09-02 株式会社フジキン 混合ガスの供給方法及び混合ガス供給装置並びにこれらを備えた半導体製造装置
US6435229B1 (en) * 1997-07-11 2002-08-20 Advanced Technology Materials, Inc. Bulk chemical delivery system
US5944049A (en) * 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
US6007330A (en) * 1998-03-12 1999-12-28 Cosmos Factory, Inc. Liquid precursor delivery system
JP2000306884A (ja) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US7011710B2 (en) * 2000-04-10 2006-03-14 Applied Materials Inc. Concentration profile on demand gas delivery system (individual divert delivery system)
US6645302B2 (en) * 2000-04-26 2003-11-11 Showa Denko Kabushiki Kaisha Vapor phase deposition system
JP2002129337A (ja) * 2000-10-24 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
US6938638B2 (en) * 2000-12-28 2005-09-06 Kabushiki Kaisha Toshiba Gas circulating-processing apparatus
JP4335469B2 (ja) * 2001-03-22 2009-09-30 株式会社荏原製作所 真空排気装置のガス循環量調整方法及び装置
EP1466034A1 (en) * 2002-01-17 2004-10-13 Sundew Technologies, LLC Ald apparatus and method
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
KR100439948B1 (ko) * 2002-04-19 2004-07-12 주식회사 아이피에스 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7296532B2 (en) * 2002-12-18 2007-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Bypass gas feed system and method to improve reactant gas flow and film deposition
US7156380B2 (en) * 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
JP2005223211A (ja) 2004-02-06 2005-08-18 Sony Corp 有機金属気相成長装置
JP2005322668A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
FR2878913B1 (fr) * 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
US7968437B2 (en) * 2005-11-18 2011-06-28 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
US20070175392A1 (en) * 2006-01-27 2007-08-02 American Air Liquide, Inc. Multiple precursor dispensing apparatus
JP4895167B2 (ja) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
US8074677B2 (en) * 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7846497B2 (en) * 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7775236B2 (en) * 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8235001B2 (en) * 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP4472008B2 (ja) * 2007-08-30 2010-06-02 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP4987812B2 (ja) * 2007-09-06 2012-07-25 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20090214777A1 (en) * 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
US8151814B2 (en) * 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
JP2010267925A (ja) * 2009-05-18 2010-11-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5270476B2 (ja) * 2009-07-07 2013-08-21 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US20120244685A1 (en) * 2011-03-24 2012-09-27 Nuflare Technology, Inc. Manufacturing Apparatus and Method for Semiconductor Device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09249500A (ja) * 1996-03-13 1997-09-22 Nec Corp 気相成長装置
JPH11212653A (ja) * 1998-01-21 1999-08-06 Fujikin Inc 流体供給装置
JP2003195948A (ja) * 2001-12-28 2003-07-11 Tadahiro Omi 改良型圧力式流量制御装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102853263A (zh) * 2012-08-31 2013-01-02 成都爱德工程有限公司 特气柜控制系统及特气柜中钢瓶更换的检测方法

Also Published As

Publication number Publication date
KR20100032910A (ko) 2010-03-26
CN101809712B (zh) 2013-04-24
US20100192854A1 (en) 2010-08-05
KR101134392B1 (ko) 2012-04-09
US8601976B2 (en) 2013-12-10
TW200933704A (en) 2009-08-01
TWI452610B (zh) 2014-09-11
JP2009076807A (ja) 2009-04-09
JP5372353B2 (ja) 2013-12-18
CN101809712A (zh) 2010-08-18

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