WO2009039804A3 - Strahlungsemittierende bauelemente zum erzeugen von linear polarisiertem licht - Google Patents

Strahlungsemittierende bauelemente zum erzeugen von linear polarisiertem licht Download PDF

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Publication number
WO2009039804A3
WO2009039804A3 PCT/DE2008/001301 DE2008001301W WO2009039804A3 WO 2009039804 A3 WO2009039804 A3 WO 2009039804A3 DE 2008001301 W DE2008001301 W DE 2008001301W WO 2009039804 A3 WO2009039804 A3 WO 2009039804A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
polarized light
linearly polarized
emitting components
producing linearly
Prior art date
Application number
PCT/DE2008/001301
Other languages
English (en)
French (fr)
Other versions
WO2009039804A2 (de
Inventor
Reiner Windisch
Karl Engl
Christopher Wiesmann
Original Assignee
Osram Opto Semiconductors Gmbh
Reiner Windisch
Karl Engl
Christopher Wiesmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Reiner Windisch, Karl Engl, Christopher Wiesmann filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2009039804A2 publication Critical patent/WO2009039804A2/de
Publication of WO2009039804A3 publication Critical patent/WO2009039804A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

Es wird ein strahlungsemittierendes Bauelement (B) angegeben mit einem auf einem Halbleitermaterial basierenden Schichtstapel, der eine aktive Schichtfolge (A, C1, C2) zur Erzeugung von elektromagnetischer Strahlung aufweist, dadurch gekennzeichnet, dass: auf einer letzten Schicht (C2) des Schichtenstapels in Abstrahlrichtung (e) eine Vielzahl von Metallflächen (M) aufgebracht sind, die Metallflächen (M) in einer ersten Richtung (d1) und in einer davon unterschiedlichen zweiten Richtung (d2) unterschiedliche Abmessungen (a1, a2) aufweisen, und die Metallflächen (M) periodisch in der ersten Richtung (d1) und periodisch in der zweiten Richtung (d2) angeordnet sind.
PCT/DE2008/001301 2007-09-28 2008-08-04 Strahlungsemittierende bauelemente zum erzeugen von linear polarisiertem licht WO2009039804A2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046517.5 2007-09-28
DE102007046517 2007-09-28
DE102007059621.0 2007-12-12
DE102007059621A DE102007059621A1 (de) 2007-09-28 2007-12-12 Verfahren zum Erzeugen von linear polarisiertem Licht und strahlungsemittierende Bauelemente

Publications (2)

Publication Number Publication Date
WO2009039804A2 WO2009039804A2 (de) 2009-04-02
WO2009039804A3 true WO2009039804A3 (de) 2009-06-25

Family

ID=40384479

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001301 WO2009039804A2 (de) 2007-09-28 2008-08-04 Strahlungsemittierende bauelemente zum erzeugen von linear polarisiertem licht

Country Status (3)

Country Link
DE (1) DE102007059621A1 (de)
TW (1) TW200916856A (de)
WO (1) WO2009039804A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101667815B1 (ko) 2010-02-18 2016-10-19 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2012068486A (ja) * 2010-09-24 2012-04-05 Sony Corp 表示装置、光学部材及び光学部材の製造方法
CN104155794B (zh) * 2014-08-13 2017-07-21 深圳市华星光电技术有限公司 偏光板及显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0442002A1 (de) * 1990-02-13 1991-08-21 Siemens Aktiengesellschaft Strahlungserzeugendes Halbleiterbauelement
WO1994013044A1 (de) * 1992-12-03 1994-06-09 Siemens Aktiengesellschaft Abstimmbare oberflächenemittierende laserdiode
DE10107472A1 (de) * 2000-05-23 2001-12-06 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik und Verfahren zu dessen Herstellung
WO2002073753A2 (en) * 2001-03-09 2002-09-19 Alight Technologies A/S Mode control using transversal bandgap structure in vcsels
US6507595B1 (en) * 1999-11-22 2003-01-14 Avalon Photonics Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
WO2005091388A1 (en) * 2004-03-18 2005-09-29 Matsushita Electric Industrial Co., Ltd. Nitride based led with a p-type injection region

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Publication number Priority date Publication date Assignee Title
US6040936A (en) * 1998-10-08 2000-03-21 Nec Research Institute, Inc. Optical transmission control apparatus utilizing metal films perforated with subwavelength-diameter holes
US6836494B1 (en) * 2000-05-31 2004-12-28 Lucent Technologies Inc. Structure and method for processing optical energy
WO2004038463A1 (ja) * 2002-10-25 2004-05-06 Nitto Denko Corporation 偏光子、その製造方法、光学フィルムおよび画像表示装置
WO2005017570A2 (en) * 2003-08-06 2005-02-24 University Of Pittsburgh Surface plasmon-enhanced nano-optic devices and methods of making same
US7292614B2 (en) * 2003-09-23 2007-11-06 Eastman Kodak Company Organic laser and liquid crystal display
DE102004005445A1 (de) * 2004-02-04 2005-08-25 Robert Bosch Gmbh Sensor zur Detektion eines Fluids
KR100778887B1 (ko) * 2006-01-18 2007-11-22 재단법인서울대학교산학협력재단 형태 공진 테라파 또는 적외선 필터

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0442002A1 (de) * 1990-02-13 1991-08-21 Siemens Aktiengesellschaft Strahlungserzeugendes Halbleiterbauelement
WO1994013044A1 (de) * 1992-12-03 1994-06-09 Siemens Aktiengesellschaft Abstimmbare oberflächenemittierende laserdiode
US6507595B1 (en) * 1999-11-22 2003-01-14 Avalon Photonics Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
DE10107472A1 (de) * 2000-05-23 2001-12-06 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik und Verfahren zu dessen Herstellung
WO2002073753A2 (en) * 2001-03-09 2002-09-19 Alight Technologies A/S Mode control using transversal bandgap structure in vcsels
WO2005091388A1 (en) * 2004-03-18 2005-09-29 Matsushita Electric Industrial Co., Ltd. Nitride based led with a p-type injection region

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KOCK A: "STRONGLY DIRECTIONAL EMISSION FROM ALGAAS/GAAS LIGHT-EMITTING DIODES", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 57, no. 22, 26 November 1990 (1990-11-26), pages 2327 - 2329, XP000216284, ISSN: 0003-6951 *
LIU Y ET AL: "Fluorescence transmission through 1-D and 2-D periodic metal films", OPTICS EXPRESS, OPTICAL SOCIETY OF AMERICA, WASHINGTON, DC, US, vol. 12, no. 16, 9 August 2004 (2004-08-09), pages 3686 - 3693, XP002436189, ISSN: 1094-4087 *

Also Published As

Publication number Publication date
WO2009039804A2 (de) 2009-04-02
DE102007059621A1 (de) 2009-04-02
TW200916856A (en) 2009-04-16

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