WO2009039354A3 - Miroirs de bragg diélectriques hybrides organiques-inorganiques et leurs procédés d'utilisation - Google Patents

Miroirs de bragg diélectriques hybrides organiques-inorganiques et leurs procédés d'utilisation Download PDF

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Publication number
WO2009039354A3
WO2009039354A3 PCT/US2008/076989 US2008076989W WO2009039354A3 WO 2009039354 A3 WO2009039354 A3 WO 2009039354A3 US 2008076989 W US2008076989 W US 2008076989W WO 2009039354 A3 WO2009039354 A3 WO 2009039354A3
Authority
WO
WIPO (PCT)
Prior art keywords
certain embodiments
organic
hybrid
tunable
bragg reflector
Prior art date
Application number
PCT/US2008/076989
Other languages
English (en)
Other versions
WO2009039354A2 (fr
Inventor
Karen K Gleason
Mustafa Karaman
Original Assignee
Massachusetts Inst Technology
Karen K Gleason
Mustafa Karaman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology, Karen K Gleason, Mustafa Karaman filed Critical Massachusetts Inst Technology
Publication of WO2009039354A2 publication Critical patent/WO2009039354A2/fr
Publication of WO2009039354A3 publication Critical patent/WO2009039354A3/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
    • G02B5/0841—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising organic materials, e.g. polymers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne l'empilement précis de films minces multicouches hybrides organiques et inorganiques à l'échelle nanométrique dans un procédé de dépôt en phase vapeur à une seule étape et, en particulier un réflecteur de Bragg fabriqué grâce à ce procédé. Dans certains modes de réalisation, le réflecteur de Bragg comprend une pluralité de couches organiques et inorganiques alternées sur un substrat. Dans certains modes de réalisation, les réflecteurs de Bragg sont flexibles, accordables et présentent une commutation rapide. Dans certains modes de réalisation, les films minces de l'invention sont constitués de couches d'oxyde de titane et de couches de poly(méthacrylate de 2-hydroxyéthyle) en alternance. Dans certains modes de réalisation, la réponse biomimétique rapide et réversible des multicouches hybrides avec des bandes de réflectances accordables a montré la performance optique supérieure des structures. Dans certains modes de réalisation, la flexibilité et la durabilité des films permettent de les utiliser dans différents domaines, comme les systèmes de détection de vapeur organique.
PCT/US2008/076989 2007-09-19 2008-09-19 Miroirs de bragg diélectriques hybrides organiques-inorganiques et leurs procédés d'utilisation WO2009039354A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99435007P 2007-09-19 2007-09-19
US60/994,350 2007-09-19

Publications (2)

Publication Number Publication Date
WO2009039354A2 WO2009039354A2 (fr) 2009-03-26
WO2009039354A3 true WO2009039354A3 (fr) 2009-07-16

Family

ID=40468781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/076989 WO2009039354A2 (fr) 2007-09-19 2008-09-19 Miroirs de bragg diélectriques hybrides organiques-inorganiques et leurs procédés d'utilisation

Country Status (1)

Country Link
WO (1) WO2009039354A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102360A1 (de) * 2014-02-24 2015-08-27 Osram Opto Semiconductors Gmbh Laserdiodenchip
WO2017046742A1 (fr) * 2015-09-18 2017-03-23 Sabic Global Technologies B.V. Réflecteur de bragg souple
EP3921612A4 (fr) 2019-02-06 2022-11-02 California Institute of Technology Spectromètre hyperspectral compact dans l'infrarouge moyen
US11313722B2 (en) 2019-11-08 2022-04-26 California Institute Of Technology Infrared spectrometer having dielectric-polymer-based spectral filter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547898A (en) * 1994-07-05 1996-08-20 Motorola Method for p-doping of a light-emitting device
US6137819A (en) * 1996-03-13 2000-10-24 Sharp Kabushiki Kaisha Optoelectronic semiconductor device
US6300612B1 (en) * 1998-02-02 2001-10-09 Uniax Corporation Image sensors made from organic semiconductors
US6756732B1 (en) * 1999-11-26 2004-06-29 Cambridge University Technical Services, Ltd. Distributed bragg reflector, organic light emitting element, and multicolour light emitting device
US20050243886A1 (en) * 2004-04-30 2005-11-03 Honeywell International Inc. Carrier bonded 1550 nm VCSEL with InP substrate removal

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547898A (en) * 1994-07-05 1996-08-20 Motorola Method for p-doping of a light-emitting device
US6137819A (en) * 1996-03-13 2000-10-24 Sharp Kabushiki Kaisha Optoelectronic semiconductor device
US6300612B1 (en) * 1998-02-02 2001-10-09 Uniax Corporation Image sensors made from organic semiconductors
US6756732B1 (en) * 1999-11-26 2004-06-29 Cambridge University Technical Services, Ltd. Distributed bragg reflector, organic light emitting element, and multicolour light emitting device
US20050243886A1 (en) * 2004-04-30 2005-11-03 Honeywell International Inc. Carrier bonded 1550 nm VCSEL with InP substrate removal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VALENTINI ET AL.: "Organic-inorganic dual-wavelength Bragg reflector", ELECTRONICS LETTERS, vol. 35, no. 11, 27 May 1999 (1999-05-27), pages 896 - 897 *

Also Published As

Publication number Publication date
WO2009039354A2 (fr) 2009-03-26

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