WO2009037909A1 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2009037909A1
WO2009037909A1 PCT/JP2008/062288 JP2008062288W WO2009037909A1 WO 2009037909 A1 WO2009037909 A1 WO 2009037909A1 JP 2008062288 W JP2008062288 W JP 2008062288W WO 2009037909 A1 WO2009037909 A1 WO 2009037909A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetization
regions
random access
access memory
magnetic random
Prior art date
Application number
PCT/JP2008/062288
Other languages
English (en)
French (fr)
Inventor
Tetsuhiro Suzuki
Shunsuke Fukami
Kiyokazu Nagahara
Norikazu Ohshima
Nobuyuki Ishiwata
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009533085A priority Critical patent/JP5339212B2/ja
Publication of WO2009037909A1 publication Critical patent/WO2009037909A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

　磁気ランダムアクセスメモリは、磁気異方性をもつ強磁性層である磁化記録層１０を具備する。磁化記録層１０は、実質的に磁化の固定された二つの磁化固定領域１１ａ、１１ｂと、反転可能な磁化を有する複数の磁化反転領域１３ａ、１３ｂとを備える。二つの磁化固定領域１１ａ、１１ｂの各々は、二つの磁化固定領域１１ａ、１１ｂの他方及び複数の磁化反転領域１３ａ、１３ｂの各々に、複数の磁化反転領域１３ａ、１３ｂの他のものを経由せずに接続されている。複数の磁化反転領域１３ａ、１３ｂの各々は、一端において、二つの磁化固定領域１１ａ、１１ｂ及び複数の磁化反転領域１３ａ、１３ｂの他のものと接続していない。
PCT/JP2008/062288 2007-09-19 2008-07-07 磁気ランダムアクセスメモリ WO2009037909A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009533085A JP5339212B2 (ja) 2007-09-19 2008-07-07 磁気ランダムアクセスメモリ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-242673 2007-09-19
JP2007242673 2007-09-19

Publications (1)

Publication Number Publication Date
WO2009037909A1 true WO2009037909A1 (ja) 2009-03-26

Family

ID=40467733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062288 WO2009037909A1 (ja) 2007-09-19 2008-07-07 磁気ランダムアクセスメモリ

Country Status (2)

Country Link
JP (1) JP5339212B2 (ja)
WO (1) WO2009037909A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007201059A (ja) * 2006-01-25 2007-08-09 Toshiba Corp 磁気素子、磁気記録装置及び書き込み方法
WO2007119446A1 (ja) * 2006-03-24 2007-10-25 Nec Corporation Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007201059A (ja) * 2006-01-25 2007-08-09 Toshiba Corp 磁気素子、磁気記録装置及び書き込み方法
WO2007119446A1 (ja) * 2006-03-24 2007-10-25 Nec Corporation Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法

Also Published As

Publication number Publication date
JPWO2009037909A1 (ja) 2011-01-06
JP5339212B2 (ja) 2013-11-13

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