WO2009031001A3 - Vertical igbt and method of manufacturing the same - Google Patents

Vertical igbt and method of manufacturing the same Download PDF

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Publication number
WO2009031001A3
WO2009031001A3 PCT/IB2008/002268 IB2008002268W WO2009031001A3 WO 2009031001 A3 WO2009031001 A3 WO 2009031001A3 IB 2008002268 W IB2008002268 W IB 2008002268W WO 2009031001 A3 WO2009031001 A3 WO 2009031001A3
Authority
WO
WIPO (PCT)
Prior art keywords
type
buffer layer
vertical igbt
manufacturing
layer
Prior art date
Application number
PCT/IB2008/002268
Other languages
French (fr)
Other versions
WO2009031001A2 (en
Inventor
Takeshi Fukami
Original Assignee
Toyota Motor Co Ltd
Takeshi Fukami
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Co Ltd, Takeshi Fukami filed Critical Toyota Motor Co Ltd
Publication of WO2009031001A2 publication Critical patent/WO2009031001A2/en
Publication of WO2009031001A3 publication Critical patent/WO2009031001A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A semiconductor device 100, a vertical IGBT, includes a collector electrode 2, a p+-type collector layer 4, an n+-type buffer layer 6, an n--type drift layer 8, a p--type body region 10, an n+-type emitter region 12, a gate electrode 18, and an emitter electrode 14. The semiconductor device 100 includes uneven portions 32 in a back surface, each of which includes a recessed portion 28 and a protrusion portion 30. A gap L2 between bottom faces of the adjacent recessed portions 28 is 70% of or smaller than a thickness L1 of the buffer layer 6. Therefore, the buffer layer 6 is continuously formed, at a certain depth from the bottom faces of the recessed portions.
PCT/IB2008/002268 2007-09-04 2008-09-02 Vertical igbt and method of manufacturing the same WO2009031001A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-229194 2007-09-04
JP2007229194A JP2009064825A (en) 2007-09-04 2007-09-04 Semiconductor device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
WO2009031001A2 WO2009031001A2 (en) 2009-03-12
WO2009031001A3 true WO2009031001A3 (en) 2009-06-04

Family

ID=40429450

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/002268 WO2009031001A2 (en) 2007-09-04 2008-09-02 Vertical igbt and method of manufacturing the same

Country Status (2)

Country Link
JP (1) JP2009064825A (en)
WO (1) WO2009031001A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102135687B1 (en) * 2013-06-27 2020-07-20 온세미컨덕터코리아 주식회사 Power semiconductor device and method of manufacturing the same
US11233141B2 (en) 2018-01-16 2022-01-25 Ipower Semiconductor Self-aligned and robust IGBT devices
US20190245070A1 (en) * 2018-02-07 2019-08-08 Ipower Semiconductor Igbt devices with 3d backside structures for field stop and reverse conduction

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10038190A1 (en) * 2000-08-04 2002-02-21 Siced Elect Dev Gmbh & Co Kg Semiconductor structure with locally thinned substrate for control of vertically flowing current through semiconductor
EP1265293A2 (en) * 2001-06-08 2002-12-11 Infineon Technologies AG Semiconductor component having pores and method of making the same
US20040082116A1 (en) * 2002-10-24 2004-04-29 Kub Francis J. Vertical conducting power semiconductor devices implemented by deep etch
DE10333556A1 (en) * 2003-07-23 2005-03-03 Infineon Technologies Ag Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode
JP2006156658A (en) * 2004-11-29 2006-06-15 Toshiba Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10038190A1 (en) * 2000-08-04 2002-02-21 Siced Elect Dev Gmbh & Co Kg Semiconductor structure with locally thinned substrate for control of vertically flowing current through semiconductor
EP1265293A2 (en) * 2001-06-08 2002-12-11 Infineon Technologies AG Semiconductor component having pores and method of making the same
US20040082116A1 (en) * 2002-10-24 2004-04-29 Kub Francis J. Vertical conducting power semiconductor devices implemented by deep etch
DE10333556A1 (en) * 2003-07-23 2005-03-03 Infineon Technologies Ag Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode
JP2006156658A (en) * 2004-11-29 2006-06-15 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
WO2009031001A2 (en) 2009-03-12
JP2009064825A (en) 2009-03-26

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