WO2009028890A2 - Chamber cover - Google Patents

Chamber cover Download PDF

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Publication number
WO2009028890A2
WO2009028890A2 PCT/KR2008/005061 KR2008005061W WO2009028890A2 WO 2009028890 A2 WO2009028890 A2 WO 2009028890A2 KR 2008005061 W KR2008005061 W KR 2008005061W WO 2009028890 A2 WO2009028890 A2 WO 2009028890A2
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
chamber cover
plate
gas
vacuum
Prior art date
Application number
PCT/KR2008/005061
Other languages
French (fr)
Other versions
WO2009028890A3 (en
Inventor
Kil Ho Jung
Kyung Jun Kim
Sang Kyun Shim
Original Assignee
Lg Innotek Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd filed Critical Lg Innotek Co., Ltd
Publication of WO2009028890A2 publication Critical patent/WO2009028890A2/en
Publication of WO2009028890A3 publication Critical patent/WO2009028890A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32467Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16Vessels
    • H01J2237/166Sealing means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • a semiconductor device is fabricated by selectively/repeatedly performing photolithography, etching, diffusing, chemical vapor deposition, ion implanting, and metal deposition processes.
  • the etching, diffusion, and chemical vapor deposition processes are performed by injecting gas in an enclosed chamber under a predetermined atmosphere so that the process gas reacts on a wafer in the enclosed chamber.
  • a vacuum leak detector is installed on most of the chambers to detect the vacuum state. Therefore, when the vacuum is released from the chamber, the vacuum leak detector detects this. However, even if the vacuum leak is detected, it is difficult to accurately find a location through which the vacuum leaks.
  • the flow flange is formed of SUS containing chrome and nickel, a weight thereof is generally over 65kg. Accordingly, it is impossible to open and close the flow flange without the help of a machine. That is, the user must open and close the flow flange with the help of the machine.
  • Embodiments provide a chamber cover.
  • Embodiments also provide a chamber cover that can be used when a vacuum state of a chamber is checked.
  • a chamber cover comprises a plate comprising metal material and one or more gas inlets formed on the plate.
  • Embodiments can provide a chamber cover.
  • Embodiments can provide a chamber cover that can be conveniently used when a vacuum state of a chamber is checked.
  • FIG. 1 is a schematic view illustrating a semiconductor fabrication apparatus used in a semiconductor fabrication process.
  • FIG. 2 is a view of a chamber cover according to an embodiment.
  • FIG. 1 is a schematic view illustrating a semiconductor fabrication apparatus used in a semiconductor fabrication process.
  • a semiconductor fabrication apparatus includes a chamber 10 in which at least one of deposition, plasma, diffusing, and chemical vapor deposition processes is performed, a gas supplying pipe 24 connected to an upper portion of the chamber 10, an air valve 26 that is installed on the gas supplying pipe 24 to supply or shut off gas, a mass flow controller 28 that is connected to the gas supplying pipe 24 at a rear end of the air valve 26 to control a flow rate of the gas, a shower head 14 that is installed on the upper portion of the chamber 10 to inject the gas into the chamber 10, a heater 16 that is installed on a lower portion of the chamber 10 to heat a wafer (not shown) to a predetermined temperature, a pumping line 18 connected to a lower end of the chamber 10, a pump 22 that is connected to the pumping line 18 to discharge the gas, and a sensor 21 and a controller 30 for detecting the vacuum leak.
  • the sensor 21 detects if the helium gas is introduced into the chamber 10 and discharged to the pumping line 18, thereby checking the vacuum leak of the chamber 10.
  • the pump 22 removes unnecessary gas remaining in the chamber 10 to vacuum the chamber 10.
  • Fig. 2 is a chamber cover according to an embodiment.
  • a chamber cover in accordance with an embodiment is designed to be temporarily used to inspect the vacuum leak state of the semiconductor fabrication apparatus.
  • the chamber cover includes a plate 40 and a gas inlet 42.
  • two or more gas inlets 42 may be provided, only one is provided in this embodiment. That is, the chamber cover is used to inspect the vacuum leak and thus it can perform its function even with only one gas inlet 42.
  • the chamber cover is separated from the chamber 10 and subsequently the flow flange including the shower head 14 and the plate 11 is coupled to the chamber 10.
  • a thickness tl of a plate 40 of the chamber cover may be 10-100 mm.
  • a tensile strength and yield strength of the plate 40 may be respectively 13-17 kgf/cm 2 and 8-12 kgf/cm 2 .
  • the plate is formed of metal material such as aluminum alloy that is relatively lighter in weight. For example, a weight of the plate may be 5-20 kg. Therefore, the user can separate the chamber cover from the chamber 10 without the help of the machine.
  • An O-ring 41 may be installed on an undersurface of the plate 40 to prevent the vacuum leak.
  • the gas inlet 42 is installed on the plate 40.
  • a vacuum converter refining (VCR) type fitting may be used as the gas inlet 42.
  • VCR vacuum converter refining
  • the chamber cover of the embodiment can be used to inspect the vacuum leak of the chamber.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Gas Exhaust Devices For Batteries (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)

Abstract

A chamber cover comprises a plate comprising metal material and one or more gas inlets formed on the plate.

Description

Description CHAMBER COVER
Technical Field
[I] The present disclosure relates to a chamber cover. Background Art
[2] A semiconductor device is fabricated by selectively/repeatedly performing photolithography, etching, diffusing, chemical vapor deposition, ion implanting, and metal deposition processes.
[3] Among the processes, the etching, diffusion, and chemical vapor deposition processes are performed by injecting gas in an enclosed chamber under a predetermined atmosphere so that the process gas reacts on a wafer in the enclosed chamber.
[4] Most of the semiconductor fabrication processes are performed under a vacuum state.
Therefore, in order to precisely perform the semiconductor fabrication processes, the vacuum state must be accurately maintained.
[5] A vacuum leak detector is installed on most of the chambers to detect the vacuum state. Therefore, when the vacuum is released from the chamber, the vacuum leak detector detects this. However, even if the vacuum leak is detected, it is difficult to accurately find a location through which the vacuum leaks.
[6] Therefore, a user must check the vacuum leak while assembling and dissembling all of the parts through which the vacuum may possibly leak. To perform this, a flow flange of the chamber, on which a shower head is attached, must be opened and closed many times.
[7] Since the flow flange is formed of SUS containing chrome and nickel, a weight thereof is generally over 65kg. Accordingly, it is impossible to open and close the flow flange without the help of a machine. That is, the user must open and close the flow flange with the help of the machine.
[8] Particularly, a variety of equipments connected to the chamber must be assembled and dissembled to open and close the chamber. This is troublesome and time consuming. Disclosure of Invention
Technical Problem
[9] Embodiments provide a chamber cover.
[10] Embodiments also provide a chamber cover that can be used when a vacuum state of a chamber is checked.
Technical Solution
[I I] In an embodiment, a chamber cover comprises a plate comprising metal material and one or more gas inlets formed on the plate.
[12] The details of one or more embodiments are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims.
Advantageous Effects
[13] Embodiments can provide a chamber cover.
[14] Embodiments can provide a chamber cover that can be conveniently used when a vacuum state of a chamber is checked.
Brief Description of the Drawings
[15] Fig. 1 is a schematic view illustrating a semiconductor fabrication apparatus used in a semiconductor fabrication process.
[16] Fig. 2 is a view of a chamber cover according to an embodiment.
Mode for the Invention
[17] Reference will now be made in detail to the embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings.
[18] Fig. 1 is a schematic view illustrating a semiconductor fabrication apparatus used in a semiconductor fabrication process.
[19] Referring to Fig. 1, a semiconductor fabrication apparatus includes a chamber 10 in which at least one of deposition, plasma, diffusing, and chemical vapor deposition processes is performed, a gas supplying pipe 24 connected to an upper portion of the chamber 10, an air valve 26 that is installed on the gas supplying pipe 24 to supply or shut off gas, a mass flow controller 28 that is connected to the gas supplying pipe 24 at a rear end of the air valve 26 to control a flow rate of the gas, a shower head 14 that is installed on the upper portion of the chamber 10 to inject the gas into the chamber 10, a heater 16 that is installed on a lower portion of the chamber 10 to heat a wafer (not shown) to a predetermined temperature, a pumping line 18 connected to a lower end of the chamber 10, a pump 22 that is connected to the pumping line 18 to discharge the gas, and a sensor 21 and a controller 30 for detecting the vacuum leak.
[20] When helium gas is supplied around the chamber 10 in a state where the interior of the chamber 10 is vacuumed, the sensor 21 detects if the helium gas is introduced into the chamber 10 and discharged to the pumping line 18, thereby checking the vacuum leak of the chamber 10.
[21] The pump 22 removes unnecessary gas remaining in the chamber 10 to vacuum the chamber 10.
[22] When the semiconductor fabrication apparatus malfunctions or a predetermined period has elapsed, parts of the chamber 10 must be dissembled, cleaned, and reassembled. At this point, a gas leak state is inspected to check if there is a sealing problem between the assembled parts. [23] Particularly, doing the dissembling and reassembling of the flow flange having the shower head 14 and a plate 11 many times are troublesome and time-consuming. [24] Fig. 2 is a chamber cover according to an embodiment.
[25] A chamber cover in accordance with an embodiment is designed to be temporarily used to inspect the vacuum leak state of the semiconductor fabrication apparatus. The chamber cover includes a plate 40 and a gas inlet 42. [26] Although two or more gas inlets 42 may be provided, only one is provided in this embodiment. That is, the chamber cover is used to inspect the vacuum leak and thus it can perform its function even with only one gas inlet 42. [27] That is, after the vacuum leak state is checked by coupling the chamber cover to the chamber 10, when it is determined that no vacuum leak occurs, the chamber cover is separated from the chamber 10 and subsequently the flow flange including the shower head 14 and the plate 11 is coupled to the chamber 10. [28] Therefore, the vacuum leak occurring by the parts except for the flow flange can be inspected in a state where the chamber cover is coupled. [29] Since the chamber cover has a simpler structure than the flow flange and is lighter in weight than the flow flange, it can be conveniently used to inspect the vacuum leak. [30] A thickness tl of a plate 40 of the chamber cover may be 10-100 mm. A tensile strength and yield strength of the plate 40 may be respectively 13-17 kgf/cm2 and 8-12 kgf/cm2. [31] The plate is formed of metal material such as aluminum alloy that is relatively lighter in weight. For example, a weight of the plate may be 5-20 kg. Therefore, the user can separate the chamber cover from the chamber 10 without the help of the machine. [32] An O-ring 41 may be installed on an undersurface of the plate 40 to prevent the vacuum leak. [33] The gas inlet 42 is installed on the plate 40. A vacuum converter refining (VCR) type fitting may be used as the gas inlet 42. [34] In order to separate the chamber cover from the chamber 10 after inspecting the vacuum leak of the chamber 10, there is a need to release the vacuum state of the interior of the chamber 10. Therefore, nitrogen gas N2 is injected through the gas inlet
42 to release the vacuum state of the interior of the chamber 10. [35] As described above, the limitations caused by opening and closing the flow flange many times to check the vacuum leak of the chamber can be solved by the chamber cover of the embodiment. [36] Since the chamber cover is designed to be lighter in weight and to be easily coupled to and separated from the chamber, the vacuum leak of the chamber can be effectively inspected using the chamber cover. [37] Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art. Industrial Applicability
[38] The chamber cover of the embodiment can be used to inspect the vacuum leak of the chamber.

Claims

Claims
[ 1 ] A chamber cover comprising: a plate comprising metal material; and one or more gas inlets formed on the plate. [2] The chamber cover according to claim 1, wherein the plate is formed of aluminum alloy. [3] The chamber cover according to claim 1, wherein the number of the gas inlets is one. [4] The chamber cover according to claim 1, wherein a thickness and weight of the plate are respectively 10-100 mm and 5-20 kg. [5] The chamber cover according to claim 1, wherein a tensile strength and and yield strength of the plate are respectively 13-17 kgf/cm2 and 8-12 kgf/cm2. [6] The chamber cover according to claim 1, comprising an O-ring disposed on an undersurface of the plate. [7] The chamber cover according to claim 6, wherein only the gas inlet and the O- ring are formed on or under the plate. [8] The chamber cover according to claim 1, wherein the gas inlet is a vacuum converter refining fitting.
PCT/KR2008/005061 2007-08-31 2008-08-28 Chamber cover WO2009028890A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070088343A KR100906906B1 (en) 2007-08-31 2007-08-31 Chamber cover
KR10-2007-0088343 2007-08-31

Publications (2)

Publication Number Publication Date
WO2009028890A2 true WO2009028890A2 (en) 2009-03-05
WO2009028890A3 WO2009028890A3 (en) 2009-04-23

Family

ID=40388028

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/005061 WO2009028890A2 (en) 2007-08-31 2008-08-28 Chamber cover

Country Status (2)

Country Link
KR (1) KR100906906B1 (en)
WO (1) WO2009028890A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020020071A (en) * 2000-09-07 2002-03-14 엄주성 Method and apparatus for helmet shell
US20050081605A1 (en) * 2003-10-20 2005-04-21 Kyoung-Hwan Chin Vacuum leakage detecting device for use in semiconductor manufacturing system
KR20060010125A (en) * 2004-07-27 2006-02-02 (주)아이씨디 Aluminum plasma chamber and method for manufacturing the same
US20060228571A1 (en) * 2003-01-14 2006-10-12 Tadahiro Ohmi Member of apparatus for plasma treatment, member of treating apparatus, apparatus for plasma treatment, treating apparatus and method of plasma treatment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100673389B1 (en) * 2004-06-03 2007-01-24 세메스 주식회사 Plasma treatment apparatus
KR101254342B1 (en) * 2006-10-17 2013-04-12 엘지전자 주식회사 Plasma generating device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020020071A (en) * 2000-09-07 2002-03-14 엄주성 Method and apparatus for helmet shell
US20060228571A1 (en) * 2003-01-14 2006-10-12 Tadahiro Ohmi Member of apparatus for plasma treatment, member of treating apparatus, apparatus for plasma treatment, treating apparatus and method of plasma treatment
US20050081605A1 (en) * 2003-10-20 2005-04-21 Kyoung-Hwan Chin Vacuum leakage detecting device for use in semiconductor manufacturing system
KR20060010125A (en) * 2004-07-27 2006-02-02 (주)아이씨디 Aluminum plasma chamber and method for manufacturing the same

Also Published As

Publication number Publication date
WO2009028890A3 (en) 2009-04-23
KR100906906B1 (en) 2009-07-08
KR20090022735A (en) 2009-03-04

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