WO2009028827A2 - Method and device for chemical mechanical polishing of metal layer with supercritical fluid - Google Patents

Method and device for chemical mechanical polishing of metal layer with supercritical fluid Download PDF

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Publication number
WO2009028827A2
WO2009028827A2 PCT/KR2008/004832 KR2008004832W WO2009028827A2 WO 2009028827 A2 WO2009028827 A2 WO 2009028827A2 KR 2008004832 W KR2008004832 W KR 2008004832W WO 2009028827 A2 WO2009028827 A2 WO 2009028827A2
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Prior art keywords
polishing
metal layer
supercritical fluid
wafer
acid
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PCT/KR2008/004832
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French (fr)
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WO2009028827A3 (en
Inventor
Taek-Rea Kim
Hyun-Goo Kong
Jong-Dai Park
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Dongjin Semichem Co., Ltd.
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Publication of WO2009028827A2 publication Critical patent/WO2009028827A2/en
Publication of WO2009028827A3 publication Critical patent/WO2009028827A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a method and device for mechanical and chemical polishing of a metal layer with a supercritical fluid, the method comprising a first phase at which a supercritical fluid mixed with an oxidizing agent reacts to a metal layer of a wafer formed with the metal layer; and a second phase at which the completely reacted wafer is polished and planarized with a polishing machine. To efficiently perform a polishing operation, a pre-treated surface of the wafer is polished with a slurry (e.g., mixed with water and polishing particles) excluding an oxidizing agent to not only address errors due to stability issue of slurry in a conventional CMP operation but also to reduce various defects such as scratches, seam, corrosion, dishing and so on.

Description

Description
METHOD AND DEVICE FOR CHEMICAL MECHANICAL POLISHING OF METAL LAYER WITH SUPERCRITICAL
FLUID
Technical Field
[1] The present invention relates to a method and device for mechanical and chemical polishing with a supercritical fluid, and more particularly, to a method and device for chemical mechanical polishing with a supercritical fluid which not only addresses errors due to stability issue of slurry in a conventional CMP process but also reduces various defects (e.g., scratches, seam, corrosion, dishing, etc.) occurring as slurry causes stress on a surface of a wafer, by polishing a pre-treated surface of a wafer with a slurry (e.g., mixed with water and polishing particles) excluding an oxidizing agent so as to easily perform a polishing process. Background Art
[2] Generally, a supercritical fluid refers to any substance which is not identifiable between liquid and gas, and temperature and pressure at this phase is a critical point. Gas is not liquefied by any pressure as long as temperatures fall below critical temperatures. Thus, the supercritical fluid is defined as a fluid over critical temperatures and pressure, representing distinctive features that are not found in existing solvents.
[3] That is, properties of a solvent are determined by interaction between molecules depending on types and distances between molecules. As a liquid solvent is non- compressed and distances between molecules hardly change, it is not expected to see significant changes in properties. Meanwhile, a supercritical solvent may change in density from sparse state close to an ideal gas to high density close to liquid density. Thus, not only equilibrium property (solubility, entrainer effect) and transport property (viscosity, diffusivity and thermal conductivity) but also solvation and molecular clustering may be adjusted. Thus, use of such flexible property adjustment in reaction and separation processes may yield properties of solvent corresponding to liquid solvents in various types. That is, the properties may be adjusted to desired states by changing pressure and temperatures.
[4] If a gas is chosen as a supercritical fluid, remaining solvent issue may be addressed.
Use of a solvent such as carbon dioxide that is harmless to human and less affects the environment may enable a development of a nontoxic, eco-friendly process.
[5] From a thermodynamic point of view, if kinetic energy of translation of molecules is larger than maximum potential energy of attraction between molecules as temperature of a fluid is high enough, cohesion of molecules is not possible. If the kinetic energy and maximum potential energy are equal, it is called critical temperature. If the fluid is higher than this temperature, molecules are not cohesive even by any pressure, and thus it can not be liquid as a single component.
[6] If some molecules are put in a closed container at higher temperatures than a critical temperature to be pressurized above supercritical pressure, cohesion of molecules becomes similar to density of liquid, demonstrating peculiar properties, particularly, high solid diffusivity and reactivity.
[7] A semiconductor integrated circuit includes various active devices formed on a silicone substrate. Such active devices are connected together into a circuit and components. Typically, the active devices are connected together by a multi- level interconnection, e.g., a first metal layer, an interconnection layer, a second metal layer and/or a third and subsequent metal layer. Instead of aluminum, copper and copper alloy have been increasingly used as metal wirings for multi-level interconnection in integrated circuits. Copper has good metal properties, and particularly, has a lower resistance and higher resistances to electro-migration than aluminum alloy.
[8] Generally, a process of manufacturing semiconductors includes providing tungsten or copper wirings or metalization in each layer of dielectric oxidation layer. In general, the dielectric oxidation layer is formed by phosphosilicate glass (PSG), borophosilicate glass (BPSG), silicon oxide (SiO2), etc., to be planarized by a typical planarization technique. The planarized oxidation layer is etched or processed to patternize trenches and holes, and then a thin partition layer is formed on the oxidation layer. Generally, the partition layer includes titanium (Ti) and titanium nitride (TiN) to form Ti/TiN dummy, or tantalium (Ta) and tantalium nitride (TaN) to form Ta/TaN dummy. The partition layer may be formed by physical vapor deposition (PVD), sputtering, chemical vapor deposition, etc. Thus, the partition layer is coated on surfaces of trenches and holes as well as on an upper surface of the oxidation layer to enhance adhesion between metalized layers and oxidation layer. The metallization is performed by providing conductive materials such as tungsten (W) or copper (Cu) on the partition layer. While the trenches which are filled with metal form wires, damascene or a global wiring layer, holes which are filled with metal form studs or biases and also a local interconnection between upper and lower layers. Wiring is completed by removing the partition layer and tungsten or copper layer from the surface of an oxidation layer.
[9] To form the metal wiring, chemical and mechanical polishing (CMP) of metal layers is required. In such CMP process, what were not considered defects (micro scratches, remaining metal, etc.) in the past are now regarded as defects to cause lower product quality as width of wiring and configuration is more minute and highly integrated. If slurry which is employed in a conventional CMP process is added with an oxidizing agent and is stored for a long time, the oxidizing agent reacts voluntarily and disappears to thereby lower oxidization performance of slurry polishing liquid. As a result, aging stability of wafer polishing may not be guaranteed.
[10] To address such a problem, an oxidizing agent is added to a polishing liquid right before a polishing process to perform a CMP process. To make up for such inconvenience, a polishing liquid in which an oxidizing stabilizer is added to a slurry has been developed. (Korean Patent First Publication No. 1997-062978, No. 2007-00120025, No. 2006-0079333 and No. 2006-0018410). However, if the oxidizing stabilizer is added, polishing speed decreases, which is not preferable from a productivity point of view.
[11] Also, to reduce defects, there has been an attempt to reduce remaining metal and micro scratches after a wafer polishing process by using an abrasive free slurry (Korean Patent First Publication No. 2006-0078196), causing too much use of the oxidizing agent.
[12] To address the problems, a process of performing a planarization by adding oxidizing agents (H2O2, O3, N2O4 and NO) to a supercritical fluid and by oxidizing and/or etching a metal layer has been developed. Disclosure of Invention Technical Problem
[13] Accordingly, it is an aspect of the present invention to form an oxidation layer of a metal layer in a desired thickness (preferably, a thickness requiring a planarization) before a polishing process by adjusting temperature and pressure through a supercritical reactor with a mixture of a supercritical fluid and an oxidizing agent to remain in a supercritical state, and by oxidizing a surface of a wafer.
[14] Also, it is another aspect of the present invention to adjust pressure and temperature of a supercritical fluid by adding at least one additive (surfactant, dispersion stabilizer, polishing fertilizer, etc.) to a material chosen as a supercritical fluid to maintain a supercritical state and enable a reaction into a desired thickness from a surface of a wafer, and to planarize the surface of the wafer which is pre-treated (forming an oxidation layer or etching, corrosion, etc.), with a polishing agent and a polishing machine.
[15] Additional aspects and/or advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present invention. Technical Solution
[16] The foregoing and/or other aspects of the present invention are achieved by providing a method for chemical mechanical polishing of a metal layer in a semi- conductor manufacturing process, the method comprising a first phase at which a supercritical fluid mixed with an oxidizing agent reacts to a metal layer of a wafer having the metal layer; and a second phase at which the completely reacted wafer is polished and planarized by a polishing machine.
[17] The foregoing and/or other aspects of the present invention are also achieved by providing a device for chemical mechanical polishing of a metal layer in a semiconductor manufacturing process, the device comprising a polishing machine which includes a turn table and a wafer chuck; and a reactor in which a supercritical fluid mixed with an oxidizing agent is put and a metal layer of a wafer and the supercritical fluid react to each other, with a temperature and pressure adjuster.
Advantageous Effects
[18] According to a method and device for chemical mechanical polishing of a metal layer with a supercritical fluid, a supercritical fluid mixed with an oxidizing agent and/or an additive reacts to a metal layer to be oxidized or etched into a thickness to be planarized as a pretreatment for an easier polishing process, and the pretreated surface of the wafer is polished with stable slurry (e.g., mixed with water and polishing particles) without an oxidizing agent. Thus, not only errors due to stability of slurry may be addressed but also various defects (e.g. scratches, seam, corrosion, dishing, etc.) due to stress given on the surface of the wafer by the conventional slurry may be reduced. Mode for the Invention
[19] Hereinafter, the present invention will be described in detail with accompanying drawings.
[20] The present invention relates to method for a chemical mechanical polishing of a metal layer with a supercritical fluid, and more particularly, to a method for a chemical and mechanical polishing of a metal layer in a semiconductor manufacturing process which includes a first phase at which a supercritical fluid mixed with an oxidizing agent reacts to a metal layer of a wafer formed with the metal layer; and a second phase at which the completely-reacted wafer is polished and planarized with a polishing machine.
[21] That is, as the supercritical fluid has far better diffusivity and reactivity than a conventional fluid, the supercritical fluid deeply penetrates a metal layer of a wafer to form a thick oxidation layer, a corrosion layer or to be etched if the supercritical fluid is mixed with an oxidizing agent.
[22] While a polishing machine forms an oxidation layer and polishes the layer at the same time repetitively in a CMP process of a metal layer, an oxidation layer in the present invention is formed at a first phase and then removed to be planar at a second phase. As the oxidation layer is formed within the supercritical fluid, it is formed in thick thickness, and preferably planarized into a desired thickness once or twice. Thus, the process of planarizing an oxidation layer in a CMP process may be performed once or twice.
[23] At the first phase, the supercritical fluid may include various known materials, and preferably, carbon dioxide, ethane, ethylene, propane, propylene, cyclohexane, iso- propanol, benzene, toluene, p-xylene, chlorotrifluoromethane, tricholrofluoromethane, ammonia, water, etc. which may be used alone or together.
[24] The oxidizing agent which is mixed to the supercritical fluid may include a known oxidizing agent, and preferably, peroxidized compound, organic acid or oxide. A mixing density of the oxidizing agent may be predetermined to control an oxidizing speed, and adjusted from approximately 0.01 vol% to 90 vol%.
[25] The peroxidized compound may include hydrogen peroxide, benzoil peroxide, calcium peroxide, peroxydicarbonate, octanoil peroxide, acetylbenzoilperoxide, etc., which may be used alone or together. The oxide may include H2O2, O3, N2O4, NO, etc. which may be used alone or together. The organic acid may include nitric acid, sulfuric acid, phosphoric acid, hydrochloric acid, etc. which may be used alone or together. The mixing density of the additive is predetermined to control an oxidizing speed, e.g., from approximately 0.01 vol% to 90 vol% with respect to entire oxidizing agent and supercritical fluid.
[26] The supercritical fluid at the first phase may include at least one additive which has a first group of surfactant, dispersion stabilizer, solvent, polishing resistant, polishing fertilizer, oxidation fertilizer and chelator.
[27] The polishing fertilizer may be selected from a group of sulfonic acid, ethanesulfonic acid, methanesulfonic acid, toluenesulfonic acid, ethylsulfonic acid, sul- fonedisulfotonic acid, sulfonemonosulfonic acid, naphthalenesulfonic acid, benzene sulfonic acid, methanesulfonyl fluoride and a mixture thereof, and may be selected from a group of oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, subelic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid and a mixture thereof.
[28] The dispersion stabilizer may be selected from a group of polyacrylamide, poly(acrylamide-co-acrylic acid), poly(acrylic acid-co-maleic acid), polymethy- lacrylate, polymekylmethaacrylate, poly(methylmethaacrylate-co-butylmethaacrylate), poly(methylmethaacrylate-co-ethylacrylate), poly (methylmethaacrylate-co-methaacry lie acid), poly aery lie acid, poly aery lie acid sodium salt, polyacrylic acid ammonium salt and a mixture thereof.
[29] The polishing resistant of an insulation layer includes an imine high molecular compound with a molecular weight of 1,000 to 100,000, and more specifically, polyethyleneimine, polypropyleneimine, polybutyleneimine, etc.
[30] The polishing resistant of a metal layer may include a group of benzotriazole,
1,2,4-triazole, tolyltriazole, benzimidazole, benzothiazole, 0-aminophenol, m- phenylenediamine and a mixture thereof.
[31] The chelator may include phosphoric acid and sulfonic acid compounds. The phosphoric acid compound may include phosphoric acid, phosphite, hypophosphorus acid, α-aminoethylphosphoric acid, aminomethyl pyrophosphate, amino- (3,4-dihytroxylphenyl)methylphosphoric acid, ethylenediamine tetram- ethylenephosphoric acid, isopropylmethyl pyrophosphate, diethylenetriaminepen- tamethylene pyrophosphate, methyl pyrophosphate, nitrilotris (methylphosphoric acid), etc. The sulfonic acid compound may include a group of sulfuric acid, sulfurous acid, thiosulfuric acid, sulfamate, sulfonile acid, sulfosalicylic acid, sulfosuccic acid, sul- fuphthalic cid, benzensulfonic acid, naphthol sulfonic acid, methane sulfonic acid, toluene sulfonic acid, sulfonilediacetate, dodecylbenzene sulfonic acid, 2-aminotoluene-5-sulfonic acid, 2-aminotoluene-4-sulfonic acid and a mixture thereof.
[32] The surfactant may include dodecylsulfate sodium salt, sodium lauryl sulfate, dodecyl sulfate sodium salt and a mixture thereof.
[33] The oxidation fertilizer may include ferric nitrate and a compound thereof, hydrogen peroxide, potassium iodate, manganese oxide, ammonium hydroxide, ammonium persulfate, potassium persulfate, ammonium persulfate/sulfuric acid, potassium persulfate/sulfuric acid, ferric chloride/hydrochloric acid, chromic acid, chromic acid/ hydrochloric acid, potassium dichromate/sulfuric acid and stearic acid ferric salt, etc.
[34] The fluid and the metal layer may react to each other when an oxidation layer is formed on the surface of the wafer, a metal layer is etched or both of which occur together.
[35] After a pre-treatment (first phase) is performed, a polishing process as a planarization process which is similar to that in a typical CMP process is carried out. The second phase as the polishing process may be executed by a typical polishing machine which includes a turn table attached with a pad, a chuck and a conditioner having a wafer thereon to turn and/or move and a slurry supplier, etc.
[36] When the polishing process is performed, slurry may be additionally supplied. The slurry may include slurry applied to a typical CMP process of a metal layer. Preferably, a mixture of water and a polishing agent may be used as slurry. That is, the slurry includes a polishing agent, but not an oxidizing agent to secure stability of slurry and remove defects. If the slurry does not include the oxidizing agent, the polishing process is substantially closer to a chemical polishing rather than a chemical and mechanical polishing. Here, the first phase as the pre-treatment corresponds to a chemical polishing. [37] The polishing agent may include γ-alumina, α-alumina, fumed silica, colloidal silica, ceria, etc. which may be used alone or together. Preferably, the polishing agent may include colloidal silica and fumed silica which provide good dispersion stability, and allows to easily manufacture slurry and to have less potential scratches.
[38] The present invention further provides a device for a chemical mechanical polishing of a metal layer with a supercritical fluid, the device for a chemical mechanical polishing of a metal layer in a semiconductor manufacturing process comprising a polishing machine which includes a turn table and a wafer chuck; and a reactor in which a supercritical fluid mixed with an oxidizing agent is put and a metal layer of a wafer and the supercritical fluid react to each other with a temperature and pressure adjuster.
[39] The polishing machine may include a conventional polishing machine as described above, and further include a reactor to pre-treat the wafer before the polishing process. The reactor includes a temperature and pressure adjuster for a fluid to maintain the supercritical state and provide more appropriate reaction condition. The temperature and pressure adjuster may include a typical temperature and pressure measuring device, heating and cooling device, pressurizing and exhausting device, a controller, etc. As the adjusted condition should be maintained, the reactor may preferably include a predetermined chamber where the supercritical fluid mixed with the oxidizing agent reacts to the metal layer of the wafer. The oxidizing agent may include materials described above.
[40] The supercritical fluid of the reactor may further include at least one of additives having a first group of surfactant, dispersion stabilizer, solvent, polishing resistant, polishing fertilizer, oxidation fertilizer and chelator as described above.
[41] The polishing machine may further include a slurry supplier like a typical polishing machine, and preferably further include a slurry supplier supplying a mixture of water and polishing agent as slurry, to thereby secure process stability and reduce defects.
[42] More specifically, the present invention may make a surface of a tungsten layer planar with a polishing machine supplying slurry including water mixed with polishing particles (polishing agent) after oxidizing a tungsten layer with a supercritical fluid (carbon dioxide) mixed with an oxidizing agent and an oxidation fertilizer (ferric).
[43] The supercritical fluid (carbon dioxide) may include at least one of dispersion stabilizer, oxidizing agent, chelator, polishing fertilizer, polishing resistant to make the surface of a copper wafer proper for a planarization process.
[44] Although a few exemplary embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes may be made in these exemplary embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Industrial Applicability
[45] According to a method and device for chemical mechanical polishing of a metal layer with a supercritical fluid, a supercritical fluid mixed with an oxidizing agent and/or an additive reacts to a metal layer to be oxidized or etched into a thickness to be planarized as a pretreatment for an easier polishing process, and the pretreated surface of the wafer is polished with stable slurry (e.g., mixed with water and polishing particles) without an oxidizing agent. Thus, not only errors due to stability of slurry may be addressed but also various defects (e.g. scratches, seam, corrosion, dishing, etc.) due to stress given on the surface of the wafer by slurry may be reduced.

Claims

Claims
[1] A method for a chemical mechanical polishing of a metal layer in a semiconductor manufacturing process, the method comprising: a first phase at which a supercritical fluid mixed with an oxidizing agent reacts to a metal layer of a wafer having the metal layer; and a second phase at which the completely reacted wafer is polished and planarized by a polishing machine.
[2] The method according to claim 1, wherein the supercritical fluid at the first phase further comprises at least one of additives including a first group of a surfactant, a dispersion stabilizer, a solvent, a polishing resistant, a polishing fertilizer, an oxidation fertilizer and a chelator.
[3] The method according to claim 1 or 2, wherein a slurry at the second phase comprises a mixture of water and a polishing agent.
[4] A device for a chemical mechanical polishing of a metal layer in a semiconductor manufacturing process, the device comprising: a polishing machine which has a turn table and a wafer chuck; and a reactor in which a supercritical fluid mixed with an oxidizing agent is put and a metal layer of a wafer and the supercritical fluid react to each other, with a temperature and pressure adjuster.
[5] The device according to claim 4, wherein the supercritical fluid in the reactor further comprises at least one of additives including a first group of a surfactant, a dispersion stabilizer, a solvent, a polishing resistant, a polishing fertilizer, an oxidation fertilizer and a chelator.
[6] The device according to claim 4 or 5, wherein the polishing machine further comprises a slurry supplier which supplies a mixture of water and a polishing agent as a slurry.
PCT/KR2008/004832 2007-08-27 2008-08-20 Method and device for chemical mechanical polishing of metal layer with supercritical fluid WO2009028827A2 (en)

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KR1020070086040A KR101431512B1 (en) 2007-08-27 2007-08-27 Chemical ＆ Mechanical Polishing Method and Apparatus for metal layer using the Supercritical Fluid
KR10-2007-0086040 2007-08-27

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Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2002038335A1 (en) * 2000-11-07 2002-05-16 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US20040266635A1 (en) * 2003-06-24 2004-12-30 Korzenski Michael B. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
KR20070021629A (en) * 2005-08-19 2007-02-23 부경대학교 산학협력단 Surfactants for use in supercritical carbon dioxide, method for improving the efficiency of cleaning of the various microelectronic structures with carbon dioxide fluid

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US6425956B1 (en) 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US7435165B2 (en) * 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US7485611B2 (en) * 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
KR100511943B1 (en) * 2003-05-22 2005-09-01 한화석유화학 주식회사 Concentrate of fine cerium oxide particles for chemical mechanical polishing and preparing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002038335A1 (en) * 2000-11-07 2002-05-16 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US20040266635A1 (en) * 2003-06-24 2004-12-30 Korzenski Michael B. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
KR20070021629A (en) * 2005-08-19 2007-02-23 부경대학교 산학협력단 Surfactants for use in supercritical carbon dioxide, method for improving the efficiency of cleaning of the various microelectronic structures with carbon dioxide fluid

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KR20090021487A (en) 2009-03-04
WO2009028827A3 (en) 2009-04-16
TW200915413A (en) 2009-04-01

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