WO2009021365A1 - Oled et son procédé - Google Patents

Oled et son procédé Download PDF

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Publication number
WO2009021365A1
WO2009021365A1 PCT/CN2007/003027 CN2007003027W WO2009021365A1 WO 2009021365 A1 WO2009021365 A1 WO 2009021365A1 CN 2007003027 W CN2007003027 W CN 2007003027W WO 2009021365 A1 WO2009021365 A1 WO 2009021365A1
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WO
WIPO (PCT)
Prior art keywords
layer
emitting layer
light
electron
organic electroluminescent
Prior art date
Application number
PCT/CN2007/003027
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English (en)
Chinese (zh)
Inventor
Xianjun Ke
Original Assignee
Truly Semiconductors Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truly Semiconductors Ltd. filed Critical Truly Semiconductors Ltd.
Publication of WO2009021365A1 publication Critical patent/WO2009021365A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants

Definitions

  • the present invention relates to a display device, and more particularly to an organic electroluminescent device, and to a method of fabricating the above device.
  • OLEDs Organic electroluminescent devices
  • OLED Organic electroluminescent devices
  • OLED has many advantages such as active illumination, no viewing angle limitation, high contrast, thinness, and fast response, it is recognized as the main force of next-generation displays. Due to the rapid development of various functional layer materials of OLEDs in recent years, It is about to become a big step in the mainstream quality display.
  • the organic electroluminescent device structure comprises a substrate, an anode, a cathode, and various functional organic/inorganic layers between the anode and the cathode, including but not limited to a hole injection layer (HIL), a hole transport layer (HTL), and a light emitting layer. (EML), electron transport layer (ETL), electron injection layer (EIL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EML electron transport layer
  • EIL electron injection layer
  • the structure of the light-emitting layer is often a host/guest doping system, that is, the organic light-emitting dye is impregnated into the organic light-emitting body by the principle of energy transfer, so that the organic light-emitting dye is excited.
  • OLEDs can achieve a variety of colors within the CIE range by mixing different luminescent dyes or multiple dyes.
  • the luminous efficiency of various materials has a great relationship with the functional materials and structures of the constituent devices.
  • the same luminescent dye is combined with the corresponding main body as the luminescent layer, and is applied to OLED devices of two different structures, and the luminous efficiencies of the two devices are used. There may be big differences, efficiency differences may even be multiplied, and life spans vary widely.
  • the luminous efficiency of the OLED device is still not very high, and the lifetime is not very long.
  • An organic electroluminescent device comprising, in order, an anode, a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, an electron injecting layer and a cathode, wherein the light emitting layer is It is doped with an electron transport type material.
  • the mixing ratio of the electron transporting type material and the light emitting layer main material in the light emitting layer is 0.1% to 100%.
  • the electron transport type material in the light emitting layer includes all materials usable as an electron transport layer.
  • a method for fabricating the above organic electroluminescent device comprises the steps of: (1) cleaning an ITO substrate as a transparent anode; (2) treating the ITO substrate after cleaning with 0 2 plasma, and then plating an organic film; (3) sequentially vapor-depositing the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer; (4) vapor-depositing the cathode; ⁇ 5) attaching the desiccant to the back cover, and then dispensing the package Step (3) When vapor-depositing the light-emitting layer, the electron-transporting material is mixed with the light-emitting layer host material and the guest light-emitting material.
  • the mixing ratio of the electron-transporting material and the material of the luminescent layer of the luminescent layer is 0.1% - 100%.
  • the ratio of the electron transporting type material to the light emitting layer host material in the light emitting layer may be formulated according to materials used and different color devices.
  • the hole injection layer is prepared by mixing two materials in a bulk and a doping manner to form a P-type structure; the doping concentration is controlled at 0.5% to 10%, and the evaporation rate and temperature of each evaporation source are controlled. All are independently controlled, monitored using a crystal oscillator; or a common HIL layer structure that is evaporated without doping.
  • step (3) various materials are heated by independent temperature heating source and independent crystal oscillator monitoring rate, and the doping ratio is set according to the structural conditions.
  • step (5) The entire process is carried out in a pure N 2 environment.
  • the beneficial effects of the invention are as follows: the electron-transporting material is used as a doping agent together with the main layer of the light-emitting layer and the guest material to form a light-emitting layer in a certain proportion, and the other structure is the same as the electron-transporting material is not added to the light-emitting layer.
  • the spectrum does not change compared to the device. It utilizes good electron transport properties of electron transport materials
  • the effect of the electron transport material, especially the high transmission performance, is more obvious.
  • the electron-transporting material is contained in the light-emitting layer, the transmission of electrons in the light-emitting layer can be effectively improved.
  • the fabrication method disclosed in the present invention can well control the hole-to-electron pair balance of the entire device, improve the luminous efficiency of the device, and reduce the device driving voltage. Since the hole and electron recombination balance is very good, the illuminating region can be firmly controlled within the luminescent layer, effectively suppressing the phenomenon that holes run into the electron transport layer or electrons run into the hole transport layer, thereby improving the device. Life expectancy.
  • the effect is similar to vapor deposition of the respective materials between adjacent layers.
  • the fuzzy interface so that the electrons are blocked from the electron transport layer to the light-emitting layer, greatly increasing the probability of electron injection into the light-emitting layer, reducing the secondary light-emitting phenomenon in the non-light-emitting region, enabling more electrons to be smoothly transmitted to the light-emitting layer.
  • the layer is combined with holes to emit light, which improves the luminous efficiency.
  • FIG. 1 is a schematic structural view of an organic electroluminescent device of the present invention
  • Figure 2 is a comparison of EL spectra of two red structure devices
  • Figure 3 is a comparison of EL spectra of two green structure devices
  • Figure 4 is a comparison of current density and voltage of two red structure devices
  • Figure 5 is a current density-voltage comparison diagram of two green structure devices
  • Figure 6 is a comparison of brightness and voltage of two red structure devices
  • Figure 7 is a comparison of brightness and voltage of two green structure devices
  • Figure 8 is a comparison diagram of attenuation of two red structure devices
  • Figure 9 is a comparison of the attenuation of two green structure devices.
  • the hole injection layer 12, the hole transport layer 13, the light-emitting layer 14, the electron transport layer 15, and the electrons are sequentially vapor-deposited on the glass substrate 10 with the transparent electrode ITO as the anode 11 and the A1 as the cathode 17.
  • the injection layer 16, which can be simply expressed as a glass substrate / ITO / HIL / HTL / EML / ETL / EIL / A1 (conventional structure).
  • the materials of each layer need to be adapted to the characteristics of electron and hole transport, and the adjacent layers are well matched, which is beneficial to the injection and transmission of electrons. For the above reasons, the materials of each layer are not. same.
  • the invention combines the electron transport layer ETL material as a dopant with the light-emitting layer EML body and the guest material in a certain proportion to form the light-emitting layer 14 on the basis of the conventional structure, and a separate electron transport layer is still needed behind the light-emitting layer 14.
  • This structure can be expressed in a simple form: glass substrate (glass substrate) I ' ITO / HIL / HTL /EML (light-emitting layer host material + luminescent dye + ETL material) / ETL / EIL / A1. If the mobility of the electron transport material ETL used in the device is higher, the performance improvement is more pronounced. Most of the electron transport materials that we currently use have luminescent properties such as Alq3.
  • Alq3 When Alq3 is used as a single-layer luminescent layer, it can emit yellow-green light, but the efficiency is very low.
  • the doping of the electron transporting material as a dopant into the light-emitting layer 14 in this invention does not utilize the property of itself to emit light. In this invention, the electron transporting material does not emit light in the light-emitting layer 14.
  • the ratio of the electron transporting type material to the light emitting layer main material in the light emitting layer M is 0.1% to 100%.
  • the specific ratio can be adjusted according to the materials used and different color devices. For example, when used in red devices, the electron transport type is very high, and even completely replaces the original light-emitting layer host material as a separate light-emitting layer body. In green devices, the ratio can be controlled between 5% and 20%. For blue devices, the ratio is higher than green. Small, can be controlled below 10%.
  • the small molecule organic electroluminescent diode is fabricated by depositing a plurality of functional layers and an organic thin film of a light-emitting layer on a glass substrate pre-coated with ITO in a high vacuum chamber by means of thermal evaporation.
  • ITO is used as a transparent anode.
  • the specific manufacturing steps of the light emitting device are as follows:
  • the ITO substrate after cleaning is treated with 0 2 plasma, 'and then the organic film is plated;
  • the hole injection layer 12 is formed by mixing two materials in a bulk and doped manner to form a P-type structure to reduce the device voltage.
  • the concentration of the doping is controlled at 0.5% to 10%, and the evaporation rate and temperature of each evaporation source are independently controlled, monitored by a crystal oscillator; or a common HIL layer structure which is evaporated without doping;
  • the hole transport layer 13, the light-emitting layer 14, the electron transport layer 15, and the electron injection layer 16 are sequentially evaporated.
  • the luminescent layer 14 is co-steamed using a host, a guest luminescent dye, and an electron transporting material. Various materials are used with independent temperature heating source heating and independent crystal oscillator monitoring rate, and the doping ratio is set according to the structural conditions;
  • the present invention selects a high mobility electron transport type material of the type TC1107 and TC1106 produced by Taiwan Jingyi Chemical Material Co., Ltd., and the measured experimental results are as a graph.
  • the results of doping TC1107 in the red devices involved in Figures 2, 4, 6, and 8 show that the results of doping TC1106 in the green devices involved in Figures 3, 5, 7, and 9 are shown.
  • the luminescence spectrum of the device does not change when TC1107 is doped into the host material of the red layer of the red device or the original host material is completely replaced.
  • the TC1106 was doped into the green device light-emitting layer at a ratio of 5% to 20%, and the device spectrum did not change.
  • FIG. 4 and FIG. 5 that after the TC1107 is used to replace the original luminescent layer host material of the red device, or the TC1106 is doped into the green device luminescent layer in proportion, the turn-on voltage of the device is lowered, and at the same current density, The device has a low drive voltage. It can be seen from Fig. 6 and Fig.
  • the TC1107 is used to replace the luminescent layer host material of the original red device, or the TC1106 is mixed into the luminescence of the green device according to a certain ratio, and the brightness (i.e., luminous efficiency) of the two devices is significantly improved.
  • the lifetime of the two devices is significantly improved by replacing the luminescent layer host material of the original red device with TC1107 or by proportionally doping TC1106 into the luminescent layer of the green device.
  • the electron transporting type material doped in the light emitting layer of the present invention is not limited to the ones mentioned in the above embodiments, and other high mobility electron transporting materials which are commercially available, such as ET4 materials produced by CHISSO, Japan, etc.
  • ET4 materials produced by CHISSO, Japan, etc.
  • the effect of improving the efficiency and extending the life of the organic electroluminescent device can also be achieved.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'OLED selon l'invention comprend une anode, une HIL, une HTL, une EML, une ETL, une EIL et une cathode. L'EML est dopée avec un matériau de transport d'électrons. Un procédé de fabrication d'un OLED comprend les étapes ci-dessous : (1) une plaque d'ITO est nettoyée, (2) puis la plaque d'ITO est traitée au moyen d'un plasma d'oxygène, (3) puis la HIL, la HTL, l'EML, l'ETL, l'EIL et la cathode sont déposées sur la plaque d'ITO en séquence, (4) puis la cathode est déposée, (5) et enfin l'OLED peut être fermée hermétiquement par un couvercle qui possède un dessiccant. Lors de l'étape (3), le matériau luminescent invité peut se déposer en même temps que le matériau luminescent hôte et le dopant.
PCT/CN2007/003027 2007-08-10 2007-10-23 Oled et son procédé WO2009021365A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200710029684.8 2007-08-10
CNA2007100296848A CN101118953A (zh) 2007-08-10 2007-08-10 一种有机电致发光器件及其制作方法

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WO2009021365A1 true WO2009021365A1 (fr) 2009-02-19

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WO (1) WO2009021365A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101777295B (zh) * 2010-01-29 2012-07-18 信利半导体有限公司 Oled显示器的检测线布线方法及制造方法
CN101789208B (zh) * 2010-01-29 2012-10-03 信利半导体有限公司 Oled显示器的检测线布线方法及制造方法
CN102468446B (zh) * 2010-11-18 2016-03-30 海洋王照明科技股份有限公司 一种阴极注入材料及其制备方法与应用
CN102222684B (zh) * 2011-06-30 2013-08-07 信利半导体有限公司 有机电致发光显示器制作方法和有机电致发光显示器
CN104078623B (zh) * 2014-06-17 2016-08-17 京东方科技集团股份有限公司 一种有机电致发光器件、有机电致发光显示装置
CN109713151A (zh) * 2018-12-29 2019-05-03 武汉天马微电子有限公司 显示面板、发光元件的制备方法以及显示装置
CN109585668B (zh) * 2019-01-10 2021-01-29 京东方科技集团股份有限公司 Oled显示器件、显示面板、oled显示器件的制备方法
CN111710306B (zh) * 2020-06-28 2022-03-01 深圳康佳电子科技有限公司 一种自发光lcd液晶屏幕、显示装置及电视机

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CN1684560A (zh) * 2005-02-26 2005-10-19 吉林大学 有机电致发光器件铟锡氧化物电极的处理方法

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CN1547423A (zh) * 2003-12-04 2004-11-17 中国科学院长春应用化学研究所 红光有机电致发光器件及其制造方法
CN1633222A (zh) * 2004-11-26 2005-06-29 信利半导体有限公司 一种白光有机电致发光显示器件
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