WO2009019756A1 - シリコン加熱炉 - Google Patents

シリコン加熱炉 Download PDF

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Publication number
WO2009019756A1
WO2009019756A1 PCT/JP2007/065368 JP2007065368W WO2009019756A1 WO 2009019756 A1 WO2009019756 A1 WO 2009019756A1 JP 2007065368 W JP2007065368 W JP 2007065368W WO 2009019756 A1 WO2009019756 A1 WO 2009019756A1
Authority
WO
WIPO (PCT)
Prior art keywords
circumferential end
face
heat insulating
insulating material
heating furnace
Prior art date
Application number
PCT/JP2007/065368
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Murai
Toshinori Konaka
Original Assignee
Teoss Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teoss Co., Ltd. filed Critical Teoss Co., Ltd.
Priority to EP07792038A priority Critical patent/EP2184574B1/en
Priority to US12/672,462 priority patent/US20110209693A1/en
Priority to JP2009526283A priority patent/JP4399026B2/ja
Priority to PCT/JP2007/065368 priority patent/WO2009019756A1/ja
Publication of WO2009019756A1 publication Critical patent/WO2009019756A1/ja

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Silicon Compounds (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)

Abstract

　原料シリコンの金属汚染を防止できるとともに、熱膨張変形による加熱効率の低下を防止できる、シリコン加熱炉を提供する。 　シリコン加熱炉１０は、２つの半円筒炉２６ａ，２６ｂを円筒状に組み合わせることによって構成されている。２つの半円筒炉２６ａ，２６ｂのそれぞれは、半円筒状のハウジング３４を有しており、ハウジング３４の内側には、断熱材３６、ヒーター３８および均熱材４２が配設されており、ハウジング３４の周方向両端部内面には、断熱材３６の径方向への離脱を防止する径方向離脱防止部材４４が設けられており、径方向離脱防止部材４４には、断熱材３６の周方向端面３６ａを覆う周方向端面被覆部材４６が取り付けられている。そして、断熱材３６の周方向端面３６ａと周方向端面被覆部材４６との間には、内部に冷却水が通される周方向端面冷却管４８が配設されている。
PCT/JP2007/065368 2007-08-06 2007-08-06 シリコン加熱炉 WO2009019756A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07792038A EP2184574B1 (en) 2007-08-06 2007-08-06 Silicon heating furnace
US12/672,462 US20110209693A1 (en) 2007-08-06 2007-08-06 silicon heating furnace
JP2009526283A JP4399026B2 (ja) 2007-08-06 2007-08-06 シリコン加熱炉
PCT/JP2007/065368 WO2009019756A1 (ja) 2007-08-06 2007-08-06 シリコン加熱炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065368 WO2009019756A1 (ja) 2007-08-06 2007-08-06 シリコン加熱炉

Publications (1)

Publication Number Publication Date
WO2009019756A1 true WO2009019756A1 (ja) 2009-02-12

Family

ID=40341004

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065368 WO2009019756A1 (ja) 2007-08-06 2007-08-06 シリコン加熱炉

Country Status (4)

Country Link
US (1) US20110209693A1 (ja)
EP (1) EP2184574B1 (ja)
JP (1) JP4399026B2 (ja)
WO (1) WO2009019756A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010017635A (ja) * 2008-07-09 2010-01-28 Teoss Corp シリコン加熱炉及びこれを用いたシリコン破砕装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140117005A1 (en) * 2010-10-27 2014-05-01 Tangteck Equipment Inc. Diffusion furnace
CN102247924A (zh) * 2011-06-02 2011-11-23 河北晶龙阳光设备有限公司 一种硅晶体破碎装置
US20180292133A1 (en) * 2017-04-05 2018-10-11 Rex Materials Group Heat treating furnace

Citations (3)

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JPH1015822A (ja) 1996-07-01 1998-01-20 Canon Inc 研磨剤供給装置における研磨剤循環方法
JP2005288332A (ja) * 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンロッドの破砕方法
JP2005288336A (ja) 2004-03-31 2005-10-20 Kurita Water Ind Ltd 純水製造装置の組立方法

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US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US3963425A (en) * 1971-04-15 1976-06-15 Imperial Metal Industries (Kynoch) Limited Composite materials
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures
JPS60164089A (ja) * 1984-01-31 1985-08-27 住友軽金属工業株式会社 チタン内張２重管とチタン管板との組付方法
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1015822A (ja) 1996-07-01 1998-01-20 Canon Inc 研磨剤供給装置における研磨剤循環方法
JP2005288332A (ja) * 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンロッドの破砕方法
JP2005288336A (ja) 2004-03-31 2005-10-20 Kurita Water Ind Ltd 純水製造装置の組立方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2184574A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010017635A (ja) * 2008-07-09 2010-01-28 Teoss Corp シリコン加熱炉及びこれを用いたシリコン破砕装置

Also Published As

Publication number Publication date
EP2184574B1 (en) 2012-09-19
EP2184574A1 (en) 2010-05-12
JPWO2009019756A1 (ja) 2010-10-28
US20110209693A1 (en) 2011-09-01
JP4399026B2 (ja) 2010-01-13
EP2184574A4 (en) 2011-01-26

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