WO2009008659A3 - Plasma etching apparatus and method of etching wafer - Google Patents

Plasma etching apparatus and method of etching wafer Download PDF

Info

Publication number
WO2009008659A3
WO2009008659A3 PCT/KR2008/004026 KR2008004026W WO2009008659A3 WO 2009008659 A3 WO2009008659 A3 WO 2009008659A3 KR 2008004026 W KR2008004026 W KR 2008004026W WO 2009008659 A3 WO2009008659 A3 WO 2009008659A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
plasma
chamber
etching
plasma etching
Prior art date
Application number
PCT/KR2008/004026
Other languages
French (fr)
Other versions
WO2009008659A2 (en
Inventor
Kwan Goo Rha
Jung Hee Lee
Chul Hee Jang
Gil Hun Lee
Young Ki Han
Original Assignee
Sosul Co Ltd
Kwan Goo Rha
Jung Hee Lee
Chul Hee Jang
Gil Hun Lee
Young Ki Han
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070069705A external-priority patent/KR20090006401A/en
Priority claimed from KR1020070069704A external-priority patent/KR101372356B1/en
Priority claimed from KR1020070076695A external-priority patent/KR101423554B1/en
Application filed by Sosul Co Ltd, Kwan Goo Rha, Jung Hee Lee, Chul Hee Jang, Gil Hun Lee, Young Ki Han filed Critical Sosul Co Ltd
Publication of WO2009008659A2 publication Critical patent/WO2009008659A2/en
Publication of WO2009008659A3 publication Critical patent/WO2009008659A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Abstract

Provided is a plasma etching equipment and a method of etching a wafer using the plasma etching equipment. The plasma etching equipment includes a chamber, a wafer support disposed in the chamber and configured to support a wafer and move the wafer vertically, a plasma generation unit configured to generate plasma in the chamber, an etch gas supply unit configured to supply an etch gas into the chamber, and a remote plasma generation unit configured to excite a post-process gas into a plasma state and supply it into the chamber.
PCT/KR2008/004026 2007-07-11 2008-07-09 Plasma etching apparatus and method of etching wafer WO2009008659A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020070069705A KR20090006401A (en) 2007-07-11 2007-07-11 Method of etching a wafer bevel and method of manufacturing a semiconductor device using the same
KR1020070069704A KR101372356B1 (en) 2007-07-11 2007-07-11 Method for plasma-treatment
KR10-2007-0069705 2007-07-11
KR10-2007-0069704 2007-07-11
KR1020070076695A KR101423554B1 (en) 2007-07-31 2007-07-31 Plasma etching equipment and method of etching a wafer using the same
KR10-2007-0076695 2007-07-31

Publications (2)

Publication Number Publication Date
WO2009008659A2 WO2009008659A2 (en) 2009-01-15
WO2009008659A3 true WO2009008659A3 (en) 2009-03-12

Family

ID=40229268

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004026 WO2009008659A2 (en) 2007-07-11 2008-07-09 Plasma etching apparatus and method of etching wafer

Country Status (2)

Country Link
TW (1) TWI471929B (en)
WO (1) WO2009008659A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5783890B2 (en) * 2011-12-07 2015-09-24 株式会社日立ハイテクノロジーズ Plasma processing method
WO2014110628A1 (en) * 2013-01-18 2014-07-24 Itek Ventures Pty Ltd Gene and mutations thereof associated with seizure disorders

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100270207B1 (en) * 1993-10-04 2000-12-01 히가시 데쓰로 Plasma treatment apparatus
KR20060037819A (en) * 2004-10-28 2006-05-03 주식회사 하이닉스반도체 Apparatus for bevel etch of wafer edge and method for bevel etching using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW340957B (en) * 1996-02-01 1998-09-21 Canon Hanbai Kk Plasma processor and gas release device
US6387207B1 (en) * 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
JP4672113B2 (en) * 2000-07-07 2011-04-20 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
US20050221000A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method of forming a metal layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100270207B1 (en) * 1993-10-04 2000-12-01 히가시 데쓰로 Plasma treatment apparatus
KR20060037819A (en) * 2004-10-28 2006-05-03 주식회사 하이닉스반도체 Apparatus for bevel etch of wafer edge and method for bevel etching using the same

Also Published As

Publication number Publication date
WO2009008659A2 (en) 2009-01-15
TW200919580A (en) 2009-05-01
TWI471929B (en) 2015-02-01

Similar Documents

Publication Publication Date Title
TW200729339A (en) Selective etch of films with high dielectric constant with H2 addition
TW200802589A (en) Apparatus for cleaning exhaust part and vacuum pump of reaction chamber for semiconductor device and LCD manufacturing equipment
WO2010047976A3 (en) Silicon etch with passivation using plasma enhanced oxidation
WO2010122459A3 (en) Method and apparatus for high aspect ratio dielectric etch
WO2010088267A3 (en) Method and apparatus for etching
TW200629336A (en) Semiconductor plasma-processing apparatus and method
WO2010078306A3 (en) Method for making nanostructured surfaces
TW200614368A (en) Plasma processing device amd method
WO2012125656A3 (en) Methods for etch of sin films
GB2468458A (en) Method of etching a high aspect ratio contact
TW200739719A (en) Plasma etching method and computer-readable storage medium
TW200600609A (en) Method and apparatus for stable plasma processing
WO2011063407A3 (en) Methods and apparatus for plasma based adaptive optics
WO2009104918A3 (en) Apparatus and method for processing substrate
TW200723395A (en) Method for forming a semiconductor device including a plasma ashing treatment for removal of photoresist
WO2013062831A3 (en) Process chamber for etching low k and other dielectric films
TW200625440A (en) Wafer bevel polymer removal
SG152207A1 (en) Methods for forming high aspect ratio features on a substrate
TW200624609A (en) Apparatus for the optimization of atmospheric plasma in a plasma processing system
WO2012018375A3 (en) Plasma mediated ashing processes
TW200746289A (en) Post-etch treatment system for removing residue on a substrate
EP1999784A4 (en) Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
TW200737345A (en) Method and system for selectively etching a dielectric material relative to silicon
WO2011023894A3 (en) Method for texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
TW200643611A (en) Etch with photoresist mask

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08778687

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08778687

Country of ref document: EP

Kind code of ref document: A2