WO2009008259A1 - 撮像装置の製造方法、撮像装置及び携帯端末 - Google Patents

撮像装置の製造方法、撮像装置及び携帯端末 Download PDF

Info

Publication number
WO2009008259A1
WO2009008259A1 PCT/JP2008/061450 JP2008061450W WO2009008259A1 WO 2009008259 A1 WO2009008259 A1 WO 2009008259A1 JP 2008061450 W JP2008061450 W JP 2008061450W WO 2009008259 A1 WO2009008259 A1 WO 2009008259A1
Authority
WO
WIPO (PCT)
Prior art keywords
imaging
imaging device
imaging elements
substrate
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061450
Other languages
English (en)
French (fr)
Inventor
Masanao Majima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Opto Inc
Original Assignee
Konica Minolta Opto Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Opto Inc filed Critical Konica Minolta Opto Inc
Priority to JP2009522572A priority Critical patent/JPWO2009008259A1/ja
Priority to US12/664,880 priority patent/US20100182483A1/en
Publication of WO2009008259A1 publication Critical patent/WO2009008259A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/022—Mountings, adjusting means, or light-tight connections, for optical elements for lenses lens and mount having complementary engagement means, e.g. screw/thread
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/025—Mountings, adjusting means, or light-tight connections, for optical elements for lenses using glue
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Studio Devices (AREA)

Abstract

　複数の撮像装置を一体的に形成した後、切断分離して、個々の撮像装置とするに際し、分離後であってもイメージセンサの方向等を容易に識別でき、更に、一体的に形成した際の、どの位置で形成された撮像装置であるかを識別可能とするために、シリコンウェハの一方の面に複数の撮像素子を形成する工程と、撮像素子毎に、撮像光学系で受光画素部を封止する工程と、シリコンウェハを撮像素子毎に切断する工程と、切断された複数の撮像素子を基板上に載置する工程と、基板と複数の撮像素子を電気的に接続する工程と、複数の撮像素子毎に識別マークが形成された金型により、基板と撮像光学系と撮像素子とを一体的にモールディングする工程と、モールディングされた基板を撮像素子毎に切断分離する工程と、を有する撮像装置の製造方法とする。
PCT/JP2008/061450 2007-07-09 2008-06-24 撮像装置の製造方法、撮像装置及び携帯端末 Ceased WO2009008259A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009522572A JPWO2009008259A1 (ja) 2007-07-09 2008-06-24 撮像装置の製造方法、撮像装置及び携帯端末
US12/664,880 US20100182483A1 (en) 2007-07-09 2008-06-24 Manufacturing Method Of Imaging Device, Imaging Device, and Mobile Terminal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-179529 2007-07-09
JP2007179529 2007-07-09

Publications (1)

Publication Number Publication Date
WO2009008259A1 true WO2009008259A1 (ja) 2009-01-15

Family

ID=40228438

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061450 Ceased WO2009008259A1 (ja) 2007-07-09 2008-06-24 撮像装置の製造方法、撮像装置及び携帯端末

Country Status (3)

Country Link
US (1) US20100182483A1 (ja)
JP (1) JPWO2009008259A1 (ja)
WO (1) WO2009008259A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011165774A (ja) * 2010-02-05 2011-08-25 Canon Inc 固体撮像装置の製造方法
EP2388821A1 (en) * 2010-05-17 2011-11-23 Kingpak Technology Inc. Manufacturing method and structure for wafer level image sensor module with fixed focal length
EP2341540A3 (en) * 2009-12-31 2012-01-25 Kingpak Technology Inc. Image sensor packaging structure with low transmittance encapsulant

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414060B (zh) 2010-09-17 2013-11-01 勝開科技股份有限公司 模造成型之免調焦距影像感測器構裝結構及其製造方法
TWI521252B (zh) * 2011-03-28 2016-02-11 柯尼卡美能達精密光學股份有限公司 攝影鏡頭單元及其製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120281A (ja) * 1992-10-08 1994-04-28 Hitachi Ltd モールド金型及びこれを用いたモールド装置
JPH11233539A (ja) * 1998-02-09 1999-08-27 Sharp Corp 半導体装置のモールド金型およびマーキング方法
JP2001267545A (ja) * 2000-03-22 2001-09-28 Sharp Corp 固体撮像装置およびその製造方法
JP2006303482A (ja) * 2005-03-25 2006-11-02 Fuji Photo Film Co Ltd 固体撮像装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817208A (en) * 1995-08-04 1998-10-06 Matsushita Electronics Corporation Resin sealing die, resin-sealed-type semiconductor device and method of manufacturing the device
US20090053850A1 (en) * 2005-03-25 2009-02-26 Fujifilm Corporation Method of manufacturing solid state imaging device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120281A (ja) * 1992-10-08 1994-04-28 Hitachi Ltd モールド金型及びこれを用いたモールド装置
JPH11233539A (ja) * 1998-02-09 1999-08-27 Sharp Corp 半導体装置のモールド金型およびマーキング方法
JP2001267545A (ja) * 2000-03-22 2001-09-28 Sharp Corp 固体撮像装置およびその製造方法
JP2006303482A (ja) * 2005-03-25 2006-11-02 Fuji Photo Film Co Ltd 固体撮像装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2341540A3 (en) * 2009-12-31 2012-01-25 Kingpak Technology Inc. Image sensor packaging structure with low transmittance encapsulant
JP2011165774A (ja) * 2010-02-05 2011-08-25 Canon Inc 固体撮像装置の製造方法
EP2388821A1 (en) * 2010-05-17 2011-11-23 Kingpak Technology Inc. Manufacturing method and structure for wafer level image sensor module with fixed focal length

Also Published As

Publication number Publication date
JPWO2009008259A1 (ja) 2010-09-09
US20100182483A1 (en) 2010-07-22

Similar Documents

Publication Publication Date Title
WO2009008259A1 (ja) 撮像装置の製造方法、撮像装置及び携帯端末
WO2007030226A3 (en) Backside thinned image sensor with integrated lens stack
WO2007027881A3 (en) Microelectronic imaging devices and associated methods for attaching transmissive elements
JP2013250133A5 (ja)
US9450004B2 (en) Wafer-level encapsulated semiconductor device, and method for fabricating same
HK1109708A2 (zh) 介面卡及仪器以及其形成工艺
EP2432017A3 (en) Manufacturing method of molded image sensor packaging structure with predetermined focal length and the structure using the same
WO2004027880A3 (en) Camera device, method of manufacturing a camera device, wafer scale package
EP2375447A3 (en) Manufacturing method and structure of a wafer level image sensor module with package structure
EP2228826A3 (en) Solid-state image pickup device and a method of manufacturing the same
US11193821B2 (en) Ambient light sensor with light protection
WO2011109442A3 (en) Led packaging with integrated optics and methods of manufacturing the same
WO2007021597A3 (en) Systems and methods for producing silicone hydrogel contact lenses
WO2009023465A3 (en) Method and apparatus for lens alignment for optically sensitive devices and systems implementing same
EP2082989A3 (en) Method for manufacturing a sensor device
WO2010035269A3 (en) Integrated solar powered device
US9893116B2 (en) Manufacturing method of electronic device and manufacturing method of semiconductor device
EP2031666A3 (en) Process for producing optical semiconductor device
EP2445009A3 (en) Photoelectric conversion device and image pickup system with photoelectric conversion device
WO2008085495A3 (en) Micromirror manufacturing method
WO2009085003A8 (en) Synthetic integral image device
US9952415B2 (en) Trenched-substrate based lens manufacturing methods, and associated systems
US9933601B2 (en) Stacked wafer lens and camera
WO2009014345A3 (en) Light emitting device and method of manufacturing the same
WO2008109405A3 (en) Backside illuminated imager and method of fabricating the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08790582

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009522572

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12664880

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08790582

Country of ref document: EP

Kind code of ref document: A1