WO2009004690A1 - 有機半導体デバイスおよび有機半導体デバイスの製造方法 - Google Patents

有機半導体デバイスおよび有機半導体デバイスの製造方法 Download PDF

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Publication number
WO2009004690A1
WO2009004690A1 PCT/JP2007/063146 JP2007063146W WO2009004690A1 WO 2009004690 A1 WO2009004690 A1 WO 2009004690A1 JP 2007063146 W JP2007063146 W JP 2007063146W WO 2009004690 A1 WO2009004690 A1 WO 2009004690A1
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WO
WIPO (PCT)
Prior art keywords
hydrogen
semiconductor device
organic semiconductor
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/063146
Other languages
English (en)
French (fr)
Inventor
Tatsuya Yoshizawa
Takuya Hatakeyama
Yohei Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to US12/666,990 priority Critical patent/US20100187516A1/en
Priority to JP2009521445A priority patent/JPWO2009004690A1/ja
Priority to PCT/JP2007/063146 priority patent/WO2009004690A1/ja
Priority to KR1020107001237A priority patent/KR20100032908A/ko
Publication of WO2009004690A1 publication Critical patent/WO2009004690A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/88Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/20Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/846Passivation; Containers; Encapsulations comprising getter material or desiccants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

 水素または水素イオンを吸着し、かつ吸着した水素または水素イオンを放出しないための水素吸着層を設けることで、デバイスへの水素および水素イオンの侵入を防止することが可能であり、長期に信頼性の高い有機半導体デバイス、および有機半導体デバイスの製造方法を提供すること。  本願の有機半導体デバイスは、少なくとも基板10と、第一電極11と、有機機能体12と、第二電極13と、水素または水素イオンを吸着し、かつ吸着した水素または水素イオンを放出しないための水素吸着層14とから構成される。
PCT/JP2007/063146 2007-06-29 2007-06-29 有機半導体デバイスおよび有機半導体デバイスの製造方法 Ceased WO2009004690A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/666,990 US20100187516A1 (en) 2007-06-29 2007-06-29 Organic semiconductor device and method for manufacturing organic semiconductor device
JP2009521445A JPWO2009004690A1 (ja) 2007-06-29 2007-06-29 有機半導体デバイスおよび有機半導体デバイスの製造方法
PCT/JP2007/063146 WO2009004690A1 (ja) 2007-06-29 2007-06-29 有機半導体デバイスおよび有機半導体デバイスの製造方法
KR1020107001237A KR20100032908A (ko) 2007-06-29 2007-06-29 유기 반도체 디바이스 및 유기 반도체 디바이스의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/063146 WO2009004690A1 (ja) 2007-06-29 2007-06-29 有機半導体デバイスおよび有機半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
WO2009004690A1 true WO2009004690A1 (ja) 2009-01-08

Family

ID=40225760

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/063146 Ceased WO2009004690A1 (ja) 2007-06-29 2007-06-29 有機半導体デバイスおよび有機半導体デバイスの製造方法

Country Status (4)

Country Link
US (1) US20100187516A1 (ja)
JP (1) JPWO2009004690A1 (ja)
KR (1) KR20100032908A (ja)
WO (1) WO2009004690A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009096250A1 (ja) * 2008-02-01 2009-08-06 Tokyo Electron Limited 有機発光ダイオード、有機発光ダイオードの製造方法、有機発光ダイオードを製造する製造装置およびプラズマ処理装置
WO2013065685A1 (ja) * 2011-10-31 2013-05-10 富士フイルム株式会社 光電変換素子及び撮像素子
WO2019130480A1 (ja) * 2017-12-27 2019-07-04 シャープ株式会社 表示装置及びその製造方法
CN112753281A (zh) * 2018-09-26 2021-05-04 夏普株式会社 显示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102006505B1 (ko) * 2014-09-24 2019-08-02 엘지디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
KR102484903B1 (ko) * 2015-05-22 2023-01-06 엘지디스플레이 주식회사 유기발광소자 및 그 제조방법
KR102680062B1 (ko) * 2018-12-10 2024-06-28 엘지디스플레이 주식회사 유기발광표시장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134270A (ja) * 2000-10-27 2002-05-10 Matsushita Electric Works Ltd 有機電界発光素子
JP2002184569A (ja) * 2000-10-03 2002-06-28 Semiconductor Energy Lab Co Ltd 発光装置
WO2004110105A1 (ja) * 2003-06-06 2004-12-16 Pioneer Corporation 有機半導体素子及びその製造方法
JP2007157606A (ja) * 2005-12-08 2007-06-21 Seiko Epson Corp 発光装置、発光装置の製造方法、及び電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924594B2 (en) * 2000-10-03 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
CN1653852A (zh) * 2002-05-10 2005-08-10 皇家飞利浦电子股份有限公司 电致发光控制板
US20060050028A1 (en) * 2004-04-13 2006-03-09 Pasch Nicholas F Method and apparatus for an improved micro electro-mechanical display backplane
US20060202933A1 (en) * 2005-02-25 2006-09-14 Pasch Nicholas F Picture element using microelectromechanical switch
ITMI20051500A1 (it) * 2005-07-29 2007-01-30 Getters Spa Sistemi getter comprendenti una fase attiva inserita in un materiale poroso distribuito in un mezzo disperdente permeabile
EP2009060B1 (en) * 2006-04-18 2013-03-13 Komatsu Seiren Co., Ltd. Hot-melt type member and organic el display panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184569A (ja) * 2000-10-03 2002-06-28 Semiconductor Energy Lab Co Ltd 発光装置
JP2002134270A (ja) * 2000-10-27 2002-05-10 Matsushita Electric Works Ltd 有機電界発光素子
WO2004110105A1 (ja) * 2003-06-06 2004-12-16 Pioneer Corporation 有機半導体素子及びその製造方法
JP2007157606A (ja) * 2005-12-08 2007-06-21 Seiko Epson Corp 発光装置、発光装置の製造方法、及び電子機器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009096250A1 (ja) * 2008-02-01 2009-08-06 Tokyo Electron Limited 有機発光ダイオード、有機発光ダイオードの製造方法、有機発光ダイオードを製造する製造装置およびプラズマ処理装置
WO2013065685A1 (ja) * 2011-10-31 2013-05-10 富士フイルム株式会社 光電変換素子及び撮像素子
JP2013118365A (ja) * 2011-10-31 2013-06-13 Fujifilm Corp 光電変換素子及び撮像素子
US9337437B2 (en) 2011-10-31 2016-05-10 Fujifilm Corporation Photoelectric conversion element and imaging device
WO2019130480A1 (ja) * 2017-12-27 2019-07-04 シャープ株式会社 表示装置及びその製造方法
CN112753281A (zh) * 2018-09-26 2021-05-04 夏普株式会社 显示装置

Also Published As

Publication number Publication date
JPWO2009004690A1 (ja) 2010-08-26
KR20100032908A (ko) 2010-03-26
US20100187516A1 (en) 2010-07-29

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