WO2009002045A3 - Manufacturing method of vertically structured gan led device - Google Patents

Manufacturing method of vertically structured gan led device Download PDF

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Publication number
WO2009002045A3
WO2009002045A3 PCT/KR2008/003501 KR2008003501W WO2009002045A3 WO 2009002045 A3 WO2009002045 A3 WO 2009002045A3 KR 2008003501 W KR2008003501 W KR 2008003501W WO 2009002045 A3 WO2009002045 A3 WO 2009002045A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
manufacturing
gan
structure supporting
forming
Prior art date
Application number
PCT/KR2008/003501
Other languages
French (fr)
Other versions
WO2009002045A2 (en
Inventor
Hyun Chul Ko
Meoung Whan Cho
Pil Guk Jang
Byung Il Cho
Original Assignee
Wavesquare Inc
Hyun Chul Ko
Meoung Whan Cho
Pil Guk Jang
Byung Il Cho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wavesquare Inc, Hyun Chul Ko, Meoung Whan Cho, Pil Guk Jang, Byung Il Cho filed Critical Wavesquare Inc
Publication of WO2009002045A2 publication Critical patent/WO2009002045A2/en
Publication of WO2009002045A3 publication Critical patent/WO2009002045A3/en

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Classifications

    • H01L33/44—
    • H01L33/0093—

Landscapes

  • Led Devices (AREA)

Abstract

The present invention relates especially to a manufacturing method of vertically structured GaN-based LED device completely preventing damage to the structure supporting layer using a chemical lift-off process. Manufacturing method of the present invention is comprised of steps including; (a) forming a buffer layer on a sapphire substrate to be removed; (b) growing a GaN-based LED structure having an n-type GaN layer, an active layer, and a p-type GaN layer to form multiple LED devices separately on the buffer layer formed in step (a); (c) forming multiple structure supporting layers on a LED structure formed in step (b) and forming a protection layer to cover the externally exposed areas of multiple structure supporting layers; (d) separating sapphire substrate from the GaN-based LED structure formed in step (b) by removing buffer layer using a CLO process; and (e) removing protection layer covering structure supporting layer.
PCT/KR2008/003501 2007-06-22 2008-06-20 Manufacturing method of vertically structured gan led device WO2009002045A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070061388A KR100870719B1 (en) 2007-06-22 2007-06-22 Manufacturing method of vertically structured gan led device
KR10-2007-0061388 2007-06-22

Publications (2)

Publication Number Publication Date
WO2009002045A2 WO2009002045A2 (en) 2008-12-31
WO2009002045A3 true WO2009002045A3 (en) 2009-02-26

Family

ID=40186146

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/003501 WO2009002045A2 (en) 2007-06-22 2008-06-20 Manufacturing method of vertically structured gan led device

Country Status (2)

Country Link
KR (1) KR100870719B1 (en)
WO (1) WO2009002045A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9240523B2 (en) 2009-04-03 2016-01-19 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component, optoelectronic component, and component arrangement having a plurality of optoelectronic components

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050104151A (en) * 2004-04-28 2005-11-02 주식회사 이츠웰 Gan-based light emitting diode and manufacturing method of the same
KR20070008759A (en) * 2005-07-12 2007-01-18 삼성전기주식회사 Method for manufacturing vertical structure light emitting diode
US20070077673A1 (en) * 2005-10-05 2007-04-05 Samsung Electro-Mechanics Co., Ltd Method for manufacturing vertically structured light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050104151A (en) * 2004-04-28 2005-11-02 주식회사 이츠웰 Gan-based light emitting diode and manufacturing method of the same
KR20070008759A (en) * 2005-07-12 2007-01-18 삼성전기주식회사 Method for manufacturing vertical structure light emitting diode
US20070077673A1 (en) * 2005-10-05 2007-04-05 Samsung Electro-Mechanics Co., Ltd Method for manufacturing vertically structured light emitting diode

Also Published As

Publication number Publication date
KR100870719B1 (en) 2008-11-27
WO2009002045A2 (en) 2008-12-31

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