WO2009001835A1 - 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 - Google Patents
光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 Download PDFInfo
- Publication number
- WO2009001835A1 WO2009001835A1 PCT/JP2008/061496 JP2008061496W WO2009001835A1 WO 2009001835 A1 WO2009001835 A1 WO 2009001835A1 JP 2008061496 W JP2008061496 W JP 2008061496W WO 2009001835 A1 WO2009001835 A1 WO 2009001835A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- exposing
- optical characteristic
- region
- exposing device
- device manufacturing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
- G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Geometry (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107001547A KR101521193B1 (ko) | 2007-06-26 | 2008-06-24 | 광학 특성의 계측 방법 및 광학 특성의 계측 장치, 광학 특성의 조정 방법, 노광 장치, 노광 방법 및 노광 장치의 제조 방법 |
EP08777561.5A EP2172966B1 (en) | 2007-06-26 | 2008-06-24 | Optical characteristic measuring method, optical characteristic adjusting method, exposing device, and exposing method |
JP2009520604A JPWO2009001835A1 (ja) | 2007-06-26 | 2008-06-24 | 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 |
US12/654,590 US10222293B2 (en) | 2007-06-26 | 2009-12-23 | Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-167857 | 2007-06-26 | ||
JP2007167857 | 2007-06-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/654,590 Continuation US10222293B2 (en) | 2007-06-26 | 2009-12-23 | Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009001835A1 true WO2009001835A1 (ja) | 2008-12-31 |
Family
ID=40185649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/061496 WO2009001835A1 (ja) | 2007-06-26 | 2008-06-24 | 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10222293B2 (ja) |
EP (1) | EP2172966B1 (ja) |
JP (1) | JPWO2009001835A1 (ja) |
KR (1) | KR101521193B1 (ja) |
TW (1) | TW200910019A (ja) |
WO (1) | WO2009001835A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6384025A (ja) * | 1986-09-26 | 1988-04-14 | Nec Corp | 縮小投影露光装置 |
JPH05160000A (ja) * | 1991-12-06 | 1993-06-25 | Nikon Corp | 露光装置 |
JPH1027736A (ja) * | 1996-07-09 | 1998-01-27 | Nikon Corp | 投影露光装置 |
JP2000258300A (ja) * | 1999-03-11 | 2000-09-22 | Nikon Corp | 投影光学系の結像特性計測装置及び計測方法並びに露光装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5666205A (en) | 1990-12-03 | 1997-09-09 | Nikon Corporation | Measuring method and exposure apparatus |
JPH08130181A (ja) * | 1994-10-28 | 1996-05-21 | Nikon Corp | 投影露光装置 |
JP2000121498A (ja) | 1998-10-15 | 2000-04-28 | Nikon Corp | 結像性能の評価方法及び装置 |
JP2001060546A (ja) * | 1999-08-20 | 2001-03-06 | Nikon Corp | 露光方法及び露光装置 |
JP2002340667A (ja) * | 2001-05-15 | 2002-11-27 | Nikon Corp | 照度計測装置および露光装置 |
JP2003021914A (ja) * | 2001-07-09 | 2003-01-24 | Nikon Corp | 光学特性測定方法、光学特性測定装置、及び露光装置 |
US7619747B2 (en) * | 2004-12-17 | 2009-11-17 | Asml Netherlands B.V. | Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device |
-
2008
- 2008-06-24 EP EP08777561.5A patent/EP2172966B1/en active Active
- 2008-06-24 JP JP2009520604A patent/JPWO2009001835A1/ja active Pending
- 2008-06-24 WO PCT/JP2008/061496 patent/WO2009001835A1/ja active Application Filing
- 2008-06-24 KR KR1020107001547A patent/KR101521193B1/ko active IP Right Grant
- 2008-06-25 TW TW097123692A patent/TW200910019A/zh unknown
-
2009
- 2009-12-23 US US12/654,590 patent/US10222293B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6384025A (ja) * | 1986-09-26 | 1988-04-14 | Nec Corp | 縮小投影露光装置 |
JPH05160000A (ja) * | 1991-12-06 | 1993-06-25 | Nikon Corp | 露光装置 |
JPH1027736A (ja) * | 1996-07-09 | 1998-01-27 | Nikon Corp | 投影露光装置 |
JP2000258300A (ja) * | 1999-03-11 | 2000-09-22 | Nikon Corp | 投影光学系の結像特性計測装置及び計測方法並びに露光装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20100049557A (ko) | 2010-05-12 |
US20100195072A1 (en) | 2010-08-05 |
JPWO2009001835A1 (ja) | 2010-08-26 |
EP2172966B1 (en) | 2019-04-17 |
EP2172966A1 (en) | 2010-04-07 |
EP2172966A4 (en) | 2017-06-14 |
KR101521193B1 (ko) | 2015-05-18 |
US10222293B2 (en) | 2019-03-05 |
TW200910019A (en) | 2009-03-01 |
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