WO2009001835A1 - Optical characteristic measuring method, optical characteristic adjusting method, exposing device, exposing method, and exposing device manufacturing method - Google Patents

Optical characteristic measuring method, optical characteristic adjusting method, exposing device, exposing method, and exposing device manufacturing method Download PDF

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Publication number
WO2009001835A1
WO2009001835A1 PCT/JP2008/061496 JP2008061496W WO2009001835A1 WO 2009001835 A1 WO2009001835 A1 WO 2009001835A1 JP 2008061496 W JP2008061496 W JP 2008061496W WO 2009001835 A1 WO2009001835 A1 WO 2009001835A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposing
optical characteristic
region
exposing device
device manufacturing
Prior art date
Application number
PCT/JP2008/061496
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Ooki
Ayako Nakamura
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to KR1020107001547A priority Critical patent/KR101521193B1/en
Priority to EP08777561.5A priority patent/EP2172966B1/en
Priority to JP2009520604A priority patent/JPWO2009001835A1/en
Publication of WO2009001835A1 publication Critical patent/WO2009001835A1/en
Priority to US12/654,590 priority patent/US10222293B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

Provided is an optical characteristic measuring method for measuring the optical characteristics of an optical system to form the image of an object arranged on a first surface, on a second surface. A first region for a measuring light to pass therethrough or to be reflected thereon is arranged (at S20) in the first surface. A second region for the measuring light to pass therethrough or to be reflected thereon is arranged (at S21) at a position lying in the second surface and corresponding to the first region. The quantities of the measuring light through either the first region or the second region and the optical system are detected (at S23 and S24) through the other of the first region and the second region. At least one of the first region and the second region is so shaped that the quantity of the measuring light to pass through or to be reflected on the optical system changes according to those optical characteristics.
PCT/JP2008/061496 2007-06-26 2008-06-24 Optical characteristic measuring method, optical characteristic adjusting method, exposing device, exposing method, and exposing device manufacturing method WO2009001835A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107001547A KR101521193B1 (en) 2007-06-26 2008-06-24 Optical characteristic measuring method and optical characteristic measuring apparatus, optical characteristic adjusting method, exposing device, exposing method, and exposing device manufacturing method
EP08777561.5A EP2172966B1 (en) 2007-06-26 2008-06-24 Optical characteristic measuring method, optical characteristic adjusting method, exposing device, and exposing method
JP2009520604A JPWO2009001835A1 (en) 2007-06-26 2008-06-24 Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposure method, and exposure apparatus manufacturing method
US12/654,590 US10222293B2 (en) 2007-06-26 2009-12-23 Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-167857 2007-06-26
JP2007167857 2007-06-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/654,590 Continuation US10222293B2 (en) 2007-06-26 2009-12-23 Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light

Publications (1)

Publication Number Publication Date
WO2009001835A1 true WO2009001835A1 (en) 2008-12-31

Family

ID=40185649

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061496 WO2009001835A1 (en) 2007-06-26 2008-06-24 Optical characteristic measuring method, optical characteristic adjusting method, exposing device, exposing method, and exposing device manufacturing method

Country Status (6)

Country Link
US (1) US10222293B2 (en)
EP (1) EP2172966B1 (en)
JP (1) JPWO2009001835A1 (en)
KR (1) KR101521193B1 (en)
TW (1) TW200910019A (en)
WO (1) WO2009001835A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384025A (en) * 1986-09-26 1988-04-14 Nec Corp Reduction stepper
JPH05160000A (en) * 1991-12-06 1993-06-25 Nikon Corp Exposure apparatus
JPH1027736A (en) * 1996-07-09 1998-01-27 Nikon Corp Projection exposure system
JP2000258300A (en) * 1999-03-11 2000-09-22 Nikon Corp Apparatus and method for measuring focusing characteristics of projection optical system and exposure device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5666205A (en) 1990-12-03 1997-09-09 Nikon Corporation Measuring method and exposure apparatus
JPH08130181A (en) * 1994-10-28 1996-05-21 Nikon Corp Projecting aligner
JP2000121498A (en) 1998-10-15 2000-04-28 Nikon Corp Method and device for evaluating focusing performance
JP2001060546A (en) * 1999-08-20 2001-03-06 Nikon Corp Exposure method and aligner
JP2002340667A (en) * 2001-05-15 2002-11-27 Nikon Corp Instrument for measuring illuminance, and exposure device
JP2003021914A (en) * 2001-07-09 2003-01-24 Nikon Corp Optical characteristic measuring method, optical characteristic measuring device, and exposure device
US7619747B2 (en) * 2004-12-17 2009-11-17 Asml Netherlands B.V. Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384025A (en) * 1986-09-26 1988-04-14 Nec Corp Reduction stepper
JPH05160000A (en) * 1991-12-06 1993-06-25 Nikon Corp Exposure apparatus
JPH1027736A (en) * 1996-07-09 1998-01-27 Nikon Corp Projection exposure system
JP2000258300A (en) * 1999-03-11 2000-09-22 Nikon Corp Apparatus and method for measuring focusing characteristics of projection optical system and exposure device

Also Published As

Publication number Publication date
KR20100049557A (en) 2010-05-12
US20100195072A1 (en) 2010-08-05
JPWO2009001835A1 (en) 2010-08-26
EP2172966B1 (en) 2019-04-17
EP2172966A1 (en) 2010-04-07
EP2172966A4 (en) 2017-06-14
KR101521193B1 (en) 2015-05-18
US10222293B2 (en) 2019-03-05
TW200910019A (en) 2009-03-01

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