WO2009001834A1 - 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 - Google Patents

光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 Download PDF

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Publication number
WO2009001834A1
WO2009001834A1 PCT/JP2008/061495 JP2008061495W WO2009001834A1 WO 2009001834 A1 WO2009001834 A1 WO 2009001834A1 JP 2008061495 W JP2008061495 W JP 2008061495W WO 2009001834 A1 WO2009001834 A1 WO 2009001834A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical characteristic
exposure device
exposure
characteristic measurement
device manufacturing
Prior art date
Application number
PCT/JP2008/061495
Other languages
English (en)
French (fr)
Inventor
Kiyoshi Toyama
Ayako Nakamura
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009520603A priority Critical patent/JPWO2009001834A1/ja
Priority to EP08777560A priority patent/EP2172965A1/en
Publication of WO2009001834A1 publication Critical patent/WO2009001834A1/ja
Priority to US12/654,589 priority patent/US20100177290A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

　第１面に配置される物体の像を第２面に形成する光学系の光学特性を計測する光学特性の計測方法において、前記第１面に少なくとも１つの位相パターンを配置する配置工程（Ｓ２０）と、前記配置工程により配置された前記位相パターンを所定の波長の光で照明する照明工程（Ｓ２２）と、前記位相パターンと前記光学系とを介して形成されるパターン像のうち、部分像を抽出する抽出工程（Ｓ２３，Ｓ２５）と、前記抽出工程により抽出された前記部分像に関する光の情報を検出する検出工程（Ｓ２４，Ｓ２６）とを含む。
PCT/JP2008/061495 2007-06-26 2008-06-24 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法 WO2009001834A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009520603A JPWO2009001834A1 (ja) 2007-06-26 2008-06-24 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法
EP08777560A EP2172965A1 (en) 2007-06-26 2008-06-24 Optical characteristic measurement method, optical characteristic adjusting method, exposure device, exposure method, and exposure device manufacturing method
US12/654,589 US20100177290A1 (en) 2007-06-26 2009-12-23 Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007168021 2007-06-26
JP2007-168021 2007-06-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/654,589 Continuation US20100177290A1 (en) 2007-06-26 2009-12-23 Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method

Publications (1)

Publication Number Publication Date
WO2009001834A1 true WO2009001834A1 (ja) 2008-12-31

Family

ID=40185648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061495 WO2009001834A1 (ja) 2007-06-26 2008-06-24 光学特性の計測方法、光学特性の調整方法、露光装置、露光方法及び露光装置の製造方法

Country Status (6)

Country Link
US (1) US20100177290A1 (ja)
EP (1) EP2172965A1 (ja)
JP (1) JPWO2009001834A1 (ja)
KR (1) KR20100049558A (ja)
TW (1) TW200910020A (ja)
WO (1) WO2009001834A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5785402B2 (ja) * 2011-03-03 2015-09-30 キヤノン株式会社 露光装置、デバイス製造方法および計測方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08304999A (ja) * 1995-05-11 1996-11-22 Oki Electric Ind Co Ltd 位相シフトマスク及びそれを用いた焦点位置検出方法
JP2000077295A (ja) * 1998-08-28 2000-03-14 Nikon Corp 光学系の検査装置および検査方法並びに該検査装置を備えた位置合わせ装置および投影露光装置
JP2000258300A (ja) * 1999-03-11 2000-09-22 Nikon Corp 投影光学系の結像特性計測装置及び計測方法並びに露光装置
JP2002093690A (ja) * 2000-09-19 2002-03-29 Hitachi Ltd 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297423B2 (ja) * 2000-08-09 2002-07-02 株式会社東芝 フォーカステストマスク、並びにそれを用いたフォーカス及び収差の測定方法
US20060103525A1 (en) * 2004-11-03 2006-05-18 Belle Enterprises, Inc. Child safety sensor for a vehicle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08304999A (ja) * 1995-05-11 1996-11-22 Oki Electric Ind Co Ltd 位相シフトマスク及びそれを用いた焦点位置検出方法
JP2000077295A (ja) * 1998-08-28 2000-03-14 Nikon Corp 光学系の検査装置および検査方法並びに該検査装置を備えた位置合わせ装置および投影露光装置
JP2000258300A (ja) * 1999-03-11 2000-09-22 Nikon Corp 投影光学系の結像特性計測装置及び計測方法並びに露光装置
JP2002093690A (ja) * 2000-09-19 2002-03-29 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
TW200910020A (en) 2009-03-01
US20100177290A1 (en) 2010-07-15
JPWO2009001834A1 (ja) 2010-08-26
KR20100049558A (ko) 2010-05-12
EP2172965A1 (en) 2010-04-07

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