WO2009001832A1 - Dispositif d'affichage et cible de pulvérisation - Google Patents

Dispositif d'affichage et cible de pulvérisation Download PDF

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Publication number
WO2009001832A1
WO2009001832A1 PCT/JP2008/061488 JP2008061488W WO2009001832A1 WO 2009001832 A1 WO2009001832 A1 WO 2009001832A1 JP 2008061488 W JP2008061488 W JP 2008061488W WO 2009001832 A1 WO2009001832 A1 WO 2009001832A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
atm
alloy film
contact
film
Prior art date
Application number
PCT/JP2008/061488
Other languages
English (en)
Japanese (ja)
Inventor
Junichi Nakai
Katsufumi Tomihisa
Aya Miki
Hiroshi Goto
Original Assignee
Kabushiki Kaisha Kobe Seiko Sho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Kobe Seiko Sho filed Critical Kabushiki Kaisha Kobe Seiko Sho
Publication of WO2009001832A1 publication Critical patent/WO2009001832A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)

Abstract

La présente invention a trait à un dispositif d'affichage dans lequel un film d'oxyde conducteur est disposé sur un film d'alliage d'Al en étant directement mis en contact avec le film. Le film d'alliage d'Al contient un Ni de 0,05 à 2,0 % atomique, et un In et/ou un Sn de 0,05 à 1,0 % atomique au total. Le dispositif d'affichage permet de supprimer une couche métallique d'arrêt et est simplifié sans augmenter le nombre d'étapes. Non seulement le film d'alliage d'Al est directement et sûrement mis en contact avec le film d'oxyde conducteur mais il permet aussi de réduire la résistivité électrique y compris lorsqu'une température de traitement thermique relativement faible est appliquée, et la résistivité électrique de contact est également réduite lorsque le film d'alliage est directement mis en contact avec le film d'oxyde conducteur. D'autre part, le dispositif d'affichage présente une excellente résistance à la chaleur et une excellente résistance à la corrosion. La présente invention a également trait à une cible de pulvérisation permettant de former le film d'alliage d'Al. La cible de pulvérisation contient un Ni de 0,05 à 2,0 % atomique et un In et/ou un Sn de 0,05 à 1,0 % atomique au total.
PCT/JP2008/061488 2007-06-26 2008-06-24 Dispositif d'affichage et cible de pulvérisation WO2009001832A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-168290 2007-06-26
JP2007168290A JP2009010053A (ja) 2007-06-26 2007-06-26 表示装置およびスパッタリングターゲット

Publications (1)

Publication Number Publication Date
WO2009001832A1 true WO2009001832A1 (fr) 2008-12-31

Family

ID=40185646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061488 WO2009001832A1 (fr) 2007-06-26 2008-06-24 Dispositif d'affichage et cible de pulvérisation

Country Status (3)

Country Link
JP (1) JP2009010053A (fr)
TW (1) TW200914971A (fr)
WO (1) WO2009001832A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157688A1 (fr) * 2011-05-17 2012-11-22 株式会社神戸製鋼所 Film d'alliage d'aluminium pour des dispositifs semi-conducteurs

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010101160A1 (fr) * 2009-03-02 2010-09-10 株式会社神戸製鋼所 Film réflecteur en alliage d'al, phare d'automobile, illuminateur et ornementation, et cible de pulvérisation d'alliage d'al
JP5260452B2 (ja) * 2009-09-10 2013-08-14 株式会社神戸製鋼所 耐温水性に優れるＡｌ合金反射膜、およびスパッタリングターゲット
JP2011033816A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 反射電極、および反射電極を備えた表示デバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112727A (ja) * 1997-06-26 1999-01-19 Sumitomo Chem Co Ltd アルミニウム合金単結晶ターゲット
JP2002299630A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ＭｏＷ／ＡｌまたはＡｌ合金／ＭｏＷの積層薄膜を用いた薄膜トランジスタおよび薄膜トランジスタアレイとその製造方法
JP2006261636A (ja) * 2005-02-17 2006-09-28 Kobe Steel Ltd 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2007157917A (ja) * 2005-12-02 2007-06-21 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112727A (ja) * 1997-06-26 1999-01-19 Sumitomo Chem Co Ltd アルミニウム合金単結晶ターゲット
JP2002299630A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ＭｏＷ／ＡｌまたはＡｌ合金／ＭｏＷの積層薄膜を用いた薄膜トランジスタおよび薄膜トランジスタアレイとその製造方法
JP2006261636A (ja) * 2005-02-17 2006-09-28 Kobe Steel Ltd 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2007157917A (ja) * 2005-12-02 2007-06-21 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157688A1 (fr) * 2011-05-17 2012-11-22 株式会社神戸製鋼所 Film d'alliage d'aluminium pour des dispositifs semi-conducteurs
JP2012243876A (ja) * 2011-05-17 2012-12-10 Kobe Steel Ltd 半導体装置用Ａｌ合金膜
US9153536B2 (en) 2011-05-17 2015-10-06 Kobe Steel, Ltd. Al alloy film for semiconductor device

Also Published As

Publication number Publication date
TW200914971A (en) 2009-04-01
JP2009010053A (ja) 2009-01-15

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