WO2009001832A1 - Display device and sputtering target - Google Patents

Display device and sputtering target Download PDF

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Publication number
WO2009001832A1
WO2009001832A1 PCT/JP2008/061488 JP2008061488W WO2009001832A1 WO 2009001832 A1 WO2009001832 A1 WO 2009001832A1 JP 2008061488 W JP2008061488 W JP 2008061488W WO 2009001832 A1 WO2009001832 A1 WO 2009001832A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
atm
alloy film
contact
film
Prior art date
Application number
PCT/JP2008/061488
Other languages
French (fr)
Japanese (ja)
Inventor
Junichi Nakai
Katsufumi Tomihisa
Aya Miki
Hiroshi Goto
Original Assignee
Kabushiki Kaisha Kobe Seiko Sho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Kobe Seiko Sho filed Critical Kabushiki Kaisha Kobe Seiko Sho
Publication of WO2009001832A1 publication Critical patent/WO2009001832A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Abstract

Provided is a display device wherein a conductive oxide film is arranged on an Al alloy film by being directly brought into contact with the film. The Al alloy film contains a Ni of 0.05-2.0 atm%, and an In and/or a Sn of 0.05-1.0 atm% in total. The display device makes it possible to eliminate a barrier metal layer, and is simplified without increasing the number of steps. The Al alloy film is not only directly and surely brought into contact with the conductive oxide film but also reduces electrical resistivity even when a relatively low heat treatment temperature is applied, and contact electrical resistivity is also reduced when the alloy film is directly brought into contact with the conductive oxide film. Furthermore, the display device has excellent heat resistance and corrosion resistance. A sputtering target for forming the Al alloy film is also provided. The sputtering target contains a Ni of 0.05-2.0 atm% and an In and/or a Sn of 0.05-1.0 atm% in total.
PCT/JP2008/061488 2007-06-26 2008-06-24 Display device and sputtering target WO2009001832A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007168290A JP2009010053A (en) 2007-06-26 2007-06-26 Display device and sputtering target
JP2007-168290 2007-06-26

Publications (1)

Publication Number Publication Date
WO2009001832A1 true WO2009001832A1 (en) 2008-12-31

Family

ID=40185646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061488 WO2009001832A1 (en) 2007-06-26 2008-06-24 Display device and sputtering target

Country Status (3)

Country Link
JP (1) JP2009010053A (en)
TW (1) TW200914971A (en)
WO (1) WO2009001832A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157688A1 (en) * 2011-05-17 2012-11-22 株式会社神戸製鋼所 Al ALLOY FILM FOR SEMICONDUCTOR DEVICES

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110318607A1 (en) * 2009-03-02 2011-12-29 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy reflective film, automobile light, illuminator, ornamentation, and aluminum alloy sputtering target
JP5260452B2 (en) * 2009-09-10 2013-08-14 株式会社神戸製鋼所 Al alloy reflective film with excellent hot water resistance and sputtering target
JP2011033816A (en) * 2009-07-31 2011-02-17 Kobe Steel Ltd Reflection electrode and display device provided with reflection electrode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112727A (en) * 1997-06-26 1999-01-19 Sumitomo Chem Co Ltd Aluminum alloy single crystal target
JP2002299630A (en) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd Thin film transistor using integrated thin film of mow/al or al alloy/mow, thin film transistor array and manufacturing method therefor
JP2006261636A (en) * 2005-02-17 2006-09-28 Kobe Steel Ltd Thin film transistor substrate, display device, sputtering target therefor
JP2007157917A (en) * 2005-12-02 2007-06-21 Kobe Steel Ltd Thin-film transistor substrate and display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112727A (en) * 1997-06-26 1999-01-19 Sumitomo Chem Co Ltd Aluminum alloy single crystal target
JP2002299630A (en) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd Thin film transistor using integrated thin film of mow/al or al alloy/mow, thin film transistor array and manufacturing method therefor
JP2006261636A (en) * 2005-02-17 2006-09-28 Kobe Steel Ltd Thin film transistor substrate, display device, sputtering target therefor
JP2007157917A (en) * 2005-12-02 2007-06-21 Kobe Steel Ltd Thin-film transistor substrate and display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157688A1 (en) * 2011-05-17 2012-11-22 株式会社神戸製鋼所 Al ALLOY FILM FOR SEMICONDUCTOR DEVICES
JP2012243876A (en) * 2011-05-17 2012-12-10 Kobe Steel Ltd SEMICONDUCTOR DEVICE Al ALLOY FILM
US9153536B2 (en) 2011-05-17 2015-10-06 Kobe Steel, Ltd. Al alloy film for semiconductor device

Also Published As

Publication number Publication date
JP2009010053A (en) 2009-01-15
TW200914971A (en) 2009-04-01

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