WO2008139875A1 - Dispositif de traitement sous vide - Google Patents

Dispositif de traitement sous vide Download PDF

Info

Publication number
WO2008139875A1
WO2008139875A1 PCT/JP2008/057892 JP2008057892W WO2008139875A1 WO 2008139875 A1 WO2008139875 A1 WO 2008139875A1 JP 2008057892 W JP2008057892 W JP 2008057892W WO 2008139875 A1 WO2008139875 A1 WO 2008139875A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
treatment device
vacuum treatment
shorter
recess
Prior art date
Application number
PCT/JP2008/057892
Other languages
English (en)
Japanese (ja)
Inventor
Akira Kumagai
Keiji Ishibashi
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to US12/597,804 priority Critical patent/US20100126669A1/en
Publication of WO2008139875A1 publication Critical patent/WO2008139875A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif de traitement sous vide capable de traiter de manière uniforme la totalité d'un substrat dans un conteneur sous vide. Dans le dispositif de traitement sous vide dans lequel le substrat (1) est placé et maintenu dans un emplacement en creux d'un porte-substrat (2), la différence (t2) séparant les hauteurs de la surface du porte-substrat (2) et la surface du substrat (1) à traiter est fixée égale ou inférieure à 0,2 mm, et la distance (t1) séparant la surface latérale du substrat (1) et la surface intérieure de l'emplacement en creux du porte-substrat (2) est fixée égale ou inférieure à 0,5 mm.
PCT/JP2008/057892 2007-05-08 2008-04-24 Dispositif de traitement sous vide WO2008139875A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/597,804 US20100126669A1 (en) 2007-05-08 2008-04-24 Vacuum treatment apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-123141 2007-05-08
JP2007123141A JP2008280547A (ja) 2007-05-08 2007-05-08 真空処理装置

Publications (1)

Publication Number Publication Date
WO2008139875A1 true WO2008139875A1 (fr) 2008-11-20

Family

ID=40002091

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057892 WO2008139875A1 (fr) 2007-05-08 2008-04-24 Dispositif de traitement sous vide

Country Status (3)

Country Link
US (1) US20100126669A1 (fr)
JP (1) JP2008280547A (fr)
WO (1) WO2008139875A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014203719A1 (fr) * 2013-06-21 2014-12-24 東京エレクトロン株式会社 Appareil de traitement de plasma et procédé de traitement de plasma

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6186067B1 (ja) * 2016-12-13 2017-08-23 住友精密工業株式会社 圧電体結晶膜の成膜方法および圧電体結晶膜成膜用トレイ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422122A (ja) * 1990-05-17 1992-01-27 Sumitomo Electric Ind Ltd プラズマ処理装置
JPH04354119A (ja) * 1991-05-31 1992-12-08 Furukawa Electric Co Ltd:The 気相成長装置の基板支持構造
JPH08139037A (ja) * 1994-11-09 1996-05-31 Hitachi Electron Eng Co Ltd 気相反応装置
JPH11145065A (ja) * 1997-11-10 1999-05-28 Toshiba Ceramics Co Ltd 気相薄膜形成装置及びそれを用いる気相薄膜形成法
JP2004335861A (ja) * 2003-05-09 2004-11-25 Sharp Corp 薄膜形成装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3430277B2 (ja) * 1995-08-04 2003-07-28 東京エレクトロン株式会社 枚葉式の熱処理装置
US6217724B1 (en) * 1998-02-11 2001-04-17 Silicon General Corporation Coated platen design for plasma immersion ion implantation
JP2009097078A (ja) * 2007-09-25 2009-05-07 Canon Anelva Corp ターゲット構造とターゲット保持装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422122A (ja) * 1990-05-17 1992-01-27 Sumitomo Electric Ind Ltd プラズマ処理装置
JPH04354119A (ja) * 1991-05-31 1992-12-08 Furukawa Electric Co Ltd:The 気相成長装置の基板支持構造
JPH08139037A (ja) * 1994-11-09 1996-05-31 Hitachi Electron Eng Co Ltd 気相反応装置
JPH11145065A (ja) * 1997-11-10 1999-05-28 Toshiba Ceramics Co Ltd 気相薄膜形成装置及びそれを用いる気相薄膜形成法
JP2004335861A (ja) * 2003-05-09 2004-11-25 Sharp Corp 薄膜形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014203719A1 (fr) * 2013-06-21 2014-12-24 東京エレクトロン株式会社 Appareil de traitement de plasma et procédé de traitement de plasma

Also Published As

Publication number Publication date
JP2008280547A (ja) 2008-11-20
US20100126669A1 (en) 2010-05-27

Similar Documents

Publication Publication Date Title
MY155130A (en) Method and device for treating a substrate surface of a substrate
EP1992990A4 (fr) Substratum traite pourvu d'une zone hydrophile et d'une zone hydrophobe et son procede de production
WO2002009166A1 (fr) Procede de fabrication de dispositif semi-conducteur, raffineur de substrat, et systeme de traitement du substrat
TW200727914A (en) Effervescent cleansing article
TW200746285A (en) Device and method for wet treating plate-like substrates
USD528656S1 (en) Top surface of an absorbent article
EP2449046A4 (fr) Procédé de traitement de surface et article traité
EP1895581A3 (fr) Procédé de traitement de la face arrière de plaquettes semi-conductrices, procédé de traitement de la face arrière de substrat, et film adhésif sensible à la pression et durcissable par radiation
WO2011044116A3 (fr) Plateformes microfluidiques tridimensionnelles et leurs procédés d'utilisation et de fabrication
WO2010101423A3 (fr) Broche de soulèvement et appareil de traitement de galettes la comportant
EP1186439A4 (fr) Procede de traitement de surface, article traite en surface et dispositif de traitement de surface
IL192072A0 (en) Device, system and method for the surface treatment of substrates
TW200505599A (en) Device and method for wet treating disc-like substrates
EP1988568A4 (fr) Dispositif de traitement de substrat, dispositif de transport de substrat, dispositif de prehension de substrat, et dispositif de traitement de solution chimique
WO2008149887A1 (fr) Dispositif pour prévenir et traiter un prolapsus d'organe pelvien
EP1932952A4 (fr) Procédé de traitement de surface pour l'inhibition des barbes
HK1095847A1 (zh) 導管、醫療器材和生化藥物表面修改中使用的聚合物
WO2012015466A3 (fr) Dispositif orthopédique
MY156875A (en) Method and assembly for treating a planar material to be treated and device for removing or holding off treatment liquid
TW200644109A (en) Device and method for liquid treatment of wafer-shaped articles
SG170665A1 (en) Method for grinding a semiconductor wafer
PL2353484T3 (pl) Element szlifujący i czyszczący
GB0702577D0 (en) An article and a method of surface treatment of an article
TW200943468A (en) Plasma processing device
EP2222148A4 (fr) Rouleaux pour transporter un substrat mince et procédé de traitement chimique consistant à utiliser les rouleaux

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08740819

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12597804

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 08740819

Country of ref document: EP

Kind code of ref document: A1