WO2008123545A1 - ＺｎＯ系薄膜 - Google Patents

ＺｎＯ系薄膜 Download PDF

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Publication number
WO2008123545A1
WO2008123545A1 PCT/JP2008/056566 JP2008056566W WO2008123545A1 WO 2008123545 A1 WO2008123545 A1 WO 2008123545A1 JP 2008056566 W JP2008056566 W JP 2008056566W WO 2008123545 A1 WO2008123545 A1 WO 2008123545A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
zno
zno thin
type
5x1020cm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/056566
Other languages
English (en)
French (fr)
Inventor
Ken Nakahara
Hiroyuki Yuji
Kentaro Tamura
Shunsuke Akasaka
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008001474A external-priority patent/JP2008273814A/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/450,597 priority Critical patent/US20110033718A1/en
Publication of WO2008123545A1 publication Critical patent/WO2008123545A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2914—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　様々なデバイスに適用できるｐ型不純物がドーピングされたＺｎＯ系薄膜を提供する。 　基板上に形成されたＭｇＸＺｎ１－ＸＯ膜（０≦Ｘ＜０．５）で、ｐ型ドーパントのアクセプタ濃度を、５×１０２０ｃｍ－３以下になるように形成する。アクセプタ濃度が、５×１０２０ｃｍ－３を超えてくると、ｐ型不純物と母体となるＺｎＯ結晶との混晶化が発生し、ｐ型にドーピングされた良質のＺｎＯ系薄膜とならない。これは、ＺｎＯ２次イオン強度に変化が見られることでわかる。
PCT/JP2008/056566 2007-04-04 2008-04-02 ＺｎＯ系薄膜 Ceased WO2008123545A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/450,597 US20110033718A1 (en) 2007-04-04 2008-04-02 ZnO THIN FILM

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007098813 2007-04-04
JP2007-098813 2007-04-04
JP2008001474A JP2008273814A (ja) 2007-04-04 2008-01-08 ＺｎＯ系薄膜
JP2008-001474 2008-01-08

Publications (1)

Publication Number Publication Date
WO2008123545A1 true WO2008123545A1 (ja) 2008-10-16

Family

ID=39831018

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056566 Ceased WO2008123545A1 (ja) 2007-04-04 2008-04-02 ＺｎＯ系薄膜

Country Status (1)

Country Link
WO (1) WO2008123545A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11213763A (ja) * 1998-01-30 1999-08-06 Hoya Corp 導電性酸化物薄膜を有する物品及びその製造方法
JP2002289918A (ja) * 2001-03-26 2002-10-04 Sharp Corp ｐ型半導体結晶の製造方法および発光デバイス
JP2004247681A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP2005223219A (ja) * 2004-02-06 2005-08-18 Tohoku Univ 薄膜及びｐ型酸化亜鉛薄膜製造方法と半導体デバイス
JP2007073672A (ja) * 2005-09-06 2007-03-22 Citizen Tohoku Kk 半導体発光素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11213763A (ja) * 1998-01-30 1999-08-06 Hoya Corp 導電性酸化物薄膜を有する物品及びその製造方法
JP2002289918A (ja) * 2001-03-26 2002-10-04 Sharp Corp ｐ型半導体結晶の製造方法および発光デバイス
JP2004247681A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP2005223219A (ja) * 2004-02-06 2005-08-18 Tohoku Univ 薄膜及びｐ型酸化亜鉛薄膜製造方法と半導体デバイス
JP2007073672A (ja) * 2005-09-06 2007-03-22 Citizen Tohoku Kk 半導体発光素子及びその製造方法

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