WO2008123170A1 - ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜 - Google Patents

ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜 Download PDF

Info

Publication number
WO2008123170A1
WO2008123170A1 PCT/JP2008/055364 JP2008055364W WO2008123170A1 WO 2008123170 A1 WO2008123170 A1 WO 2008123170A1 JP 2008055364 W JP2008055364 W JP 2008055364W WO 2008123170 A1 WO2008123170 A1 WO 2008123170A1
Authority
WO
WIPO (PCT)
Prior art keywords
sno2
sputtering target
sputtered film
mass
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055364
Other languages
English (en)
French (fr)
Inventor
Taizo Morinaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to CN2008800000930A priority Critical patent/CN101542009B/zh
Publication of WO2008123170A1 publication Critical patent/WO2008123170A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

　スパッタリング中の異常放電を低減しながら、加熱処理無しでも低い膜比抵抗を有し、なおかつその後の加熱処理による比抵抗変化が小さい、耐熱性に優れたスパッタ膜を得ることができる、抗折強度に優れ、なおかつ凝集相が実質的に無いＳｎＯ２系スパッタリングターゲットが開示される。本発明のＳｎＯ２系スパッタリングターゲットは、１．５～３．５質量％のＴａ２Ｏ５と、０．２５～２質量％のＮｂ２Ｏ５と、残部としてのＳｎＯ２および不可避不純物とを含んでなる焼結体からなる。
PCT/JP2008/055364 2007-03-29 2008-03-24 ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜 Ceased WO2008123170A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008800000930A CN101542009B (zh) 2007-03-29 2008-03-24 SnO2系溅射靶和溅射膜

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-088441 2007-03-29
JP2007088441A JP4859726B2 (ja) 2007-03-29 2007-03-29 ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜

Publications (1)

Publication Number Publication Date
WO2008123170A1 true WO2008123170A1 (ja) 2008-10-16

Family

ID=39830667

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055364 Ceased WO2008123170A1 (ja) 2007-03-29 2008-03-24 ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜

Country Status (5)

Country Link
JP (1) JP4859726B2 (ja)
KR (1) KR101038244B1 (ja)
CN (1) CN101542009B (ja)
TW (1) TW200900520A (ja)
WO (1) WO2008123170A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2174582A1 (de) 2008-10-09 2010-04-14 Invendo Medical Gmbh Medizintechnischer, elastischer Polymerschlauch und Verfahren zu seiner Herstellung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101459041B1 (ko) * 2013-03-04 2014-11-10 엘에스엠트론 주식회사 박막형 태양전지 및 그 제조방법
CN106206245A (zh) * 2015-05-08 2016-12-07 清华大学 氧化亚锡薄膜的制备方法
JP2018206467A (ja) * 2017-05-30 2018-12-27 株式会社アルバック 透明導電膜
KR102816464B1 (ko) 2021-09-01 2025-06-09 미쓰이금속광업주식회사 산화물 소결체 및 그 제조 방법 그리고 스퍼터링 타깃재

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07145478A (ja) * 1993-05-27 1995-06-06 Dowa Mining Co Ltd Ｉｔｏスパッタリングターゲット
JP2000281431A (ja) * 1999-03-30 2000-10-10 Mitsui Mining & Smelting Co Ltd ＳｎＯ２系焼結体、薄膜形成用材料および導電膜
JP2001131736A (ja) * 1999-11-09 2001-05-15 Nikko Materials Co Ltd スパッタリングターゲット及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007142330A1 (ja) * 2006-06-08 2009-10-29 旭硝子株式会社 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07145478A (ja) * 1993-05-27 1995-06-06 Dowa Mining Co Ltd Ｉｔｏスパッタリングターゲット
JP2000281431A (ja) * 1999-03-30 2000-10-10 Mitsui Mining & Smelting Co Ltd ＳｎＯ２系焼結体、薄膜形成用材料および導電膜
JP2001131736A (ja) * 1999-11-09 2001-05-15 Nikko Materials Co Ltd スパッタリングターゲット及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2174582A1 (de) 2008-10-09 2010-04-14 Invendo Medical Gmbh Medizintechnischer, elastischer Polymerschlauch und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JP2008248278A (ja) 2008-10-16
KR101038244B1 (ko) 2011-06-01
TW200900520A (en) 2009-01-01
TWI378149B (ja) 2012-12-01
JP4859726B2 (ja) 2012-01-25
CN101542009A (zh) 2009-09-23
KR20090012307A (ko) 2009-02-03
CN101542009B (zh) 2013-06-12

Similar Documents

Publication Publication Date Title
WO2008123170A1 (ja) ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜
TWI365917B (en) A1-based alloy sputtering target and process for producing the same
MX341322B (es) Aleacion de hierro-cromo-aluminio resistente al calor con baja velocidad de vaporizacion de cromo y resistencia elevada al calor.
WO2007118185A3 (en) Inhibitors of the 11-beta-hydroxysteroid dehydrogenase type 1 enzyme
TW200801215A (en) Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
NZ609344A (en) Method for treatment of diarrhea-predominant irritable bowel syndrome
WO2009028671A1 (ja) 高温強度に優れたボイラ用低熱膨張Ｎｉ基超耐熱合金及びそれを用いたボイラ部品並びにボイラ部品の製造方法
MY170399A (en) Fe-co-based alloy sputtering target material, and method of producing same
WO2007103014A3 (en) Sputtering target
WO2008053446A3 (en) Benzoxazepine compounds, their preparation and use
TW200718796A (en) Sputtering target
MX2010013552A (es) Compuestos antagonistas de arn para la inhibicion de expresion de glicerol-3-fosfato aciltransferasa mitocondrial 1 (mtgpat1).
WO2010013815A1 (ja) 標的遺伝子の発現を抑制する組成物
WO2009153596A3 (en) Niobium silicide alloys
WO2006052931A3 (en) Physical vapor deposition chamber having a rotatable substrate pedestal
TW200606270A (en) Sputtering target material
SG131821A1 (en) Deposition of enhanced seed layer using tantalum alloy based sputter target
WO2009060901A1 (ja) ＳｎＯ２系スパッタリングターゲット
SG122875A1 (en) Carbon containing sputter target alloy compositions
WO2007115047A3 (en) Inhibition of hiv replication and expression of p24 with eif-5a
SG118324A1 (en) Enhanced sputter target alloy compositions
MY172177A (en) Sputtering target material for producing intermediate layer film of perpendicular magnetic recording medium and thin film produced by using the same
CA2470969A1 (en) Magnesium alloy with room-temperature formability and excellent corrosion resistance
JP2008528694A5 (ja)
SG129331A1 (en) Enhanced sputter target alloy compositions

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000093.0

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020087020430

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722680

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08722680

Country of ref document: EP

Kind code of ref document: A1