WO2008120323A1 - 半導体装置の製造方法および配線層形成システム - Google Patents
半導体装置の製造方法および配線層形成システム Download PDFInfo
- Publication number
- WO2008120323A1 WO2008120323A1 PCT/JP2007/056689 JP2007056689W WO2008120323A1 WO 2008120323 A1 WO2008120323 A1 WO 2008120323A1 JP 2007056689 W JP2007056689 W JP 2007056689W WO 2008120323 A1 WO2008120323 A1 WO 2008120323A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- coating film
- removal
- wiring layer
- generated
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011248 coating agent Substances 0.000 abstract 6
- 238000000576 coating method Methods 0.000 abstract 6
- 238000009413 insulation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000004299 exfoliation Methods 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
層間絶縁膜に低誘電率膜を用いた場合におけるCMP工程での低誘電率膜の剥離を抑制する。
基板上に低誘電率の塗布膜を形成し(ステップS1)、基板面内の研磨レートの分布を用いてその塗布膜を基板エッジから除去する幅を設定し、その幅を用いてその塗布膜を部分的に除去する(ステップS2)。その際は、研磨レートの極小値に対応する位置に、その除去後の塗布膜のエッジがくるように、除去幅を設定する。そして、その除去後の塗布膜のエッジを覆って絶縁膜を形成した後(ステップS3)、開口部形成と導電膜形成を経て(ステップS5,S6)、その導電膜をその絶縁膜まで研磨する(ステップS7)。これにより、導電膜の研磨時に、塗布膜の剥離が抑制され、信頼性の高い配線層が形成可能になる。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/056689 WO2008120323A1 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置の製造方法および配線層形成システム |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/056689 WO2008120323A1 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置の製造方法および配線層形成システム |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008120323A1 true WO2008120323A1 (ja) | 2008-10-09 |
Family
ID=39807916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/056689 WO2008120323A1 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置の製造方法および配線層形成システム |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008120323A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10230455A (ja) * | 1997-02-17 | 1998-09-02 | Nec Corp | 研磨装置 |
JPH11114806A (ja) * | 1997-08-11 | 1999-04-27 | Tokyo Seimitsu Co Ltd | ウェーハ研磨装置 |
JP2001077113A (ja) * | 1999-09-02 | 2001-03-23 | Nec Corp | 銅配線の形成方法および銅配線の形成された半導体ウエハ |
JP2005217320A (ja) * | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 配線形成方法、半導体装置の製造方法並びに半導体実装装置の製造方法 |
JP2005217319A (ja) * | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 多層配線構造、半導体装置及び半導体実装装置 |
-
2007
- 2007-03-28 WO PCT/JP2007/056689 patent/WO2008120323A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10230455A (ja) * | 1997-02-17 | 1998-09-02 | Nec Corp | 研磨装置 |
JPH11114806A (ja) * | 1997-08-11 | 1999-04-27 | Tokyo Seimitsu Co Ltd | ウェーハ研磨装置 |
JP2001077113A (ja) * | 1999-09-02 | 2001-03-23 | Nec Corp | 銅配線の形成方法および銅配線の形成された半導体ウエハ |
JP2005217320A (ja) * | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 配線形成方法、半導体装置の製造方法並びに半導体実装装置の製造方法 |
JP2005217319A (ja) * | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 多層配線構造、半導体装置及び半導体実装装置 |
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