WO2008117450A1 - Process for producing organic transistor and organic transistor - Google Patents

Process for producing organic transistor and organic transistor Download PDF

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Publication number
WO2008117450A1
WO2008117450A1 PCT/JP2007/056425 JP2007056425W WO2008117450A1 WO 2008117450 A1 WO2008117450 A1 WO 2008117450A1 JP 2007056425 W JP2007056425 W JP 2007056425W WO 2008117450 A1 WO2008117450 A1 WO 2008117450A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic transistor
producing
semiconductor layer
film
organic semiconductor
Prior art date
Application number
PCT/JP2007/056425
Other languages
French (fr)
Japanese (ja)
Inventor
Satoru Ohta
Original Assignee
Pioneer Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corporation filed Critical Pioneer Corporation
Priority to PCT/JP2007/056425 priority Critical patent/WO2008117450A1/en
Publication of WO2008117450A1 publication Critical patent/WO2008117450A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Landscapes

  • Thin Film Transistor (AREA)

Abstract

[PROBLEMS] To provide a process for producing an organic transistor realizing less shift of threshold voltage, and provide the structure thereof. [MEANS FOR SOLVING PROBLEMS] A process for producing an organic transistor, the organic transistor including paired source electrode (4) and drain electrode (5), organic semiconductor layer (6) for forming a channel between the source electrode and the drain electrode and, laid on the organic semiconductor layer, gate insulating film (3) and gate electrode (2), which process comprises forming a porphyrin compound into a film to thereby obtain the organic semiconductor layer and simultaneously forming a siloxane compound or silazane compound into a film and hardening the same to thereby obtain the gate insulating film.
PCT/JP2007/056425 2007-03-27 2007-03-27 Process for producing organic transistor and organic transistor WO2008117450A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056425 WO2008117450A1 (en) 2007-03-27 2007-03-27 Process for producing organic transistor and organic transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056425 WO2008117450A1 (en) 2007-03-27 2007-03-27 Process for producing organic transistor and organic transistor

Publications (1)

Publication Number Publication Date
WO2008117450A1 true WO2008117450A1 (en) 2008-10-02

Family

ID=39788193

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056425 WO2008117450A1 (en) 2007-03-27 2007-03-27 Process for producing organic transistor and organic transistor

Country Status (1)

Country Link
WO (1) WO2008117450A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000059040A1 (en) * 1999-03-30 2000-10-05 Seiko Epson Corporation Method of manufacturing thin-film transistor
JP2005509299A (en) * 2001-11-05 2005-04-07 スリーエム イノベイティブ プロパティズ カンパニー Organic thin film transistor with siloxane polymer interface
JP2005259875A (en) * 2004-03-10 2005-09-22 Canon Inc Field effect transistor and its manufacturing method
JP2006100757A (en) * 2004-08-30 2006-04-13 Seiko Epson Corp Semiconductor device, manufacturing method of semiconductor device, electro-optical device, and electronic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000059040A1 (en) * 1999-03-30 2000-10-05 Seiko Epson Corporation Method of manufacturing thin-film transistor
JP2005509299A (en) * 2001-11-05 2005-04-07 スリーエム イノベイティブ プロパティズ カンパニー Organic thin film transistor with siloxane polymer interface
JP2005259875A (en) * 2004-03-10 2005-09-22 Canon Inc Field effect transistor and its manufacturing method
JP2006100757A (en) * 2004-08-30 2006-04-13 Seiko Epson Corp Semiconductor device, manufacturing method of semiconductor device, electro-optical device, and electronic device

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