WO2008117358A1 - 電子ビーム装置 - Google Patents

電子ビーム装置 Download PDF

Info

Publication number
WO2008117358A1
WO2008117358A1 PCT/JP2007/055897 JP2007055897W WO2008117358A1 WO 2008117358 A1 WO2008117358 A1 WO 2008117358A1 JP 2007055897 W JP2007055897 W JP 2007055897W WO 2008117358 A1 WO2008117358 A1 WO 2008117358A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
beam device
fluctuation value
fluctuation
beam current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/055897
Other languages
English (en)
French (fr)
Inventor
Masaki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to PCT/JP2007/055897 priority Critical patent/WO2008117358A1/ja
Priority to JP2009506071A priority patent/JPWO2008117358A1/ja
Priority to US12/532,366 priority patent/US20100102254A1/en
Publication of WO2008117358A1 publication Critical patent/WO2008117358A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00456—Recording strategies, e.g. pulse sequences
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261—Preparing a master, e.g. exposing photoresist, electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Electron Beam Exposure (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

　描画の実行時において、基板への非照射時における電子ビームのビーム電流を検出するビーム電流検出器と、上記ビーム電流に基づいて電子ビームの変動値を算出する変動値算出器と、上記変動値に基づいて描画時の電子ビーム変動を補正する補正器と、を有している。
PCT/JP2007/055897 2007-03-22 2007-03-22 電子ビーム装置 Ceased WO2008117358A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2007/055897 WO2008117358A1 (ja) 2007-03-22 2007-03-22 電子ビーム装置
JP2009506071A JPWO2008117358A1 (ja) 2007-03-22 2007-03-22 電子ビーム装置
US12/532,366 US20100102254A1 (en) 2007-03-22 2007-03-22 Electron beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055897 WO2008117358A1 (ja) 2007-03-22 2007-03-22 電子ビーム装置

Publications (1)

Publication Number Publication Date
WO2008117358A1 true WO2008117358A1 (ja) 2008-10-02

Family

ID=39788103

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055897 Ceased WO2008117358A1 (ja) 2007-03-22 2007-03-22 電子ビーム装置

Country Status (3)

Country Link
US (1) US20100102254A1 (ja)
JP (1) JPWO2008117358A1 (ja)
WO (1) WO2008117358A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240007589A (ko) * 2022-07-08 2024-01-16 주식회사 히타치하이테크 하전 입자선 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08212950A (ja) * 1995-02-02 1996-08-20 Hitachi Ltd 荷電粒子ビーム装置
JP2001023878A (ja) * 1999-07-06 2001-01-26 Semiconductor Leading Edge Technologies Inc マスクならびに露光装置および電子ビーム寸法ドリフト補正方法
JP2001196292A (ja) * 2000-01-11 2001-07-19 Seiko Instruments Inc イオンビーム加工位置補正方法
JP2004086935A (ja) * 2002-08-22 2004-03-18 Sony Corp 原盤露光装置及び原盤露光方法
JP2004096008A (ja) * 2002-09-03 2004-03-25 Nikon Corp 荷電粒子線露光装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1369896A3 (en) * 1996-03-04 2004-12-22 Canon Kabushiki Kaisha Electron beam exposure apparatus and method and device manufacturing method
JP3889743B2 (ja) * 2003-12-05 2007-03-07 株式会社東芝 荷電ビーム描画方法及び描画装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08212950A (ja) * 1995-02-02 1996-08-20 Hitachi Ltd 荷電粒子ビーム装置
JP2001023878A (ja) * 1999-07-06 2001-01-26 Semiconductor Leading Edge Technologies Inc マスクならびに露光装置および電子ビーム寸法ドリフト補正方法
JP2001196292A (ja) * 2000-01-11 2001-07-19 Seiko Instruments Inc イオンビーム加工位置補正方法
JP2004086935A (ja) * 2002-08-22 2004-03-18 Sony Corp 原盤露光装置及び原盤露光方法
JP2004096008A (ja) * 2002-09-03 2004-03-25 Nikon Corp 荷電粒子線露光装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240007589A (ko) * 2022-07-08 2024-01-16 주식회사 히타치하이테크 하전 입자선 장치
TWI877649B (zh) * 2022-07-08 2025-03-21 日商日立全球先端科技股份有限公司 帶電粒子束裝置
KR102800691B1 (ko) 2022-07-08 2025-04-29 주식회사 히타치하이테크 하전 입자선 장치
US12456598B2 (en) 2022-07-08 2025-10-28 Hitachi High-Tech Corporation Charged particle beam apparatus

Also Published As

Publication number Publication date
JPWO2008117358A1 (ja) 2010-07-08
US20100102254A1 (en) 2010-04-29

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