WO2008113337A3 - Circuit comportant au moins deux niveaux de commutation montés électriquement en série côté sortie - Google Patents

Circuit comportant au moins deux niveaux de commutation montés électriquement en série côté sortie Download PDF

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Publication number
WO2008113337A3
WO2008113337A3 PCT/DE2008/000469 DE2008000469W WO2008113337A3 WO 2008113337 A3 WO2008113337 A3 WO 2008113337A3 DE 2008000469 W DE2008000469 W DE 2008000469W WO 2008113337 A3 WO2008113337 A3 WO 2008113337A3
Authority
WO
WIPO (PCT)
Prior art keywords
switching
series
electrically connected
output side
points electrically
Prior art date
Application number
PCT/DE2008/000469
Other languages
German (de)
English (en)
Other versions
WO2008113337A2 (fr
Inventor
Gerwin Kantelberg
Johannes Schurack
Original Assignee
Ltb Lasertechnik Berlin Gmbh
Spree Hybrid & Kommunikationst
Gerwin Kantelberg
Johannes Schurack
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ltb Lasertechnik Berlin Gmbh, Spree Hybrid & Kommunikationst, Gerwin Kantelberg, Johannes Schurack filed Critical Ltb Lasertechnik Berlin Gmbh
Publication of WO2008113337A2 publication Critical patent/WO2008113337A2/fr
Publication of WO2008113337A3 publication Critical patent/WO2008113337A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/61—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6271—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several outputs only and without selecting means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)

Abstract

L'invention concerne un circuit (10) comportant au moins deux niveaux de commutation (60, 70, 80, 500, 510) montés électriquement en série côté sortie, le circuit étant à basse impédance lorsqu'il est fermé et à haute impédance lorsqu'il est ouvert. Selon l'invention, les niveaux de commutation sont chacun reliés côté entrée à une sortie (A30) d'un transformateur de ligne (30,40,50) individuel, au moyen duquel ils peuvent être commandés de l'extérieur.
PCT/DE2008/000469 2007-03-21 2008-03-15 Circuit comportant au moins deux niveaux de commutation montés électriquement en série côté sortie WO2008113337A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007014268A DE102007014268A1 (de) 2007-03-21 2007-03-21 Schaltanordnung mit zumindest zwei ausgangsseitig elektrisch in Reihe geschalteten Schaltstufen
DE102007014268.6 2007-03-21

Publications (2)

Publication Number Publication Date
WO2008113337A2 WO2008113337A2 (fr) 2008-09-25
WO2008113337A3 true WO2008113337A3 (fr) 2009-05-28

Family

ID=39719318

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000469 WO2008113337A2 (fr) 2007-03-21 2008-03-15 Circuit comportant au moins deux niveaux de commutation montés électriquement en série côté sortie

Country Status (2)

Country Link
DE (1) DE102007014268A1 (fr)
WO (1) WO2008113337A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2326007B1 (fr) * 2009-11-19 2013-01-09 General Electric Company Circuit et topologie pour système électronique de puissance très fiable
FR2992486B1 (fr) * 2012-06-21 2015-07-17 Sagem Defense Securite Circuit electrique de coupure d'une alimentation electrique a transistors et fusibles a logique redondee
FR2992485B1 (fr) * 2012-06-21 2014-09-12 Sagem Defense Securite Circuit electrique de coupure d'une alimentation electrique a relais et fusibles
FR2992484B1 (fr) * 2012-06-21 2015-05-22 Sagem Defense Securite Circuit electrique de coupure d'une alimentation electrique a transistors et fusibles

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1116354A (en) * 1964-08-19 1968-06-06 Telefunken Patent Improvements in or relating to impedance transforming networks
GB1145974A (en) * 1965-03-26 1969-03-19 Telefunken Patent Improvements in or relating to impedance transforming and transducing networks
US3710147A (en) * 1971-06-29 1973-01-09 Plessey Handel Investment Ag Transistor switches for high voltage applications
DE3630775A1 (de) * 1986-09-10 1988-03-24 Frank Behlke Mosfet-hochspannungsschalter mit extrem kurzer schaltzeit
CA1273412A (fr) * 1986-06-13 1990-08-28 Walter E. Milberger Modulateur d'impulsion
US5763962A (en) * 1995-09-22 1998-06-09 Ecg Co., Ltd. Semiconductor switch driving circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425518A (en) 1981-03-25 1984-01-10 The United States Of America As Represented By The Secretary Of The Air Force High voltage field effect transistor pulse apparatus
US4692643A (en) * 1983-10-28 1987-09-08 Hitachi, Ltd. Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series
DD234974A1 (de) 1985-02-21 1986-04-16 Zeiss Jena Veb Carl Schneller transistor-hochleistungsschalter
GB9625821D0 (en) * 1996-12-12 1997-01-29 Hadland Photonics Limited Fast voltage ramp generator
SE515004C2 (sv) * 1998-09-01 2001-05-28 Klas Haakan Eklund Seriekoppling av aktiva halvledarkomponenter och förfarande för att seriekoppla aktiva halvledarkomponenter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1116354A (en) * 1964-08-19 1968-06-06 Telefunken Patent Improvements in or relating to impedance transforming networks
GB1145974A (en) * 1965-03-26 1969-03-19 Telefunken Patent Improvements in or relating to impedance transforming and transducing networks
US3710147A (en) * 1971-06-29 1973-01-09 Plessey Handel Investment Ag Transistor switches for high voltage applications
CA1273412A (fr) * 1986-06-13 1990-08-28 Walter E. Milberger Modulateur d'impulsion
DE3630775A1 (de) * 1986-09-10 1988-03-24 Frank Behlke Mosfet-hochspannungsschalter mit extrem kurzer schaltzeit
US5763962A (en) * 1995-09-22 1998-06-09 Ecg Co., Ltd. Semiconductor switch driving circuit

Also Published As

Publication number Publication date
DE102007014268A1 (de) 2008-10-02
WO2008113337A2 (fr) 2008-09-25

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