WO2008111198A1 - フォトマスク - Google Patents
フォトマスク Download PDFInfo
- Publication number
- WO2008111198A1 WO2008111198A1 PCT/JP2007/055129 JP2007055129W WO2008111198A1 WO 2008111198 A1 WO2008111198 A1 WO 2008111198A1 JP 2007055129 W JP2007055129 W JP 2007055129W WO 2008111198 A1 WO2008111198 A1 WO 2008111198A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- photomask
- projections
- ring
- damage
- Prior art date
Links
- 238000007599 discharging Methods 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
【課題】従来に比べて静電気等によるパターンの破損をより確実に回避できるフォトマスクを提供する。 【解決手段】フォトマスクに設けられたリング状のパターンに、その縁部から当該パターンの幅方向の中心に向けて突出する突起25が設けられている。リング状のパターンとしては、例えば耐湿リングを形成するためのパターンがある。突起25間の間隔Sは放電が発生しやすいように、例えば10μmに設定される。何らかの原因によりフォトマスクに静電気が蓄積された場合、突起25間で放電が発生し、パターンの破損を防止する。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/055129 WO2008111198A1 (ja) | 2007-03-14 | 2007-03-14 | フォトマスク |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/055129 WO2008111198A1 (ja) | 2007-03-14 | 2007-03-14 | フォトマスク |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008111198A1 true WO2008111198A1 (ja) | 2008-09-18 |
Family
ID=39759149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/055129 WO2008111198A1 (ja) | 2007-03-14 | 2007-03-14 | フォトマスク |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008111198A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012507750A (ja) * | 2008-10-31 | 2012-03-29 | アルテラ コーポレイション | 静電気放電保護構造を有するフォトリソグラフィレクチル |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5623936U (ja) * | 1979-07-31 | 1981-03-04 | ||
JPH1069054A (ja) * | 1996-08-26 | 1998-03-10 | Mitsubishi Electric Corp | フォトマスクおよびその製造方法 |
JPH10104814A (ja) * | 1996-09-27 | 1998-04-24 | Fujitsu Ltd | マスクの製造方法 |
JP2002532758A (ja) * | 1998-12-14 | 2002-10-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | リング状esd保護領域を設けたマスク縁部を有するフォトマスク |
JP2006293376A (ja) * | 2002-03-15 | 2006-10-26 | Fujitsu Ltd | 位相シフトマスク |
-
2007
- 2007-03-14 WO PCT/JP2007/055129 patent/WO2008111198A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5623936U (ja) * | 1979-07-31 | 1981-03-04 | ||
JPH1069054A (ja) * | 1996-08-26 | 1998-03-10 | Mitsubishi Electric Corp | フォトマスクおよびその製造方法 |
JPH10104814A (ja) * | 1996-09-27 | 1998-04-24 | Fujitsu Ltd | マスクの製造方法 |
JP2002532758A (ja) * | 1998-12-14 | 2002-10-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | リング状esd保護領域を設けたマスク縁部を有するフォトマスク |
JP2006293376A (ja) * | 2002-03-15 | 2006-10-26 | Fujitsu Ltd | 位相シフトマスク |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012507750A (ja) * | 2008-10-31 | 2012-03-29 | アルテラ コーポレイション | 静電気放電保護構造を有するフォトリソグラフィレクチル |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USD658119S1 (en) | Metallization pattern of a solar cell | |
WO2011109327A3 (en) | Dispensable face mask and method of making the same | |
USD637299S1 (en) | Tape bandage roll | |
WO2010102116A3 (en) | Photovoltaic cell having multiple electron donors | |
WO2009038683A3 (en) | Solid forms of n-[2,4-bis(1,1-dimethylethyl)-5-hydroxyphenyl]-1,4-dihydro-4-oxoquinoline-3-carboxamide | |
WO2008089043A3 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
WO2012003351A3 (en) | Web material and method for making same | |
TW200710936A (en) | MEMS devices having support structures and methods of fabricating the same | |
WO2008150967A3 (en) | A lead-acid battery separator having enhanced stiffness | |
WO2007123806A3 (en) | Imprint lithography system | |
WO2007021676A3 (en) | Fuel cell component with coating including nanoparticles | |
GB2468438A (en) | Turbine nozzle segment | |
WO2011022423A3 (en) | Nanowire grid polarizers and methods for fabricating the same | |
CN104368509B (zh) | 回风可控式飘浮烘箱风嘴 | |
GB0504576D0 (en) | Turbine blades and methods for depositing an erosion resistant coating on the same | |
WO2009129809A3 (de) | Vorrichtung und verfahren für den hochwasser-, küsten- oder kolkschutz | |
WO2009120746A3 (en) | Crystalline forms of sitagliptin phosphate | |
USD653700S1 (en) | Typeface | |
BR112015008811A2 (pt) | composto, material de revestimento, substrato, e, método para revestir um substrato | |
WO2007049217A3 (en) | Method for manufacturing razor blades | |
WO2010024636A3 (en) | Thin-film type solar cell and method for manufacturing the same | |
FR2949773B1 (fr) | Materiau solide a l'etat divise, procede de fabrication d'un tel materiau et utilisation d'un tel materiau dans une cellule photovoltaique. | |
AR073334A1 (es) | Composiciones de recubrimiento en polvo, metodos para su preparacion y substratos recubiertos relacionados | |
WO2010053747A3 (en) | Rock crusher counterweight oil deflection plates | |
WO2011008521A3 (en) | Plate fin with hybrid hole pattern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07738599 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07738599 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: JP |