WO2008111187A1 - Oscillator, and semiconductor device - Google Patents

Oscillator, and semiconductor device Download PDF

Info

Publication number
WO2008111187A1
WO2008111187A1 PCT/JP2007/055051 JP2007055051W WO2008111187A1 WO 2008111187 A1 WO2008111187 A1 WO 2008111187A1 JP 2007055051 W JP2007055051 W JP 2007055051W WO 2008111187 A1 WO2008111187 A1 WO 2008111187A1
Authority
WO
WIPO (PCT)
Prior art keywords
fets
capacitor
oscillator
power source
side power
Prior art date
Application number
PCT/JP2007/055051
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Miyagi
Original Assignee
Neuro Solution Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neuro Solution Corp. filed Critical Neuro Solution Corp.
Priority to PCT/JP2007/055051 priority Critical patent/WO2008111187A1/en
Priority to JP2009503828A priority patent/JPWO2008111187A1/en
Publication of WO2008111187A1 publication Critical patent/WO2008111187A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0098—Functional aspects of oscillators having a balanced output signal

Abstract

Intended is to provide an oscillator capable of reducing the distortion of an output waveform, and a semiconductor device. The oscillator (30) comprises an N-channel type FET (31) having a drain connected with a positive-pole side power source line, a P-channel type FET (33) having a drain connected with a negative-pole side power source line and a source connected with the source of the FET (31), first and second bias circuits for applying bias voltages to the respective gates of the FETs (31 and 33), a capacitor (35) inserted between the gates of the FETs (31 and 33) and the sources of the FETs (31 and 33), a capacitor (36) inserted between the negative-pole side power source line and the sources of the FETs (31 and 33), and a quartz vibrator (52) having one terminal connected with one terminal of the capacitor (35) corresponding to the gate sides of the FETs (31 and 33). This oscillator (30) has such a symmetric structure across a capacitor (40) as has a constitution similar to the aforementioned constitution on the other side across the capacitor (40).
PCT/JP2007/055051 2007-03-14 2007-03-14 Oscillator, and semiconductor device WO2008111187A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/055051 WO2008111187A1 (en) 2007-03-14 2007-03-14 Oscillator, and semiconductor device
JP2009503828A JPWO2008111187A1 (en) 2007-03-14 2007-03-14 Oscillator and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055051 WO2008111187A1 (en) 2007-03-14 2007-03-14 Oscillator, and semiconductor device

Publications (1)

Publication Number Publication Date
WO2008111187A1 true WO2008111187A1 (en) 2008-09-18

Family

ID=39759138

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055051 WO2008111187A1 (en) 2007-03-14 2007-03-14 Oscillator, and semiconductor device

Country Status (2)

Country Link
JP (1) JPWO2008111187A1 (en)
WO (1) WO2008111187A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128254A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Oscillator
JPS5451359A (en) * 1977-09-30 1979-04-23 Toshiba Corp Correcting circuit for fet characteristics
JPH059016U (en) * 1991-07-09 1993-02-05 アキユフエーズ株式会社 Power amplifier
JPH08274540A (en) * 1995-03-31 1996-10-18 Sony Corp Oscillator
JP2004159114A (en) * 2002-11-07 2004-06-03 Niigata Seimitsu Kk Quartz oscillator and semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128254A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Oscillator
JPS5451359A (en) * 1977-09-30 1979-04-23 Toshiba Corp Correcting circuit for fet characteristics
JPH059016U (en) * 1991-07-09 1993-02-05 アキユフエーズ株式会社 Power amplifier
JPH08274540A (en) * 1995-03-31 1996-10-18 Sony Corp Oscillator
JP2004159114A (en) * 2002-11-07 2004-06-03 Niigata Seimitsu Kk Quartz oscillator and semiconductor device

Also Published As

Publication number Publication date
JPWO2008111187A1 (en) 2010-06-24

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