WO2008110244A3 - Isolatorschichtsystem für einen sensor und sensor mit einem solchen isolatorschichtsystem - Google Patents

Isolatorschichtsystem für einen sensor und sensor mit einem solchen isolatorschichtsystem Download PDF

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Publication number
WO2008110244A3
WO2008110244A3 PCT/EP2008/001142 EP2008001142W WO2008110244A3 WO 2008110244 A3 WO2008110244 A3 WO 2008110244A3 EP 2008001142 W EP2008001142 W EP 2008001142W WO 2008110244 A3 WO2008110244 A3 WO 2008110244A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
sensor
insulating layer
layer system
transition area
Prior art date
Application number
PCT/EP2008/001142
Other languages
English (en)
French (fr)
Other versions
WO2008110244A2 (de
Inventor
Wolfgang Kurt Brode
Original Assignee
Hydac Electronic Gmbh
Wolfgang Kurt Brode
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hydac Electronic Gmbh, Wolfgang Kurt Brode filed Critical Hydac Electronic Gmbh
Publication of WO2008110244A2 publication Critical patent/WO2008110244A2/de
Publication of WO2008110244A3 publication Critical patent/WO2008110244A3/de

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft ein Isolatorschichtsystem (10) für einen Sensor (1), insbesondere für einen in Dünn- oder Dickschichttechnik hergestellten Druck- oder Kraftsensor, mit einem Schichtsystem (10), das eine erste Schicht und eine zweite Schicht aufweist, wobei die erste Schicht ein erstes Element aufweist und die zweite Schicht ein zweites Element aufweist, das von dem ersten Element verschieden ist, dadurch gekennzeichnet, dass der Übergang zwischen der ersten Schicht und der zweiten Schicht durch einen Übergangsbereich (14, 18, 22, 26) gebildet ist, dass die Konzentration des ersten Elements im Übergangsbereich (14, 18, 22, 26) ausgehend von einem der ersten Schicht zugewandten Ende des Übergangsbereichs (14, 18, 22, 26) in Richtung auf ein der zweiten Schicht zugewandtes Ende des Übergangsbereichs (14, 18, 22, 26) mindestens abschnittsweise kontinuierlich zunimmt und/oder abnimmt, und/oder dass die Konzentration des zweiten Elements im Übergangsbereich (14, 18, 22, 26) ausgehend von einem der zweiten Schicht zugewandten Ende des Übergangsbereichs (14, 18, 22, 26) in Richtung auf ein der ersten Schicht zugewandtes Ende des Übergangsbereichs (14, 18, 22, 26) mindestens abschnittsweise kontinuierlich zunimmt und/oder abnimmt, sowie einen Sensor (1) mit einem solchen Isolatorschichtsystem (10).
PCT/EP2008/001142 2007-03-13 2008-02-15 Isolatorschichtsystem für einen sensor und sensor mit einem solchen isolatorschichtsystem WO2008110244A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007011878A DE102007011878A1 (de) 2007-03-13 2007-03-13 Isolatorschichtsystem für einen Sensor und Sensor mit einem solchen Isolatorschichtsystem
DE102007011878.5 2007-03-13

Publications (2)

Publication Number Publication Date
WO2008110244A2 WO2008110244A2 (de) 2008-09-18
WO2008110244A3 true WO2008110244A3 (de) 2008-10-30

Family

ID=39688027

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/001142 WO2008110244A2 (de) 2007-03-13 2008-02-15 Isolatorschichtsystem für einen sensor und sensor mit einem solchen isolatorschichtsystem

Country Status (2)

Country Link
DE (1) DE102007011878A1 (de)
WO (1) WO2008110244A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009056159A1 (en) * 2007-11-02 2009-05-07 Aktiebolaget Skf Combination of bearing component and sensor
CN104870960B (zh) * 2012-12-17 2017-05-17 丹佛斯公司 包括基板的传感器
DE112014002776T5 (de) * 2013-06-11 2016-03-17 Danfoss A/S Dünnschichtsensor
DE102013110376A1 (de) * 2013-09-19 2015-03-19 Endress + Hauser Gmbh + Co. Kg Messgerät mit einem Halbleitersensor und einem metallischen Stützkörper
WO2016026541A1 (de) * 2014-08-20 2016-02-25 Endress+Hauser Gmbh+Co. Kg Druckmesszelle

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319397A (en) * 1979-07-10 1982-03-16 Hitachi, Ltd. Method of producing semiconductor displacement transducer
US4840067A (en) * 1986-06-13 1989-06-20 Nippon Soken, Inc. Semiconductor pressure sensor with method diaphragm
US4970487A (en) * 1987-12-11 1990-11-13 Aisin Seiki Kabushiki Kaisha Pressure sensor
US5867886A (en) * 1997-10-20 1999-02-09 Delco Electronics Corp. Method of making a thick film pressure sensor
US5898359A (en) * 1997-12-19 1999-04-27 Delco Electronics Corp. Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith
DE10036284A1 (de) * 2000-07-26 2002-02-07 Bosch Gmbh Robert Herstellungsverfahren für ein Sensorbauelement, insbesondere Dünnschicht-Hochdrucksensor und Sensorbauelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD296571B5 (de) * 1990-07-12 1998-06-10 Inst Halbleiterphysik Gmbh SOI-Substrat

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319397A (en) * 1979-07-10 1982-03-16 Hitachi, Ltd. Method of producing semiconductor displacement transducer
US4840067A (en) * 1986-06-13 1989-06-20 Nippon Soken, Inc. Semiconductor pressure sensor with method diaphragm
US4970487A (en) * 1987-12-11 1990-11-13 Aisin Seiki Kabushiki Kaisha Pressure sensor
US5867886A (en) * 1997-10-20 1999-02-09 Delco Electronics Corp. Method of making a thick film pressure sensor
US5898359A (en) * 1997-12-19 1999-04-27 Delco Electronics Corp. Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith
DE10036284A1 (de) * 2000-07-26 2002-02-07 Bosch Gmbh Robert Herstellungsverfahren für ein Sensorbauelement, insbesondere Dünnschicht-Hochdrucksensor und Sensorbauelement

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUSANO E ET AL: "ADHESION AND HARDNESS OF COMPOSITIONALLY GRADIENT TIO2/TI/TIN,ZRO2/ZR/ZRN, AND TIO2/TI/ZR/ZRN COATINGS", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 334, no. 1/02, 4 December 1998 (1998-12-04), pages 151 - 155, XP000669271, ISSN: 0040-6090 *
VISSER M M ET AL: "Sodium distribution in thin-film anodic bonding", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 92, no. 1-3, 1 August 2001 (2001-08-01), pages 223 - 228, XP004274050, ISSN: 0924-4247 *

Also Published As

Publication number Publication date
DE102007011878A1 (de) 2008-09-18
WO2008110244A2 (de) 2008-09-18

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