WO2008108244A1 - 電子デバイス、電子デバイスの製造方法、封止膜の構造体、電子デバイスを製造する製造装置およびプラズマ処理装置 - Google Patents

電子デバイス、電子デバイスの製造方法、封止膜の構造体、電子デバイスを製造する製造装置およびプラズマ処理装置 Download PDF

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Publication number
WO2008108244A1
WO2008108244A1 PCT/JP2008/053402 JP2008053402W WO2008108244A1 WO 2008108244 A1 WO2008108244 A1 WO 2008108244A1 JP 2008053402 W JP2008053402 W JP 2008053402W WO 2008108244 A1 WO2008108244 A1 WO 2008108244A1
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WIPO (PCT)
Prior art keywords
electronic device
plasma
gas
generated
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053402
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English (en)
French (fr)
Inventor
Kazuki Moyama
Yasunori Torii
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2008108244A1 publication Critical patent/WO2008108244A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

【課題】膜の封止性を保持しつつ膜の内部応力を低減した封止膜により素子を保護する。 【解決手段】マイクロ波プラズマ処理装置は、有機ＥＬ素子が形成された基板Ｇを載置するサセプタ４１１と、処理容器内にガスを供給するガス供給源４４３とを有し、処理容器内に供給されたガスからプラズマを生成し、生成されたプラズマにより基板Ｇを処理する。ガス供給源４４３は、まず、炭素成分を含有する第１のガスを供給し、供給された第１のガスからプラズマを生成し、生成されたプラズマによりサセプタ４１１に載置された基板Ｇ上のメタル電極５２０に所定量の炭素成分を含有した応力緩和膜５３０を積層する。その後、ガス供給源４４３から炭素成分を含有しない第２のガスを供給し、供給された第２のガスからプラズマを生成し、生成されたプラズマにより応力緩和膜５３０上に炭素成分を含有しないバリア膜５４０を積層する。
PCT/JP2008/053402 2007-03-08 2008-02-27 電子デバイス、電子デバイスの製造方法、封止膜の構造体、電子デバイスを製造する製造装置およびプラズマ処理装置 Ceased WO2008108244A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-058528 2007-03-08
JP2007058528A JP2008226472A (ja) 2007-03-08 2007-03-08 電子デバイス、電子デバイスの製造方法、封止膜の構造体、電子デバイスを製造する製造装置およびプラズマ処理装置

Publications (1)

Publication Number Publication Date
WO2008108244A1 true WO2008108244A1 (ja) 2008-09-12

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ID=39738129

Family Applications (1)

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PCT/JP2008/053402 Ceased WO2008108244A1 (ja) 2007-03-08 2008-02-27 電子デバイス、電子デバイスの製造方法、封止膜の構造体、電子デバイスを製造する製造装置およびプラズマ処理装置

Country Status (3)

Country Link
JP (1) JP2008226472A (ja)
TW (1) TW200901814A (ja)
WO (1) WO2008108244A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064479A (ja) * 2010-09-17 2012-03-29 Casio Comput Co Ltd 発光装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101347471B1 (ko) 2009-09-29 2014-01-02 샤프 가부시키가이샤 유기 ｅｌ 디바이스 및 유기 ｅｌ 디바이스의 제조 방법
JP5683245B2 (ja) * 2010-12-08 2015-03-11 富士フイルム株式会社 撮像素子及び撮像素子の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208253A (ja) * 1999-01-19 2000-07-28 Denso Corp 有機ｅｌ素子およびその製造方法
JP2004047409A (ja) * 2001-10-30 2004-02-12 Semiconductor Energy Lab Co Ltd 発光装置
JP2004063304A (ja) * 2002-07-30 2004-02-26 Shimadzu Corp 保護膜製造方法および有機ｅｌ素子
JP2005116483A (ja) * 2003-10-10 2005-04-28 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2005166400A (ja) * 2003-12-02 2005-06-23 Samco Inc 表面保護膜
JP2005203321A (ja) * 2004-01-19 2005-07-28 Pioneer Electronic Corp 保護膜および有機ｅｌ素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208253A (ja) * 1999-01-19 2000-07-28 Denso Corp 有機ｅｌ素子およびその製造方法
JP2004047409A (ja) * 2001-10-30 2004-02-12 Semiconductor Energy Lab Co Ltd 発光装置
JP2004063304A (ja) * 2002-07-30 2004-02-26 Shimadzu Corp 保護膜製造方法および有機ｅｌ素子
JP2005116483A (ja) * 2003-10-10 2005-04-28 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2005166400A (ja) * 2003-12-02 2005-06-23 Samco Inc 表面保護膜
JP2005203321A (ja) * 2004-01-19 2005-07-28 Pioneer Electronic Corp 保護膜および有機ｅｌ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064479A (ja) * 2010-09-17 2012-03-29 Casio Comput Co Ltd 発光装置

Also Published As

Publication number Publication date
TW200901814A (en) 2009-01-01
JP2008226472A (ja) 2008-09-25

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