WO2008108111A1 - 磁性体装置及び磁気記憶装置 - Google Patents

磁性体装置及び磁気記憶装置 Download PDF

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Publication number
WO2008108111A1
WO2008108111A1 PCT/JP2008/050620 JP2008050620W WO2008108111A1 WO 2008108111 A1 WO2008108111 A1 WO 2008108111A1 JP 2008050620 W JP2008050620 W JP 2008050620W WO 2008108111 A1 WO2008108111 A1 WO 2008108111A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic body
layers
magnetic
laminate film
function
Prior art date
Application number
PCT/JP2008/050620
Other languages
English (en)
French (fr)
Inventor
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009502475A priority Critical patent/JP5163638B2/ja
Publication of WO2008108111A1 publication Critical patent/WO2008108111A1/ja

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Laminated Bodies (AREA)

Abstract

　磁性体装置は、磁性体積層膜２０と機能体４とを具備する。磁性体積層膜２０は、一方向に長い導電体の配線５の一つの面に対面して、配線５に沿って設けられる。機能体４は、配線５に流れる電流で誘起される磁場との相互作用により機能を具現化する。磁性体積層膜２０は、複数の磁性体層２と複数の磁性体層の各々の間に設けられた少なくとも一つの非磁性導電体層３、１１とを備える。非磁性導電体層３、１１が両側の磁性体層２を強磁性結合又は反強磁性結合させる。非磁性導電体層３の少なくとも一つが両側の磁性体層２を反強磁性結合させる。複数の磁性体層２の磁化量の総和がほぼゼロである。複数の磁性体層２のうち、第１方向に向く磁性体層群の異方性磁界の大きさと逆の第２方向に向く磁性体層群の異方性磁界の大きさとが異なる。
PCT/JP2008/050620 2007-03-07 2008-01-18 磁性体装置及び磁気記憶装置 WO2008108111A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009502475A JP5163638B2 (ja) 2007-03-07 2008-01-18 磁性体装置及び磁気記憶装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-057840 2007-03-07
JP2007057840 2007-03-07

Publications (1)

Publication Number Publication Date
WO2008108111A1 true WO2008108111A1 (ja) 2008-09-12

Family

ID=39738007

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050620 WO2008108111A1 (ja) 2007-03-07 2008-01-18 磁性体装置及び磁気記憶装置

Country Status (2)

Country Link
JP (1) JP5163638B2 (ja)
WO (1) WO2008108111A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112531105A (zh) * 2019-09-18 2021-03-19 铠侠股份有限公司 磁存储器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7154770B2 (ja) 2018-01-31 2022-10-18 株式会社豊田自動織機 ウォータージェット織機の水噴射装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128011A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 磁気メモリ
JP2004140091A (ja) * 2002-10-16 2004-05-13 Toshiba Corp 磁気ランダムアクセスメモリ
JP2005072139A (ja) * 2003-08-21 2005-03-17 Sony Corp 磁気記憶装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134363A (ja) * 2002-07-29 2006-05-25 Nec Corp 磁気ランダムアクセスメモリ
US7477538B2 (en) * 2003-06-20 2009-01-13 Nec Corporation Magnetic random access memory
JP5050318B2 (ja) * 2005-05-31 2012-10-17 Ｔｄｋ株式会社 磁気メモリ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128011A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 磁気メモリ
JP2004140091A (ja) * 2002-10-16 2004-05-13 Toshiba Corp 磁気ランダムアクセスメモリ
JP2005072139A (ja) * 2003-08-21 2005-03-17 Sony Corp 磁気記憶装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112531105A (zh) * 2019-09-18 2021-03-19 铠侠股份有限公司 磁存储器
CN112531105B (zh) * 2019-09-18 2023-12-26 铠侠股份有限公司 磁存储器

Also Published As

Publication number Publication date
JP5163638B2 (ja) 2013-03-13
JPWO2008108111A1 (ja) 2010-06-10

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