WO2008101494A1

WO2008101494A1 - Apparatus for the pulsed laser deposition (pld) of layers on substrates

Info

Publication number: WO2008101494A1
Application number: PCT/DE2008/000338
Authority: WO
Inventors: Günter Reisse; Steffen Weissmantel; Dirk Rost
Original assignee: Laserinstitut Mittelsachsen E.V.
Priority date: 2007-02-22
Filing date: 2008-02-22
Publication date: 2008-08-28
Also published as: DE102007009487A1

Abstract

The invention relates to apparatuses for the pulsed laser deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) having predominantly tetrahedral bonds (ta-C layers) and of cubic boron nitride layers (c-BN layers), on substrates using devices for generating a vacuum, comprising at least one device for ion beam or plasma generation, using lasers having devices for guiding, shaping, focusing and scanning laser beams, and at least one transport device for at least one carrier. These apparatuses are characterized particularly in that the layers can be produced predominantly without stress. For this purpose, at least one coating/pretreatment chamber, a coating chamber, and a removal chamber are disposed consecutively, which can each be separately evacuated up to high vacuum by means of a device for creating a vacuum, and can be separately vented, and are separated from each other by means of vacuum locks, wherein at least one carrier each comprising at least one substrate holder for receiving at least one substrate can be moved from chamber to chamber by means of the transport device when the vacuum lock is open.

Description

description

Device for laser pulse deposition (PLD) of layers on substrates

The invention relates to devices for laser pulse deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride (c-BN layers), on substrates with means for vacuum generation, with at least a device for ion beam or plasma generation, with lasers with devices for guiding, shaping, focusing and scanning of laser beams and with at least one transport device for at least one carrier.

DE 44 17 114 A 1 (device and method for particle-selective deposition of thin layers by means of laser pulse deposition - PLD) relates to a device and a method by means of which, for example, high-purity thin layers can be produced. This is achieved with a device which contains at least one target, a substrate, a process gas, a device for generating a high-frequency electric field and a device for generating an electrical substrate bias. In this case, a laser plasma is generated on the target surface by a laser pulse, which is directed into the lying above the substrate surface half-space. Furthermore, a process gas is entered. In addition, a high-frequency electric field and an electric field generated by the substrate bias are built up in the half-space above the substrate surface.

DE 201 20 783 U1 (system for depositing thin layers) discloses a system for depositing thin layers on a substrate by means of pulsed laser deposition, with cylindrical target material, wherein one or more laser sources are focused on at least two locations on the target material. These solutions are limited to the coating of the substrates. Pre- and post-treatments of the substrates and the deposited layers are not provided. The invention defined in claim 1 is based on the object to provide devices for laser pulse deposition (PLD) of layers so that preferably diamond-like carbon layers with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride (c-BN layers) on variously shaped and can also be generated on temperature-sensitive substrates mainly stress-free.

This object is achieved with the features listed in claim 1.

The devices for laser pulse deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride layers (c-BN layers), on substrates with means for generating vacuum, with at least one device For ion beam or plasma generation, with lasers with devices for guiding, shaping, focusing and scanning of laser beams and with at least one transport device for at least one carrier, are characterized in particular by the fact that the layers can be generated predominantly stress-free. These are each at least one feed / pre-treatment chamber, a

Each coating chamber and a removal chamber arranged in succession, each separately via a vacuum generating device to high vacuum evacuated and separately ventilated and separated by vacuum locks, each with at least one carrier with at least one substrate holder for receiving at least one substrate by means of the transport device with open vacuum lock chamber is movable to chamber.

In each of the chambers, in each case at least one carrier with at least one substrate holder for receiving at least one substrate is arranged, which can be transported from chamber to chamber by means of suitable transport devices when the vacuum lock is open. The introduction of the carrier loaded with at least one uncoated substrate into the aerated charging / pretreatment chamber and the removal of the carrier laden with the at least one coated substrate from the ventilated removal chamber is effected by means of a chamber which can be sealed in a vacuum-tight manner. doors.

In the feed Z pretreatment chamber either at least one ion source for ion beam pretreatment of the substrate or at least one device for generating a plasma for plasma pretreatment of the substrate is arranged. By controlled relative movement between the ion beam or the plasma and the substrate by means of moving devices for the carrier and the substrate holder, a homogeneous pretreatment of the entire substrate or a substrate charge on the carrier is ensured. Components of at least one target station and at least one voltage reduction station are respectively arranged in and outside the coating chamber. The

Target station consists of a mounted in the coating chamber target holder with at least one target, which is arranged in Ablationsposition and at a predetermined distance to the substrate located on the carrier in the coating position. As a further constituent of the target station, at least one laser and at least one device for guiding, shaping, focusing and scanning a laser beam, the target laser beam, are arranged outside the coating chamber via the target located in the ablation position and a device for coupling this target laser beam onto the target Target flanged to the coating chamber. In this case, the target laser beam is directed onto the target surface at a predetermined angle of incidence of less than 70 degrees, so that the laser beam energy is deposited in a small target volume and thereby an intensive target particle stream with as high a particle energy as possible is wandered off.

The stress reduction station for the laser-induced reduction of the stresses of deposited sublayers of predetermined thickness on the substrate located in the relaxation position on the carrier consists of at least one

Laser and at least one arranged outside the coating chamber means for guiding, shaping, focusing and scanning at least one laser beam and a flanged to the coating chamber means for coupling this laser beam, the substrate laser beam, with a predetermined cross-section on the layer surface. The target located in the ablation position and the substrate in the coating position on the carrier are furthermore preferably arranged opposite one another and at a small distance from one another to achieve a high layer deposition rate and / or are additionally controlled moved relative to one another, so that the layer-forming particle stream ablauerte from the target perpendicular or largely perpendicular, but not incident at an angle of incidence of greater than 60 degrees to the respective substrate or growing layer surface and deposited sub-layers of homogeneous and predetermined thickness or with a predetermined lateral Dickengradienten , With increasing angle of incidence, a slightly higher target laser beam fluence for increasing the target particle energy is to be selected, so that the required energy and pulse entry into the growing sublayer is still ensured by the target particles despite a larger angle of incidence, but no grazing incidence with incidence angles of greater than 60 degrees. In grazing incidence of the target particles on the substrate or growing layer surface of the energy and momentum entry of the target particles in the growing layer surface and the subplantation depth of the tarnished by the target, layer-forming particles in the layer surface are too low for the formation of the predetermined layer properties, such as a high sp ³ binding fraction in ta-C layers and the formation of the c-BN layer phase, even at very high fluences.

Furthermore, the internal stresses of sub-layers of predetermined thickness over the entire sub-layer area and the entire sub-layer thickness are reduced homogeneously or with predetermined gradients laterally over the sub-layer area and over the sub-layer thickness by suitable arrangement and relative movement of the substrate located in the voltage reduction position on the carrier and the substrate laser beam ,

The deposition of sublayers and the stress reduction of deposited sublayers preferably takes place alternately until the predefined overall layer thickness is reached.

The coating position and the voltage reduction position of the substrates on the carrier can be the same or different. In the same position, the substrate laser beam pulses for reducing the voltage are preferably directed alternately between the layer-forming target particle current pulses ablated by the target and after several target particle current pulses on the deposited sub-layer. In a different position, the substrate in the coating position is moved after the deposition of a sublayer of predetermined thickness by movement of the carrier in the voltage reduction position. In addition, the components of the device are coupled to a data processing system, so that with a program, a control of the transport of the carrier and a predetermined variation of all parameters for the pretreatment, for the coating and the voltage reduction process takes place.

Advantageous embodiments of the invention are specified in the claims 2 to 35.

The carrier as a carrier of the at least one substrate holder and the at least one substrate according to the embodiment of claim 2 has the shape of a disc, a disc ring, a plate, a frame or a prism. In addition, the carrier is at least in the coating chamber for realizing a predetermined lateral relative movement of the substrate preferably parallel to the surface of the target located in Ablationsposition coupled with at least one drive to achieve a homogeneous or predetermined lateral layer thickness distribution and stress reduction.

For the cyclic continuous or stepwise transport of the substrate into the coating position and into the stress reduction position and for achieving a homogeneous or predetermined lateral layer thickness distribution and stress reduction, a predetermined relative movement of the carrier, preferably parallel to the surface of the target located in the ablation position, is realized.

The carrier is formed according to the embodiment of claim 3 as a disc or disc ring. For the cyclic continuous or stepwise transport of the substrate into the coating position and into the stress reduction position and for achieving a homogeneous or predetermined lateral layer thickness distribution and stress reduction, a predetermined relative movement, preferably parallel to the surface of the target located in the ablation position, is realized. This is done by controlled continuous rotation of the carrier at a predetermined angular velocity or by stepwise rotation by predetermined angle about its preferably perpendicular to the target surface symmetry axis by means of existing drives and optionally also by controlled lateral and parallel Shift relative to the target by means of existing movement devices.

The carrier is formed according to a further development of claim 4 as a prism and arranged so that this rotatable about its preferably parallel to the target surface axis of symmetry gradually by predetermined angle corresponding to the number of substrates covered with prism shell surfaces and to realize a predetermined relative movement of the substrates to the surface of in ablation position targets laterally and preferably parallel relative to the target surface by means of existing movement means is predetermined displaceable.

According to the embodiment of claim 5, at least one moving device for the substrate holder is integrated in the carrier so that the substrate rotates about its axis of symmetry or about its center of symmetry at a predetermined angular velocity and / or is inclined cyclically over a predetermined angular range to the target surface.

Thus, an improvement in the homogeneity of the layer thickness distribution and the voltage reduction can be achieved. For complicated three-dimensional substrate surface geometries, such as drills and cutters, the substrates can be simultaneously cyclically tilted over a given angular range to the target surface.

Due to the predetermined relative movement of the carrier and rotation and optionally cyclical inclination of the substrate during the layer growth process, a vertical incidence of the ablauerten target particles on the respective substrate or layer surface is at least temporarily, whereby the incident depleted energetic target particles required for the formation of specific layer properties energy and Ensure impulse entry into the growing layer surface. For example, a high sp ³ bond fraction can be generated in ta-C layers or the cubic boron nitride phase in c-BN layers.

The target holder is formed according to the embodiment of claim 6 disc-shaped or disc-ring-shaped. Furthermore, the target holder has a plurality of circularly arranged target holders for receiving and for cooling or heating of preferably disk-shaped targets or of radial or tangential on the target holder arranged cylindrical targets. These consist of a target material or various target materials. In addition, the target station has a device for rotating the target holder about its axis of symmetry by predetermined angles corresponding to the number of targets for rotation of the individual targets in the ablation position.

According to the embodiment of claim 7, the target holder has at least one device for rotating the target located in the ablation position about its axis of symmetry at a predetermined angular velocity.

According to the embodiment of claim 8, the target holder or at least individual target holders of the target holder are designed so that the target surface of the target located in the ablation position is directed parallel or at a predetermined adjustable angle to the surface of the substrate in the coating position.

According to the embodiment of claim 9, a target holder or a plurality of preferably rotationally symmetrical and prismatic arranged target holder for receiving and for cooling or heating of cylindrical targets is a part of the target station. These targets consist either of a target material or are composed of several segments of different target materials. Furthermore, the target station has at least one device for rotating at least the target located in the ablation position at a predetermined angular velocity about its axis of symmetry.

According to the embodiment of claim 10, the at least one device for rotation is advantageously provided with in each case one device for the predetermined displacement of the target segments parallel to the axis of symmetry of the respective target into the ablation position.

The target holder is prism-shaped according to the embodiment of claim 11 and has prismenmantelflächeartig arranged target holders for receiving and cooling or heating of flat plate-shaped targets. The Targets, for example, have the shape of a rectangle. In addition, the target holder is rotatable in steps by predetermined angle corresponding to the number of target holders and, in order to realize a predetermined relative movement between the target located in the ablation position and the substrate located in the coating position, can be displaced laterally and preferably parallel relative to the substrate surface.

According to the embodiment of claim 12, the target holder is wedge-shaped. On at least one of the wedge surfaces, a target holder for a target is furthermore arranged as a flat plate. Furthermore, in order to realize a predetermined relative movement between the target located in the ablation position and the substrate located in the coating position, the target holder can be displaced laterally and preferably parallel relative to the substrate surface in a controlled manner. The target holder may further comprise means for cooling or heating the targets as flat plates.

Advantageously located on the wedge surfaces each have a target holder for a target as a flat plate. The wedge surfaces of the target holder enclose an angle in the range of preferably 40 to 60 degrees. The target holder with the two targets can continue to be rotated by 180 degrees, so that in each case one of the targets can be placed in the ablation position.

The target holder including the targets can be placed in a substrate, wherein the layer is deposited on the inner surface of the substrate. For this purpose, the substrate is rotated and moved in the symmetry axis of the substrate.

According to the embodiment of claim 13, the target holder is disc-shaped or frusto-conical.

The disc-shaped target holder has a target holder for receiving a frustoconical target. The truncated cone-shaped target holder has a target holder for receiving a truncated cone-shaped target.

Furthermore, the target holder is rotatable about its axis of symmetry and for realizing a predetermined relative movement between the target located in the ablation position and the substrate located in the coating position laterally and preferably displaceable in parallel controlled relative to the substrate surface. The target holder including the targets can be placed inside the substrate, wherein the layer is deposited on the inner surface of the substrate. For this purpose, the substrate is rotated and moved along its axis of symmetry.

According to the embodiment of claim 14, at least one protective screen is arranged in the coating chamber for at least one target not in ablation position and for at least one substrate not in coating position. As a result, they are protected against surface contamination with foreign material deposited.

According to the embodiment of claim 15, the device for coupling the target laser beam to the target located in the ablation position consists of a coupling-in window which is flanged to a coupling flange in a highly vacuum-tight manner and made transparent to the wavelength of the target laser beam. Of the

Einkoppelflanschquerschnitt and the coupling window are further sized in size so that the target laser beam over the entire surface of the target located in Ablationsposition either only linearly constant or predetermined varied speed with rotating disc-shaped or cylindrical targets or two-dimensional area with non-rotating target, for example, spiral can be scanned at a constant vector speed or in a circular and linear manner in order to achieve a uniform target removal over the entire target area, depending on the target shape and target movement. The axis of symmetry of the coupling flange is further inclined either at a given angle to the target surface or inclinable by means of Faltenbalgzwischenstück at several predetermined angles to the target surface, so that the target laser beam can be directed preferably at a certain angle or at different predetermined angles to the target surface. The target laser beam used must have a wavelength, pulse duration and fluence suitable for the effective target ablation process of the respective target material and for generating a high-energy target particle stream in the direction of the substrate, as well as fluence homogeneity or fluence distribution over the focus cross-section on the target surface. The wavelength-dependent material-specific absorption coefficient of the target material must be sufficiently large for the wavelength of the target laser beam, so that the photons are absorbed in the smallest possible volume and the ablauerten particles thereby sufficiently high enough energy to obtain high energies, for the formation of optimum layer properties, for example for the Generation of super-hard ta-C and c-BN layers are required. The pulse duration should be at least in the time range of a few 10 ns and lower, so that only a negligible proportion of the photon energy can flow out of the absorption volume by heat conduction.

According to the embodiment of claim 16 is to reduce the occupancy of the inner surface of the coupling window for the target laser beam with ablated target material, the length of Einkoppelflansches observing the required focal length of arranged outside the Beshichtungskammer lens for focusing the target laser beam on the target as long as possible because the number of target particles entering the window decreases with the square of the window target distance. As a result, an occupancy of the inner surface of the coupling-in window for the target laser beam with ablated target material, which leads to the reduction of the fluence of the target laser beam on the target, is reduced or avoided.

A further avoidance of the window allocation can be achieved if, by suitable choice of the length of the coupling flange, the fluence of the target laser beam focused on the target and thereby also scanned over a surface area of the coupling window on the occupied window inner surface is still large enough for the deposited surface Target material again from the window inner surface to slough off.

Furthermore, between the target located in the ablation position and the coupling window, a shutter which is movable synchronously with the target laser beam scan and perpendicular to the target laser beam and only exposes the laser beam cross-section can be provided.

In addition, magnetic field generating arrangements may be present for deflecting the abla- tated ionized Targetteilchenstromanteils of the window inner surface. This will reduce the occupancy of the inner surface of the coupling window achieved with target material. Advantageously, for example, rotationally symmetrical and funnel-shaped diverging magnetic fields whose field lines extend to the walls of Einkoppelflansches and not to the coupling window.

According to the embodiment of claim 17, the device for coupling the substrate laser beam with a predetermined cross section onto the layer surface of the substrate located in the relaxation position consists of a high-vacuum-tight flanged window of a material transparent to the wavelength of the substrate laser beam. This window can advantageously be arranged in the lid of the coating chamber which can be opened via a mechanism. This window is sized, shaped and arranged so that the substrate laser beam during relative movement between the laser beam and the surface of the relaxation position substrate, preferably by movement of the carrier and / or the substrate and / or by scanning the substrate laser beam is directed over the layer surface, either perpendicular or at a predetermined variable angle to the layer surface. The substrate laser beam used furthermore has a wavelength, pulse duration and fluence suitable for the voltage reduction of the respective layer material as well as fluence homogeneity or fluence distribution over the laser beam cross section on the layer surface. For effective voltage reduction, the photons of the substrate laser beam only have to be absorbed in the sublayer material to be relaxed. Consequently, the wavelength-dependent material-specific absorption coefficient of the layer material for the selected substrate laser wavelength must be sufficiently large so that the penetration depth of the photons lies only in the region of the deposited sub-layer thickness. To reduce the stress of ta-C layers, for example, a KrF excimer laser with 248 nm wavelength and for the voltage reduction of c-BN layers a F2 laser with 157 nm wavelength can be used. For the voltage reduction process, a homogeneous fluence distribution over the laser beam cross section on the layer surface without fluence spots is advantageous.

In and / or outside of the coating chamber 18 components of at least one of the in situ measuring means for determining the pulse energy, Fluenz and the fluence distribution of the target and the Substrate laser beam, for determining the Schichtabscheiderate and the layer thickness, arranged to determine the layer stress, for determining the substrate and layer surface temperature and for determining the target surface temperature or to assess the layer quality. The in situ measuring device is interconnected with the data processing system, so that a measured value-dependent control of the laser pulse deposition (PLD) of layers on substrates is given.

According to the embodiment of claim 19 are for in situ control of the pulse energy, the fluence and the fluence distribution of laser beams Laserleistungs- and Laserpulsenergiemessgeräte and laser beam profilers and for in situ control of Schichtabscheiderate, the layer thickness, the thickness of each deposited sublayer and the layer quality in situ Eilipsometer arranged.

According to the embodiment of claim 20, an optical interference measuring device is arranged such that the laser beam preferably of a diode laser with a suitable wavelength, which is only slightly absorbed by the layer material, directed at a predetermined, different from zero degrees angle of incidence on the growing layer and is reflected at both the growing film surface and at the film-substrate interface, the reflected beam portions interfering and the periodic resulting with increasing film thickness

Intensitätsschwankungen be registered by means of a arranged in the reflection direction of the laser beam photodetector and passed as a measurement signal to the data processing system.

The layer deposition rate and the layer thickness can be determined from the periodic almost cosinusoidal course of the measurement signal with decreasing amplitude. A periodic, almost cosinusoidal course of the measuring signal with continuously decreasing amplitude with continuous increase in thickness of the growing layer indicates a consistent layer quality.

For in situ measurement of the target, substrate and layer surface temperature, pyrometers are preferably arranged according to the embodiment of claim 21.

For in situ determination of the layer stress during the coating process and In order to control the reduction in stress during the stress reduction processes, according to the embodiment of claim 22, a cantilever attached only at one end is mounted on the carrier near a substrate, the radius of the bend increasing during the coating process with increasing thickness of the growing sublayer and during the stress reduction process Voltage reduction process of this sub-layer again decreasing radius of bending is determined and evaluated.

The radius of the bend can be determined, for example, by means of two diode laser beams reflected in each case from the attached and loose end of the cantilever and a position-sensitive beam detector (PSD).

In the coating chamber, at least one ion beam station for ion irradiation of the preferably located in or immediately adjacent to the coating position substrate and the surface of the respective growing or just deposited super thin layer with ion beams (substrate beams) of predetermined mass, charge, energy and Ion current density arranged. This serves to irradiate ion beams of both the preferably coating position substrates to remove absorbent layers immediately prior to coating and the surface of the respective growing or newly deposited layer to additionally supply energy and atomic particles for the film forming process.

According to the embodiment of claim 24, the ion beam station consists of an ion source flanged with high vacuum or built into the coating chamber and an electron source for charge compensation of the ion beam and energy, gas supply and cooling units arranged outside the coating chamber for the operation of the ion source and the electron source. The ion beam composition, the ion energy and the ion current density of the ion beam impinging on the substrates and optionally also on the growing or just deposited super thin layer is set or varied in a predetermined manner. Of the

Transition from the ion irradiation of the substrate surface for layer deposition and optional ion irradiation of the growing layer is carried out continuously without interruption of time and without interruption of the vacuum. The ion beam composition, the ion energy and the ion current density of the incident on the substrates and optionally also on the growing or just deposited super-thin layer ion beam are set or varied during the irradiation. By the ion irradiation of the substrates immediately before the coating absorption layers should be removed from residual gas constituents, which can lead to a reduction of the adhesive strength of the subsequently deposited. The ion irradiation of the growing or newly deposited layer additionally supplies energy for the layer formation process and / or, in the deposition of layers of compounds, stoichiometrically sets the stoichiometry by additionally feeding at least one component of the compound as ions.

Between the target located in the ablation position and the substrate located in the coating position, according to the embodiment of claim 25, magnetic fields are present whose magnetic field lines preferably extend perpendicularly from the surface of the target which has just been emptied to perpendicular to the surface of the substrate being coated Target and the substrate are arranged opposite each other with parallel or inclined to each other at a predetermined angle mid-perpendicular or inclined and offset from each other with a predetermined angle between the bisectors of at least 90 degrees.

These magnetic fields cause a concentration of the sideways tarred from the target ionized Teuchenstroms on the substrates and an increase in the degree of ionization in the ablauerten target particle and in addition a reduction to avoid the installation of tarred by the target particulates in the growing layer. The magnetic field lines in this case preferably run perpendicularly from the surface of the target currently being emptied to perpendicularly to the surface of the substrate to be coated, so that the leached ionized atomic target particles and the ablated electrons are guided on spiral paths along the magnetic field lines to the substrate and a spatial charge separation between the two ablated ionized target particles and about the same number of ablated electrons is avoided and thus no ion energy-reducing Coulomb interaction between the two types of charge carriers arises. The increase in the degree of ionization in the ablated target particle stream due to magnetic Field-enhanced electron impact ionization of preferably neutralized neutral target particles in the laser-induced plasma near the target surface is based on the following mode of action: Electrons with approximately the same energy and comparable energy distribution as the ionized and neutral atomic target particles are delayed near the target by Coulomb interaction with the ionized target particles and ionized Target particles thereby accelerated until both types of charge carriers move with comparable speed and velocity distribution in the direction of substrates. In the immediate vicinity of the target, however, there is still a high particle density and a high-density laser-induced plasma, in which the electrons still have a sufficiently high energy for the ionization of neutralized neutral target particles and their impact probability with these particles increases due to the spiral path movement along the magnetic field lines.

Respectively behind the target and the substrate 26 pole shoes are arranged according to the development of the patent. These are furthermore connected to at least one current coil via at least one magnetic yoke arranged in the coating chamber or introduced in a highly vacuum-tight manner through the walls of the coating chamber. Thus, the generation of the magnetic field for concentration of the ionized target particle flow component to the substrate in the coating position and to increase the degree of ionization in the ablauerten Targetteilchenstrom in opposite arrangement of the target located in the ablation position and the substrate by means of a magnetic circuit.

Immediately before the target as well as immediately in front of the substrate and between the target and the substrate 27 magnet coils or in the axial direction magnetized annular permanent magnets are arranged according to the embodiment of claim.

The magnetic field arrangements according to claims 26 and 27 can also be combined with each other, whereby the required current intensity in the magnetic coils can be reduced.

Magnet coils and / or ring-shaped permanent magnet magnetized in the axial direction are arranged according to the embodiment of claim 28 so that additional lent to the concentration of the ionized target particle stream fraction on the substrates to reduce to avoid incorporation of depleted particulates into the growing layer with staggered and inclined placement of the target and substrate at a predetermined angle between the bisectors of the just-baked target surface and the substrate surface to be coated at least 90 degrees, a preferably ring sector-shaped magnetic field between the target and the substrate is present.

According to the embodiment of claim 29 magnetic coils and / or magnetized in the axial direction of annular permanent magnets are arranged so that for additional reduction to avoid the incorporation of depleted particulates in the growing layer in opposite and inclined arrangement of the target and substrate, a magnetic field in the form of at least one Part of a sine wave-shaped torus between the target and the substrate is present.

The further developments according to claims 28 and 29 ensure that the substrate surface just to be coated is not visually geometrically-optically visible from the target surface that has just been cleared off, so that the neutral, uncharged target particle stream proportion and above all the neutral particulates with multiple atomic mass and also the ionized ones Particulates, because of their large Larmor radius, do not reach the substrates and only the leached ionized atomic target particles are used for the film formation process.

According to the embodiment of claim 30, at least one diaphragm with a predetermined opening geometry is arranged between the target and the substrate and is moved in such a way that the layer-forming particle flow, which is covered by the target, does not reach the respective substrate angle as vertically as possible, but not at an angle of incidence of greater than 60 degrees. or stratified layer surface is hit and layers are deposited with a homogeneous thickness or with a predetermined lateral Dickengradienten.

By an opening shape adapted to the substrate geometry and optionally predetermined movement of the diaphragm relative to the target and the substrate, target particle stream proportions which, without the diaphragm, graze at an angle of incidence of greater than 60 degrees would impinge on the substrate surface, hidden and not used for film formation. When the target particles strike the substrate surface, the energy and momentum input of the target particles into the growing layer surface is too low for the formation of particular layer properties, for example for producing a high sp ³ bond fraction in ta-C layers or the cubic boron nitride phase in c BN layers.

According to the embodiment of claim 31, the removal chamber is equipped with a surface structuring station for laser micro and / or laser nanostructuring of at least the deposited layers on the coated substrate in the structuring position by means of focus or mask projection methods.

The surface structuring station consists, according to the further development of patent claim 32, of at least one arranged outside the removal chamber

Lasers and devices for guiding, shaping and focusing as well as focus tracking or mask image plane tracking of the laser beam and for realizing a relative movement between the laser beam and the substrate surface and a device for coupling this laser beam as structuring laser beam with a predetermined focus or mask image cross-section on the layer surface and at least one in situ position measuring and adjusting device for the substrate in structuring position and devices for measuring and adjusting and tracking the focus position or the mask image plane of the structuring laser beam relative and perpendicular to the layer surface.

The removal chamber has according to the embodiment of claim 33 at least one station for reducing the voltage of the deposited layers by thermal annealing.

The station for stress reduction of the deposited layers by thermal annealing consists according to the embodiment of claim 34 from a radiant heater. With several substrates on a carrier, the substrates are advantageously simultaneously annealed. At the same time, the photon wavelength is reached a high degree of absorption in the layer material selected and the irradiation intensity adjusted to set the required, dependent on the layer material and substrate material maximum temperature targeted and maintained for a predetermined time.

According to the embodiment of claim 35, the feed treatment chamber, the coating chamber and the removal chamber for receiving a plurality of carriers and, correspondingly, the charging / pretreatment chamber for the use of a plurality of ion sources or a plurality of devices for generating a plasma, the coating chamber for the use of several Target stations, multiple voltage reduction stations and all power supply units and the control units for an automatic process flow characterized by a modular structure and thus expandable. Thus, the device for productive laser pulse deposition (PLD) of layers on substrates is modular and can thus be expanded cost-effectively with the required increase in productivity.

Embodiments of the invention are illustrated in principle in the drawings and will be described in more detail below.

Show it:

1 shows a device for laser pulse deposition (PLD) of ta-C layers on substrates,

2 shows a device for a magnetic circuit with pole shoes on a yoke in the coating chamber,

3 shows a measuring device for in situ control of the layer deposition rate and the thickness of the growing sub-layer and the layer quality,

4 and

5 shows carrier and target arrangements for coating cylindrical workpieces, for example drills and milling cutters, as substrates,

6 shows a carrier and a target arrangement for coating cutting plates as substrates,

7 shows a carrier for coating substrates in the form of cylinders, 8 shows a carrier for coating substrates in the form of needles and spheres, FIGS. 9 to 11 show carrier and target arrangements for inner coating of short hollow cylinders as substrates, FIGS

13 a target holder with rotatably arranged cylindrical targets, FIG. 14 a carrier arrangement and a target arrangement with axis-parallel arrangement of cylindrical targets and substrates, FIG.

15 shows a cross section of the coating chamber for a device for laser pulse deposition (PLD) of cubic boron nitride layers (c-BN layers)

Substrates, Fig. 16 shows a device for laser pulse deposition (PLD) of ta-C layers on the

Lateral surface of larger substrates in cylindrical form,

17 shows a device for laser pulse deposition (PLD) of ta-C layers on substrates with a flat rectangular shape,

FIG. 18 shows a target holder for targets with a rectangular plate shape, FIG.

19 shows a carrier in prismatic form,

Fig. 20 shows an arrangement for internal coating of hollow cylindrical bodies as

Substrates larger dimensions, Fig. 21 shows an arrangement for internal coating of long hollow cylindrical

FIG. 22 shows a disc-shaped target holder with a frusto-conical target attached thereto, FIG.

FIG. 23 shows a frustoconical target holder with a conical-truncated cone-shaped target attached thereto, FIG.

24 shows an arrangement for reducing the voltage of the sub-layer just deposited as an inner coating of long hollow-cylindrical bodies as substrates,

Fig. 25 shows an arrangement of an ion source for an ion beam with preferably rectangular band-shaped cross section within a hollow cylindrical

Substrate and

26 shows a carrier, substrate and target arrangement for coating lateral surfaces of substrates as long cylinders. 1st exemplary embodiment

A device for laser pulse deposition (PLD) of ta-C layers on substrates consists essentially of a laser 1 for generating the target laser beam, a laser 2 for generating the substrate laser beam, a loading station 3 for loading a carrier 8 with substrates 14, a feed / Pre-treatment chamber 4 for importing the carrier 8 in a coating chamber 5 and for cleaning the substrates 14 by an ion source 9, the coating chamber 5 for the alternate deposition of sub-layers and laser-induced voltage reduction of these sub-layers to the predetermined total layer thickness, a removal chamber 6 for removal of the carrier 8 from the Coating chamber 5 and a discharge station 7 for discharging the substrates 14 from the carrier 8.

1 shows a device for laser pulse deposition (PLD) of ta-C layers on substrates in a basic representation.

At least the charging processing chamber 4, the coating chamber 5 and the discharge chamber 6 are sequentially arranged. These chambers are interconnected by vacuum locks 10, which allow the transport of the carrier 8 from chamber to chamber in the open state and in the closed state, the separate venting and evacuation to high vacuum each chamber. For this purpose, each chamber is connected to a device for vacuum generation and ventilation. Such devices are known and not shown in the illustration of FIG. For transporting the carrier 8 from the loading station 3 into the loading / pretreatment chamber 4 and from the removal chamber 6 to the unloading station 7, these chambers 4, 6 have high-vacuum-tight closable doors. For installation or removal of devices in the chambers, to change the targets 15 and to carry out maintenance, the top surfaces of the chambers 4, 5, 6 or at least parts of the top surfaces are formed as high-vacuum-sealable lid or wall areas. The carriers 8 are coupled to a transport device, so that the transport from the loading station 3 through the chambers 4, 5, 6 to the unloading station 7 and positioning of each carrier 8 in the respective chamber 4, 5, 6 is ensured in the processing position. Thus, the device is an automatically operable Continuous installation, wherein in each case after an initial phase, a carrier 8 in the loading station 3, in each of the chambers 4, 5, 6 and in the unloading station 7 is located. The carriers 8 are disc-annular plates as a support for the substrates 14. The carrier 8 located in the chambers 4, 5, 6 in the processing position are set in rotation about their axis of symmetry at a predetermined angular velocity by means of existing driven rotary devices. In addition, the substrate holders positioned on the carrier 8 simultaneously rotate with the substrates 14 about their axis of symmetry at a predetermined angular velocity. The substrates 14 are, for example, slices. These rotations ensure a homogeneous ion beam cleaning process of the substrates 14 in the charging / pretreatment chamber 4, and an alternating homogeneous coating process of the substrates 14 and stress reduction process of the deposited sublayers in the coating chamber 5. After the carrier loaded in the loading station 3 with substrates 14 carrier 8 in the processing position in the feed / pre-treatment chamber 4, this is evacuated. Thereafter, the pretreatment of the substrates 14 takes place by ion beam action by means of the ion source 9. For this purpose, preferably noble gas ions, preferably argon ions, with ion energies in the range of 500 to 5000 eV and ion current densities on the substrate surface of 200 to 1000 uA / cm ² are used. The angular speeds for the rotation of the carrier 8 are in the range of 0.02 to 0.15 s ^-1 and for the self-rotation of the substrates 14 in the range of 0.2 to 1.5 s ^-1 . For a carrier 8, for example, with an outer diameter of 600 mm, which is loaded annularly with 100 substrates 14 with 30 mm diameter in two rows of annular, the time for the cleaning cycle is 10 to 30 min. After transporting the carrier 8 with the cleaned substrates 14 into the processing position of the coating chamber 5 without interruption of the vacuum, the alternating laser pulse deposition of sublayers of predetermined thickness takes place on the substrates 14 located in the coating position, which are located below the target located in the ablation position 15 are arranged at a distance of 30 mm to 70 mm, and the stress reduction of the deposited sublayers on the stress reducing position substrates 14. The coating position and the stress reduction position of the substrates 14 on the carrier 8 face each other. By the rotation of the carrier 8 at a predetermined angular velocity Thus, substrates 14 are simultaneously and continuously coated and voltage-reduced sub-layers which have just been deposited. As a result, a further voltage-reduced sub-layer is produced on each substrate 14 on the carrier 8 during one complete revolution of the carrier 8. The self-rotation of the substrates 14 about their axis of symmetry allows the deposition of layers with a homogeneous thickness and a homogeneous voltage reduction process over the entire substrate surface.

On the disk-shaped coolable target holder 11 six targets 15 are attached in the form of circular discs. For this purpose, the targets can advantageously be located in target holders of the target holder 11. In order to rotate the individual targets 15 into the ablation position, the target holder 11 is rotatably arranged and, according to the number of targets 15, can be rotated stepwise by 60 degrees. For the deposition of ta-C layers, five targets 15 made of pyrolytic graphite and a target 15 made of boron or tungsten carbide are attached to the target holder 11, wherein the diameters of the targets 15 are, for example, 50 mm. The target 15 made of boron or tungsten carbide is used for the PLD deposition of an adhesion-promoting intermediate layer on the substrates 14 whose total layer thickness, depending on the surface roughness of the substrates 14, is in the range from 30 nm to 250 nm. After the deposition of this adhesion-promoting intermediate layer, the PLD deposition of the ta-C layer takes place with a total layer thickness in the range from 500 nm to 5 μm, the sub-layer thicknesses being 50 nm to 150 nm. In order to avoid overheating of the targets 15 of graphite despite cooling during the continuous ablation process by the target laser beam 12 and to ensure the longest possible operation of trained as a continuous system device without renewal of these targets 15, these are rotated alternately in the ablation position. This can for example be done during the transport of the carrier 8. With a device 16 belonging to the target station for guidance, shaping, focusing and scanning, the target laser beam 12 is guided over the surface of the target 15 located in the ablation position. This device 16 is arranged outside the coating chamber 5 and consists for example of two deflecting mirrors 17a, 17b and an objective 18. The target laser beam 12 passes through a coupling window of the coating chamber 5 in the interior thereof. The target laser beam 12 having a wavelength of 248 nm emitted by a KrF excimer laser as the laser 1 is converted to the ablation position target 15 by successive reflection at the first x-directional deflecting mirror 17a and at the second y-directional deflecting mirror 17b directed and focused on the target surface with the aid of the z-directional movable lens 18. In this case, a predetermined angle of incidence of the target laser beam 12 is set to the target surface of less than 70 degrees. To improve the homogeneity of the laser beam, in one embodiment, a homogenizer may additionally be arranged in front of the first deflection mirror 17a. In order to achieve the most homogeneous possible fluence distribution over the cross section of the target laser beam 12, the laser 1 is operated as a KrF excimer laser, preferably with an unstable resonator. The coupling of the target laser beam 12 in the evacuated coating chamber 5 is effected by a high vacuum-tight at a Einkoppelflansch, which is preferably attached to the side wall of the coating chamber 5, flanged coupling window made of quartz glass. The length of the coupling flange and thus the distance between coupling window and target surface is chosen so that the fluence of the target laser beam 12 on the window inner surface is sufficient to ablated from the target 15 and deposited on the window inner surface material considering the focal length of the outside of the coating chamber 5 to be removed again by laser ablation. By a controlled movement of the deflecting mirrors 17a, 17b in the x and y directions, the focus of the target laser beam 12 is scanned spirally at a constant vector speed over the entire target surface of the target 15 as a disk in order to ensure homogeneous removal of the target 15 and as homogeneous as possible Surface density of the abgauerten particle flow toward the coating position in the substrate 14 to produce. With increasing

Removal of the target 15, a tracking of the focus of the target laser beam 12 by a controlled movement of the lens 18 in the z-direction is required. The opposing arrangement of the target 15 in ablation position and the substrates 14 in the coating position and by inserting a diaphragm with a circular opening between the target 15 and the substrates 14 ensures that the layer-forming particle flow ablated by the target 15 is not at an angle of incidence greater than 60 degrees impinges on the respective substrate or growing layer surface. The aperture does not protect itself at the same time Targets 15 located in ablation position prior to occupancy with foreign material.

The voltage reduction station for the laser-induced reduction of the voltages of the deposited sublayers consists of the laser 2 for generating the substrate laser beam 13, a beam shaping optics 19 arranged outside the coating chamber 5 and a coupling window of quartz glass flanged onto the cover of the coating chamber 5. The substrate laser beam 13 emitted by the laser 2 as a KrF excimer laser with a wavelength of 248 nm is formed with the aid of the beam shaping optical system 19 into a laser beam with rectangular laser beam cross-section, and thus reaches the layer surface of the lying in the relaxation position substrates 14. To a homogeneous fluence distribution without To achieve fluence spots over the laser beam cross section, the laser 2 is operated as a KrF excimer laser, preferably with a stable resonator.

In a further embodiment, at least one magnetic field can be used to concentrate the ionized particle stream sideways from the target 15 onto the substrates 14 located in the coating position and to increase the degree of ionization in the tailed target particle stream. The magnetic field lines of the magnetic field advantageously run perpendicularly from the surface of the target 15 which has been emptied, perpendicular to the surface of the substrates 14 to be coated.

2 shows a device for a magnetic circuit with pole pieces 20 on a yoke 21 in the coating chamber 5 in a schematic representation. The magnetic circuit consists of pole shoes 20 of predetermined geometry arranged above the target 15 in ablation position and under the substrates 14 located in the coating position, which are interconnected via a yoke 21 of a magnetic material, preferably soft iron, with at least one current coil 22 for generating the magnetic field are connected.

With magnetic flux densities in the range of 100 to 150 millitesla, for example, an increase in the deposition rate of up to 20% can be achieved at a target / substrate distance of 50 mm, since without a magnetic field only about 75% of that at an angle of 30 degrees to the target normal get from the target 15 ablauerten target particle stream on the substrates 14. The following are typical parameters for the deposition of ta-C layers on flat substrates with the device according to the schematic representation of FIG. 1 at a target - substrate distance of 50 mm, use of a magnetic field according to the schematic representation of FIG. 2 with a magnetic flux density of 140 milli-liters and angular velocities for the rotation of the can 8 in the range of 0.02 to 0.15 s ^-1 and for the self-rotation of the substrates 14 in the range of 0.2 to 1.5 s ^-1 : Use of two KrF lasers to generate the target 12 and the substrate laser beam 13 - target laser beam 12: laser pulse energy on the target 600 mJ, pulse repetition frequency 50 Hz, laser beam fluence on the target 12 to 15 J / cm ² , focus cross section on the target 4 to 5 mm ² ,

Substrate laser beam 13: laser pulse energy on the layer 600 mJ, pulse repetition frequency 50 Hz, laser beam fluence on the substrate 150 to 300 mJ / cm ² , focus cross section on the substrate 2 to 4 cm ² , film deposition rate with unmoved substrate up to 200 nm / min, thickness inhomogeneity with moving substrate less than 5%, coatable surface per hour with a 1 μm thick ta-C layer 730 cm ² or 72 slices with 30 mm diameter. b) Use of two KrF lasers for generating the target 12 and the substrate laser beam 13

Target laser beam 12: laser pulse energy on the target 600 mJ, pulse repetition frequency 300 Hz, laser beam fluence on the target 12 to 15 J / cm ² , focus cross section on the target 4 to 5 mm ² ,

Substrate laser beam 13: laser pulse energy on the layer 600 mJ, pulse repetition frequency 300 Hz, laser beam fluence on the substrate 150 to 300 mJ / cm ² , focus cross section on the substrate 2 to 4 cm ² , film deposition rate with unmoved substrate up to 1000 nm / min, thickness inhomogeneity with moving substrate less than 5%, coatable surface per hour with a 1 μm thick ta-C coating 4380 cm ² or 432 discs with 30 mm diameter.

For in situ control of the layer deposition rate, the thickness of the growing sub-layer and the layer quality, an optical interference measuring method can be used (illustration in FIG. 3a). The laser beam 24 of a diode laser 23 with 670 nm Wavelength for which the ta-C layer material has only a low absorption coefficient is directed at an angle of incidence of 60 degrees to an ablation position substrate 14 and reflected both at the growing layer surface 25 and at the layer substrate interface 26, wherein the reflected beam portions 27a, 27b interfere. The periodic intensity fluctuations arising with increasing layer thickness are registered by means of a photodetector 28 arranged in the reflection direction of the laser beam components 27a, 27b, evaluated as a measurement signal and used for control. The layer deposition rate and the layer thickness can be determined from the periodic course of the measurement signal that is periodic with decreasing amplitude. A periodic, almost cosinusoidal course of the measuring signal with continuously decreasing amplitude of the intensity I with continuous increase in thickness of the growing layer 25 over the time t (representation in FIG. 3b) indicates a constant sp ³ bond fraction.

After transporting the carrier 8 with the coated substrates 14 from the coating chamber 5 into the processing position of the removal chamber 6, in another embodiment, either without interrupting the vacuum, either a laser micro-structuring or a laser nanostructuring and / or a further voltage reduction the deposited layers are carried out by purely thermal annealing. If no further processing is to take place or after at least one of the listed processes, the removal chamber 6 is aerated and the carrier 8 with the coated substrates 14 is transported to the unloading station 7.

The laser nanostructuring of the ta-C layers for improving the tribological properties of the coated substrates 14 can take place, for example, by the production of ripples surface structures with the aid of femtosecond or picosecond laser pulses in the focus method. In this case, the patterning laser beam is focused onto the layer surface with the aid of an objective and a scanner mirror system, which are arranged outside the removal chamber 6, and guided in cell form or spirally over the substrates 14 which are in patterning position. The coupling of the structuring laser beam is effected by a flanged on the cover of the sampling chamber 6 coupling window made of quartz glass. In a focus Radius of 2 to 10 microns, a track pitch of 20 to 50 microns and a laser beam fluence of some 100 to 2000 J / cm ² Ripples are generated with a period of 500 to 700 nm and trench depths of some 10 to 400 nm.

The stress reduction of the deposited layers by purely thermal

Annealing can take place via a planar annular radiation heater with the dimensions of the carrier 8 for the simultaneous tempering of all substrates 14 on a carrier 8. The measurement of the layer temperature is advantageously carried out via a pyrometer. The annealing temperature is a maximum of the possible load temperature of the substrates 14. This is a maximum of 700 ° C. The annealing time is in the range of 10 to 30 minutes.

The lasers, the vacuum generating means, the ion beam or plasma generating means, the laser beam guiding, shaping, focusing and scanning means, the transport means for the at least one carrier 8 and all the drives for the movements of the carrier 8 and the target holder 11 and the in situ control device are interconnected with a controller in the form of a data processing system.

In a further embodiment of the embodiment, carriers 8 can be used as a disc ring with substrate holders for substrates 14 in the form of cylinders, prisms, cones, needles, balls or hollow cylinders and further embodiments of the target holder 11. For coating, for example, drills and milling cutters as substrates 14, these are rotatably driven in the carrier 8.

FIGS. 4 and 5 show carrier and target arrangements for coating cylinder-shaped workpieces as substrates 14, each in a schematic representation.

For a continuous layer deposition are in a first embodiment, substrate holder 29 and thus the substrates 14 disposed therein in the tangential direction of the rotating carrier 8 by a predetermined angle of preferably 45 degrees attached inclined (representations of Fig. 4a and 4b in two views). In addition, the substrate holder 29 are coupled to rotate these substrates 14 about their axis of symmetry with preferably integrated into the carrier 8 drives via a bevel gear 30 (shown in Fig. 4b). In a second embodiment (illustration in FIG. 5), the substrates 14 are arranged vertically standing in the carrier 8, wherein the substrates 14 with their substrate holders 29 about its axis of symmetry and further preferably each set five to seven substrate holder about a common center of symmetry in rotation become. The target 15, which is in the ablation position, is arranged inclined at a given angle of preferably 45 degrees to the axes of symmetry of the substrates 14. The targets 15 are sequentially brought to the ablation position by rotation of the target holder 11 through an angle of 360 degrees divided by the number of the targets 15 on the target holder 11. The arrangements according to FIGS. 4 and 5 ensure that the mutually inclined edges and surfaces of the substrates 14 can be uniformly coated with a hard material layer of the same quality.

FIG. 6 shows a carrier and a target arrangement for coating cutting plates as substrates 14 in a basic representation. The substrates 14 are located on substrate holders 29, wherein the cutting plates are arranged as substrates 14 on different length substrate holders 29 at different heights. The substrate holders 29 are arranged rotatably driven in the carrier 8 standing, wherein each five substrate holders rotate about a common center of symmetry. For a simultaneous layer deposition on the side surfaces and a top surface of the cutting plates, the targets 15 are preferably arranged at right angles to each other and there are simultaneously two targets 15 in the ablation position. In each case two targets 15 are successively brought by rotation of the target holder 11 by an angle of 360 degrees divided by the number of targets 15 on the target holder 11 in the ablation position. For a continuous layer deposition advantageously two target laser beams 12a, 12b are used. To reduce the voltage of the deposited sublayers, two substrate laser beams 13a, 13b are used. This is an alternating layer deposition and stress reduction on a top surface and the at least one adjoining side surfaces of the inserts possible.

FIG. 7 shows a carrier 8 for coating substrates 14 in the form of cylinders via a diaphragm 31 in a basic representation.

For coating substrates 14 in the form of cylinders, for example rollers for rolling bearings, they are preferably attached to substrate holder 29 in several rows next to each other in the tangential direction polygonal along the circumference of either continuously rotating or rotatable by predetermined angle carrier 8. With small cylinder lengths, these are made up into longer rods with spacer disks 33, which are connected to one another via flexible shafts 34. The cylinders are rotatably mounted with the substrate holders 29. The substrate holders 29 are coupled to rotate the cylinder about its axis of symmetry with preferably integrated into the carrier 8 drives. Between the target 15 and the cylinders located in Ablationsposition as substrates 14, a shutter 31 with the size of the cylinder adapted openings 32 is arranged, which prevents the grazing incidence of leached target particles on the cylinder jacket surfaces to be coated.

FIG. 8 shows a carrier 8 for coating substrates 14 in the form of needles and balls in a basic representation.

For coating substrates 14 as needles and balls, for example as rolling elements for bearings or of axes with a small diameter, the substrate holder 29 is designed as a vibrating plate with side walls. The carrier 8 itself is a disk ring, wherein a plurality of substrate holders 29 are located on the carrier 8. As a result of the vibrations, the substrates 14 arranged in the substrate holders 29 rotate as needles about their axis of symmetry and as balls about their center of mass both during the layer deposition and during the voltage reduction.

9 to 11 show carrier and target assemblies for inner coating of short Hohlzy alleviate as substrates 14 in basic representations. For internal coating of short hollow cylinders as substrates 14, for example, for the inner coating of the running surfaces of outer shells of rolling bearings, these are in a first embodiment mounted on its substrate holder 29 in the tangential direction of the carrier 8 by a predetermined angle of preferably 45 degrees inclined. Furthermore, the substrate holders 29 are coupled to rotate the substrates 14 about their axis of symmetry with preferably integrated into the carrier 8 drives. FIGS. 9a and 9b show such an arrangement in basic representations in two views.

In a second embodiment, the substrates 14 with their substrate holders 29 are arranged vertically on the carrier 8 and are set in rotation with their substrate holders 29 about their axis of symmetry. The target 15 located in the ablation position is inclined to the symmetry axes of the substrates 14 by a predetermined angle of preferably 45 degrees (shown in FIG. 10). In a third embodiment, the substrate holders 29 are arranged with the substrates 14 radially on the peripheral surface of the carrier 8 with their axes of symmetry perpendicular to the axis of symmetry of the carrier 8 and rotate about its axis of symmetry (shown in Fig. 11).

The carrier 8 is rotated in the second and third embodiments after the deposition of a sublayer each by an angle of 360 degrees divided by the number of positioned on the carrier 8 substrates 14 to the next substrate 14 in the coating position and on the carrier to move the oppositely disposed substrate 14 in the voltage reduction position.

In the embodiments according to FIGS. 9 to 11, the substrate laser beam 13 for the voltage reduction with a rectangular cross section is directed at the smallest possible angle of incidence to the coated surface of the substrate 14 located in the voltage reduction position (not shown here). To increase the Schichtabscheiderate in each case a magnetic circuit with pole pieces 20 is arranged on a yoke 21 in the second and third embodiments (representations in Figs. 10 and 11). The magnetic circuit consists of pole shoes 20 of predetermined geometry arranged above the target 15 in ablation position and under the substrates 14 located in the coating position, which are interconnected via a yoke 21 of a magnetic material, preferably soft iron, with at least one current coil 22 for generating the magnetic field are connected. In these embodiments, as shown in Figs. 9 to 11, the substrate laser beam 13 for reducing the voltage of a rectangular cross section becomes under As small as possible angle of incidence on the coated surface of the located in the voltage reduction position substrate 14 is directed.

In further embodiments of the first embodiment, targets 15 in cylindrical form can also be used. These are rotatably mounted on the target holder 11 and the target 15 located in Ablationsposition is offset by means of an integrated drive in the target holder 11 in rotation at a predetermined angular velocity. By linear scanning of the focused on the target surface target laser beam 12 parallel to the axis of symmetry of the target 15 and the simultaneous Tarwidotation a uniform target removal by laser ablation. The

The symmetry axis of the targets 15 in cylindrical form is preferably directed parallel to the substrate surface to be coated.

On a target holder 11 as a disk, the targets 15 can be arranged as a cylinder radially symmetrical or polygonal in the tangential direction (representations in Figs. 12 and 13).

In a further embodiment of the first exemplary embodiment, the targets 15 are arranged in cylindrical form with their axes of symmetry parallel to the axis of symmetry of the rotatable target holder 11 on the target holder 11 as a disk. FIG. 14 shows the arrangement of the carrier 8 and the targets 15 and substrates 14 in a basic representation. By means of this embodiment of the device, for example, substrates 14 which are assembled into rods can be coated in cylindrical form, which are arranged radially symmetrically on the periphery of the disk-shaped carrier 8. The magnetic circuit is used for magnetic field-assisted concentration of the ionized target particle flow component on the substrates 14 in the coating position. The magnetic circuit consists of pole shoes 20 of predetermined geometry arranged above the target 15 in ablation position and under the substrates 14 located in the coating position a yoke 21 made of a magnetic material, preferably soft iron, each having at least one current coil 22 are connected to each other for generating the magnetic field. 2nd exemplary embodiment

A device for productive laser pulse deposition (PLD) of cubic boron nitride layers (c-BN layers) on substrates 14 corresponds to the execution of the coating chamber 5 of the first embodiment.

FIG. 15 shows a cross section of the coating chamber for a device for laser pulse deposition (PLD) of cubic boron nitride layers (c-BN layers) on substrates in a basic representation.

The coupling of the target laser beam 12 with a wavelength of 248 nm in the coating chamber 5 is carried out by a high vacuum on an extended Einkoppelflansch 35, which is attached, for example, the lid of the coating chamber 5, flanged coupling window 36 made of quartz glass. The Einkoppelflansch 35 of non-magnetic material is surrounded by at least one magnetic coil assembly 37. The field lines of the rotationally symmetrical magnetic fields generated by this magnet coil arrangement 37 preferably extend to the inner walls of the coupling flange 35 and not to the coupling window 36, so that the ionized target particle stream portion slopped in the direction of the coupling window 36 almost does not reach the coupling window 36 and thus reduces its coverage with target material is avoided.

For depositing c-BN layers, five targets 15 of pyrolytic hexagonal boron nitride and a target 15 of boron or tungsten carbide are mounted on the target holder 11. The target 15 made of boron or tungsten carbide serves for the PLD deposition of an adhesion-promoting intermediate layer on the substrates 14 whose total layer thickness, depending on the surface roughness of the substrates 14, is in the range from 30 nm to 250 nm.

In order to increase the adhesion of the intermediate layers on the substrate 14 and the c-BN layers on the intermediate layers as well as for nucleation and formation of the c-BN layer phase, the surfaces of the substrates 14 in the coating position become coated with argon ion beams before and after PLD deposition of the intermediate layer, the surface of the respective growing boron nitride sub-layer is irradiated with argon / nitrogen ion beams as substrate beams in a mixing ratio of preferably 1: 1 to 2: 1. The arranged to generate the ion beams 39 in the coating chamber 5 ion beam station 38 consists of a lid of the coating chamber 5 hochvakuumdicht angeflanschten ion source as substrate source and an electron source for charge compensation of the ion beam 39 as substrate beam and outside the coating chamber 5 arranged energy, gas supply and cooling units for the operation of the ion beam station 38. The Ar / N ₂ ion irradiation of the growing BN layer additionally supplies energy for the c-BN nucleation and the c-BN layer formation process and sets the c-BN stoichiometry in a targeted manner , For magnetic field assisted concentration of the ionized target particle stream fraction to the substrates 14 located in the coating position on the carrier 8 and reduction to avoid the incorporation of hexagonal particulate deposited by the BN target into the growing layer by utilizing only the leached ionized atomic particle stream for film formation in ablation position target 15 and located in the coating position substrates 14 offset from each other and arranged inclined to each other. The predetermined angle between the mid-perpendiculars is at least 90 degrees. Between the target 15 and the substrates 14, an annular sector-shaped magnetic field is generated whose field lines extend perpendicularly from the target surface to perpendicular to the substrate surface. The magnetic fields are generated by means of hollow-cylindrical magnet coils 40 arranged directly in front of the target 15 and immediately in front of the substrates 14 and thorax-sector-shaped magnet coils 41 arranged arcuately between the target 15 and substrates 14 and additionally by means of a magnetic circuit whose pole shoes 20 are connected to the yoke 21 Current coil 22 behind the target 15 and behind the substrates 14 are arranged. By these arrangements of the target 15 and the substrate 14 to one another, through the coil arrangement and the choice of the coil inside diameter ensures that the ablauerte target surface of the substrate surface to be coated from geometrically-optically not visible, so especially the particulate matter with multiple atomic mass not on the Substrate 14 arrive. In order to avoid wall reflections of particulates which have sloughed off the target 15 in the direction

Substrate 14 are successively attached to the serving as the inner bobbin of the magnetic coils 41 tubes annular ribs.

For the production of the substrate laser beam 13 for the laser-induced reduction of Stresses of the deposited c-BN sublayers employ a fluorine laser with a wavelength of 157 nm. The transparent for this wavelength coupling window 42 for the substrate laser beam 13 consists of calcium fluoride (CaF ₂ ).

The following are typical parameters for the deposition of c-BN layers on flat substrates with the device of FIG. 1 and FIG. 4 of a middle target

Substrate distance of 200 mm when using a magnetic field according to FIG. 2 with a magnetic flux density of 250 millitesla:

Use of a KrF laser to generate the target laser beam - laser pulse energy on the target 600 mJ,

Laser beam fluence on the target 20 to 40 J / cm ² ,

Focus cross section on the target 1.5 to 3 mm ² ,

- pulse repetition frequency for c-BN nucleation 10 to 30 Hz,

- Pulse repetition frequency for further c-BN layer growth 50 Hz. Use of a high-frequency ion source to generate the substrate beam

Working gas mixture ArZN ₂ in the ratio 2: 1,

- ion energy 700 eV,

- Ion current density for c-BN nucleation and for further c-BN growth 570 μA / cm ² . Use of a fluorine laser for generating the substrate laser beam

Laser pulse energy on the layer 8.5 to 15 mJ,

- pulse repetition frequency 200 Hz,

Laser beam fluence on the substrate 75 to 130 mJ / cm ² ,

- Focus cross-section on the substrate 12 mm ² , Schichtabscheiderate with unmoved substrate 45 nm / min, thickness inhomogeneity with moving substrate less than 5%, Subschichtdicke 50 to 150 nm, coatable surface per hour with a 1 micron thick c-BN layer about 100 cm ² ,

3rd embodiment

FIG. 16 shows a device for laser pulse deposition (PLD) of ta-C layers on the lateral surface of larger substrates in cylindrical form, for example of cylindrical bodies with lengths of up to several 10 cm and diameters of a few cm to a few 10 cm in a schematic representation. The device essentially corresponds to that of the first exemplary embodiment. The carrier 8 for receiving and transporting preferably two substrates 14 in cylindrical form or of two cylinders composed of roller rings as substrates 14 is a frame in which the substrates 14 are rotatably mounted and by means of a preferably integrated in the carrier 8 drive in rotation at a predetermined angular velocity be offset about its axis of symmetry. The pretreatment of the substrate 14 by ion beam action in the feed / pretreatment chamber 4 is effected by means of an ion source 9 which either supplies a band-shaped ion beam over the entire length of a substrate 14 or by means of a built-in ion source having a circular ion beam cross-section parallel to it by means of a displacement device Symmetryeachse of the rotating substrate 14 is scanned. In the coating chamber 5, a first station 43 for voltage reduction, a target station 44 and a second station 45 for voltage reduction are successively arranged in the transport direction of the carrier 8. This ensures that a sub-layer is simultaneously deposited on one substrate 14 and the voltage of the previously deposited sub-layer on the other substrate 14 is reduced. On the target holder 11, at least three targets 15 are rotatable in cylindrical form and mounted parallel to the substrate 14 located in the coating position. The target 15 located in the ablation position is set in rotation at a predetermined angular velocity by means of a drive, which is preferably integrated in the target holder 11. Linear scanning of the target laser beam 12 focused on the target surface parallel to the axis of symmetry of the target 15 in ablation position and simultaneous target rotation results in uniform target removal by laser ablation and thus homogeneous coating of the opposing rotating substrate 14. Between the target 15 and in FIG Ablation position located substrate 14, a diaphragm with a size of the substrate 14 adapted opening is attached, which prevents the grazing incidence of ablated target particles on the surface to be coated of the substrate 14 to be coated. In the illustration of FIG. 16, this diaphragm is not shown.

By rotation of the target holder 11 at an angle of 360 degrees divided by the Number of the arranged targets 15, the respective target 15 is positioned in the ablation position. In the present embodiment, two targets 15 made of pyrolytic graphite and a target 15 made of boron or tungsten carbide are attached to the target holder 11. The target 15 made of boron or tungsten carbide is used for the PLD deposition of an adhesion-promoting intermediate layer on the substrates 14.

To reduce the voltage of the just deposited sublayer, the substrate 14 located in the coating position is brought to voltage reduction by moving the carrier 8 into the first or second station 43, 45. By linear scanning of the directed onto the substrate surface substrate laser beam 13 with preferably rectangular cross-section parallel to the axis of symmetry of the substrate 14 and the simultaneous substrate rotation is a uniform reduction in voltage of the deposited sub-layer.

In one embodiment of the third exemplary embodiment, a laser micro or laser nano structuring and / or a further one may be present in the withdrawal chamber 6

Voltage reduction of the deposited layers by purely thermal annealing.

4th embodiment

FIG. 17 shows a device for laser pulse deposition (PLD) of ta-C layers on substrates with a flat rectangular shape in a basic representation. The device essentially corresponds to that of the first embodiment. In addition, the ion source 9, the first voltage reduction station 43, the target station 44 including the target holder 11, and the second voltage reduction station 45 of the third embodiment are realized. On the carrier 8 preferably two substrate holders 29 are each positioned as a plate. In order to ensure homogeneous pretreatment of the substrates 14, the substrate holders 29 are moved in the feed / pretreatment chamber 4 by controlled displacement of the carrier 8 perpendicular to the ion beam of the ion source 9 as a broadband ion source or perpendicular to the scanning direction of the ion source 9 with a circular ion beam cross section. In order to ensure a homogeneous layer deposition and a homogeneous stress reduction, in the coating chamber 5 an additional controlled movement of the carrier 8 with the substrates 14 perpendicular to the scanning direction of the target laser beam 12 and the substrate laser beam 13. Between the target 15 and the ablation position in the substrate 14, a diaphragm is fitted with a matching opening, the grazing incidence of ablauerten target particles on the substrate to be coated 14 prevented. The aperture is not shown in the illustration of FIG. 17.

In the embodiments 1 to 4 and targets 15 can be used as a rectangular plate. For this purpose, the target holder 11 is prism-shaped and the targets 15 are mounted on the lateral surfaces.

FIG. 18 shows a target holder 11 for targets 15 with a rectangular plate shape in a basic representation.

To rotate the respective target 15 into the ablation position by means of an existing drive, the target holder 11 is designed to be rotatable about its axis of symmetry in steps of 360 degrees divided by the number of prism lateral surfaces occupied by targets 15. In order to allow a uniform target removal over the entire target surface, the target laser beam 12 is scanned two-dimensionally areally, for example, circular and linear progressively as meanders or adjacent bands, over the target surface.

In a further embodiment of the embodiments 3 and 4, the

Substrates 14 are on a carrier 8 in prismatic form.

FIG. 19 shows such a carrier 8 in prismatic form with substrates 14 in a basic representation.

To rotate the substrate 14, for example, fixed to substrate holder 29 in the pretreatment position and in the coating and Spannungsreduzierungs- position of the carrier 8 by means of a drive about its preferably parallel to the target surface symmetry axis gradually by angles of 360 degrees divided by the number of substrates 14 occupied prism shell surfaces rotatable. The carrier 8 is further perpendicular to the scanning direction of the ion beam in the feed / pretreatment chamber 4 and the target laser beam 12 and the substrate laser beam 13 in the coating chamber 5 by means of a transport Directed controlled direction to ensure a homogeneous pretreatment of the substrates 14 and a homogeneous layer deposition and a homogeneous voltage reduction. Between the target 15 and the substrates 14 located in the ablation position, an aperture with a suitable opening can furthermore be attached, which prevents the grazing incidence of leached target particles on the substrates 14 to be coated.

In a further embodiment of the device, the target 15 can also be arranged in cylindrical form, in the form of a plate or in the form of a truncated cone in the interior of the substrate 14. The substrate 14 is, for example, a hollow cylinder whose inner surface is to be provided with a layer to be deposited.

20 shows an arrangement for the inner coating of hollow cylindrical bodies as substrates 14 of larger dimensions in a schematic representation. The targets 15 in cylindrical form are rotatably mounted on the target holder 11. The target 15 to be ablated is displaced axially and parallel to the axis of symmetry of the substrate 14 into the ablation position by means of a drive integrated in the target holder 11 and displaced in rotations at a predetermined angular velocity. By linear scanning of the focused on the target surface target laser beam 12 parallel to the axis of symmetry of the target 15 and the simultaneous Tarwidotation a uniform target removal by laser ablation. By simultaneous rotation of the mounted on the rotatable substrate holder 29 substrate 14 about its axis of symmetry at a predetermined angular velocity and controlled axial relative movement between the target 15 and substrate 14 layers are deposited with a homogeneous thickness or with a predetermined thickness gradient in the axial direction. The substrate laser beam 13 for reducing the voltage of the sub-layer just deposited may be simultaneously directed to the coated inner surface of the substrate 14 opposite the substrate surface located in the coating position. The hollow cylindrical substrates 14 mounted on the rotatable substrate holder 29 can be positioned on a disc-shaped carrier according to Embodiment 1 or a carrier configured as a frame according to Embodiments 3 and 4, for example. 21 to 24 show a further arrangement for the inner coating of long hollow cylindrical bodies as substrates 14 with larger dimensions in a schematic representation.

In Fig. 21, two targets 15 are fixed in a plate shape on a wedge-shaped target holder 11 having a wedge opening angle α in the range of preferably 40 to 60 degrees. A meander-shaped or spiral-shaped scan of the target laser beam 12 focused on the target surface over the target surface results in a uniform target removal by laser ablation. By simultaneous rotation of the hollow cylindrical substrate 14 fastened on the rotatable substrate holder 29 about its axis of symmetry at a given angular velocity and controlled relative axial movement between the target 15 and the substrate 14, layers with a homogeneous thickness or with a predetermined thickness gradient are deposited in the axial direction. By rotating the target holder 11 through an angle of 180 degrees about its axis of symmetry, each of the two targets can be brought into the ablation position. The hollow-cylindrical aperture 31, which surrounds the target holder 11 with the targets 15, is moved synchronously with the laser beam scan over the target, so that only particles ablated from the target and passing through the aperture and almost perpendicular to the surface of the substrate 14 are hit effect the layer formation. Instead of the wedge-shaped target holder 11 with two plate-shaped targets, the disc-shaped target holder 11 shown in FIG. 22 may alternatively be used with a frustoconical target 15 attached thereto or the frusto-conical target holder shown in FIG. 23 with a frustoconical target 15 attached thereto become. Linear scanning of the target laser beam 12 focused on the target surface parallel and perpendicular to the axis of symmetry of the target 15 and the simultaneous target rotation then results in uniform target removal by laser ablation.

As shown in FIG. 24, the substrate laser beam 13 for reducing the voltage of the newly deposited sublayer is preferably directed perpendicular to the sublayer of the coated inner surface of the hollow cylindrical substrate 14 by means of a 90 degree deflection mirror 47 attached to the mirror support 48. By controlled axial displacement of the mirror holder 48 with the deflecting mirror 47 and simultaneous rotation of the attached on the rotatable substrate holder 29 hollow cylinder shaped substrate 14 about its axis of symmetry at a predetermined angular velocity at predetermined laser beam parameters, a predetermined voltage reduction over the entire surface of the deposited sub-layer is achieved.

A plurality of rotatable substrate holders 29 with the hollow cylindrical substrates 14 can be positioned, for example, in a carrier 8 designed as a frame according to exemplary embodiment 3, which has at least one drive unit for rotating the substrate holder 29 with the substrate 14 around its axis of symmetry (also shown in FIG. 16). , At least one target holder 11 with a target 15 is attached to a moving device for linear scanning and rotation of the target holder 11 with the target 15, which is preferably attached to the front vertical wall of the coating chamber 5 so that one of the in the coating chamber 5 in the carrier. 8 positioned, located in coating position substrates 14 can be coated (as shown in FIG. 21).

At least one mirror mount 48 with the deflecting mirror 47 is attached to a moving device for linear scanning of the mirror mount 48 with the deflecting mirror 47, which is preferably attached to the front vertical wall of the coating chamber 5 such that the tension of the previously deposited sublayer is one of those in the coating chamber 5 can be reduced in the carrier 8 positioned, not in the coating position but in voltage reduction position located substrate 14 (as shown in FIG. 24). Both the target laser beam 12 and the substrate laser beam 13 are coupled into the coating chamber 5 by coupling windows flanged high vacuum-tight in the coating chamber 5 opposite the movement device fastenings for the target holder 11 and the mirror holder 48, and onto the target 15 (corresponding to the representation of FIG 21) or directed to the deflection mirror 47 (as shown in Fig. 24). The focusing and moving devices for the target laser beam 12 and the substrate laser beam 13 are mounted outside the coating chamber 5.

The pretreatment of the substrate 14 by ion beam exposure can be carried out according to Embodiment 3 in the charging / pretreatment chamber 4 (corresponding to FIG the illustration of FIG. 16).

FIG. 25 shows an arrangement of an ion source 9, which supplies an ion beam with a preferably rectangular band-shaped cross section, to an ion source holder 32 within a hollow cylindrical substrate 14. The supply lines for the power, voltage and gas supply and the cooling of the ion source 9 via the ion source holder 32. This is attached to a moving device and flanged to a vertical wall of the feed / pre-treatment chamber. By controlled axial displacement of the ion source holder 32 with the ion source 9 and simultaneous rotation of the hollow cylindrical substrate 14 mounted on the rotatable substrate holder 29 about its axis of symmetry at a predetermined angular velocity uniform pre-treatment over the entire surface to be coated of the substrate 14 is achieved at given ion beam parameters. The hollow cylindrical aperture 31, which surrounds the ion source 9 and has a gap-shaped opening for the ion beam, is fixed to the ion source 9, thus moved in synchronism with the ion source 9 and prevents the particles sputtered during the pretreatment from reverting to the ion source 9 get to be coated substrate surface.

In a further embodiment of the device, the target 15 as a hollow cylinder can also surround the substrate 14. By arranging a plurality of targets 15 at a predetermined distance and using a plurality of target 12 and substrate laser beams 13, advantageously long substrates 14 can thus be coated. FIG. 26 shows a carrier, substrate and target arrangement for coating lateral surfaces of substrates 14 as long cylinders in a basic representation. The substrate 14 is rotatably and axially displaceably mounted. The targets 15 as hollow cylinders are arranged one after another at a predetermined distance with their axes of symmetry parallel to one another and parallel to the axis of symmetry of the substrate 14 and preferably surround the substrate 14 radially symmetrically. Each target 15 is rotated by means of a drive integrated in the suspension 46 of the target holder 11 in rotations at a predetermined angular velocity. By linear scanning of the focused on the target surface target laser beam 12 parallel to the axis of symmetry of the target 15 and the simultaneous tarot rotation, a uniform ablation of the target inner surface by laser ablation takes place. By simultaneous rotation of the substrate 14 about its axis of symmetry at a predetermined angular velocity and controlled axial back and forth displacement of the substrate 14 relative to the targets 15 layers are deposited with a homogeneous thickness or with a predetermined Dickengradient in the axial direction. The substrate laser beams 13 for voltage reduction are directed before, between and after the target holders 11 on the surface of the substrate 14, so that during the controlled axial back and forth displacement of the substrate 14 in sections, an alternating deposition of sub-layers and subsequent voltage reduction takes place.

The devices of the exemplary embodiments can also be used for productive laser pulse deposition (PLD) of cubic boron nitride layers (c-BN layers) on substrates, if targets of hexagonal boron nitride are used instead of the targets of graphite and simultaneously a substrate beam during the Schichtabscheideprozesses, containing at least a proportion of nitrogen ions, is directed to the growing layer surface.

Claims

claims

A device for laser pulse deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride layers (c-BN layers), on substrates with means for generating vacuum, with at least one Device for ion beam or plasma generation, comprising lasers with devices for guiding, shaping, focusing and scanning laser beams and with at least one transport device for at least one carrier, characterized in that in each case at least one feed / pretreatment chamber (4), a coating chamber ( 5) and a removal chamber (6) arranged in succession, each separately via a device for vacuum generation evacuated and separately ventilated and separated by vacuum locks (10), so that in each case at least one carrier (8) with at least one substrate holder (29) for receiving from at least one substrate (14) is movable from chamber to chamber by means of the transport device with the vacuum lock (10) open, that in the feed treatment chamber (4) either at least one ion source (9) for ion beam pretreatment of the substrate (14) or at least one device for generating a plasma for plasma pretreatment of the substrate (14) is arranged, that at least one target station (44) consisting of at least one target holder (11) with at least one target (15) at a predetermined distance to the on the carrier (8) in the coating position substrate (14) in the coating chamber (5) and at least one laser (1) with devices for guiding, shaping, focusing and scanning the laser beam as a target laser beam (12) outside the coating chamber (5) and means for coupling the target laser beam (12) in the coating chamber (5) is arranged so that the target laser beam (12) in the Ablati Onsposition located target (15) passes, wherein the target laser beam (12) is directed at a predetermined angle of incidence of less than 70 degrees to the target surface and located in Ablationsposition target (15) and on the carrier (8) in the coating position located substrate (14) are arranged to each other so and are moved relative to each other such that the layer-forming particle stream, which has sloughed off from the target (15), impinges on the respective substrate or growing layer surface perpendicularly or substantially perpendicularly, but not at an angle of incidence of greater than 60 degrees, and with homogeneous and predetermined thicknesses or sublayers with a predetermined lateral thickness gradient, in that at least one stress reduction station for laser-induced reduction of the stresses of deposited sublayers of predetermined thickness on the substrate (14) located in the stress reduction position on the carrier (8) in the coating chamber (5) consists of at least one laser ( 2) with devices for guiding, shaping, focusing and scanning the laser beam as a substrate laser beam (13) outside the coating chamber (5) and a device for coupling the substrate laser beam (13) in the coating chamber (5) is arranged in that the substrate laser beam (13) with a predetermined cross section is directed onto the surface of the coated substrate (14), the substrate (14) located in the voltage reduction position on the carrier (8) being arranged and the substrate (14) and the substrate laser beam ( 13) are moved relative to one another such that the internal stresses of sublayers of predetermined thickness over the entire sublayer area and the entire sublayer thickness are reduced laterally or homogeneously over the sublayer area and over the sublayer thickness such that the deposition of sublayers and the stress reduction of Sublayers alternately until reaching the predetermined total layer thickness, and that the components of the device are coupled to a data processing system, so that the transport of the carrier (8) and a predetermined variation of all parameters for the pretreatment, for the coating and the Spannungsr Eduction process controlled.

2. Device according to claim 1, characterized in that the carrier (8) as a carrier of the at least one substrate holder (29) and the at least one substrate (14) has the shape of a disc, a disc ring, a plate, a frame or a prism and that the carrier (8) at least in the coating chamber (5) for Realization of a predetermined lateral relative movement of the substrate (14) is preferably coupled to at least one drive parallel to the surface of the located in ablation position target (15).

3. Device according to claim 1 or 2, characterized in that the carrier (8) is formed as a disc or disc ring and coupled to realize either a continuous rotation at a predetermined angular velocity or stepwise rotation by a predetermined angle about its axis of symmetry with at least one further drive.

4. Device according to claim 1 or 2, characterized in that the carrier (8) is arranged as a prism and coupled to a drive so that this about its preferably parallel to the target surface symmetry axis gradually by predetermined angle corresponding to the number of substrates (14) occupied prism shell surfaces is rotatable.

5. The device according to claim 2, characterized in that in the carrier (8) at least one moving device for the substrate holder (29) is integrated so that the substrate (14) rotates about its axis of symmetry or about its center of symmetry with a predetermined angular velocity and / or is tilted cyclically over a predetermined angular range to the target surface.

6. The device according to claim 1, characterized in that the target holder (11) is disc-shaped or disc-ring-shaped and a plurality of circularly arranged target holders for receiving and cooling or heating of preferably disc-shaped targets (15) or of radial or tangential on the target holder (11 ) arranged targets (15) in cylindrical form of a target material or different target materials and a device for stepwise rotation of the target holder (11) about its axis of symmetry by predetermined angle has according to the number of targets (15).

7. Device according to claim 6, characterized in that the target holder (11) has at least one device for rotating the target located in ablation position (15) about its axis of symmetry with predetermined angular velocity.

8. The device according to claim 1, characterized in that the target holder (11) or at least individual target holders of the target holder (11) are formed so that the target surface of the target located in Ablationsposition (15) parallel or at a predetermined adjustable angle to the surface of the coating position substrate (14).

9. Device according to claim 1, characterized in that a target holder (11) or a plurality of target holders (11), preferably rotationally symmetrical and prismatic arranged target holder, for receiving and for cooling or heating of a target material targets (15) in cylindrical form or of Targets (15) in a composite of several segments of different target materials cylinder shape and at least one device for rotation of at least the target located in ablation position (15) with predetermined angular velocity about its axis of symmetry components of the target station.

10. The device according to claim 9, characterized in that the device is provided for rotation with in each case a device for predetermined displacement of the target segments parallel to the axis of symmetry of the respective target (15) in the ablation position.

11. The device according to claim 1, characterized in that the target holder (11) is prism-shaped, that the target holder (11) has prism envelope surface arranged target holders for receiving and cooling or heating of targets (15) as flat plates and that the target holder ( 11) is rotatable in steps by predetermined angles corresponding to the number of target holders and is displaceable in a controlled manner laterally and preferably parallel relative to the substrate surface in order to realize a predetermined relative movement between the target (15) located in the ablation position and the substrate (14) located in the coating position.

12. The device according to claim 1, characterized in that the target holder (11) is wedge-shaped, that a target holder for a target (15) is arranged as a flat plate on at least one of the wedge surfaces, and that the target holder (11) for realizing a predetermined relative movement between the located in ablation position target (15) and located in the coating position substrate (14) laterally and preferably parallel relative to the substrate surface is displaced controlled.

13. The device according to claim 1, characterized in that the target holder (11) is disk-shaped or frusto-conical and that the disc-shaped target holder (11) has a target holder for receiving a frusto-conical target (15) or that the frusto-conical target holder has a target holder for Receiving a frustoconical target 15 and that the target holder (11) rotatable about its axis of symmetry and for realizing a predetermined relative movement between the located in Ablationsposition target (15) and in the coating position located substrate (14) laterally and preferably parallel relative to the Substrate surface is controlled displaced.

14. Device according to claim 1, characterized in that at least one protective screen is arranged in the coating chamber (5) for at least one target (15) not in ablation position and at least one substrate (14) not in coating position.

15. The device according to claim 1, characterized in that the means for coupling the target laser beam (12) to the located in Ablationsposition target (15) from a coupling flange (35) high vacuum-tight flanged coupling window (36) from a for the wavelength of Targetlaserstrahls (12) transparent material, wherein the Einkoppelflanschquerschnitt and the coupling window (36) are sized so that the target laser beam (12) over the entire surface of the ablation position target (15) either only linearly at constant speed or given varied speed or two-dimensionally scanned surface and that the axis of symmetry of Einkoppelflansches (35) is inclined at a predetermined angle to the target surface or tiltable by Faltenbalgzwischenstück at several predetermined angles to the target surface.

16. The device according to claim 1 and 15, characterized in that to reduce to avoid occupancy of the inner surface of the coupling window (36) for the target laser beam (12) with ablated target material, the length of the Einkoppelflansches (35), taking into account the required focal length of the outside the coating chamber (5) arranged lens (18) for focusing the target laser beam (12) on the target (15) as long as possible and / or between the located in Ablationsposition target (15) and the coupling window (36) synchronously with the Targetlaserstrahlscann and perpendicular to the target laser beam (12) movable, only the laser beam cross-section releasing aperture (31) is mounted and / or magnetic field generating arrangements for deflecting the ablated, ionized Zielteilchenstromanteils of the window inner surface are present.

17. The device according to claim 1, characterized in that the means for coupling the substrate laser beam (13) with a predetermined cross section on the layer surface of the located in the relaxation position of the substrate (14) from a high vacuum-tight flanged window from one for the wavelength of the substrate laser beam (13). transparent material sized, shaped and arranged so that the substrate laser beam (13) during relative movement between the substrate laser beam (13) and the surface of the relaxation position substrate (14), preferably by movement of the carrier (8) and / or the substrate (14) and / or by scanning the substrate laser beam (13) over the layer surface, either perpendicular or at a predetermined variable angle to the layer surface is directed.

18. The device according to claim 1, characterized in that both in and / or outside of the coating chamber (5) components of at least one of in situ measuring means for determining the pulse energy, the fluence and the fluence distribution of the target (12) and the substrate laser beam (13 ), for determining the layer deposition rate and the layer thickness, for determining the layer tension, for determining the substrate and layer surface temperature and for determining the target surface temperature and for assessing the layer quality are arranged and that the in situ measuring device is connected to the data processing system.

19. The device according to claim 18, characterized in that for in situ control of the pulse energy, the fluence and the fluence distribution of the laser beam laser power and Laserpulsenergiemessgeräte and laser beam profilers and that for in situ control of the Schichtabscheiderate, the layer thickness, the thickness of the respective deposited sublayer and the layer quality an in situ ellipsometer are arranged.

20. The device according to claim 18, characterized in that an optical interference measuring device is arranged so that the laser beam (24), preferably a diode laser (23), which is absorbed by the layer material only slightly below a predetermined angle different from zero degrees is directed onto the growing layer and is reflected both at the growing layer surface (25) and at the layer-substrate interface (26), the reflected beam portions (27) interfering and the periodic intensity variations resulting with increasing layer thickness with the aid of a reflection direction of the laser beam (24) arranged photodetector (28) registered and passed as a measurement signal to the data processing system.

21. The device according to claim 18, characterized in that preferably pyrometers are arranged for in situ measurement of the target, substrate and layer surface temperature.

22. The device according to claim 18, characterized in that for in situ determination of the layer stress during the coating process and for controlling the voltage reduction during the voltage reduction processes on the carrier (8) in the vicinity of a substrate (14) mounted attached only at one end cantilever is, is determined during the coating process with increasing thickness of the growing sublayer increasing radius of the bending and during the voltage reduction process of this sublayer again decreasing radius of bending and evaluated.

23. Device according to claim 1, characterized in that in the coating chamber (5) at least one ion beam station for ion irradiation of preferably located in or immediately adjacent to the coating position substrate (14) and the surface of the respective growing or just deposited super thin layer of ion beams ( Substrate beams) of predetermined mass, charge, energy and ion current density is arranged.

24. The device according to claim 23, characterized in that the ion beam station consists of a highly vacuum-tight flanged or in the coating chamber (5) built-in ion source (9) and an electron source for charge compensation and an energy, gas supply and cooling unit, wherein the ion beam composition, the Ion energy and the ion current density of the incident on the substrate (14) and optionally also on the growing or superposed super thin layer ion beam predetermined or varied and that the transition from the ion irradiation of the substrate surface for layer deposition and selective ion irradiation of the growing layer continuously without temporal Interruption and without interruption of the vacuum.

25. Device according to claim 1, characterized in that between the located in Ablationsposition target (15) and in the

Magnetic fields are present, the magnetic field lines are preferably perpendicular from the surface of the currently tarried surface (15) extend perpendicular to the currently coated surface of the substrate (14), wherein the target (15) and the substrate (14). are arranged opposite to each other with parallel or with each other at a predetermined angle inclined mid-perpendicular or inclined and offset from each other with a predetermined angle between the bisectors of at least 90 degrees.

26. The device according to claim 25, characterized in that behind the target (15) and behind the substrate (14) pole pieces (20) are arranged and that the pole pieces (20) via at least one in the coating chamber (5) arranged or through the Walls of the coating chamber (5) high-vacuum-tight inserted magnetic yoke (21) are connected to at least one current coil (22), so that the generation of the magnetic field to the concentration of the ionized

Target particle flow rate on the coating position substrate (14) and increasing the degree of ionization in the trailed target particle stream upon opposing placement of the ablation position target (15) and the substrate (14) by means of a magnetic circuit.

27. The device according to claim 25, characterized in that arranged to generate the magnetic field immediately before the target (15) and immediately in front of the substrate (14) and between the target (15) and substrate (14) magnetic coils or in the axial direction magnetized annular permanent magnet are.

28. The device according to claim 25, characterized in that magnetic coils and / or magnetized in the axial direction annular permanent magnets are arranged so that for additional reduction to avoid the installation of ablauerten particles in the growing layer with staggered and inclined arrangement of the target (15 ) and substrate (14) having a predetermined angle between the mid-perpendiculars of the just-baked target surface and the substrate surface being coated of at least 90 degrees, a preferably ring-sector magnetic field is present between the target (15) and the substrate (14).

29. The device according to claim 25, characterized in that magnetic coils and / or magnetized in the axial direction annular permanent magnets are arranged so that for additional reduction to avoid the installation of ablauerten particulates in the growing layer in opposite and preferably inclined arrangement of target (15 ) and substrate (14), there is a magnetic field in the form of at least a portion of a sinusoidal wave between the target (15) and the substrate (14).

30. The device according to claim 1, characterized in that between the target (15) and the substrate (14) at least one aperture (31) having a predetermined opening geometry is arranged and moved so that the ablated from the target (15), layer-forming Particle stream as vertical as possible but not under one Incident angle of greater than 60 degrees to the respective substrate or growing layer surface hits and deposited layers with a homogeneous thickness or with a predetermined lateral Dickengradienten.

31. The device according to claim 1, characterized in that the removal chamber (6) with a surface structuring station for laser micro- and / or laser nano-structuring of at least the deposited layers on the located in structuring position coated substrate (14) by means of focus or mask projection process.

32. The apparatus according to claim 31, characterized in that the surface structuring station from outside the removal chamber (6) arranged at least one laser and means for guiding, shaping and focusing and focus tracking or mask image plane tracking of the laser beam and to realize a relative movement between the laser beam and the substrate surface and a device for coupling this laser beam as structuring laser beam with a predetermined focus or mask imaging cross-section on the layer surface and at least one in situ position measuring and adjusting device for the in-structuring position substrate (14) and means for measuring and adjusting and tracking the focus position or the Mask imaging plane of the structuring laser beam is relatively and perpendicular to the layer surface.

33. The device according to claim 1, characterized in that the removal chamber (6) has at least one station for reducing the voltage of the deposited layers by thermal annealing.

34. Device according to claim 33, characterized in that the station for reducing the voltage of the deposited layers by thermal annealing a radiant heater exists.

35. The device according to claim 1, characterized in that the loading / pretreatment chamber (4), the coating chamber (5) and the removal chamber (6) for receiving a plurality of carriers (8) and corresponding to the feed / Vorbehandlungskarnmer (4) the use of multiple ion sources (9) or devices for generating a plasma, the coating chamber (5) for the use of multiple target stations, multiple voltage reduction stations and all power supply units and the control units for an automatic process flow are characterized by a modular structure and thus expandable.