DE102007009487A1 - Device for laser pulse deposition (PLD) of layers on substrates - Google Patents

Abstract

The invention relates to devices for laser pulse deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride (c-BN layers) on substrates with means for generating vacuum , with at least one device for ion beam or plasma generation, with lasers with devices for guiding, shaping, focusing and scanning laser beams and with at least one transport device for at least one carrier. These are characterized in particular by the fact that the layers can be generated mainly stress-free. For this purpose, in each case at least one feed / pretreatment chamber, a coating chamber and a removal chamber are arranged one after the other, in each case via a device for vacuum generation separately evacuated to high vacuum and separately ventilated and separated by vacuum locks, each at least one carrier with at least one substrate holder for receiving at least one substrate by means of the transport device with open vacuum lock from chamber to chamber is movable.

Description

The The invention relates to devices for laser pulse separation (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride layers (c-BN layers), on substrates with vacuum generating equipment, with at least a device for ion beam or plasma generation, with lasers with devices for guiding, shaping, focusing and for scanning laser beams and with at least one transport device for at least one carrier.

The DE 44 17 114 A1 (Device and method for particle-selective deposition of thin layers by means of laser pulse deposition - PLD) relates to an apparatus and a method by means of which, for example, high-purity thin layers can be produced. This is achieved with a device which contains at least one target, a substrate, a process gas, a device for generating a high-frequency electric field and a device for generating an electrical substrate bias. In this case, a laser plasma is generated on the target surface by a laser pulse, which is directed into the lying above the substrate surface half-space. Furthermore, a process gas is entered. In addition, a high-frequency electric field and an electric field generated by the substrate bias are built up in the half-space above the substrate surface.

By the DE 201 20 783 U1 (Thin film deposition equipment) is a system for depositing thin films on a substrate by pulsed laser deposition, with cylindrical target material, wherein one or more laser sources are focused on at least two locations on the target material.

These Solutions are limited to the coating of the substrates. Pre and post treatments of the substrates and the deposited layers are not provided.

Of the The invention defined in claim 1 is based on the object Devices for laser pulse deposition (PLD) of layers so too create that preferably diamond-like carbon layers with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride layers (c-BN layers) on variously shaped and also on temperature-sensitive Substrates can be generated mainly stress-free.

These Task is with the features listed in claim 1 solved.

The Devices for laser pulse deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride layers (c-BN Layers) on substrates with means for vacuum generation, with at least one device for ion beam or plasma generation, with lasers with devices for guidance, shaping, focusing and for scanning laser beams and with at least one transport device for at least one carrier, characterized in particular by it from that the layers are generated mainly stress-free can.

To each are at least one feed / pretreatment chamber, a coating chamber and a removal chamber arranged one after the other, each via a device for vacuum generation separately can be evacuated to high vacuum and ventilated separately and separated by vacuum locks, each at least a carrier having at least one substrate holder for receiving at least one substrate by means of the transport device when opened Vacuum lock is movable from chamber to chamber.

In each of the chambers is at least one carrier each with at least a substrate holder for receiving at least one substrate arranged by means of suitable transport devices when opened Vacuum lock can be transported from chamber to chamber. The introduction of the carrier loaded with at least one uncoated substrate in the ventilated feed / pretreatment chamber and the removal of the with the at least one coated substrate loaded carrier from the ventilated removal chamber takes place through high vacuum-tight lockable chamber doors.

In the feed / pretreatment chamber is either at least one Ion source for ion beam pretreatment of the substrate or at least a device for generating a plasma for plasma pretreatment of the substrate. By controlled relative movement between the Ion beam or the plasma and the substrate by means of moving devices for the carrier and the substrate holder becomes a homogeneous Pretreatment of the entire substrate or a substrate batch guaranteed on the carrier.

Components of at least one target station and at least one voltage reduction station are respectively arranged in and outside the coating chamber. The target station consists of egg A target holder mounted in the coating chamber has at least one target which is arranged in the ablation position and at a predetermined distance from the substrate located on the carrier in the coating position. As further constituents of the target station, at least one laser and at least one device for guiding, shaping, focusing and scanning a laser beam, the target laser beam, are arranged outside the coating chamber via the target located in the ablation position and a device for coupling this target laser beam onto the target flanged to the coating chamber. In this case, the target laser beam is directed onto the target surface at a predetermined angle of incidence of less than 70 degrees, so that the laser beam energy is deposited in a small target volume, thereby ablating an intense target particle stream with the highest possible particle energy.

The stress reduction station for the laser-induced reduction of the stresses of deposited sublayers of predetermined thickness on the substrate in the relaxation position on the carrier consists of at least one laser and at least one device arranged outside the coating chamber for guiding, shaping, focusing and scanning at least one laser beam and one on the coating chamber flanged means for coupling this laser beam, the substrate laser beam, with a predetermined cross section of the layer surface. The target in ablation position and the substrate in coating position on the carrier are furthermore preferably arranged opposite one another and at a small distance from one another and / or are additionally moved in a controlled manner relative to each other so that the layer-forming ablated from the target Particle stream perpendicular or largely perpendicular, but not incident at an angle of incidence of greater than 60 degrees to the respective substrate or growing layer surface and deposited sub-layers with a homogeneous and predetermined thickness or with a predetermined lateral Dickengradienten. With increasing angle of incidence, a slightly higher target laser beam fluence for increasing the target particle energy is to be selected, so that the required energy and pulse entry into the growing sublayer is still ensured by the target particles despite a larger angle of incidence, but no grazing incidence with incidence angles of greater than 60 degrees. When grazing incidence of the target particles on the substrate or growing layer surface of the energy and pulse entry of the target particles in the growing layer surface and the subplantation depth of the ablated from the target, the layer-forming particles in the layer surface are too small for the formation of the predetermined layer properties, such as a high sp ³ binding fraction in ta-C layers and the formation of the c-BN layer phase, even at very high fluences.

Farther the internal stresses of sub-layers of given thickness are transferred over the entire sub-layer area and the entire sub-layer thickness homogeneous or with predetermined gradients laterally over the Sub-layer area and over the sub-layer thickness by suitable arrangement and relative movement of itself on the carrier in voltage reduction position substrate and the substrate laser beam reduced.

The Deposition of sublayers and the stress reduction of deposited ones Sublayers preferably take place alternately until they are reached the predetermined total layer thickness.

The Coating position and the voltage reduction position of substrates located on the carrier can be the same or be different. At the same position, the substrate laser beam pulses become for voltage reduction preferably alternating between the Ablatierten from the target layer-forming Targetteilchenstrompulsen or after several target particle current pulses on the deposited sub-layer directed. In different position that will be in the coating position substrate after deposition of a sublayer with predetermined Thickness by movement of the carrier in the stress reduction position method.

About that In addition, the components of the device are coupled to a data processing system, so that with a program control the transport of the carrier and a predetermined variation of all parameters for the Pre-treatment, for the coating and the voltage reduction process he follows.

advantageous Embodiments of the invention are in the claims 2 to 33 indicated.

The carrier as a carrier of the at least one substrate holder and the at least one substrate according to the embodiment of claim 2 has the shape of a disc, a disc ring, a plate, a frame or a prism. In addition, the carrier is at least in the coating chamber for realizing a predetermined lateral relative movement of the substrate preferably parallel to the surface of the target located in Ablationsposition coupled with at least one drive to achieve a homogeneous or predetermined lateral layer thickness distribution and stress reduction. For the cyclical cont Continuous or stepwise transport of the substrate in the coating position and in the voltage reduction position and to achieve a homogeneous or predetermined lateral layer thickness distribution and stress reduction, a predetermined relative movement of the carrier, preferably parallel to the surface of the located in Ablationsposition target realized.

Of the Carrier is according to the development of claim 3 as a disc or disc ring formed. For the cyclic continuous or stepwise transport of the substrate to the coating position and in the voltage reduction position and to achieve a homogeneous or predetermined lateral layer thickness distribution and Voltage reduction becomes a predetermined relative movement, preferably parallel to the surface of the target in ablation position, realized. This is done by controlled continuous rotation the carrier at a given angular velocity or by stepwise rotation at predetermined angles about its preferably perpendicular to the target surface directed symmetry axis by means of existing drives and optionally also by controlled lateral and parallel displacement relative to the target by means of existing movement devices.

Of the Carrier is according to embodiment of claim 4 as a prism trained and arranged so that this preferably around his phased in parallel to the target surface by predetermined angle corresponding to the number of substrates occupied prism shell surfaces rotatable and for realization a predetermined relative movement of the substrates to the surface of the target in ablation position laterally and preferably parallel relative to the target surface by means of existing BeWe supply facilities predetermined displaced.

To the embodiment of claim 5 is in the carrier at least a moving device for the substrate holder integrated so that the substrate around its axis of symmetry or about its center of symmetry rotated at predetermined angular velocity and / or cyclically over a predetermined angular range inclined to the target surface becomes.

Thus, an improvement in the homogeneity of the layer thickness distribution and the voltage reduction can be achieved. For complicated three-dimensional substrate surface geometries, such as drills and cutters, the substrates can be simultaneously cyclically tilted over a given angular range to the target surface. Due to the predetermined relative movement of the carrier and rotation and optionally cyclical inclination of the substrate during the layer growth process is at least temporarily a perpendicular incidence of the ablated target particles on the respective substrate or layer surface, whereby the incident ablated energetic target particles required for the emergence of specific layer properties energy and Ensure impulse entry into the growing layer surface. For example, a high sp ³ bond fraction can be generated in ta-C layers or the cubic boron nitride phase in c-BN layers.

Of the Target holder is disk-shaped according to the embodiment of claim 6 or disc-shaped. Furthermore owns the target holder a plurality of circularly arranged target holders for receiving and for cooling or heating of preferably disc-shaped targets or of radial or tangential arranged on the target holder cylindrical targets. These consist of a target material or various types Target materials. In addition, the target station owns a device for rotating the target holder about its axis of symmetry by predetermined angles corresponding to the number of targets for rotation of the individual targets in the ablation position.

Of the Target holder has according to the embodiment of the claim 7 at least one device for rotating the ablation position Targets about its axis of symmetry at a given angular velocity.

Of the Target holder or at least individual target holders of the target holder are formed according to the embodiment of claim 8 so that the target surface is in ablation position located targets in parallel or below a predetermined adjustable Angle to the surface of the coating in position directed substrate is directed.

To the development of claim 9 is a target holder or several are preferably rotationally symmetrical and arranged prism-shaped Target holder for holding and for cooling or heating of cylindrically shaped targets an integral part the target station. These targets are either made of a target material or consist of several segments of different target materials composed. Furthermore, the target station has at least one Device for rotation at least in the ablation position Targets at a given angular velocity about his Symmetry axis on.

The at least one device for rotation is according to the embodiment of patent claim 10 Advantageously, each provided with a device for the predetermined displacement of the target segments parallel to the axis of symmetry of the respective target in the ablation position.

Of the Target holder is prism-shaped according to the embodiment of claim 11 formed and has prismenmantelflächeartig arranged target holders for receiving and for cooling or heating of flat plate-shaped Targets. The targets have, for example, the shape of a rectangle. In addition, the target holder is gradually by predetermined Angle according to the number of target holders rotatable and to realize a predetermined relative movement between the in ablation position target and in the coating position substrate laterally and preferably parallel relative to the substrate surface controlled displaced.

To The development of claim 12 is at least one protective shield for at least one not in ablation position Targets and for at least one not in coating position disposed substrate in the coating chamber. Thereby These are ablated with a surface contamination Foreign material protected.

The Device for coupling the target laser beam on the in ablation position target exists after the training of claim 13 from a high vacuum on a coupling flange flanged coupling window of one for the wavelength the target laser beam transparent material. The coupling flange cross section and the coupling window are still in their size so dimensioned that the target laser beam over the entire Surface of the target in ablation position either only linear with constant or predetermined varied speed with rotating disc-shaped or cylindrical Targets or two-dimensional planar with non-rotating Target, for example spirally with constant vector velocity or circular and linear progressively scanned can be a uniform, depending on the target shape and target movement Target removal over the entire target area to reach.

The Symmetry axis of the coupling flange is still either below inclined at a predetermined angle to the target surface or by bellows intermediate piece among several predetermined Angles to the target surface inclinable, so that the target laser beam preferably at a certain angle or under different predetermined angles are directed to the target surface can. The target laser beam used must be one for the effective target ablation process of the respective target material and for the generation of a high energy target particle stream in the direction of the substrate suitable wavelength, pulse duration and fluence, as well as fluence homogeneity or fluence distribution have the focus cross section on the target surface.

Of the wavelength-dependent material-specific absorption coefficient of the target material must be for the wavelength of the Target laser beam be large enough for the Photons absorbed in as small a volume as possible and the ablated particles thereby at sufficiently high Fluenz received enough high energy for the formation of optimal layer properties, for example for the production of superhard ta-C and c-BN layers, required are. The pulse duration should be at least in the time domain of a few 10 ns and lower, so that by heat conduction only a negligible proportion of the photon energy can drain off the absorption volume.

To The development of claim 14 is to reduce until to avoid occupying the inner surface of the coupling window for the target laser beam with ablated target material the length the Einkoppelflansches considering the required focal length of the arranged outside the coating chamber lens for Focusing the target laser beam on the target as long as possible formed as the number of target particles on the window get close to the square of the window target distance reduced. This will occupy the inner surface of the Coupling window for the target laser beam with ablated Target material used to reduce the fluence of the target laser beam on the target, reduced to avoided.

A further avoidance of window occupancy can be achieved if by a suitable choice of the length of Einkoppelflansches the Fluence of focused on the target and over the target surface and thereby also over a surface area of the Coupling window scanned target laser beam on the occupied Window inner surface is still big enough to that deposited target material again from the window inner surface to ablate.

Farther can be between the target located in ablation position and the coupling window synchronously with the target laser beam scan and perpendicular to the target laser beam movable, only the laser beam cross section be attached releasing aperture.

In addition, magnetic field generating arrangements for deflecting the ablated ionized target particle flow component from the window inner surface may be present. This will be an Ver achieved ringing of the occupancy of the inner surface of the coupling window with target material. Advantageously, for example, rotationally symmetrical and funnel-shaped diverging magnetic fields whose field lines extend to the walls of Einkoppelflansches and not to the coupling window.

According to the embodiment of claim 15, the device for coupling the substrate laser beam with a predetermined cross section onto the layer surface of the substrate located in the relaxation position consists of a highly vacuum-tight flanged window of a material transparent to the wavelength of the substrate laser beam. This window can advantageously be arranged in the lid of the coating chamber to be opened by a mechanism. This window is sized, shaped and arranged so that the substrate laser beam during relative movement between the laser beam and the surface of the relaxation position substrate, preferably by movement of the carrier and / or the substrate and / or by scanning the substrate laser beam is directed over the layer surface, either perpendicular or at a predetermined variable angle to the layer surface. The substrate laser beam used furthermore has a wavelength, pulse duration and fluence suitable for the voltage reduction of the respective layer material, as well as fluence homogeneity or fluence distribution over the laser beam cross section on the layer surface. For effective voltage reduction, the photons of the substrate laser beam need only be absorbed in the sublayer material to be relaxed. Consequently, the wavelength-dependent material-specific absorption coefficient of the layer material for the selected substrate laser wavelength must be sufficiently large so that the penetration depth of the photons lies only in the region of the deposited sub-layer thickness. For the voltage reduction of ta-C layers, for example, a KrF excimer laser with 248 nm wavelength and for the voltage reduction of c-BN layers F ₂ laser with 157 nm wavelength can be used. For the voltage reduction process, a homogeneous fluence distribution over the laser beam cross section on the layer surface without fluence spots is advantageous.

In and / or outside the coating chamber are after the Development of claim 16 constituents of at least one the in situ measuring equipment for determining the pulse energy, Fluence and the fluence distribution of the target and substrate laser beams, for determining the layer deposition rate and the layer thickness, for Determination of the layer stress, to determine the substrate and Layer surface temperature and to determine the target surface temperature or arranged to assess the quality of the layer. The in situ measuring device is interconnected with the data processing system, so that a measured value-dependent control of the laser pulse separation (PLD) of layers on substrates.

To The development of claim 17 are for in situ control the pulse energy, the fluence and the fluence distribution of the laser beams Laser power and laser pulse energy meters as well as laser beam profilometers and for in situ control of the layer deposition rate, the layer thickness, the Thickness of the respective deposited sub-layer and the layer quality an in situ ellipsometer arranged.

To The development of claim 18 is an optical interference measuring device arranged so that the laser beam is preferably a diode laser with a suitable wavelength, of the layer material only is little absorbed, under a predetermined, different from zero degrees Angle of incidence directed at the growing layer and both at the growing layer surface as well as at the Layer substrate interface is reflected, wherein the Reflected beam components interfere and with increasing layer thickness resulting periodic intensity fluctuations with the help a arranged in the reflection direction of the laser beam photodetector registered and passed as a measurement signal to the data processing system become.

Out the periodic almost cosinusoidal course of the measurement signal with decreasing amplitude, the Schichtabscheiderate and the layer thickness be determined. A periodic, almost cosinusoidal Course of the measuring signal with continuously decreasing amplitude with continuous increase in thickness of the growing layer points in doing so, the consistency of the coating is constant.

to in situ measurement of target, substrate and layer surface temperature are according to the embodiment of claim 19 preferably pyrometer arranged.

For in situ determination of the layer tension during the coating process and to control the voltage reduction during the voltage reduction processes is attached to the carrier in the vicinity of a substrate attached only at one end cantilever according to the embodiment of claim 20, which during the coating process with increasing thickness of the growing Sublayer increasing radius of curvature and during the stress reduction process of this sublayer again decreasing radius of curvature determined and out is valued.

Of the Radius of bending, for example, by means of two each of the fixed and loose end of the cantilever reflected diode laser beams and a position sensitive beam detector (PSD) become.

In the coating chamber is according to development of the claim 21 at least one ion beam station for ion irradiation of the preferably in or immediately adjacent to the coating position located substrate and the surface of the respective growing or just deposited super thin layer with ion beams (substrate beams) of given mass, charge, Energy and ion current density arranged. This serves for irradiation with ion beams both preferably in the coating position substrates to absorption layers immediately in front of the To remove coating, as well as the surface of the respective growing or newly deposited layer additional energy and atomic particles for the film formation process to lead.

The Ion beam station consists after the development of the claim 22 from a high vacuum-tight flanged or in the coating chamber built-in ion source and an electron source for charge compensation of the ion beam and outside the coating chamber arranged energy, gas supply and cooling units for the operation of the ion source and the electron source. The ion beam composition, the ion energy and the ion current density on the substrates and optionally on the growing or just deposited super thin layer impinging ion beam is preset or varies. The transition from the ion irradiation of the substrate surface for layer deposition and for optional ion irradiation of the growing layer takes place continuously without interruption and without interruption of the vacuum.

The Ion beam composition, ion energy and ion current density on the substrates and optionally on the growing or just deposited super thin layer impinging ion beam be preset or during the irradiation varied. By the ion irradiation of the substrates immediately before the Coating should absorption layers of residual gas constituents, which leads to a reduction in the adhesive strength of the subsequently deposited can be removed. By the ion irradiation the growing or newly deposited layer becomes additional Energy supplied for the film formation process and / or the deposition of layers of compounds stoichiometry by additional supply of at least one component the compound targeted as ions.

Between the target located in ablation position and located in Coating position located substrate are according to the development of claim 23 magnetic fields present whose magnetic field lines preferably perpendicular to the surface being ablated of the target until perpendicular to the just coated surface of the target Substrate, with the target and the substrate opposite with parallel or mutually inclined at a predetermined angle mid-perpendicular or inclined and offset from each other at a predetermined angle placed between the mid-perpendiculars of at least 90 degrees are.

These Magnetic fields cause a concentration of the sideways ablated from the target ionized particle flow on the substrates and an increase in the degree of ionization in the ablated Target particle flow and additionally a reduction to Avoid incorporation of target ablated particulates into the growing up layer. The magnetic field lines preferably run perpendicular to the just ablated surface of the target up perpendicular to the surface of the surface to be coated Substrate, so that the ablated ionized atomic target particles and the ablated electrons on spiral paths along the magnetic field lines be guided to the substrate and a spatial charge separation between the ablated ionized target particles and the approximately the same number of ablated electrons is avoided and thus no the ion energy reducing Coulomb interaction between the Both types of charge carriers arise.

The increase in the degree of ionization in the ablated target particle stream by magnetic field-enhanced electron impaction of preferably ablated neutral target particles in the laser-induced plasma near the target surface is based on the following principle: The electrons ablated with about the same energy and comparable energy distribution as the ionized and neutral atomic target particles are close to the target by Coulomb interaction Delayed with the ionized target particles and the ionized target particles accelerated until both types of charge carriers move with comparable speed and speed distribution in the direction of substrates. In the immediate vicinity of the target, however, there is still a high particle density and a high-density laser-induced plasma, in which the electrons still have a sufficiently high energy for the ionization of ablated neutral target particles and their impact probability with these Particles increased by the spiral path movement along the magnetic field lines.

Each behind the target and the substrate are after the development of the Patent claim 24 pole shoes arranged. These are still over at least a disposed in the coating chamber or through the walls the coating chamber introduced high vacuum-tight magnetic Yoke connected to at least one power coil. Thus, the Generation of the magnetic field for concentration of the ionized target particle stream fraction on the in coating position located substrate and the Increasing the degree of ionization in the ablated target particle stream with opposite arrangement of the ablation position located targets and the substrate by means of a magnetic Circle.

immediate in front of the target as well as directly in front of the substrate and between target and substrate are according to the embodiment of claim 25 Magnetic coils or annularly magnetized in the axial direction Permanent magnets arranged.

The Magnetic field arrangements according to claims 24 and 25 can also be combined with each other, thereby providing the required amperage in the solenoid coils can be reduced.

solenoids and / or in the axial direction magnetized annular Permanent magnets are according to the embodiment of the claim 26 arranged so that in addition to the concentration of the ionized Target particle flow rate on the substrates for reduction up to Avoidance of incorporation of ablated particulates in the growing layer in mutually offset and inclined arrangement of the target and Substrate at a predetermined angle between the bisectors the just ablated target surface and straight to coating substrate surface of at least 90 degrees a preferably annular sector-shaped magnetic field between the target and the substrate is present.

To The development of claim 27 are magnetic coils and / or in the axial direction magnetized annular permanent magnet arranged so that additional reduction to avoidance the incorporation of ablated particulates into the growing layer with opposite and inclined arrangement of target and Substrate is a magnetic field in the form of at least part of a sine wave Torus between the target and the substrate is present.

By the developments according to claim 26 and 27 is ensured that the substrate surface to be coated by the just ablated target surface of geometric-optical not is visible, so that the neutral, non-charged Targetteilchenstromanteil and especially the neutral particulates with multiple atomic mass and also the ionized particulates, because of their large size Larmorradius, did not get to the substrates and only the ablated ones ionized atomic target particles for the film formation process be used.

Between the target and the substrate is according to the embodiment of the claim 28 at least one aperture with predetermined opening geometry arranged and moved so that the ablated from the target, layer-forming particle flow as perpendicular as possible, however not below an angle of incidence greater than 60 Degree on the respective substrate or growing layer surface impinges and layers of homogeneous thickness or with a predetermined lateral thickness gradients are deposited.

By an aperture shape adapted to the substrate geometry and optionally predetermined movement of the aperture relative to the target and substrate, target particle stream portions which would strike the substrate surface grazing at an angle of incidence of greater than 60 degrees would be masked out and not used for film formation. When the target particles strike the substrate surface, the energy and momentum input of the target particles into the growing layer surface is too low for the formation of particular layer properties, for example for producing a high sp ³ bond fraction in ta-C layers or the cubic boron nitride phase in c BN layers.

The Removal chamber is according to the embodiment of claim 29 with a surface structuring station for laser micromachining and / or laser nanostructuring of at least the deposited ones Layers on the coated in structuring position Substrate equipped by means of focus or mask projection method.

The surface structuring station consists according to the embodiment of claim 30 from outside the removal chamber arranged at least one laser and means for guiding, shaping and focusing and focus tracking or mask image plane tracking of the laser beam and to realize a relative movement between the laser beam and substrate surface and a device for coupling this laser beam as Structuring laser beam with a predetermined focus or mask image cross-section on the layer surface and at least one in situ position measuring and adjusting device for the structuring position dende substrate and means for measuring and adjusting and tracking the focus position or the mask image plane of the structuring laser beam relative and perpendicular to the layer surface.

The Withdrawal chamber has according to the embodiment of the claim 31 at least one station for voltage reduction of the deposited Layers by thermal annealing.

The Station for voltage reduction of the deposited layers by thermal annealing consists after the development of the claim 32 from a radiant heater. With several substrates on one Carrier advantageously the substrates are annealed simultaneously. The photon wavelength to reach a high absorption in the layer material selected and the irradiation intensity to adjust the required, of layer material and substrate material dependent maximum Temperature controlled and kept a predetermined time.

To the development of claim 33 are the loading / pretreatment chamber, the coating chamber and the sampling chamber for receiving several carriers and according to the feed / pretreatment chamber for the use of multiple ion sources or more Means for generating a plasma, the coating chamber for the use of multiple target stations, several Voltage reducing stations and and all power supply units and the control units for an automatic process flow characterized by a modular structure and thus expandable.

In order to is the device for productive laser pulse separation (PLD) of Layers on substrates built up modularly and can thus if required Increasing productivity cost-effectively be extended.

embodiments The invention are illustrated in principle in the drawings and will be described in more detail below.

It demonstrate:

1 a device for laser pulse deposition (PLD) of ta-C layers on substrates,

2 a device for a magnetic circuit with pole shoes on a yoke in the coating chamber,

3 a measuring device for in situ control of the layer deposition rate and the thickness of the growing sub-layer and the layer quality,

4 and 5 Carrier and target arrangements for coating cylindrical workpieces, such as drills and cutters, as substrates,

6 a carrier and a target arrangement for coating cutting plates as substrates,

7 a carrier for coating substrates in the form of cylinders,

8th a carrier for coating substrates in the form of needles and spheres,

9 to 11 Carrier and target arrangements for the ion coating of short hollow cylinders as substrates,

12 and 13 a target holder with rotatably arranged cylindrical targets,

14 a carrier and a target arrangement with axis-parallel arrangement of cylindrical targets and substrates,

15 a cross section of the coating chamber for a device for laser pulse deposition (PLD) of cubic boron nitride (c-BN layers) on substrates,

16 a device for laser pulse deposition (PLD) of ta-C layers on the lateral surface of larger substrates in cylindrical form,

17 a device for laser pulse deposition (PLD) of ta-C layers on substrates with a flat rectangular shape,

18 a target holder for targets with a rectangular plate shape,

19 a carrier in prismatic form,

20 an arrangement for the inner coating of hollow cylindrical bodies as substrates of larger dimensions,

21 a carrier, substrate and target arrangement for coating lateral surfaces of substrates as long cylinders.

1st embodiment

A device for laser pulse deposition (PLD) of ta-C layers on substrates consists in Essentially from a laser 1 for generating the target laser beam, a laser 2 for generating the substrate laser beam, a loading station 3 for loading a carrier 8th with substrates 14 , a feed / pretreatment chamber 4 for introducing the carrier 8th in a coating chamber 5 and for cleaning the substrates 14 through an ion source 9 , the coating chamber 5 for alternating deposition of sublayers and laser-induced voltage reduction of these sublayers up to the predetermined total layer thickness, a removal chamber 6 for removal of the carrier 8th from the coating chamber 5 and an unloading station 7 for unloading the substrates 14 from the carrier 8th ,

The 1 shows a device for laser pulse deposition (PLD) of ta-C layers on substrates in a schematic representation.

At least the feed / pretreatment chamber 4 , the coating chamber 5 and the extraction chamber 6 are arranged one after another. These chambers are by vacuum locks 10 connected together, which in the open state, the transport of the carrier 8th From chamber to chamber and in the closed state, the separate venting and evacuating up to high vacuum of each chamber allow. For this purpose, each chamber is connected to a device for vacuum generation and ventilation. Such devices are known and in the representation of 1 Not shown. To transport the carrier 8th from the loading station 3 into the feed / pretreatment chamber 4 and from the extraction chamber 6 to the unloading station 7 own these chambers 4 . 6 high vacuum-tight lockable doors. For installing or removing devices in the chambers, for changing the targets 15 and for performing maintenance are the top surfaces of the chambers 4 . 5 . 6 or at least parts of the cover surfaces designed as a high vacuum-tight sealable lid or wall areas.

The carriers 8th are coupled with a transport device, so that the transport from the loading station 3 through the chambers 4 . 5 . 6 to the unloading station 7 and a positioning of each carrier 8th in the respective chamber 4 . 5 . 6 guaranteed in the processing position. Thus, the device is an automatically operable continuous flow system, wherein in each case after an initial phase, a carrier 8th in the loading station 3 , in each of the chambers 4 . 5 . 6 as well as in the unloading station 7 located.

The carriers 8th are disc-shaped plates as a support for the substrates 14 , They are in the chambers 4 . 5 . 6 Carrier in processing position 8th are rotated by means of existing driven rotating devices in rotation about their axis of symmetry at a predetermined angular velocity. In addition, they rotate on the carrier 8th positioned substrate holder with the substrates 14 at the same time about its axis of symmetry with given angular velocity. The substrates 14 are for example slices. These rotations result in a homogeneous ion beam cleaning process of the substrates 14 in the feed / pretreatment chamber 4 , and an alternating homogeneous coating process of the substrates 14 and stress reduction process of the deposited sub-layers in the coating chamber 5 guaranteed.

After transporting in the loading station 3 with substrates 14 loaded carriers 8th in the processing position in the feed / pretreatment chamber 4 this is evacuated. This is followed by the pretreatment of the substrates 14 by ion beam exposure by means of the ion source 9 , Preferably, noble gas ions, preferably argon ions, with ion energies in the range of 500 to 5000 eV and ion current densities on the substrate surface of 200 to 1000 μA / cm ² are used for this purpose. The angular velocities for the rotation of the carrier 8th are in the range of 0.02 to 0.15 s ^-1 and for the self-rotation of the substrates 14 in the range of 0.2 to 1.5 s ^-1 . For a carrier 8th for example, with an outer diameter of 600 mm, with 100 substrates 14 with a diameter of 30 mm in two rows in an annular manner, the time for the cleaning cycle is 10 to 30 min. After the transport of the carrier 8th with the purified substrates 14 in the processing position of the coating chamber 5 without interruption of the vacuum, the alternating laser pulse deposition of sub-layers of predetermined thickness takes place on the substrates located in the coating position 14 located below the ablation position target 15 at a distance of 30 mm to 70 mm, and the stress reduction of the deposited sublayers on the stress reducing position substrates 14 , The coating position and the stress reduction position of the substrates 14 on the carrier 8th lie opposite each other. By the rotation of the carrier 8th at predetermined angular velocity thus become simultaneously and continuously substrates 14 coated and just deposited sublayers reduced voltage. This will work on every substrate 14 on the carrier 8th during a complete turn of the carrier 8th produced a further voltage-reduced sub-layer. The self-rotation of the substrates 14 around its axis of symmetry allows the deposition of layers with a homogeneous thickness and a homogeneous voltage reduction process over the entire substrate surface.

On the disk-shaped coolable target holder 11 are six targets 15 in shape attached by circular discs. For this purpose, the targets can advantageously be in target holders of the target holder 11 are located. To rotate the individual targets 15 in the ablation position is the target holder 11 rotatably arranged and can according to the number of targets 15 be gradually rotated 60 degrees. For the deposition of ta-C layers are on the target holder 11 five targets 15 of pyrolytic graphite and a target 15 made of boron or tungsten carbide, with the diameters of the targets 15 for example, be 50 mm. The target 15 Boron or tungsten carbide is used for the PLD deposition of an adhesion-promoting intermediate layer on the substrates 14 , whose total layer thickness depends on the surface roughness of the substrates 14 in the range of 30 nm to 250 nm. After the deposition of this adhesion-promoting intermediate layer, the PLD deposition of the ta-C layer takes place with a total layer thickness in the range from 500 nm to 5 μm, the sub-layer thicknesses being 50 nm to 150 nm. To overheat the targets 15 graphite despite cooling during the continuous ablation process by the target laser beam 12 to avoid and as long as possible operation of trained as a continuous system device without renewal of these targets 15 To ensure these are rotated alternately in the ablation position. This can for example be during the transport of the carrier 8th respectively.

With a belonging to the target station device 16 for guiding, shaping, focusing and scanning, the target laser beam 12 over the surface of the target in ablation position 15 guided. This device 16 is outside the coating chamber 5 arranged and consists for example of two deflecting mirrors 17a . 17b and a lens 18 , The target laser beam 12 passes through a coupling window of the coating chamber 5 in their interior.

That of a KrF excimer laser as a laser 1 emitted target laser beam 12 with a wavelength of 248 nm becomes by successive reflection at the first in the x-direction movable deflecting mirror 17a and at the second in the y-direction movable deflection mirror 17b on the target in ablation position 15 directed and with the help of the z-direction movable lens 18 focused on the target surface. In this case, a predetermined angle of incidence of the target laser beam 12 adjusted to the target surface of less than 70 degrees. To improve the laser beam homogeneity, in one embodiment, in front of the first deflection mirror 17a additionally be arranged a homogenizer. To ensure the most homogeneous distribution of fluence over the cross section of the target laser beam 12 to achieve, is the laser 1 operated as KrF excimer laser preferably with unstable resonator. The coupling of the target laser beam 12 in the evacuated coating chamber 5 takes place by a high-vacuum-tight at a Einkoppelflansch, preferably on the side wall of the coating chamber 5 attached, flanged coupling window made of quartz glass. The length of the Einkoppelflansches and thus the distance between the coupling window and the target surface is taking into account the focal length of the outside of the coating chamber 5 arranged lens 18 chosen so that the fluence of the target laser beam 12 on the window inner surface is sufficient to from the target 15 Ablated and deposited on the window inner surface material by laser ablation to remove again. By a controlled movement of the deflection mirror 17a . 17b in x- and y-direction becomes the focus of the target laser beam 12 spiraling at constant vector velocity over the entire target surface of the target 15 Scanned as a slice to a homogeneous removal of the target 15 and to ensure a homogeneous surface density of the ablated particle flow in the direction of the substrates in the coating position 14 to create. With increasing removal of the target 15 is a tracking of the focus of the target laser beam 12 by a controlled movement of the lens 18 required in z-direction. By the opposite arrangement of the target located in Ablationsposition 15 and the substrates in the coating position 14 and by inserting a shutter with a circular opening between the target 15 and the substrates 14 This ensures that the target 15 ablated layer-forming particle flow does not impinge on the respective substrate or growing layer surface at an angle of incidence of greater than 60 degrees. At the same time, the diaphragm protects the targets that are not in ablation position 15 before an assignment with foreign material.

The voltage reduction station for the laser-induced reduction of the voltages of the deposited sublayers consists of the laser 2 for generating the substrate laser beam 13 , one outside the coating chamber 5 arranged beam shaping optics 19 and one on the lid of the coating chamber 5 Flanged coupling window made of quartz glass. The one from the laser 2 Substrate laser beam emitted as KrF excimer laser 13 with a wavelength of 248 nm is using the beam shaping optics 19 formed into a laser beam with a rectangular laser beam cross-section, and thus reaches the layer surface of the in-relaxation position located substrates 14 , In order to achieve a homogeneous fluence distribution without fluence spots over the laser beam cross section, the laser becomes 2 operated as KrF excimer laser, preferably with a stable resonator.

In a further embodiment, the Concentration of sideways from the target 15 ablated ionized particle flow onto the substrates in the coating position 14 and at least one magnetic field is used to increase the degree of ionization in the ablated target particle stream. The magnetic field lines of the magnetic field advantageously extend perpendicularly from the ablated surface of the target 15 to perpendicular to the surface to be coated of the substrates 14 ,

The 2 shows a device for a magnetic circuit with pole shoes 20 at a yoke 21 in the coating chamber 5 in a schematic representation.

The magnetic circuit consists of over the target located in Ablationsposition 15 and under the substrates in the coating position 14 arranged pole shoes 20 given geometry, via a yoke 21 of a magnetic material, preferably soft iron, with at least one current coil 22 connected to generate the magnetic field.

With magnetic flux densities in the range of 100 to 150 millitesla, for example, an increase in the layer deposition rate of up to 20% can be achieved at a target substrate distance of 50 mm, since without magnetic field only about 75% of the target is at a maximum angle of 30 degrees to the target normal 15 ablated target particle stream on the substrates 14 reach.

• a) Einsatz von zwei KrF-Lasern zur Erzeugung des Target- 12 und des Substratlaserstrahls 13
• – Targetlaserstrahl 12: Laserpulsenergie auf dem Target 600 mJ, Pulswiederholfrequenz 50 Hz, Laserstrahlfluenz auf dem Target 12 bis 15 J/cm², Fokusquerschnitt auf dem Target 4 bis 5 mm².
• – Substratlaserstrahl 13: Laserpulsenergie auf der Schicht 600 mJ, Pulswiederholfrequenz 50 Hz, Laserstrahlfluenz auf dem Substrat 150 bis 300 mJ/cm², Fokusquerschnitt auf dem Substrat 2 bis 4 cm², Schichtabscheiderate bei unbewegtem Substrat bis 200 nm/min, Dickeninhomogenität bei bewegtem Substrat kleiner 5%, beschichtbare Fläche pro Stunde mit einer 1 μm dicken ta-C Schicht 730 cm² oder 72 Scheiben mit 30 mm Durchmesser.
• b) Einsatz von zwei KrF-Lasern zur Erzeugung des Target- 12 und des Substratlaserstrahls 13
• – Targetlaserstrahl 12: Laserpulsenergie auf dem Target 600 mJ, Pulswiederholfrequenz 300 Hz, Laserstrahlfluenz auf dem Target 12 bis 15 J/cm², Fokusquerschnitt auf dem Target 4 bis 5 mm²,
• – Substratlaserstrahl 13: Laserpulsenergie auf der Schicht 600 mJ, Pulswiederholfrequenz 300 Hz, Laserstrahlfluenz auf dem Substrat 150 bis 300 mJ/cm², Fokusquerschnitt auf dem Substrat 2 bis 4 cm², Schichtabscheiderate bei unbewegtem Substrat bis 1000 nm/min, Dickeninhomogenität bei bewegtem Substrat kleiner 5%,

beschichtbare Fläche pro Stunde mit einer 1 μm dicken ta-C Schicht 4380 cm² oder 432 Scheiben mit 30 mm Durchmesser.The following are typical parameters for the deposition of ta-C layers on flat substrates with the device according to the principle of the 1 at a target-substrate distance of 50 mm, use of a magnetic field according to the basic representation of 2 with a magnetic flux density of 140 millitesla and angular velocities for the rotation of the carrier 8th in the range of 0.02 to 0.15 s ^-1 and for the self-rotation of the substrates 14 in the range of 0.2 to 1.5 s ^-1 indicated:

• a) Use of two KrF lasers to generate the target 12 and the substrate laser beam 13
• - Target laser beam 12 : Laser pulse energy on the target 600 mJ, pulse repetition frequency 50 Hz, laser beam fluence on the target 12 to 15 J / cm ² , focus cross section on the target 4 to 5 mm ² .
• - Substrate laser beam 13 : Laser pulse energy on the layer 600 mJ, pulse repetition frequency 50 Hz, laser beam fluence on the substrate 150 to 300 mJ / cm ² , focus cross-section on the substrate 2 to 4 cm ² , film deposition rate in still substrate up to 200 nm / min, thickness inhomogeneity with moving substrate less than 5 %, coatable area per hour with a 1 μm thick ta-C layer 730 cm ² or 72 slices with 30 mm diameter.
• b) Use of two KrF lasers to generate the target 12 and the substrate laser beam 13
• - Target laser beam 12 : Laser pulse energy on the target 600 mJ, pulse repetition frequency 300 Hz, laser beam fluence on the target 12 to 15 J / cm ² , focus cross section on the target 4 to 5 mm ² ,
• - Substrate laser beam 13 : Laser pulse energy on the layer 600 mJ, pulse repetition frequency 300 Hz, laser beam fluence on the substrate 150 to 300 mJ / cm ² , focus cross-section on the substrate 2 to 4 cm ² , film deposition rate with unmoved substrate up to 1000 nm / min, thickness inhomogeneity with moving substrate less than 5 %

coatable area per hour with a 1 μm thick ta-C layer 4380 cm ² or 432 slices with 30 mm diameter.

For in situ control of the layer deposition rate, the thickness of the growing sub-layer and the layer quality, an optical interference measurement method can be used (shown in FIG 3a ). The laser beam 24 a diode laser 23 with 670 nm wavelength, for which the ta-C layer material has only a small absorption coefficient, is at an angle of incidence of 60 degrees to an ablation position in a substrate 14 directed and both at the growing layer surface 25 as well as at the layer-substrate interface 26 reflected, with the reflected beam components 27a . 27b interfere. The periodic intensity fluctuations arising with increasing layer thickness are determined by means of a direction of reflection of the laser beam components 27a . 27b arranged photodetector 28 registered, evaluated as a measurement signal and used for control. The layer deposition rate and the layer thickness can be determined from the periodic course of the measurement signal that is periodic with decreasing amplitude. A periodic, almost cosinusoidal course of the measuring signal with continuously decreasing amplitude of intensity I with continuous increase in thickness of the growing layer 25 over the time t (representation in the 3b ) indicates a constant sp ³ bond fraction.

After the transport of the carrier 8th with the coated substrates 14 from the coating chamber 5 in the processing position of the sampling chamber 6 In another embodiment, without interruption of the vacuum, either a laser micro-structuring or a laser nano-structuring and / or a further reduction in the voltage of the deposited layers can take place by purely thermal tempering. If no further processing or after at least one of the listed edits is the Entnahmekam mer 6 ventilated and the carrier 8th with the coated substrates 14 to the unloading station 7 transported.

The laser nanostructuring of the ta-C layers to improve the tribological properties of the coated substrates 14 can be done, for example, by the generation of ripples surface structures by means of femtosecond or picosecond laser pulses in the focus method. In this case, the patterning laser beam with the aid of a lens and a scanner mirror system, the outside of the sampling chamber 6 are focused on the layer surface and focused in a line or spiral over the substrates in Strukturierungsposition 14 guided. The coupling of the patterning laser beam is effected by a lid on the removal chamber 6 Flanged coupling window made of quartz glass. With a focus radius of 2 to 10 microns, a track pitch of 20 to 50 microns and a laser beam fluence of several 100 to 2000 J / cm ² Ripples are generated with a period of 500 to 700 nm and trench depths of some 10 to 400 nm.

The stress reduction of the deposited layers by purely thermal annealing can be achieved by means of a planar annular radiant heater with the dimensions of the carrier 8th for simultaneous tempering of all substrates 14 on a carrier 8th respectively. The measurement of the layer temperature is advantageously carried out via a pyrometer. The annealing temperature is the maximum possible stress temperature of the substrates 14 , This is a maximum of 700 ° C. The annealing time is in the range of 10 to 30 minutes.

The lasers, the vacuum generating means, the ion beam or plasma generating means, the laser beam guiding, shaping, focusing and scanning means, the transport means for the at least one carrier 8th and all drives for the movements of the carrier 8th and the target holder 11 and the in situ control device are interconnected with a controller in the form of a data processing system.

In a further embodiment of the embodiment Carriers 8th as a disc ring with substrate holders for substrates 14 in the form of cylinders, prisms, cones, needles, balls or hollow cylinders, and other embodiments of the target holder 11 be used.

For coating, for example, drills and milling cutters as substrates 14 These are in the carrier 8th driven rotatably arranged.

The 4 and 5 show carrier and target arrangements for coating cylindrical workpieces as substrates 14 each in a schematic representation. For a continuous layer deposition, in a first embodiment, substrate holders 29 and thus the substrates arranged therein 14 in the tangential direction of the rotating carrier 8th attached by a predetermined angle of preferably 45 degrees inclined (representations of 4a and 4b in two views). In addition, the substrate holders 29 for rotation of these substrates 14 about its axis of symmetry with preferably in the carrier 8th integrated drives via a bevel gear 30 coupled (representation in the 4b ). In a second embodiment (shown in the 5 ) are the substrates 14 standing vertically in the carrier 8th arranged, the substrates 14 with their substrate holders 29 around its axis of symmetry and further preferably in each case five to seven substrate holders are set in rotation about a common center of symmetry. The target in ablation position 15 is inclined at a predetermined angle of preferably 45 degrees to the axes of symmetry of the substrates 14 arranged. The targets 15 be successively by rotation of the target holder 11 by an angle of 360 degrees divided by the number of targets 15 on the target holder 11 placed in the ablation position.

By the arrangements according to the 4 and 5 Ensures that the edges and surfaces of the substrates are inclined to each other 14 can be uniformly coated with a hard material layer of the same quality.

The 6 shows a carrier and a target arrangement for coating cutting slats as substrates 14 in a schematic representation.

The substrates 14 are located on substrate holders 29 , wherein the cutting slats as substrates 14 on different length substrate holders 29 are arranged at different heights. The substrate holder 29 are rotatably driven in the carrier 8th standing arranged, wherein each five substrate holders rotate about a common center of symmetry.

For a simultaneous layer deposition on the side surfaces and a top surface of the cutting battens, the targets are 15 preferably arranged at right angles to each other and there are two targets simultaneously 15 in ablation position. Two targets each 15 be successively by rotation of the target holder 11 by an angle of 360 degrees divided by the number of targets 15 on the target holder 11 placed in the ablation position. For a continuous layer deposition advantageously two target laser beams 12a . 12b used. To reduce the voltage of the deposited sublayers, two substrate laser beams are formed 13a . 13b used. This is one alternating layer deposition and stress reduction on a top surface and the at least one adjacent side surfaces of the cutting slats possible.

The 7 shows a carrier 8th for coating substrates 14 in the form of cylinders over a panel 31 in a schematic representation.

For coating substrates 14 in the form of cylinders, for example rollers for rolling bearings, these are substrate holders 29 preferably lying in several rows next to each other in the tangential direction polygonal along the circumference of the either continuously rotating or rotatable by a predetermined angle carrier 8th attached. For small cylinder lengths these are longer rods with Zwischenabstandshaltescheiben 33 Composed over flexible waves 34 connected to each other. The cylinders are with the substrate holders 29 rotatably mounted. The substrate holder 29 are for rotation of the cylinder about its axis of symmetry with preferably in the carrier 8th coupled with integrated drives. Between the target 15 and the cylinders in ablation position as substrates 14 is a blind 31 with the size of the cylinder adapted openings 32 arranged, which prevents the grazing incidence of ablated target particles on the cylinder jacket surfaces to be coated.

The 8th shows a carrier 8th for coating substrates 14 in the form of needles and balls in a schematic representation.

For coating substrates 14 as needles and balls, for example as rolling elements for bearings or of small diameter shafts, is the substrate holder 29 designed as a vibrating plate with side walls. The carrier 8th itself is a disc ring, with several substrate holders 29 on the carrier 8th are located. The vibrations in the substrate holders rotate 29 arranged substrates 14 as needles about their axis of symmetry and as spheres around their center of mass both during the layer deposition and during the stress reduction.

The 9 to 11 show carrier and target assemblies for inner coating of short hollow cylinders as substrates 14 in basic representations.

For internal coating of short hollow cylinders as substrates 14 For example, for the inner coating of the running surfaces of outer shells of rolling bearings, these are in a first embodiment on their substrate holder 29 in the tangential direction of the carrier 8th attached inclined by a predetermined angle of preferably 45 degrees. Furthermore, the substrate holders 29 for rotation of the substrates 14 about its axis of symmetry with preferably in the carrier 8th coupled with integrated drives. The 9a and 9b show such an arrangement in basic representations in two views.

In a second embodiment, the substrates 14 with their substrate holders 29 standing vertically on the carrier 8th arranged and used with their substrate holders 29 offset in rotation about its axis of symmetry. The target in ablation position 15 is inclined to the axes of symmetry of the substrates 14 arranged at a predetermined angle of preferably 45 degrees (shown in the 10 ).

In a third embodiment, the substrate holders 29 with the substrates 14 radially on the peripheral surface of the carrier 8th with their axes of symmetry perpendicular to the symmetry axis of the carrier 8th arranged and rotate about their symmetry axis (representation in the 11 ). The carrier 8th In the second and third embodiments, after deposition of a sublayer, each is divided by an angle of 360 degrees by the number of on the carrier 8th positioned substrates 14 turned to the next substrate 14 in the coating position and on the carrier 8th opposite arranged substrate 14 to move to the stress reduction position.

In the embodiments according to 9 to 11 becomes the substrate laser beam 13 for stress reduction with a rectangular cross-section, with the smallest possible angle of incidence on the coated surface of the substrate in the stress-reducing position 14 directed (not shown here).

To increase the Schichtabscheiderate is in the second and third embodiment each have a magnetic circuit with pole pieces 20 at a yoke 21 arranged (representations in the 10 and 11 ). The magnetic circuit consists of over the target located in Ablationsposition 15 and under the substrates in the coating position 14 arranged pole shoes 20 given geometry, via a yoke 21 of a magnetic material, preferably soft iron, with at least one current coil 22 connected to generate the magnetic field.

In these embodiments according to the representations of 9 to 11 becomes the substrate laser beam 13 for reducing stress with a rectangular cross-section at the smallest possible angle of incidence on the coated surface of the located in the voltage reduction position substrate 14 directed.

In further embodiments of the first embodiment, targets can also be used 15 be used in cylindrical form. These are on the target holder 11 rotatably mounted and located in Ablationsposition target 15 is by means of a in the target holder 11 integrated drive in rotation offset at a predetermined angular velocity. By linear scanning of the focused on the target surface target laser beam 12 parallel to the symmetry axis of the target 15 and the simultaneous target rotation, a uniform target ablation by laser ablation. The symmetry axis of the targets 15 in cylindrical form is preferably directed parallel to the substrate surface to be coated. On a target holder 11 as a target can the targets 15 lying as a cylinder radially symmetrical or polygonal in the tangential direction (representations in the 12 and 13 ).

In a further embodiment of the first embodiment, the targets are 15 in cylindrical form with their axes of symmetry parallel to the axis of symmetry of the rotatable target holder 11 on the target holder 11 arranged as a disc.

The 14 shows the arrangement of the carrier 8th and the targets 15 and substrates 14 in a schematic representation. With this embodiment of the device, for example, composite into rods substrates 14 be coated in a cylindrical shape, the radial-symmetrical at the periphery of the disc-shaped carrier 8th are arranged. The magnetic circuit is used for the magnetic field-supported concentration of the ionized target particle stream proportion on the substrates in the coating position 14 , The magnetic circuit consists of over the target located in Ablationsposition 15 and under the substrates in the coating position 14 arranged pole shoes 20 predetermined geometry, the at least one yoke 21 of a magnetic material, preferably soft iron, each having at least one current coil 22 connected to generate the magnetic field.

2nd embodiment

A device for productive laser pulse deposition (PLD) of cubic boron nitride layers (c-BN layers) on substrates 14 corresponds to the execution of the coating chamber 5 that of the first embodiment.

The 15 shows a cross section of the coating chamber for a device for laser pulse deposition (PLD) of cubic boron nitride (c-BN layers) on substrates in a schematic representation.

The coupling of the target laser beam 12 with a wavelength of 248 nm in the coating chamber 5 takes place by a high-vacuum-tight on an extended Einkoppelflansch 35 For example, on the lid of the coating chamber 5 is fixed, flanged coupling window 36 made of quartz glass. The coupling flange 35 of non-magnetic material is of at least one magnet coil arrangement 37 surround. The field lines of this magnet coil arrangement 37 generated rotationally symmetric magnetic fields preferably extend to the inner walls of the coupling flange 35 and not to the coupling window 36 , so that in the direction of the coupling window 36 ablated ionized target particle stream share the coupling window 36 almost not reached and its assignment with target material thus reduced or avoided.

For deposition of c-BN layers are on the target holder 11 five targets 15 of pyrolytic hexagonal boron nitride and a target 15 made of boron or tungsten carbide. The target 15 Boron or tungsten carbide is used for the PLD deposition of an adhesion-promoting intermediate layer on the substrates 14 , whose total layer thickness depends on the surface roughness of the substrates 14 in the range of 30 nm to 250 nm.

To increase the adhesion of the intermediate layers on the substrate 14 and the c-BN layers on the intermediate layers, as well as for nucleation and formation of the c-BN layer phase become the surfaces of the substrates in the coating position 14 before coating with argon ion beams and after the PLD deposition of the intermediate layer, the surface of the respective growing boron nitride sub-layer is irradiated with argon / nitrogen ion beams as substrate beams in a mixing ratio of preferably 1: 1 to 2: 1.

The for generating the ion beams 39 in the coating chamber 5 arranged ion beam station 38 consists of one on the lid of the coating chamber 5 high vacuum-tight flanged ion source as a substrate source and an electron source for charge compensation of the ion beam 39 as a substrate beam and outside the coating chamber 5 arranged energy, gas supply and cooling units for the operation of the ion beam station 38 , The Ar / N ₂ ion irradiation of the growing BN layer additionally supplies energy for the c-BN nucleation and the c-BN layer formation process and the c-BN stoichiometry is set in a targeted manner.

For the magnetic field-based concentration of the ionized target particle stream fraction in the coating position on the carrier 8th are located the substrates 14 and reducing to avoid incorporation of BN target ablated hexagonal particulates into the growing layer by utilizing only the ablated ionized atomic particle stream for film formation is the target in ablation position 15 and the substrates in the coating position 14 offset from each other and arranged inclined to each other. The predetermined angle between the mid-perpendiculars is at least 90 degrees. Between the target 15 and the substrates 14 a ring-sector-shaped magnetic field is generated whose field lines run perpendicularly from the target surface to perpendicular to the substrate surface. The generation of the magnetic fields by means of directly in front of the target 15 and immediately before the substrates 14 arranged hollow cylindrical solenoid coils 40 and between Target 15 and substrates 14 arcuate arranged thoro-sector-shaped magnetic coils 41 and additionally by means of a magnetic circuit whose pole shoes 20 at the yoke 21 with the current coil 22 behind the target 15 and behind the substrates 14 are arranged. Through these arrangements of Target 15 and substrate 14 to each other, by the coil arrangement and the choice of the coil inside diameter ensures that the ablated target surface of the substrate surface to be coated from geometrically-optically not visible, so especially the particulate matter with multiple atomic mass not on the substrates 14 reach. To avoid wall reflections from the target 15 ablated particles towards the substrate 14 are at the as the inner bobbin of the magnetic coils 41 serving pipes sequentially annular ribs attached.

For the generation of the substrate laser beam 13 For the laser-induced reduction of the voltages of the deposited c-BN sublayers, a fluorine laser with a wavelength of 157 nm is used. The transparent coupling window for this wavelength 42 for the substrate laser beam 13 consists of calcium fluoride (CaF ₂ ).

• – Laserpulsenergie auf dem Target 600 mJ,
• – Laserstrahlfluenz auf dem Target 20 bis 40 J/cm²,
• – Fokusquerschnitt auf dem Target 1,5 bis 3 mm²,
• – Pulswiederholfrequenz für die c-BN Nukleation 10 bis 30 Hz,
• – Pulswiederholfrequenz für das weitere c-BN Schichtwachstum 50 Hz.

The following are typical parameters for the deposition of c-BN layers on flat substrates with the device after 1 and 4 at a mean target-substrate distance of 200 mm when using a magnetic field according to 2 indicated with a magnetic flux density of 250 millitesla:
Use of KrF lasers to generate the target laser beam

• - laser pulse energy on the target 600 mJ,
• Laser beam fluence on the target 20 to 40 J / cm ² ,
• Focus cross section on the target 1.5 to 3 mm ² ,
• - pulse repetition frequency for c-BN nucleation 10 to 30 Hz,
• - Pulse repetition frequency for further c-BN layer growth 50 Hz.

• – Arbeitsgasgemisch Ar/N₂ im Verhältnis 2:1,
• – Ionnenergie 700 eV,
• – Ionenstromdichte für die c-BN Nukleation und
• – für das weitere c-BN Wachstum 570 μA/cm².

Use of a high frequency ion source to generate the substrate beam

• Working gas mixture Ar / N ₂ in the ratio 2: 1,
• - ion energy 700 eV,
• - Ion current density for c-BN nucleation and
• For the further c-BN growth 570 μA / cm ² .

• – Laserpulsenergie auf der Schicht 8,5 bis 15 mJ,
• – Pulswiederholfrequenz 200 Hz,
• – Laserstrahlfluenz auf dem Substrat 75 bis 130 mJ/cm²,
• – Fokusquerschnitt auf dem Substrat 12 mm², Schichtabscheiderate bei unbewegtem Substrat 45 nm/min, Dickeninhomogenität bei bewegtem Substrat kleiner 5%, Subschichtdicke 50 bis 150 nm,

beschichtbare Fläche pro Stunde mit einer 1 μm dicken c-BN Schicht ca. 100 cm².Use of a fluorine laser for generating the substrate laser beam

• Laser pulse energy on the layer 8.5 to 15 mJ,
• - pulse repetition frequency 200 Hz,
• Laser beam fluence on the substrate 75 to 130 mJ / cm ² ,
• - focus cross-section on the substrate 12 mm ² , Schichtabscheiderate with unmoved substrate 45 nm / min, thickness inhomogeneity with moving substrate less than 5%, sub-layer thickness 50 to 150 nm,

coatable surface per hour with a 1 μm thick c-BN layer approx. 100 cm ² .

3rd embodiment

The 16 shows a device for laser pulse deposition (PLD) of ta-C layers on the outer surface of larger substrates in a cylindrical shape, for example, of cylindrical bodies with lengths up to several 10 cm and diameters of a few cm to a few 10 cm in a schematic representation.

The device essentially corresponds to that of the first embodiment. The carrier 8th for receiving and transporting preferably two substrates 14 in cylindrical form or of two cylinders composed of roller rings as substrates 14 is a frame in which the substrates 14 rotatably mounted and by means of a preferably in the carrier 8th integrated drive in rotation at a predetermined angular velocity to be offset about its axis of symmetry.

The pretreatment of the substrate 14 by ion beam exposure in the feed / pretreatment chamber 4 takes place by means of an ion source 9 either a band-shaped ion beam over the entire length of a substrate 14 or by means of a built-in ion source with a circular ion beam cross section, which by means of a displacement device parallel to the axis of symmetry of the rotating substrate 14 is scanned.

In the coating chamber 5 are consecutively in the transport direction of the carrier 8th a first stop 43 for voltage reduction, a target station 44 and a second station 45 arranged for voltage reduction. This is guaranteed does that at the same time on a substrate 14 one sub-layer deposited and on the other substrate 14 the tension of the previously deposited sub-layer is reduced. On the target holder 11 are at least three targets 15 rotatable in cylindrical form and parallel to the substrate in the coating position 14 stored. The target in ablation position 15 is by means of a preferably in the target holder 11 integrated drive in rotations offset at a predetermined angular velocity.

By linear scanning of the focused on the target surface target laser beam 12 parallel to the axis of symmetry of the target in ablation position 15 and the simultaneous target rotation is a uniform target removal by laser ablation and thus a homogeneous coating of the opposite rotating substrate 14 , Between the target 15 and the ablation position substrate 14 is a panel with one of the size of the substrate 14 adapted opening, which is the grazing incidence of ablated target particles on the coated surface of the substrate 14 prevented. In the presentation of the 16 this aperture is not shown.

By turning the target holder 11 by an angle of 360 degrees divided by the number of arranged targets 15 becomes the respective target 15 positioned in the ablation position. In the present embodiment are on the target holder 11 two targets 15 of pyrolytic graphite and a target 15 made of boron or tungsten carbide. The target 15 Boron or tungsten carbide is used for the PLD deposition of an adhesion-promoting intermediate layer on the substrates 14 ,

To reduce the voltage of the just deposited sub-layer is in Beschich processing position befindende substrate 14 by moving the carrier 8th in the first or second station 43 . 45 brought to the voltage reduction. By linear scanning of the substrate laser beam directed onto the substrate surface 13 with preferably rectangular cross-section parallel to the axis of symmetry of the substrate 14 and the simultaneous substrate rotation, a uniform reduction in the voltage of the deposited sublayer.

In one embodiment of the third embodiment, in the removal chamber 6 a laser micro or laser nano-structuring and / or a further reduction in the voltage of the deposited layers by purely thermal annealing.

4th embodiment

The 17 shows a device for laser pulse deposition (PLD) of ta-C layers on substrates with a flat rectangular shape in a schematic representation. The device essentially corresponds to that of the first embodiment. In addition, the ion source 9 , the first station 43 for voltage reduction, the target station 44 including the target holder 11 and the second station 45 realized for voltage reduction of the third embodiment.

On the carrier 8th are preferably two substrate holders 29 each positioned as a plate. To a homogeneous pre-treatment of the substrates 14 ensure the substrate holder 29 in the feed / pretreatment chamber 4 by controlled displacement of the carrier 8th perpendicular to the ion beam of the ion source 9 as a broadband ion source or perpendicular to the scanning direction of the ion source 9 moved with circular ion beam cross section. In order to ensure a homogeneous layer deposition and a homogeneous stress reduction, takes place in the coating chamber 5 an additional controlled movement of the carrier 8th with the substrates 14 perpendicular to the scanning direction of the target laser beam 12 and the substrate laser beam 13 , Between the target 15 and the ablation position substrate 14 a shutter with a fitted opening is attached, which is the grazing incidence of ablated target particles on the substrate to be coated 14 prevented. The aperture is in the representation of 17 Not shown.

In the embodiments 1 to 4 also targets 15 be used as a rectangular plate. This is the target holder 11 formed prism-shaped and the targets 15 are attached to the lateral surfaces.

The 18 shows a target holder 11 for targets 15 with a rectangular plate shape in a schematic representation.

For rotation of the respective target 15 in the ablation position by means of an existing drive is the target holder 11 Gradually divide its symmetry axis by angles of 360 degrees divided by the number of targets 15 occupied prism shell surfaces rotatably formed. In order to allow a uniform target removal over the entire target area, the target laser beam 12 Two-dimensional planar, for example, circular and linear progressively as a meander or adjacent bands, scanned over the target surface.

In a further embodiment of the embodiments 4 and 5, the substrates can 14 on a carrier 8th in prismatic form.

The 19 shows such a carrier 8th in prismatic form with substrates 14 in a schematic representation.

To rotate the example on substrate holders 29 attached substrates 14 in the pretreatment position as well as in the coating and stress reduction position is the carrier 8th by means of a drive about its axis of symmetry, preferably parallel to the target surface, gradually by 360 degrees divided by the number of substrates 14 occupied prism shell surfaces rotatable. The carrier 8th Further, it becomes perpendicular to the scanning direction of the ion beam in the charging / pretreatment chamber 4 and the target laser beam 12 and the substrate laser beam 13 in the coating chamber 5 controlled by a transport device moved to a homogeneous pretreatment of the substrates 14 and to ensure a homogeneous layer deposition and a homogeneous stress reduction. Between the target 15 and the ablation position substrates 14 In addition, an aperture with a suitable opening may be attached, which is the grazing incidence of ablated target particles on the substrates to be coated 14 prevented.

In a further embodiment of the device, the target 15 in cylindrical form also in the interior of the substrate 14 be arranged. The substrate 14 is, for example, a hollow cylinder whose inner surface is to be provided with a layer to be deposited.

The 20 shows an arrangement for internal coating of hollow cylindrical bodies as substrates 14 larger dimensions in a schematic representation.

The targets 15 in cylindrical form are on the target holder 11 rotatably mounted. The target to be ablated 15 is by means of a in the target holder 11 integrated drive axially and parallel to the axis of symmetry of the substrate 14 moved to the ablation position and rotated in rotation at a predetermined angular velocity. By linear scanning of the focused on the target surface target laser beam 12 parallel to the symmetry axis of the target 15 and the simultaneous target rotation, a uniform target ablation by laser ablation. By simultaneous rotation of the on the rotatable substrate holder 29 attached substrate 14 about its axis of symmetry with given angular velocity and controlled axial relative movement between target 15 and substrate 14 Layers are deposited with a homogeneous thickness or with a predetermined thickness gradient in the axial direction. The substrate laser beam 13 for stress reduction of the just deposited sub-layer can simultaneously on the, in the coating position located substrate surface, opposite coated inner surface of the substrate 14 be directed. The hollow cylindrical, on the rotatable substrate holder 29 attached substrates 14 For example, they may be positioned on a disc-shaped carrier according to Embodiment 1 or a carrier formed as a frame according to Embodiments 4 and 5.

In a further embodiment of the device, the target 15 as a hollow cylinder and the substrate 14 surround. By arranging multiple targets 15 at a given distance and use of multiple target 12 and substrate laser beams 13 can thus advantageously long substrates 14 be coated.

The 21 shows a carrier, substrate and target arrangement for coating lateral surfaces of substrates 14 as a long cylinder in a schematic representation. The substrate 14 is rotatably mounted and axially displaceable. The targets 15 as hollow cylinders are successively at a predetermined distance with their axes of symmetry parallel to each other and parallel to the axis of symmetry of the substrate 14 arranged and surround the substrate 14 preferably radially symmetrical. Every target 15 is by means of one in the suspension 46 of the target holder 11 integrated drive in rotations offset at a predetermined angular velocity. By linear scanning of the focused on the target surface target laser beam 12 parallel to the symmetry axis of the target 15 and the simultaneous target rotation, a uniform removal of the target inner surface by laser ablation. By simultaneous rotation of the substrate 14 about its axis of symmetry with given angular velocity and controlled axial back and forth displacement of the substrate 14 relative to the targets 15 Layers are deposited with a homogeneous thickness or with a predetermined thickness gradient in the axial direction. The substrate laser beams 13 to reduce stress before, between and after the target holders 11 on the surface of the substrate 14 directed, so that during the controlled axial back and forth displacement of the substrate 14 in sections, an alternating deposition of sublayers and subsequent voltage reduction takes place.

The Devices of the embodiments can also for productive laser pulse deposition (PLD) of cubic boron nitride layers (c-BN layers) be used on substrates, if in place of the targets of graphite Targets of hexagonal boron nitride are used during and the Schichtabscheideprozesses simultaneously a substrate beam, which at least proportionally contains nitrogen ions to which growing layer surface is directed.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• DE 4417114 A1 [0002]
• - DE 20120783 U1 [0003]

Claims (33)

A device for laser pulse deposition (PLD) of layers, preferably of diamond-like carbon layers (DLC layers) with predominantly tetrahedral bonds (ta-C layers) and cubic boron nitride layers (c-BN layers), on substrates with means for generating vacuum, with at least one device for Ion beam or plasma generation, comprising lasers with devices for guiding, shaping, focusing and scanning laser beams and with at least one transport device for at least one carrier, characterized in that in each case at least one charging / pretreatment chamber ( 4 ), a coating chamber ( 5 ) and a removal chamber ( 6 ) arranged one after the other, in each case separately evacuatable via a device for generating a vacuum, as well as separately ventilated and by vacuum locks ( 10 ) are separated from each other so that in each case at least one carrier ( 8th ) with at least one substrate holder ( 29 ) for receiving at least one substrate ( 14 ) by means of the transport device with open vacuum lock ( 10 ) is movable from chamber to chamber that in the loading / pretreatment chamber ( 4 ) either at least one ion source ( 9 ) for ion beam pretreatment of the substrate ( 14 ) or at least one device for generating a plasma for plasma pretreatment of the substrate ( 14 ) is arranged such that at least one target station ( 44 ) consisting of at least one target holder ( 11 ) with at least one target ( 15 ) at a given distance to those on the carrier ( 8th ) in the coating position of the substrate ( 14 ) in the coating chamber ( 5 ) and at least one laser ( 1 ) with devices for guiding, shaping, focusing and scanning the laser beam as a target laser beam ( 12 ) outside the coating chamber ( 5 ) as well as a device for coupling the target laser beam ( 12 ) in the coating chamber ( 5 ) is arranged so that the target laser beam ( 12 ) on the target in ablation position ( 15 ), whereby the target laser beam ( 12 ) is directed onto the target surface at a predetermined angle of incidence of less than 70 degrees, and the target located in ablation position (FIG. 15 ) and located on the carrier ( 8th ) in the coating position of the substrate ( 14 ) are arranged relative to one another and are moved relative to one another in such a way that that of the target ( 15 ) ablated, layer-forming particle stream perpendicular or largely perpendicularly, but not at an angle of incidence of greater than 60 degrees, impinges on the respective substrate or growing layer surface and deposited sub-layers of homogeneous and predetermined thickness or with a predetermined lateral Dickengradienten that at least one voltage reduction station for laser-induced reduction of the stresses of deposited sub-layers of predetermined thickness on the voltage reduction position on the carrier ( 8th ) ( 14 ) in the coating chamber ( 5 ) consisting of at least one laser ( 2 ) with devices for guiding, shaping, focusing and scanning the laser beam as a substrate laser beam ( 13 ) outside the coating chamber ( 5 ) and a device for coupling the substrate laser beam ( 13 ) in the coating chamber ( 5 ) is arranged so that the substrate laser beam ( 13 ) with a predetermined cross-section on the surface of the coated substrate ( 14 ), which is on the carrier ( 8th ) in stress-reducing position substrate ( 14 ) and the substrate ( 14 ) as well as the substrate laser beam ( 13 ) are moved relative to each other such that the internal stresses of sublayers of predetermined thickness over the entire sublayer area and the entire sublayer thickness are reduced homogeneously or with a predetermined gradient laterally across the sublayer area and over the sublayer thickness such that the deposition of sublayers and the stress reduction of sublayers alternately until reaching the predetermined total layer thickness, and that the components of the device are coupled to a data processing system, so that the transport of the carrier ( 8th ) and a predetermined variation of all parameters for the pretreatment, controlled for the coating and the voltage reduction process takes place. Device according to claim 1, characterized in that the carrier ( 8th ) as a carrier of the at least one substrate holder ( 29 ) and the at least one substrate ( 14 ) has the shape of a disc, a disc ring, a plate, a frame or a prism and that the carrier ( 8th ) at least in the coating chamber ( 5 ) for realizing a predetermined lateral relative movement of the substrate ( 14 ) preferably parallel to the surface of the target in ablation position ( 15 ) is coupled to at least one drive. Device according to claim 1 or 2, characterized in that the carrier ( 8th ) is formed as a disk or disc ring and coupled to realize either a continuous rotation with predetermined angular velocity or stepwise rotation by predetermined angle about its axis of symmetry with at least one further drive. Device according to claim 1 or 2, characterized in that the carrier ( 8th ) as Pris ma is arranged and coupled to a drive so that this about its preferably parallel to the target surface directed symmetry axis gradually by predetermined angle corresponding to the number of substrates ( 14 ) occupied prism shell surfaces is rotatable. Device according to claim 2, characterized in that in the carrier ( 8th ) at least one movement device for the substrate holder ( 29 ) is integrated so that the substrate ( 14 ) is rotated about its axis of symmetry or about its center of symmetry at a predetermined angular velocity and / or is inclined cyclically over a predetermined angular range to the target surface. Device according to claim 1, characterized in that the target holder ( 11 ) is disc-shaped or disc-ring-shaped and a plurality of circularly arranged target holders for receiving and for cooling or heating of preferably disc-shaped targets ( 15 ) or of radial or tangential on the target holder ( 11 ) ( 15 ) in cylindrical form of a target material or various target materials and a device for stepwise rotation of the target holder ( 11 ) about its axis of symmetry by predetermined angles corresponding to the number of targets ( 15 ) owns. Device according to claim 6, characterized in that the target holder ( 11 ) at least one device for rotating the target located in the ablation position ( 15 ) has about its axis of symmetry at a predetermined angular velocity. Device according to claim 1, characterized in that the target holder ( 11 ) or at least individual target holders of the target holder ( 11 ) are formed such that the target surface of the target located in ablation position ( 15 ) parallel or at a predetermined adjustable angle to the surface of the substrate in the coating position ( 14 ). Device according to claim 1, characterized in that a target holder ( 11 ) or multiple target holders ( 11 ), preferably rotationally symmetrical and prismatic arranged target holder, for receiving and for cooling or heating of targets consisting of a target material ( 15 ) in cylindrical form or of targets ( 15 ) in a cylindrical shape composed of a plurality of segments of different target materials and at least one device for rotating at least the target in ablation position (US Pat. 15 ) are at predetermined angular velocity about its axis of symmetry components of the target station. Device according to claim 9, characterized in that the device for rotation with in each case a device for predetermined displacement of the target segments parallel to the axis of symmetry of the respective target ( 15 ) is provided in the ablation position. Device according to claim 1, characterized in that the target holder ( 11 ) is formed prism-shaped, that the target holder ( 11 ) prism envelope surface arranged target holders for receiving and for cooling or heating of targets ( 15 ) as flat plates and that the target holder ( 11 ) rotatable in steps by predetermined angle corresponding to the number of target holders and for realizing a predetermined relative movement between the target located in the ablation position ( 15 ) and the substrate in the coating position ( 14 ) is displaced laterally and preferably parallel relative to the substrate surface controlled. Device according to Patent Claim 1, characterized in that at least one protective screen is provided for at least one target not in ablation position ( 15 ) and at least one non-coating position substrate ( 14 ) in the coating chamber ( 5 ) is arranged. Device according to claim 1, characterized in that the device for coupling the target laser beam ( 12 ) on the target in ablation position ( 15 ) from a on a coupling flange ( 35 ) high vacuum-tight flanged coupling window ( 36 ) of one for the wavelength of the target laser beam ( 12 ) transparent material, wherein the Einkoppelflanschquerschnitt and the coupling window ( 36 ) are sized so that the target laser beam ( 12 ) over the entire surface of the target in ablation position ( 15 ) is scanned either linearly at a constant speed or at a predetermined varied speed or two-dimensionally arealwise and that the symmetry axis of the coupling flange ( 35 ) is inclined at a predetermined angle to the target surface or tiltable by bellows spacer at a plurality of predetermined angles to the target surface. Device according to claim 1 and 13, characterized in that to reduce the occupancy of the inner surface of the coupling window ( 36 ) for the target laser beam ( 12 ) with ablated target material, the length of the Einkoppelflansches ( 35 ), observing the required focal length of the outside of the coating chamber mer ( 5 ) arranged lens ( 18 ) for focusing the target laser beam ( 12 ) on the target ( 15 ) is as long as possible and / or between the target in ablation position ( 15 ) and the coupling window ( 36 ) one synchronously with the target laser beam scan and perpendicular to the target laser beam ( 12 ) movable, only the laser beam cross-section releasing aperture ( 31 ) and / or magnetic field generating arrangements for deflecting the ablated, ionized target particle stream component from the window inner surface. Device according to claim 1, characterized in that the device for coupling the substrate laser beam ( 13 ) having a predetermined cross section on the layer surface of the substrate in the expansion position ( 14 ) from a highly vacuum-tight flanged window of one for the wavelength of the substrate laser beam ( 13 transparent material sized, shaped and arranged so that the substrate laser beam ( 13 ) during the relative movement between the substrate laser beam ( 13 ) and the surface of the substrate in the relaxation position ( 14 ), preferably by movement of the carrier ( 8th ) and / or the substrate ( 14 ) and / or by scanning the substrate laser beam ( 13 ) is directed over the layer surface, either perpendicular or at a predetermined variable angle to the layer surface. Device according to claim 1, characterized in that both in and / or outside the coating chamber ( 5 ) Constituents of at least one of the in situ measuring devices for determining the pulse energy, the fluence and the fluence distribution of the target ( 12 ) and the substrate laser beam ( 13 ), for determining the layer deposition rate and the layer thickness, for determining the layer tension, for determining the substrate and layer surface temperature and for determining the target surface temperature and for assessing the layer quality are arranged and that the in situ measuring device is connected to the data processing system. Device according to claim 16, characterized that for in situ control of the pulse energy, the fluence and the fluence distribution of laser beams laser power and laser pulse energy meters As well as laser beam profilometer and that for in situ control of Schichtabscheiderate, the layer thickness, the thickness of the respective deposited sublayer and the layer quality in situ ellipsometer are arranged. Device according to claim 16, characterized in that an optical interference measuring device is arranged so that the laser beam ( 24 ), preferably a diode laser ( 23 ), which is only slightly absorbed by the layer material, is directed onto the growing layer at a predetermined angle of incidence, different from zero degrees, and at both the growing layer surface ( 25 ) as well as at the layer-substrate interface ( 26 ) is reflected, wherein the reflected beam portions ( 27 ) and the periodic intensity fluctuations arising with increasing layer thickness with the aid of a reflection direction of the laser beam ( 24 ) arranged photodetector ( 28 ) and sent as a measurement signal to the data processing system. Device according to claim 16, characterized that for in situ measurement of the target, substrate and layer surface temperature preferably Pyrometer are arranged. Device according to claim 16, characterized in that for the in situ determination of the layer stress during the coating process and for the control of the voltage reduction during the voltage reduction processes on the carrier ( 8th ) near a substrate ( 14 ), a cantilever fastened only at one end is mounted, whose increasing radius of bending during the coating process with increasing thickness of the growing sublayers, and again decreasing radius of deflection during the stress reduction process of this sublayer, is determined and evaluated. Device according to claim 1, characterized in that in the coating chamber ( 5 ) at least one ion beam station for ion irradiation of the preferably located in or immediately adjacent to the coating position substrate ( 14 ) and the surface of the respective growing or newly deposited super-thin layer with ion beams (substrate beams) of predetermined mass, charge, energy and ion current density is arranged. Device according to claim 21, characterized in that the ion beam station is flanged from a high-vacuum-tight or into the coating chamber ( 5 ) built-in ion source ( 9 ) and an electron source for charge compensation and an energy, gas supply and cooling unit, wherein the ion beam composition, the ion energy and the ion current density of the on the substrate ( 14 ) and optionally on the growing or just deposited super thin layer impinging ion beam is preset or varied and that the transition from the ion irradiation of the substrate surface for layer deposition and selective ion irradiation of the growing layer continuously without temporal Unterbre tion and without interruption of the vacuum. Device according to claim 1, characterized in that between the target located in the ablation position ( 15 ) and the substrate in the coating position ( 14 ) Magnetic fields are present whose magnetic field lines preferably perpendicular to the just ablated surface of the target ( 15 ) to perpendicular to the just coated surface of the substrate ( 14 ), whereby the target ( 15 ) and the substrate ( 14 ) are arranged opposite one another with parallel or mutually inclined at a predetermined angle mid-perpendicular or inclined and mutually offset with a predetermined angle between the bisectors of at least 90 degrees. Device according to claim 23, characterized in that behind the target ( 15 ) and behind the substrate ( 14 ) Pole shoes ( 20 ) are arranged and that the pole pieces ( 20 ) via at least one in the coating chamber ( 5 ) or through the walls of the coating chamber ( 5 ) high-vacuum-tight magnetic yoke ( 21 ) with at least one current coil ( 22 ) such that the generation of the magnetic field for concentration of the ionized target particle stream fraction on the substrate in the coating position ( 14 ) and to increase the degree of ionization in the ablated target particle stream in the opposite arrangement of the target located in the ablation position ( 15 ) and the substrate ( 14 ) takes place by means of a magnetic circuit. Device according to claim 23, characterized in that for generating the magnetic field immediately in front of the target ( 15 ) as well as directly in front of the substrate ( 14 ) and between Target ( 15 ) and substrate ( 14 ) Magnet coils or in the axial direction magnetized annular permanent magnets are arranged. Device according to claim 23, characterized in that magnetic coils and / or annular permanent magnets magnetized in the axial direction are arranged such that for additional reduction to avoid the incorporation of ablated particulates in the growing layer in mutually offset and inclined arrangement of target ( 15 ) and substrate ( 14 ) with a predetermined angle between the mid-perpendicular of the straight ablated target surface and the substrate surface to be coated of at least 90 degrees, a preferably annular sector-shaped magnetic field between the target ( 15 ) and the substrate ( 14 ) is available. Device according to claim 23, characterized in that magnetic coils and / or axially magnetized annular permanent magnets are arranged so that for additional reduction to avoid the installation of deposited particulates in the growing layer at opposite and preferably inclined arrangement of target ( 15 ) and substrate ( 14 ) a magnetic field in the form of at least part of a sinusoidal torus between the target ( 15 ) and the substrate ( 14 ) is available. Device according to claim 1, characterized in that between the target ( 15 ) and the substrate ( 14 ) at least one aperture ( 31 ) is arranged with predetermined opening geometry and is moved so that the of the target ( 15 ) ablated, layer-forming particle flow as perpendicular as possible but not at an angle of incidence of greater than 60 degrees incident on the respective substrate or growing layer surface and layers are deposited with a homogeneous thickness or with a predetermined lateral Dickengradienten. Device according to claim 1, characterized in that the removal chamber ( 6 ) with a surface structuring station for laser micro and / or laser nanostructuring of at least the deposited layers on the coated substrate in the structuring position (US Pat. 14 ) is equipped by means of focus or mask projection method. Device according to claim 29, characterized in that the surface structuring station from outside the extraction chamber ( 6 ) arranged at least one laser and means for guiding, shaping and focusing and focus tracking or mask image plane tracking of the laser beam and to realize a relative movement between the laser beam and substrate surface and means for coupling this laser beam as structuring laser beam with a predetermined focus or mask image cross-section on the layer surface and at least one in situ position measuring and adjusting device for the substrate in the structuring position ( 14 ) and means for measuring and adjusting and tracking the focus position or the mask image plane of the structuring laser beam is relatively and perpendicular to the layer surface. Device according to claim 1, characterized in that the removal chamber ( 6 ) has at least one station for stress reduction of the deposited layers by thermal annealing. Device according to claim 31, characterized in that the station for Span tion reduction of the deposited layers by thermal annealing consists of a radiant heater. Device according to claim 1, characterized in that the charging / pretreatment chamber ( 4 ), the coating chamber ( 5 ) and the removal chamber ( 6 ) to accommodate multiple carriers ( 8th ) and, correspondingly, the charging / pretreatment chamber ( 4 ) for the use of multiple ion sources ( 9 ) or devices for generating a plasma, the coating chamber ( 5 ) are characterized by the use of multiple target stations, multiple voltage reduction stations and all power supply units and the control units for an automatic process flow by a modular structure and thus expandable.