WO2008094464A3 - Thick pseudomorphic nitride epitaxial layers - Google Patents

Thick pseudomorphic nitride epitaxial layers Download PDF

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Publication number
WO2008094464A3
WO2008094464A3 PCT/US2008/001003 US2008001003W WO2008094464A3 WO 2008094464 A3 WO2008094464 A3 WO 2008094464A3 US 2008001003 W US2008001003 W US 2008001003W WO 2008094464 A3 WO2008094464 A3 WO 2008094464A3
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WO
WIPO (PCT)
Prior art keywords
epitaxial layers
nitride epitaxial
pseudomorphic
thick
thick pseudomorphic
Prior art date
Application number
PCT/US2008/001003
Other languages
French (fr)
Other versions
WO2008094464A2 (en
Inventor
Leo J Schowalter
Joseph A Smart
James R Grandusky
Shiwen Liu
Original Assignee
Crystal Is Inc
Leo J Schowalter
Joseph A Smart
James R Grandusky
Shiwen Liu
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39473776&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2008094464(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Crystal Is Inc, Leo J Schowalter, Joseph A Smart, James R Grandusky, Shiwen Liu filed Critical Crystal Is Inc
Priority to JP2009547307A priority Critical patent/JP5730484B2/en
Priority to CN2008800030029A priority patent/CN101652832B/en
Publication of WO2008094464A2 publication Critical patent/WO2008094464A2/en
Publication of WO2008094464A3 publication Critical patent/WO2008094464A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
PCT/US2008/001003 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers WO2008094464A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009547307A JP5730484B2 (en) 2007-01-26 2008-01-25 Thick pseudo-lattice matched nitride epitaxial layer
CN2008800030029A CN101652832B (en) 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89757207P 2007-01-26 2007-01-26
US60/897,572 2007-01-26

Publications (2)

Publication Number Publication Date
WO2008094464A2 WO2008094464A2 (en) 2008-08-07
WO2008094464A3 true WO2008094464A3 (en) 2008-10-09

Family

ID=39473776

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/001003 WO2008094464A2 (en) 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers

Country Status (4)

Country Link
US (1) US9437430B2 (en)
JP (2) JP5730484B2 (en)
CN (1) CN101652832B (en)
WO (1) WO2008094464A2 (en)

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