WO2008094464A3 - Thick pseudomorphic nitride epitaxial layers - Google Patents

Thick pseudomorphic nitride epitaxial layers Download PDF

Info

Publication number
WO2008094464A3
WO2008094464A3 PCT/US2008/001003 US2008001003W WO2008094464A3 WO 2008094464 A3 WO2008094464 A3 WO 2008094464A3 US 2008001003 W US2008001003 W US 2008001003W WO 2008094464 A3 WO2008094464 A3 WO 2008094464A3
Authority
WO
WIPO (PCT)
Prior art keywords
epitaxial layers
nitride epitaxial
pseudomorphic
thick
thick pseudomorphic
Prior art date
Application number
PCT/US2008/001003
Other languages
French (fr)
Other versions
WO2008094464A2 (en
Inventor
Leo J Schowalter
Joseph A Smart
James R Grandusky
Shiwen Liu
Original Assignee
Crystal Is Inc
Leo J Schowalter
Joseph A Smart
James R Grandusky
Shiwen Liu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39473776&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2008094464(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Crystal Is Inc, Leo J Schowalter, Joseph A Smart, James R Grandusky, Shiwen Liu filed Critical Crystal Is Inc
Priority to JP2009547307A priority Critical patent/JP5730484B2/en
Priority to CN2008800030029A priority patent/CN101652832B/en
Publication of WO2008094464A2 publication Critical patent/WO2008094464A2/en
Publication of WO2008094464A3 publication Critical patent/WO2008094464A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
PCT/US2008/001003 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers WO2008094464A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009547307A JP5730484B2 (en) 2007-01-26 2008-01-25 Thick pseudo-lattice matched nitride epitaxial layer
CN2008800030029A CN101652832B (en) 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89757207P 2007-01-26 2007-01-26
US60/897,572 2007-01-26

Publications (2)

Publication Number Publication Date
WO2008094464A2 WO2008094464A2 (en) 2008-08-07
WO2008094464A3 true WO2008094464A3 (en) 2008-10-09

Family

ID=39473776

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/001003 WO2008094464A2 (en) 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers

Country Status (4)

Country Link
US (1) US9437430B2 (en)
JP (2) JP5730484B2 (en)
CN (1) CN101652832B (en)
WO (1) WO2008094464A2 (en)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
EP1885918B1 (en) * 2005-05-11 2017-01-25 North Carolina State University Methods of preparing controlled polarity group iii-nitride films
CN101331249B (en) 2005-12-02 2012-12-19 晶体公司 Doped aluminum nitride crystals and methods of making them
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP5479888B2 (en) 2006-03-30 2014-04-23 クリスタル アイエス インコーポレイテッド Method for controllably doping aluminum nitride bulk crystals
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
JP5730484B2 (en) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド Thick pseudo-lattice matched nitride epitaxial layer
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US20080277686A1 (en) * 2007-05-08 2008-11-13 Huga Optotech Inc. Light emitting device and method for making the same
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US20090250626A1 (en) * 2008-04-04 2009-10-08 Hexatech, Inc. Liquid sanitization device
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
JP2011071356A (en) * 2009-09-26 2011-04-07 Sanken Electric Co Ltd Semiconductor device
JP5972798B2 (en) * 2010-03-04 2016-08-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Semipolar III-nitride optoelectronic device on M-plane substrate with miscut less than +/− 15 degrees in C direction
US10472229B2 (en) 2010-03-05 2019-11-12 Cornell University—Cornell Center for Technology Monocrystalline epitaxially aligned nanostructures and related methods
TWI442455B (en) * 2010-03-29 2014-06-21 Soitec Silicon On Insulator Iii-v semiconductor structures and methods for forming the same
CN103038400B (en) 2010-06-30 2016-06-22 晶体公司 Use the growth of the bulk aluminum nitride single crystal of thermal gradient control
JP5319628B2 (en) * 2010-08-26 2013-10-16 シャープ株式会社 Nitride semiconductor element and semiconductor optical device
CN102140680A (en) * 2011-05-10 2011-08-03 青岛铝镓光电半导体有限公司 Method for preparing gallium nitride single crystal
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8379684B1 (en) * 2011-08-16 2013-02-19 Corning Incorporated Hole blocking layers in non-polar and semi-polar green light emitting devices
US9064980B2 (en) * 2011-08-25 2015-06-23 Palo Alto Research Center Incorporated Devices having removed aluminum nitride sections
US9252329B2 (en) * 2011-10-04 2016-02-02 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
JP2013128103A (en) * 2011-11-17 2013-06-27 Sanken Electric Co Ltd Nitride semiconductor device and nitride semiconductor device manufacturing method
JP6042545B2 (en) 2012-08-23 2016-12-14 国立大学法人東京農工大学 Highly transparent aluminum nitride single crystal layer and device comprising the same
CA2884169C (en) * 2012-09-11 2020-08-11 Tokuyama Corporation Aluminum nitride substrate and group-iii nitride laminate
EP2951869A1 (en) 2013-01-29 2015-12-09 Hexatech Inc. Optoelectronic devices incorporating single crystalline aluminum nitride substrate
CN103117209B (en) * 2013-02-01 2015-05-13 中山大学 Gradient AlGaN layer preparation method and device prepared by same
US20160005919A1 (en) * 2013-02-05 2016-01-07 Tokuyama Corporation Nitride semiconductor light emitting device
US9385198B2 (en) * 2013-03-12 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Heterostructures for semiconductor devices and methods of forming the same
EP2973719B1 (en) * 2013-03-14 2021-04-21 Hexatech Inc. Power semiconductor devices incorporating single crystalline aluminum nitride substrate
EP2973664B1 (en) * 2013-03-15 2020-10-14 Crystal Is, Inc. Ultraviolet light-emitting device and method of forming a contact to an ultraviolet light-emitting device
JP6318474B2 (en) * 2013-06-07 2018-05-09 住友電気工業株式会社 Manufacturing method of semiconductor device
US9412911B2 (en) 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
WO2015108089A1 (en) * 2014-01-16 2015-07-23 株式会社トクヤマ Ultraviolet light emitting diode and ultraviolet ray source
WO2015181656A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
KR102318317B1 (en) 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 Advanced electronic device structures using semiconductor structures and superlattices
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
JP6817072B2 (en) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ Optoelectronic device
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
EP3267497A4 (en) * 2015-03-06 2018-10-10 Stanley Electric Co., Ltd. Group iii nitride laminate and light emitting element comprising said laminate
CN108140695B (en) 2015-09-17 2021-02-09 晶体公司 Ultraviolet light emitting device comprising two-dimensional hole gas
WO2017145026A1 (en) 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
US10418517B2 (en) 2016-02-23 2019-09-17 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
JP7117243B2 (en) 2016-09-14 2022-08-12 スタンレー電気株式会社 Group III nitride laminate and semiconductor device having the laminate
JP6648685B2 (en) * 2016-12-26 2020-02-14 豊田合成株式会社 Method for manufacturing group III nitride semiconductor light emitting device
JP7094082B2 (en) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 Optical semiconductor devices, optical subassemblies, and optical modules
WO2018232080A1 (en) * 2017-06-16 2018-12-20 Crystal Is. Inc. Two-stage seeded growth of large aluminum nitride single crystals
WO2019094742A1 (en) 2017-11-10 2019-05-16 Crystal Is, Inc. Large, uv-transparent aluminum nitride single crystals and methods of forming them
US11031522B2 (en) 2017-12-15 2021-06-08 Stanley Electric Co., Ltd. Optical semiconductor element comprising n-type algan graded layer
WO2019246027A1 (en) 2018-06-19 2019-12-26 Crystal Is, Inc. Deep-uv-transparent aluminum nitride crystals and methods of forming them
US10622514B1 (en) 2018-10-15 2020-04-14 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
US20210047749A1 (en) 2019-08-15 2021-02-18 Robert T. Bondokov Diameter expansion of aluminum nitride crystals during growth by physical vapor transport
WO2024201307A1 (en) 2023-03-29 2024-10-03 Hexatech, Inc. Single crystalline aluminum nitride substrate and optoelectronic devices made therefrom

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050072986A1 (en) * 2001-09-03 2005-04-07 Nec Corporation Group-III nitride semiconductor device
EP1732145A2 (en) * 2005-06-10 2006-12-13 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing nitride-based semiconductor device
WO2008042020A2 (en) * 2006-05-09 2008-04-10 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods

Family Cites Families (195)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6615059A (en) 1966-10-25 1968-04-26
US3600701A (en) 1968-03-14 1971-08-17 Gen Electric Signal generator for producing a set of signals at baseband frequency and with adjustable phase slope
US3531245A (en) 1968-04-01 1970-09-29 Du Pont Magnesium-aluminum nitrides
US3607014A (en) 1968-12-09 1971-09-21 Dow Chemical Co Method for preparing aluminum nitride and metal fluoride single crystals
US3603414A (en) 1970-01-30 1971-09-07 Frank E Stebley Insert for drilling unit
US3768983A (en) 1971-11-03 1973-10-30 North American Rockwell Single crystal beryllium oxide growth from calcium oxide-beryllium oxide melts
US3903357A (en) 1971-12-06 1975-09-02 Westinghouse Electric Corp Adaptive gate video gray level measurement and tracker
FR2225207B1 (en) 1973-04-16 1978-04-21 Ibm
US3933573A (en) 1973-11-27 1976-01-20 The United States Of America As Represented By The Secretary Of The Air Force Aluminum nitride single crystal growth from a molten mixture with calcium nitride
US4008851A (en) 1976-01-16 1977-02-22 Curt G. Joa, Inc. Adhesive tape bag closure
DE2750607A1 (en) 1977-11-11 1979-05-17 Max Planck Gesellschaft AIR RESISTANT CRYSTALLINE LITHIUM NITRIDE, THE PROCESS FOR ITS MANUFACTURING AND ITS USE
FR2538953B1 (en) * 1982-12-30 1986-02-28 Thomson Csf EPITAXIAL STRUCTURE WITH EXALT PIEZOELECTRIC EFFECT AND ELECTRONIC SURFACE ACOUSTIC WAVE DEVICE COMPRISING SUCH A STRUCTURE
US4547471A (en) 1983-11-18 1985-10-15 General Electric Company High thermal conductivity aluminum nitride ceramic body
JPS61236686A (en) 1985-04-13 1986-10-21 Tohoku Metal Ind Ltd Process for growing single crystal
JP2745408B2 (en) 1988-07-07 1998-04-28 東芝セラミックス株式会社 Semiconductor single crystal pulling equipment
US5258218A (en) 1988-09-13 1993-11-02 Kabushiki Kaisha Toshiba Aluminum nitride substrate and method for producing same
JPH02263445A (en) 1988-12-23 1990-10-26 Toshiba Corp Aluminum nitride substrate and semiconductor using same
US5087949A (en) 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
JPH03285075A (en) 1990-03-30 1991-12-16 Nisshin Steel Co Ltd Production of tungsten crucible
JPH04355920A (en) 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd Semiconductor element forming substrate and manufacture thereof
US5292487A (en) 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
EP0544329A3 (en) 1991-11-28 1993-09-01 Kabushiki Kaisha Toshiba Semiconductor package
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JP2989975B2 (en) 1992-11-30 1999-12-13 京セラ株式会社 Method for manufacturing aluminum nitride substrate
JP2875726B2 (en) 1993-10-28 1999-03-31 新日本無線株式会社 Heat treatment method for compound semiconductor
US6083812A (en) 1993-02-02 2000-07-04 Texas Instruments Incorporated Heteroepitaxy by large surface steps
US5520785A (en) 1994-01-04 1996-05-28 Motorola, Inc. Method for enhancing aluminum nitride
US5571603A (en) 1994-02-25 1996-11-05 Sumitomo Electric Industries, Ltd. Aluminum nitride film substrate and process for producing same
US5525320A (en) 1994-07-11 1996-06-11 University Of Cincinnati Process for aluminum nitride powder production
JPH0859386A (en) 1994-08-22 1996-03-05 Mitsubishi Materials Corp Semiconductor single crystal growing device
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
DE69610673T2 (en) 1995-08-03 2001-05-10 Ngk Insulators, Ltd. Sintered aluminum nitride bodies and their manufacturing process
JP3604205B2 (en) * 1995-09-18 2004-12-22 日亜化学工業株式会社 Method for growing nitride semiconductor
US5981980A (en) 1996-04-22 1999-11-09 Sony Corporation Semiconductor laminating structure
JP3876473B2 (en) 1996-06-04 2007-01-31 住友電気工業株式会社 Nitride single crystal and manufacturing method thereof
JP3644191B2 (en) 1996-06-25 2005-04-27 住友電気工業株式会社 Semiconductor element
US5954874A (en) 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US5858086A (en) 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
JP3239787B2 (en) 1997-01-30 2001-12-17 安藤電気株式会社 IC socket
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
JP3776565B2 (en) 1997-06-12 2006-05-17 株式会社コトブキ Telescopic staircase seat
US6006620A (en) 1997-12-01 1999-12-28 Chrysler Corporation Automated manual transmission controller
WO1999034037A1 (en) 1997-12-25 1999-07-08 Japan Energy Corporation Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP4214585B2 (en) * 1998-04-24 2009-01-28 富士ゼロックス株式会社 Semiconductor device, semiconductor device manufacturing method and manufacturing apparatus
US6045612A (en) 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
KR100277968B1 (en) 1998-09-23 2001-03-02 구자홍 Gallium nitride substrate manufacturing method
US6086672A (en) 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
US6048813A (en) 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
US6063185A (en) 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6404125B1 (en) 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6218293B1 (en) 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
JP3015887B1 (en) 1998-11-19 2000-03-06 科学技術庁金属材料技術研究所長 Bulk single crystal growth method
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6187089B1 (en) 1999-02-05 2001-02-13 Memc Electronic Materials, Inc. Tungsten doped crucible and method for preparing same
US6592663B1 (en) 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US6829273B2 (en) 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
RU2158789C1 (en) 1999-08-04 2000-11-10 Водаков Юрий Александрович Technology of epitaxial growth of monocrystalline aluminum nitride and growth chamber for implementation of technology
JP4145437B2 (en) 1999-09-28 2008-09-03 住友電気工業株式会社 Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
US6350393B2 (en) 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry
JP2001192647A (en) 2000-01-14 2001-07-17 Seimi Chem Co Ltd Composition for polishing, containing cerium oxide, and polishing method
US6879615B2 (en) 2000-01-19 2005-04-12 Joseph Reid Henrichs FCSEL that frequency doubles its output emissions using sum-frequency generation
US6698647B1 (en) 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
US6447604B1 (en) 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6627974B2 (en) 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US6777717B1 (en) 2000-09-21 2004-08-17 Gelcore, Llc LED reflector for improved light extraction
AU2002246489A1 (en) * 2000-10-06 2002-07-30 Science And Technology Corporation @ Unm Quantum dot lasers
US7053413B2 (en) 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
JP2002222771A (en) 2000-11-21 2002-08-09 Ngk Insulators Ltd Method for manufacturing group iii nitride film, ground film for manufacturing group iii nitride film and method for manufacturing the same
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP2005167275A (en) * 2000-12-07 2005-06-23 Ngk Insulators Ltd Semiconductor device
JP2002274996A (en) * 2001-01-15 2002-09-25 Ngk Insulators Ltd Epitaxial ground substrate and epitaxial substrate
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US7501023B2 (en) 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6936357B2 (en) 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
TW567619B (en) 2001-08-09 2003-12-21 Matsushita Electric Ind Co Ltd LED lighting apparatus and card-type LED light source
EP1436844B1 (en) 2001-09-05 2016-03-23 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
JP2003086904A (en) * 2001-09-10 2003-03-20 Mitsubishi Cable Ind Ltd GaN SEMICONDUCTOR LASER
US7175281B1 (en) * 2003-05-13 2007-02-13 Lightmaster Systems, Inc. Method and apparatus to increase the contrast ratio of the image produced by a LCoS based light engine
US7105865B2 (en) 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
US7211146B2 (en) 2001-09-21 2007-05-01 Crystal Is, Inc. Powder metallurgy crucible for aluminum nitride crystal growth
TW573086B (en) 2001-09-21 2004-01-21 Crystal Is Inc Powder metallurgy tungsten crucible for aluminum nitride crystal growth
ATE418420T1 (en) * 2001-11-20 2009-01-15 Rensselaer Polytech Inst METHOD FOR POLISHING THE SURFACE OF A SUBSTRATE
US6515308B1 (en) 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US6770135B2 (en) 2001-12-24 2004-08-03 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP3782357B2 (en) 2002-01-18 2006-06-07 株式会社東芝 Manufacturing method of semiconductor light emitting device
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
US6841001B2 (en) * 2002-07-19 2005-01-11 Cree, Inc. Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
KR100891403B1 (en) 2002-08-01 2009-04-02 니치아 카가쿠 고교 가부시키가이샤 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
DE10248964B4 (en) 2002-10-14 2011-12-01 Crystal-N Gmbh Process for sublimation growth of aluminum nitride single crystals
DE10255849B4 (en) 2002-11-29 2006-06-14 Advanced Micro Devices, Inc., Sunnyvale Improved drain / source extension structure of a field effect transistor with high permittivity doped sidewall spacers and method of making the same
EP1576210B1 (en) 2002-12-11 2010-02-10 AMMONO Sp. z o.o. A substrate for epitaxy and a method of preparing the same
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP4373086B2 (en) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 Light emitting device
JP2004253788A (en) * 2003-01-30 2004-09-09 Toyoda Gosei Co Ltd Face emitting semiconductor laser
US7116691B2 (en) * 2003-01-30 2006-10-03 Toyoda Gosei Co., Ltd. Edge-emitting type semiconductor laser
JP4377600B2 (en) * 2003-03-24 2009-12-02 株式会社東芝 Laminated structure of group 3 nitride semiconductor, manufacturing method thereof, and group 3 nitride semiconductor device
FR2852974A1 (en) 2003-03-31 2004-10-01 Soitec Silicon On Insulator PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE CRYSTALS
US6831302B2 (en) 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7211831B2 (en) 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7521854B2 (en) 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7274043B2 (en) 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7306748B2 (en) 2003-04-25 2007-12-11 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining ceramics
US7192849B2 (en) 2003-05-07 2007-03-20 Sensor Electronic Technology, Inc. Methods of growing nitride-based film using varying pulses
JP4112449B2 (en) 2003-07-28 2008-07-02 株式会社東芝 Discharge electrode and discharge lamp
DE10335538A1 (en) 2003-07-31 2005-02-24 Sicrystal Ag Process and apparatus for AIN single crystal production with gas permeable crucible wall
JP4249184B2 (en) 2003-08-12 2009-04-02 日本電信電話株式会社 Nitride semiconductor growth substrate
EP1658642B1 (en) 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7288152B2 (en) 2003-08-29 2007-10-30 Matsushita Electric Industrial Co., Ltd. Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
US6995402B2 (en) 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
JP4396816B2 (en) 2003-10-17 2010-01-13 日立電線株式会社 Group III nitride semiconductor substrate and manufacturing method thereof
CN100397574C (en) * 2003-10-30 2008-06-25 台湾积体电路制造股份有限公司 Method for manufacturing multi-layer structure having strain and field effect transistor having strain layer
US7276779B2 (en) 2003-11-04 2007-10-02 Hitachi Cable, Ltd. III-V group nitride system semiconductor substrate
US7323256B2 (en) 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7087112B1 (en) 2003-12-02 2006-08-08 Crystal Is, Inc. Nitride ceramics to mount aluminum nitride seed for sublimation growth
US7518158B2 (en) 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
KR101156146B1 (en) 2003-12-09 2012-06-18 재팬 사이언스 앤드 테크놀로지 에이젼시 Highly efficient group-iii nitride based light emitting diodes via fabrication of structures on an n-face surface
JP2005210084A (en) * 2003-12-22 2005-08-04 Ngk Insulators Ltd Epitaxial substrate, semiconductor laminate structure, dislocation reduction method, and substrate for epitaxial formation
JP2005197573A (en) * 2004-01-09 2005-07-21 Sharp Corp Group iii nitride semiconductor light emitting element
US7056383B2 (en) 2004-02-13 2006-06-06 The Fox Group, Inc. Tantalum based crucible
US7569863B2 (en) 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
JP4805831B2 (en) 2004-03-18 2011-11-02 パナソニック株式会社 Semiconductor light emitting device, lighting module, lighting device, surface mount component, and display device
KR101088924B1 (en) 2004-05-19 2011-12-01 유스케 모리 Group iii-nitride semiconductor crystal and manufacturing method thereof, and group iii-nitride semiconductor device
US7994527B2 (en) 2005-11-04 2011-08-09 The Regents Of The University Of California High light extraction efficiency light emitting diode (LED)
US20050269577A1 (en) 2004-06-08 2005-12-08 Matsushita Electric Industrial Co., Ltd. Surface treatment method and surface treatment device
US7294199B2 (en) 2004-06-10 2007-11-13 Sumitomo Electric Industries, Ltd. Nitride single crystal and producing method thereof
US7339205B2 (en) 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7476910B2 (en) 2004-09-10 2009-01-13 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
TWI374553B (en) 2004-12-22 2012-10-11 Panasonic Corp Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
US7186580B2 (en) 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7125734B2 (en) 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
JP2006310721A (en) 2005-03-28 2006-11-09 Yokohama National Univ Self-light emitting device
JP4563230B2 (en) 2005-03-28 2010-10-13 昭和電工株式会社 Method for manufacturing AlGaN substrate
WO2006110512A1 (en) 2005-04-07 2006-10-19 North Carolina State University Seeded growth process for preparing aluminum nitride single crystals
WO2006116030A2 (en) 2005-04-21 2006-11-02 Aonex Technologies, Inc. Bonded intermediate substrate and method of making same
US7544963B2 (en) 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
JP5236148B2 (en) * 2005-05-12 2013-07-17 日本碍子株式会社 EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR ALIGNING DISLOCATION IN GROUP III NITRIDE CRYSTAL
KR20060127743A (en) 2005-06-06 2006-12-13 스미토모덴키고교가부시키가이샤 Nitride semiconductor substrate and method for manufacturing the same
US20060288929A1 (en) 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2006137711A1 (en) 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
TWI422044B (en) 2005-06-30 2014-01-01 Cree Inc Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US20070018182A1 (en) 2005-07-20 2007-01-25 Goldeneye, Inc. Light emitting diodes with improved light extraction and reflectivity
JP4778745B2 (en) 2005-07-27 2011-09-21 パナソニック株式会社 Semiconductor light emitting device and manufacturing method thereof
JP2007073761A (en) 2005-09-07 2007-03-22 Sumitomo Electric Ind Ltd Nitride semiconductor substrate and processing method thereof
JP2009517329A (en) 2005-11-28 2009-04-30 クリスタル・イズ，インコーポレイテッド Low defect large aluminum nitride crystal and method for producing the same
CN101331249B (en) 2005-12-02 2012-12-19 晶体公司 Doped aluminum nitride crystals and methods of making them
US7915619B2 (en) 2005-12-22 2011-03-29 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP4963839B2 (en) 2006-02-06 2012-06-27 昭和電工株式会社 Light emitting device
CA2643439C (en) 2006-03-10 2015-09-08 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
JP5479888B2 (en) 2006-03-30 2014-04-23 クリスタル アイエス インコーポレイテッド Method for controllably doping aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US7524376B2 (en) 2006-05-04 2009-04-28 Fairfield Crystal Technology, Llc Method and apparatus for aluminum nitride monocrystal boule growth
WO2008011377A2 (en) 2006-07-17 2008-01-24 3M Innovative Properties Company Led package with converging extractor
US7755103B2 (en) 2006-08-03 2010-07-13 Sumitomo Electric Industries, Ltd. Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
US7842960B2 (en) 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
US7714340B2 (en) 2006-09-06 2010-05-11 Palo Alto Research Center Incorporated Nitride light-emitting device
US7631986B2 (en) 2006-10-31 2009-12-15 Koninklijke Philips Electronics, N.V. Lighting device package
US20090121250A1 (en) 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
US9318327B2 (en) 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
US8110838B2 (en) 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
US7687823B2 (en) 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
WO2008081758A1 (en) 2006-12-28 2008-07-10 Tokuyama Corporation Process for producing metallized aluminum nitride substrate
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5730484B2 (en) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド Thick pseudo-lattice matched nitride epitaxial layer
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
JP5121268B2 (en) 2007-03-27 2013-01-16 日本碍子株式会社 Aluminum nitride sintered body and member for semiconductor manufacturing apparatus
US20080258165A1 (en) 2007-04-23 2008-10-23 Goldeneye, Inc. Light emitting diode chip
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
JP2009049395A (en) 2007-07-24 2009-03-05 Toyoda Gosei Co Ltd Group iii nitride-based compound semiconductor light emitting element
US8866185B2 (en) 2007-09-06 2014-10-21 SemiLEDs Optoelectronics Co., Ltd. White light LED with multiple encapsulation layers
TW200931690A (en) 2007-11-30 2009-07-16 Univ California Light output enhanced gallium nitride based thin light emitting diode
US20090140279A1 (en) 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
US7713769B2 (en) 2007-12-21 2010-05-11 Tekcore Co., Ltd. Method for fabricating light emitting diode structure having irregular serrations
US8049237B2 (en) 2007-12-28 2011-11-01 Nichia Corporation Light emitting device
US20090173958A1 (en) 2008-01-04 2009-07-09 Cree, Inc. Light emitting devices with high efficiency phospor structures
US7859000B2 (en) 2008-04-10 2010-12-28 Cree, Inc. LEDs using single crystalline phosphor and methods of fabricating same
KR101092079B1 (en) 2008-04-24 2011-12-12 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR20100003321A (en) 2008-06-24 2010-01-08 삼성전자주식회사 Light emitting element, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device
US20090321758A1 (en) 2008-06-25 2009-12-31 Wen-Huang Liu Led with improved external light extraction efficiency
JP5305758B2 (en) 2008-06-30 2013-10-02 株式会社東芝 Semiconductor light emitting device
US8384115B2 (en) 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
US20100314551A1 (en) 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050072986A1 (en) * 2001-09-03 2005-04-07 Nec Corporation Group-III nitride semiconductor device
EP1732145A2 (en) * 2005-06-10 2006-12-13 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing nitride-based semiconductor device
WO2008042020A2 (en) * 2006-05-09 2008-04-10 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHIH C F ET AL: "High-quality and crack-free AlxGa1-xN (x~0.2) grown on sapphire by a two-step growth method", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 277, no. 1-4, 15 April 2005 (2005-04-15), pages 44 - 50, XP004831610, ISSN: 0022-0248 *

Also Published As

Publication number Publication date
US20080187016A1 (en) 2008-08-07
CN101652832A (en) 2010-02-17
CN101652832B (en) 2011-06-22
US9437430B2 (en) 2016-09-06
JP2015167231A (en) 2015-09-24
JP5730484B2 (en) 2015-06-10
WO2008094464A2 (en) 2008-08-07
JP2010517298A (en) 2010-05-20

Similar Documents

Publication Publication Date Title
WO2008094464A3 (en) Thick pseudomorphic nitride epitaxial layers
EP2019437A4 (en) Iii nitride compound semiconductor laminated structure
WO2012057517A3 (en) Compound semiconductor device and method for manufacturing a compound semiconductor
EP2410580A4 (en) Group iii nitride semiconductor device, epitaxial substrate, and method for manufacturing group iii nitride semiconductor device
WO2011075228A3 (en) Isolation for nanowire devices
WO2010151855A3 (en) Iii-v semiconductor structures including aluminum-silicon nitride passivation
EP2080823A4 (en) Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element
TWI319893B (en) Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate
EP2264743A4 (en) Group iii nitride semiconductor element and epitaxial wafer
EP2090680A4 (en) Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
EP2498282A4 (en) Epitaxially laminated iii-nitride substrate
WO2010099534A3 (en) Deuterated compounds for electronic applications
TWI368956B (en) Multichip stack structure and method for fabricating the same
GB0722016D0 (en) A semiconductor layer structure
WO2010135395A3 (en) Deuterated compounds for electronic applications
EP2226853A4 (en) Nitride semiconductor element and method for manufacturing the same
TWI369793B (en) Gallium nitride-based compound semiconductor light-emitting element
EP2333827B8 (en) Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
EP2179442A4 (en) Semiconductor die having a redistribution layer
EP2484818A4 (en) Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device
EP2477236A4 (en) Nitride semiconductor multilayer structure, method for producing same, and nitride semiconductor light-emitting element
EP2378574A4 (en) Nitride semiconductor light-emitting element, and method for manufacturing same
EP2485282A4 (en) Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device
EP2109162A4 (en) Organic semiconductor composite, organic transistor material and organic field effect transistor
EP2624318A4 (en) Iii nitride semiconductor light-emitting element, and process for manufacturing same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880003002.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08724819

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2009547307

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08724819

Country of ref document: EP

Kind code of ref document: A2