WO2008093871A1 - Aluminum nitride sinter and process for producing the same - Google Patents

Aluminum nitride sinter and process for producing the same Download PDF

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Publication number
WO2008093871A1
WO2008093871A1 PCT/JP2008/051780 JP2008051780W WO2008093871A1 WO 2008093871 A1 WO2008093871 A1 WO 2008093871A1 JP 2008051780 W JP2008051780 W JP 2008051780W WO 2008093871 A1 WO2008093871 A1 WO 2008093871A1
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WO
WIPO (PCT)
Prior art keywords
aluminum nitride
nitride sinter
producing
same
sinter
Prior art date
Application number
PCT/JP2008/051780
Other languages
French (fr)
Japanese (ja)
Inventor
Yukihiro Kanechika
Masanobu Azuma
Original Assignee
Tokuyama Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corporation filed Critical Tokuyama Corporation
Priority to JP2008556214A priority Critical patent/JP5419467B2/en
Priority to KR1020097015954A priority patent/KR101147029B1/en
Priority to EP08710758A priority patent/EP2110366A4/en
Priority to US12/525,224 priority patent/US8148283B2/en
Publication of WO2008093871A1 publication Critical patent/WO2008093871A1/en

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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/6261—Milling
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
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    • C04B35/6264—Mixing media, e.g. organic solvents
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C04B2235/3222—Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • Chemical & Material Sciences (AREA)
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  • Materials Engineering (AREA)
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  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

[PROBLEMS] To provide a high-purity aluminum nitride sinter by a process for aluminum nitride sinter production in which oxides contained in a raw powder are efficiently removed and any oxide contained in the raw powder is prevented from reacting with a sintering aid to yield a composite oxide remaining in the aluminum nitride sinter. [MEANS FOR SOLVING PROBLEMS] The aluminum nitride sinter has a concentration of residual oxygen excluding adherent oxygen of 350 ppm or lower.
PCT/JP2008/051780 2007-02-02 2008-02-04 Aluminum nitride sinter and process for producing the same WO2008093871A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008556214A JP5419467B2 (en) 2007-02-02 2008-02-04 Aluminum nitride sintered body and method for producing the same
KR1020097015954A KR101147029B1 (en) 2007-02-02 2008-02-04 Aluminum nitride sinter and process for producing the same
EP08710758A EP2110366A4 (en) 2007-02-02 2008-02-04 Aluminum nitride sinter and process for producing the same
US12/525,224 US8148283B2 (en) 2007-02-02 2008-02-04 Aluminum nitride sintered body

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007024622 2007-02-02
JP2007-024622 2007-02-02

Publications (1)

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WO2008093871A1 true WO2008093871A1 (en) 2008-08-07

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PCT/JP2008/051780 WO2008093871A1 (en) 2007-02-02 2008-02-04 Aluminum nitride sinter and process for producing the same

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US (1) US8148283B2 (en)
EP (1) EP2110366A4 (en)
JP (1) JP5419467B2 (en)
KR (1) KR101147029B1 (en)
CN (1) CN101600671A (en)
WO (1) WO2008093871A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010076995A (en) * 2008-09-29 2010-04-08 Denki Kagaku Kogyo Kk Susceptor member for apparatus for manufacturing group iii-v compound semiconductor
JP2010222201A (en) * 2009-03-25 2010-10-07 Tokuyama Corp Method for producing aluminum nitride sintered body
JP2010241679A (en) * 2009-04-03 2010-10-28 Sicrystal Ag Method for producing low-oxygen aluminum nitride massive single crystal, and low-oxygen single crystal aluminum nitride substrate
JP2011121812A (en) * 2009-12-10 2011-06-23 Tokuyama Corp Aluminum nitride powder
WO2020184319A1 (en) * 2019-03-12 2020-09-17 三井金属鉱業株式会社 Sputtering target material and method for producing same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012056807A1 (en) * 2010-10-25 2012-05-03 日本碍子株式会社 Ceramic material, laminated body, member for semiconductor manufacturing device, and sputtering target member
TWI450855B (en) * 2011-08-04 2014-09-01 Method for making a pure aluminum nitride substrate
KR102431063B1 (en) * 2017-05-22 2022-08-09 도요 알루미늄 가부시키가이샤 Aluminum nitride-based powder and its manufacturing method
JP6932995B2 (en) * 2017-05-23 2021-09-08 Tdk株式会社 Nitride single crystal
JP6725115B2 (en) 2017-12-25 2020-07-15 昭和電工株式会社 Alumina sintered body, abrasive grains, and grindstone
KR20200081969A (en) 2018-12-28 2020-07-08 한국세라믹기술원 Composition for Sintering Aluminum Nitride and Aluminum Nitride Sintered Body
KR102205085B1 (en) 2018-12-31 2021-01-19 한국세라믹기술원 Composition for High Strength Aluminum Nitride Sintering and High Strength Aluminum Nitride Sintered Body
KR102299212B1 (en) 2019-10-22 2021-09-09 한국세라믹기술원 High Strength Aluminum Nitride Sintered Body
WO2021210396A1 (en) * 2020-04-14 2021-10-21 学校法人関西学院 Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method

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JPS6325278A (en) 1986-07-18 1988-02-02 株式会社トクヤマ Manufacture of aluminum nitride sintered body
JP2829247B2 (en) 1994-09-05 1998-11-25 株式会社東芝 Method for producing high thermal conductive aluminum nitride sintered body
JP2856734B2 (en) 1987-01-13 1999-02-10 株式会社東芝 High thermal conductive aluminum nitride sintered body
JP2005119953A (en) * 2003-09-25 2005-05-12 Tokuyama Corp Aluminum nitride sintered compact and method of producing the same
WO2006013899A1 (en) * 2004-08-03 2006-02-09 Tokuyama Corporation Package for storing light emitting element and method for producing package for storing light emitting element

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US5242872A (en) * 1986-07-18 1993-09-07 Tokuyama Soda Kabushiki Kaisha Process for producing aluminum nitride sintered body
US4847221A (en) * 1987-01-13 1989-07-11 Kabushiki Kaisha Toshiba AlN sintered body having high thermal conductivity and a method of fabricating the same
JP3461644B2 (en) * 1995-12-06 2003-10-27 電気化学工業株式会社 Aluminum nitride sintered body, its manufacturing method and circuit board
EP1518843A3 (en) 2003-09-25 2007-05-23 Tokuyama Corporation Aluminum nitride sintered body and method of producing the same
JP2005166454A (en) * 2003-12-03 2005-06-23 Tokuyama Corp Cover for light source
JP4831953B2 (en) * 2004-10-20 2011-12-07 住友電気工業株式会社 Aluminum nitride sintered body
JP4773744B2 (en) * 2005-03-30 2011-09-14 株式会社トクヤマ Method for producing aluminum nitride sintered body
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Publication number Priority date Publication date Assignee Title
JPS6325278A (en) 1986-07-18 1988-02-02 株式会社トクヤマ Manufacture of aluminum nitride sintered body
JP2856734B2 (en) 1987-01-13 1999-02-10 株式会社東芝 High thermal conductive aluminum nitride sintered body
JP2829247B2 (en) 1994-09-05 1998-11-25 株式会社東芝 Method for producing high thermal conductive aluminum nitride sintered body
JP2005119953A (en) * 2003-09-25 2005-05-12 Tokuyama Corp Aluminum nitride sintered compact and method of producing the same
WO2006013899A1 (en) * 2004-08-03 2006-02-09 Tokuyama Corporation Package for storing light emitting element and method for producing package for storing light emitting element

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Title
G. A. SLACK; T. F. MCNELLY: "AlN single crystals", J. CRYST. GROWTH, vol. 34, 1976, pages 263
M. MIYANAGA ET AL.: "AlN Single Crystal Growth by Sublimation Method", SEI TECHNICAL REVIEW, no. 168, March 2006 (2006-03-01), pages 103

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010076995A (en) * 2008-09-29 2010-04-08 Denki Kagaku Kogyo Kk Susceptor member for apparatus for manufacturing group iii-v compound semiconductor
JP2010222201A (en) * 2009-03-25 2010-10-07 Tokuyama Corp Method for producing aluminum nitride sintered body
JP2010241679A (en) * 2009-04-03 2010-10-28 Sicrystal Ag Method for producing low-oxygen aluminum nitride massive single crystal, and low-oxygen single crystal aluminum nitride substrate
JP2011121812A (en) * 2009-12-10 2011-06-23 Tokuyama Corp Aluminum nitride powder
WO2020184319A1 (en) * 2019-03-12 2020-09-17 三井金属鉱業株式会社 Sputtering target material and method for producing same
JPWO2020184319A1 (en) * 2019-03-12 2021-10-14 三井金属鉱業株式会社 Sputtering target material and its manufacturing method
JP7077474B2 (en) 2019-03-12 2022-05-30 三井金属鉱業株式会社 Sputtering target material and its manufacturing method

Also Published As

Publication number Publication date
JP5419467B2 (en) 2014-02-19
US8148283B2 (en) 2012-04-03
JPWO2008093871A1 (en) 2010-05-20
KR101147029B1 (en) 2012-05-17
US20100093514A1 (en) 2010-04-15
CN101600671A (en) 2009-12-09
EP2110366A1 (en) 2009-10-21
KR20090115931A (en) 2009-11-10
EP2110366A4 (en) 2012-05-30

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