WO2008090828A1 - 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス - Google Patents

有機薄膜トランジスタ、その製造方法及び有機半導体デバイス Download PDF

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Publication number
WO2008090828A1
WO2008090828A1 PCT/JP2008/050649 JP2008050649W WO2008090828A1 WO 2008090828 A1 WO2008090828 A1 WO 2008090828A1 JP 2008050649 W JP2008050649 W JP 2008050649W WO 2008090828 A1 WO2008090828 A1 WO 2008090828A1
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic
organic thin
manufacturing
Prior art date
Application number
PCT/JP2008/050649
Other languages
English (en)
French (fr)
Inventor
Reiko Sugisaki
Katsura Hirai
Hiroshi Kita
Yasushi Okubo
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2008555040A priority Critical patent/JPWO2008090828A1/ja
Publication of WO2008090828A1 publication Critical patent/WO2008090828A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

　簡便なウェットプロセスでゲート絶縁膜を形成することができ、トランジスタ特性に優れ、密着性が良好で、耐久性に優れた有機薄膜トランジスタの製造方法であって、少なくとも有機半導体膜及びゲート絶縁膜を有する有機薄膜トランジスタの製造方法において、該ゲート絶縁膜の形成の一部又は全部がゾル－ゲル法を用いて形成され、かつゲート絶縁膜形成材料にシランカップリング剤を含むことを特徴とする。
PCT/JP2008/050649 2007-01-22 2008-01-19 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス WO2008090828A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008555040A JPWO2008090828A1 (ja) 2007-01-22 2008-01-19 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-011183 2007-01-22
JP2007011183 2007-01-22

Publications (1)

Publication Number Publication Date
WO2008090828A1 true WO2008090828A1 (ja) 2008-07-31

Family

ID=39644405

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050649 WO2008090828A1 (ja) 2007-01-22 2008-01-19 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス

Country Status (2)

Country Link
JP (1) JPWO2008090828A1 (ja)
WO (1) WO2008090828A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121279A1 (ja) * 2011-03-07 2012-09-13 国立大学法人東京大学 有機半導体層の製造方法、有機トランジスタの製造方法、有機トランジスタ、及び表示装置
US10529937B2 (en) 2016-06-27 2020-01-07 Foundation Of Soongsil University-Industry Cooperation Method of manufacturing organic semiconductor device
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024467A (ja) * 1999-07-07 2001-01-26 Toyo Commun Equip Co Ltd 高周波圧電デバイスの構造および製造方法
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024467A (ja) * 1999-07-07 2001-01-26 Toyo Commun Equip Co Ltd 高周波圧電デバイスの構造および製造方法
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PAYNE M.M.: "Organic Field-Effect Transistors from Solution-Deposited Functionalized Acenes with Mobilities as High as 1 cm2/V.s", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 127, no. 14, 19 March 2005 (2005-03-19), pages 4986 - 4987, XP008066061, DOI: doi:10.1021/ja042353u *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121279A1 (ja) * 2011-03-07 2012-09-13 国立大学法人東京大学 有機半導体層の製造方法、有機トランジスタの製造方法、有機トランジスタ、及び表示装置
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same
US10529937B2 (en) 2016-06-27 2020-01-07 Foundation Of Soongsil University-Industry Cooperation Method of manufacturing organic semiconductor device

Also Published As

Publication number Publication date
JPWO2008090828A1 (ja) 2010-05-20

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